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31. 发明授权

US06538919B1 Magnetic tunnel junctions using ferrimagnetic materials 有权
标题翻译：使用铁磁材料的磁隧道结
公开(公告)号：US06538919B1
公开(公告)日：2003-03-25
申请号：US09708207
申请日：2000-11-08
申请人： David W. Abraham , Stuart S. P. Parkin , John C. Slonczewski , Philip L. Trouilloud
发明人： David W. Abraham , Stuart S. P. Parkin , John C. Slonczewski , Philip L. Trouilloud
IPC分类号： G11C1114
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/098 , H01F10/3281 , H01F10/3286
摘要： The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two magnetic layers is ferrimagnetic. Such MTJ's are used in MRAM (magnetic random access memory) structures. Where the magnetic device is a magnetic sensor, it preferably includes a layer that comprises a ferrimagnetic material separated from another magnetic layer by a barrier layer and the magnetizations of the magnetic layer are oriented at an angle to one another.
摘要翻译：提出使用铁磁材料用于磁性器件。这种磁性装置包括具有由绝缘阻挡层隔开的至少两个磁性层的磁隧道结（MTJ），其中两个磁性层中的至少一个是亚铁磁性的。这种MTJ用于MRAM（磁随机存取存储器）结构。在磁性装置是磁性传感器的情况下，其优选地包括包含由阻挡层与另一个磁性层分离的铁磁材料的层，并且磁性层的磁化被定向成彼此成角度。

32. 发明授权

US06385082B1 Thermally-assisted magnetic random access memory (MRAM) 有权
标题翻译：热辅助磁随机存取存储器（MRAM）
公开(公告)号：US06385082B1
公开(公告)日：2002-05-07
申请号：US09708253
申请日：2000-11-08
申请人： David W. Abraham , Philip L. Trouilloud
发明人： David W. Abraham , Philip L. Trouilloud
IPC分类号： G11C1114
CPC分类号： G11C11/16 , G11C11/15 , G11C11/1675
摘要： It is important to ensure good selectivity of a single magnetic tunnel junction storage cell within a memory array without affecting nearby storage cells. For this purpose, this memory array of storage cells preferably comprises a) an array of electrically conducting bit lines and electrically conducting word lines which form intersections therebetween, b) a storage cell disposed at each of said intersections, each storage cell comprising at least one reversible magnetic region or layer characterized by a magnetization state which can be reversed by applying thereto a selected external magnetic field, said reversible magnetic layer comprising a material whose magnetization state is more easily reversed upon a change in the temperature thereof, and c) a temperature change generator for changing the temperature of said reversible magnetic layer of only a selected one of said array of storage cells at any moment. To select a cell, it is preferable to select a cell by using a brief pulse of tunnelling current between the intersecting bit and word lines at that cell in order to provide sufficient Joule heating to facilitate a change in the magnetization state of its reversible magnetic layer, which preferably comprises a ferrimagnetic material.
摘要翻译：重要的是确保单个磁性隧道结储存单元在存储器阵列内的良好选择性，而不影响附近的存储单元。为此，存储单元的该存储器阵列优选地包括：a）导电位线阵列和导电字线，其在它们之间形成相交; b）设置在每个所述相交处的存储单元，每个存储单元包括至少一个可逆磁性区域或层，其特征在于通过向其施加选定的外部磁场可以反转的磁化状态，所述可逆磁性层包括其磁化状态在其温度变化时更容易反转的材料，以及c）温度改变发生器，用于随时改变仅存储单元阵列中选定的一个所述可逆磁性层的温度。为了选择单元，优选通过使用在该单元处的相交位和字线之间的隧道电流的简短脉冲来选择单元，以便提供足够的焦耳加热以促进其可逆磁性层的磁化状态的变化，其优选包含亚铁磁材料。

33. 发明授权

US5543918A Through-the-lens confocal height measurement 失效
标题翻译：透镜共聚焦高度测量
公开(公告)号：US5543918A
公开(公告)日：1996-08-06
申请号：US369828
申请日：1995-01-06
申请人： David W. Abraham , Danny C. Y. Wong
发明人： David W. Abraham , Danny C. Y. Wong
IPC分类号： G01B11/02 , G01B11/24
CPC分类号： G01B11/026
摘要： Apparatus and method for measuring a change in the height of a surface or the distance between two surfaces. The invention involves converging a light beam having a beam axis and a focus onto the said surface; scanning the focus of the light beam across the surface along the beam axis using a scanning means; measuring intensity of light reflected from the surface during the scanning; determining a maximum of the light intensity; assigning to the maximum of the light intensity a position of the scanning means; repeating these steps to monitor a change in the position of the scanning means assigned to the maximum of the light intensity; and correlating such change in the position of the scanning means to a change in the height of the surface.
摘要翻译：用于测量表面高度变化或两个表面之间距离的装置和方法。本发明涉及将具有光束轴和焦点的光束会聚在所述表面上; 使用扫描装置沿光束轴扫描光束的焦点横过该表面; 测量在扫描期间从表面反射的光的强度; 确定光强度的最大值; 将扫描装置的位置的光强度的最大值分配; 重复这些步骤来监视分配给最大光强度的扫描装置的位置的变化; 并且将扫描装置的位置的这种变化与表面的高度的变化相关联。

