专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20090298252A1 FIELD-ENHANCED PROGRAMMABLE RESISTANCE MEMORY CELL 有权
标题翻译：现场增强的可编程电阻存储单元
公开(公告)号：US20090298252A1
公开(公告)日：2009-12-03
申请号：US12538146
申请日：2009-08-09
申请人： Gerhard Ingmar Meijer , Chung Hon Lam , Hon-Sum Phillip Wong
发明人： Gerhard Ingmar Meijer , Chung Hon Lam , Hon-Sum Phillip Wong
IPC分类号： H01L21/02
CPC分类号： H01L45/04 , H01L27/20 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/147 , H01L45/16
摘要： A method for fabricating a field-enhanced programmable resistance memory cell. In an example embodiment, a resistor includes a resistance structure between a first electrode and a second electrode. The resistance structure includes an insulating dielectric material. The second electrode includes a protrusion extending into the resistance structure. The insulating dielectric material includes a material in which a confined conductive region with a programmable resistance is formable via a conditioning signal.
摘要翻译：一种用于制造场增强型可编程电阻存储单元的方法。在示例性实施例中，电阻器包括在第一电极和第二电极之间的电阻结构。电阻结构包括绝缘介电材料。第二电极包括延伸到电阻结构中的突起。绝缘电介质材料包括其中通过调节信号可形成具有可编程电阻的受限导电区域的材料。

32. 发明申请

US20090275168A1 PHASE CHANGE MATERIAL WITH FILAMENT ELECTRODE 有权
标题翻译：具有电极的相变材料
公开(公告)号：US20090275168A1
公开(公告)日：2009-11-05
申请号：US12500659
申请日：2009-07-10
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
IPC分类号： H01L21/06 , H01L21/16
CPC分类号： H01L45/141 , G11C13/0004 , G11C13/0007 , G11C2213/52 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145
摘要： The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
摘要翻译：本发明在一个实施例中提供了一种包括相变存储单元的存储器件; 第一电极; 以及位于所述相变存储器单元和所述第一电极之间的丝状电阻材料层，其中在所述丝状电阻器材料层的至少一部分中存在至少一个双稳态导电丝状通道，其提供所述相变存储器电池和第一电极。

33. 发明申请

US20080164455A1 Programmable Non-Volatile Resistance Switching Device 审中-公开
标题翻译：可编程非易失性电阻开关器件
公开(公告)号：US20080164455A1
公开(公告)日：2008-07-10
申请号：US12046525
申请日：2008-03-12
申请人： Santos F. Alvarado , Johannes Georg Bednorz , Gerhard Ingmar Meijer
发明人： Santos F. Alvarado , Johannes Georg Bednorz , Gerhard Ingmar Meijer
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C13/0004 , G11C19/00 , G11C2213/31 , H01L27/24
摘要： A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.
摘要翻译：存储元件包括在两个所述电极的子组之间的第一数量的电极和第二数量的导电通道，所述通道呈现在不同状态之间可逆地切换的电阻，其中第一数量大于2，第二个数字大于第一个数字除以2。导电通道可以设置在过渡金属氧化物材料中，其呈现出由电极和过渡金属氧化物材料之间的界面处的切换现象引起的可逆切换电阻。

34. 发明授权

US07376006B2 Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element 失效
标题翻译：具有双极可编程存储元件的非易失性存储器件中的增强的编程性能
公开(公告)号：US07376006B2
公开(公告)日：2008-05-20
申请号：US11216518
申请日：2005-08-31
申请人： Johannes Georg Bednorz , John Kenneth DeBrosse , Chung Hon Lam , Gerhard Ingmar Meijer , Jonathan Zanhong Sun
发明人： Johannes Georg Bednorz , John Kenneth DeBrosse , Chung Hon Lam , Gerhard Ingmar Meijer , Jonathan Zanhong Sun
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C11/16 , G11C11/5685 , G11C13/0007 , G11C2213/31 , G11C2213/79
摘要： A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
摘要翻译：非易失性存储单元包括可操作地存储存储单元的逻辑状态的双极可编程存储元件和包括第一和第二源极/漏极和栅极的金属氧化物半导体器件。双极可编程存储元件的第一端子适于连接到第一位线。第一源极/漏极连接到双极可编程存储元件的第二端子，第二源极/漏极适于连接到第二位线，并且栅极适于连接到字线。