34. 发明授权

US08105850B1 Process for selectively patterning a magnetic film structure 有权
标题翻译：用于选择性地构图磁膜结构的工艺
公开(公告)号：US08105850B1
公开(公告)日：2012-01-31
申请号：US12917800
申请日：2010-11-02
申请人： David W. Abraham , Assefa Solomon , Eugene J. O'Sullivan
发明人： David W. Abraham , Assefa Solomon , Eugene J. O'Sullivan
IPC分类号： H01L21/00 , H01L21/20 , H01L21/461 , H01L21/302
CPC分类号： H01L43/12
摘要： Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.
摘要翻译：用于选择性地图案化磁性膜结构的方法通常包括通过湿法选择性地蚀刻设置在隧道势垒层上的自由层的暴露部分，其包括将自由层暴露于包含至少一种酸和有机磷酸抑制剂或盐的蚀刻剂溶液在隧道势垒层上停止。

35. 发明申请

US20090207653A1 MEMORY STORAGE DEVICE WITH HEATING ELEMENT 审中-公开
标题翻译：具有加热元件的存储器件
公开(公告)号：US20090207653A1
公开(公告)日：2009-08-20
申请号：US12328401
申请日：2008-12-04
申请人： David W. Abraham , Philip L. Trouilloud
发明人： David W. Abraham , Philip L. Trouilloud
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
摘要： A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
摘要翻译：提供一种包括具有可变磁区的存储单元的存储器存储装置。可变磁性区域包括具有响应于温度变化的磁化状态的材料。存储器存储装置还包括加热元件。加热元件靠近存储单元，用于选择性地改变存储单元的可变磁区的温度。通过加热元件加热存储单元，与通过直接施加电流来加热存储单元不同，在存储单元的制造中提供了更多的灵活性。

36. 发明申请

US20090202952A1 SUBLITHOGRAPHIC PATTERNING METHOD INCORPORATING A SELF-ALIGNED SINGLE MASK PROCESS 有权
标题翻译：自动对准单掩模过程的分层方案
公开(公告)号：US20090202952A1
公开(公告)日：2009-08-13
申请号：US12028861
申请日：2008-02-11
申请人： David W. Abraham , Steven E. Steen , Nicholas C.M. Fuller , Francois Pagette
发明人： David W. Abraham , Steven E. Steen , Nicholas C.M. Fuller , Francois Pagette
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , H01L21/32139
摘要： A method of implementing sub-lithographic patterning of a semiconductor device includes forming a first set of patterned features with a single lithography step, the initial set of patterned features characterized by a linewidth and spacing therebetween; forming a first set of sidewall spacers on the first set of patterned features, and thereafter removing the first set of patterned features so as to define a second set of patterned features based on the geometry of the first set of sidewall spacers; and performing one or more additional iterations of forming subsequent sets of sidewall spacers on subsequent sets of patterned features, followed by removal of the subsequent sets of patterned features, wherein a given set of patterned features is based on the geometry of an associated set of sidewall spacers formed prior thereto, and wherein a final of the subsequent sets of patterned features is characterized by a sub-lithographic dimension.
摘要翻译：实现半导体器件的次光刻图案化的方法包括用单个光刻步骤形成第一组图案化特征，初始的图案化特征集合以其间的线宽和间距为特征; 在所述第一组图案化特征上形成第一组侧壁间隔物，然后移除所述第一组图案特征，以便基于所述第一组侧壁间隔物的几何形状限定第二组图案特征; 以及执行在随后的图案化特征集合上形成随后的一组侧壁间隔物的一个或多个附加迭代，随后移除随后的一组图案化特征，其中给定的一组图案化特征基于相关联的一组侧壁的几何形状间隔物在其之前形成，并且其中后续的一组图案化特征的最后的特征在于亚光刻尺寸。

37. 发明申请

US20080225586A1 Low Magnetization Materials for High Performance Magnetic Memory Devices 失效
标题翻译：用于高性能磁存储器件的低磁化材料
公开(公告)号：US20080225586A1
公开(公告)日：2008-09-18
申请号：US12129892
申请日：2008-05-30
申请人： David W. Abraham
发明人： David W. Abraham
IPC分类号： G11C11/15
CPC分类号： H01L43/10 , Y10T428/1107
摘要： Techniques for attaining high performance magnetic memory devices are provided. In one aspect, a magnetic memory device comprising one or more free magnetic layers is provided. The one or more free magnetic layers comprise a low magnetization material adapted to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter. The device may be configured such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20. The magnetic memory device may comprise a magnetic random access memory (MRAM) device. A method of producing a magnetic memory device is also provided.
摘要翻译：提供了用于实现高性能磁存储器件的技术。在一个方面，提供了包括一个或多个自由磁性层的磁存储器件。一个或多个自由磁性层包括适于具有小于或等于约600个电磁单位/立方厘米的饱和磁化强度的低磁化材料。该装置可以被配置为使得与非相互作用的磁存储器件的阵列相关联的平均切换场的比率和开关场的标准偏差大于或等于约20.磁存储器件可以包括磁性随机访问存储器（MRAM）设备。还提供了一种制造磁存储器件的方法。

38. 发明申请

US20080220374A1 METHOD AND STRUCTURE FOR IMPROVED ALIGNMENT IN MRAM INTEGRATION 审中-公开
公开(公告)号：US20080220374A1
公开(公告)日：2008-09-11
申请号：US12125099
申请日：2008-05-22
申请人： Sivananda K. Kanakasabapathy , David W. Abraham
发明人： Sivananda K. Kanakasabapathy , David W. Abraham
IPC分类号： G03F7/26
CPC分类号： H01L23/544 , H01L27/222 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for implementing alignment of a semiconductor device structure includes forming first and second sets of alignment marks within a lower level of the structure, the second set of alignment marks adjacent the first set of alignment marks. An opaque layer is formed over the lower level, including the first and second sets of alignment marks. A portion of the opaque layer corresponding to the location of said first set of alignment marks is opened so as to render the first set optically visible while the second set of alignment marks initially remains covered by the opaque layer. The opaque layer is patterned using the optically visible first set of alignment marks, wherein the second set of alignment marks remain available for subsequent alignment operations in the event the first set becomes damaged during patterning of the opaque layer.

39. 发明申请

US20080160644A1 METHOD AND STRUCTURE FOR IMPROVED ALIGNMENT IN MRAM INTEGRATION 审中-公开
公开(公告)号：US20080160644A1
公开(公告)日：2008-07-03
申请号：US12050281
申请日：2008-03-18
申请人： Sivananda K. Kanakasabapathy , David W. Abraham
发明人： Sivananda K. Kanakasabapathy , David W. Abraham
IPC分类号： H01L21/66
CPC分类号： H01L23/544 , H01L27/222 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for implementing alignment of a semiconductor device structure includes forming first and second sets of alignment marks within a lower level of the structure, the second set of alignment marks adjacent the first set of alignment marks. An opaque layer is formed over the lower level, including the first and second sets of alignment marks. A portion of the opaque layer corresponding to the location of said first set of alignment marks is opened so as to render the first set optically visible while the second set of alignment marks initially remains covered by the opaque layer. The opaque layer is patterned using the optically visible first set of alignment marks, wherein the second set of alignment marks remain available for subsequent alignment operations in the event the first set becomes damaged during patterning of the opaque layer.

40. 发明授权

US07102916B2 Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption 失效
标题翻译：用于选择MRAM器件的各向异性轴角度以降低功耗的方法和结构
公开(公告)号：US07102916B2
公开(公告)日：2006-09-05
申请号：US10710281
申请日：2004-06-30
申请人： Philip L. Trouilloud , David W. Abraham , John K. DeBrosse , Daniel Worledge
发明人： Philip L. Trouilloud , David W. Abraham , John K. DeBrosse , Daniel Worledge
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method for determining a desired anisotropy axis angle for a magnetic random access memory (MRAM) device includes selecting a plurality of initial values for the anisotropy axis angle and determining, for each selected initial value, a minimum thickness for at least one ferromagnetic layer of the MRAM device. The minimum thickness corresponds to a predefined activation energy of an individual cell within the MRAM device. For each selected value, a minimum applied magnetic field value in a wordline direction and a bitline direction of the MRAM device is also determined so as maintain the predefined activation energy. For each selected value, an applied power per bit value is calculated, wherein the desired anisotropy axis angle is the selected anisotropy axis angle corresponding to a minimum power per bit value.
摘要翻译：一种用于确定磁性随机存取存储器（MRAM）装置的期望的各向异性轴角的方法包括：为各向异性轴角选择多个初始值，并为每个所选择的初始值确定至少一个铁磁层的最小厚度 MRAM设备。最小厚度对应于MRAM设备内单个单元的预定激活能。对于每个选择的值，还确定MRAM装置的字线方向和位线方向上的最小施加磁场值，以便维持预定的激活能量。对于每个选择的值，计算每位值的施加功率，其中期望的各向异性轴角是对应于每位值的最小功率的所选各向异性轴角。

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