35. 发明申请

US20110120856A1 Memory Cell and Select Element 有权
标题翻译：内存单元格和选择元素
公开(公告)号：US20110120856A1
公开(公告)日：2011-05-26
申请号：US12949047
申请日：2010-11-18
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： C25B15/02
CPC分类号： G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1683 , H01L45/1691
摘要： In accordance with an aspect of the present disclosure, a memory cell (1) or select element is provided. The element includes an ion conductor element (3) formed of a ion conductor material with mobile metal ions, a first electrically conducing electrode (4) in electrical contact with the ion conductor element, and a second electrically conducting electrode (6) in electrical contact with the ion conductor element, so that the memory cell or select element is programmable by applying an electrical voltage between the first electrode and the second electrode that causes the metal ions to be influenced so that an electrical resistance across the ion conductor element is caused to vary, for example because a metallic protrusion (7) is caused to grow or decompose. In contrast to prior art approaches, the ion conductor element has a shape that is asymmetrical with respect to an exchange of the first electrode (4) and the second electrode (6) for each other.
摘要翻译：根据本公开的一个方面，提供了存储单元（1）或选择元件。元件包括由离子导体材料与移动金属离子形成的离子导体元件（3），与离子导体元件电接触的第一导电电极（4）和电接触的第二导电电极（6）通过在第一电极和第二电极之间施加电压来使存储单元或选择元件可编程，从而使金属离子受到影响，从而使离子导体元件的电阻达到变化，例如因为使金属突起（7）生长或分解。与现有技术的方法相比，离子导体元件具有相对于第一电极（4）和第二电极（6）彼此交换的不对称的形状。

36. 发明授权

US07933483B2 Electro-optical memory cell 有权
标题翻译：电光存储单元
公开(公告)号：US07933483B2
公开(公告)日：2011-04-26
申请号：US12785007
申请日：2010-05-21
申请人： Gerhard Ingmar Meijer , Paul A Moskowitz , Thilo Hermann Curt Stoeferle
发明人： Gerhard Ingmar Meijer , Paul A Moskowitz , Thilo Hermann Curt Stoeferle
IPC分类号： G02B6/00 , G02B6/10 , G02F1/035 , G02F1/295
CPC分类号： G02F1/0305 , G02B6/12007 , G02B2006/12145 , G02F1/0327 , G02F1/035 , G02F1/19 , G02F3/022 , G02F2001/0151 , G02F2202/40 , G02F2203/15 , G02F2203/62 , Y10T29/49117
摘要： An electro-optical memory cell having a non-volatile programmable refractive index and a method of making. The memory cell includes: a waveguiding structure having a transition metal oxide with oxygen vacancies; a plurality of electrodes for applying an electrical field; and an optical detector for detecting a state of the memory cell. The method includes: fabricating a waveguiding structure having a transition metal oxide with oxygen vacancies; positioning a plurality of electrodes for application of an electric field; arranging the transition metal oxide and the electrodes such that when an electric field is applied, the oxygen vacancies migrate in a direction that has a component which is radial relative to a center of the beam path; applying the electric field thereby programming the refractive index to set a state of the memory cell; and detecting the state of the memory cell using an optical detector.
摘要翻译：一种具有非易失性可编程折射率的电光存储单元及其制造方法。存储单元包括：具有氧空位的过渡金属氧化物的波导结构; 用于施加电场的多个电极; 以及用于检测存储单元的状态的光学检测器。该方法包括：制造具有氧空位的过渡金属氧化物的波导结构; 定位用于施加电场的多个电极; 布置过渡金属氧化物和电极使得当施加电场时，氧空位沿具有相对于光束路径的中心径向的分量的方向迁移; 施加电场，从而编程折射率以设置存储单元的状态; 以及使用光学检测器检测存储器单元的状态。

37. 发明授权

US07923263B2 Non-volatile resistance switching memory 有权
标题翻译：非易失性电阻切换存储器
公开(公告)号：US07923263B2
公开(公告)日：2011-04-12
申请号：US12540949
申请日：2009-08-13
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
摘要翻译：一种微电子器件或非易失性电阻切换存储器，包括用于存储数字信息的切换材料。一种方法包括通过CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。

38. 发明授权

US07897411B2 Non-volatile resistance switching memory 有权
标题翻译：非易失性电阻切换存储器
公开(公告)号：US07897411B2
公开(公告)日：2011-03-01
申请号：US11105849
申请日：2005-04-14
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
摘要翻译：用于沉积切换材料的过程，装置和系统，其可在导电状态之间切换，并且状态持续存在。本发明还涉及包括用于存储数字信息的切换材料的微电子装置或非易失性电阻切换存储器。一种方法包括通过CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。

39. 发明申请

US20100296788A1 ELECTRO-OPTICAL MEMORY CELL 有权
标题翻译：电光记忆细胞
公开(公告)号：US20100296788A1
公开(公告)日：2010-11-25
申请号：US12785007
申请日：2010-05-21
申请人： Gerhard Ingmar Meijer , Paul A. Moskowitz , Thilo Hermann Curt Stoeferle
发明人： Gerhard Ingmar Meijer , Paul A. Moskowitz , Thilo Hermann Curt Stoeferle
IPC分类号： G02B6/10 , H05K13/00
CPC分类号： G02F1/0305 , G02B6/12007 , G02B2006/12145 , G02F1/0327 , G02F1/035 , G02F1/19 , G02F3/022 , G02F2001/0151 , G02F2202/40 , G02F2203/15 , G02F2203/62 , Y10T29/49117
摘要： An electro-optical memory cell having a non-volatile programmable refractive index and a method of making. The memory cell includes: a waveguiding structure having a transition metal oxide with oxygen vacancies; a plurality of electrodes for applying an electrical field; and an optical detector for detecting a state of the memory cell. The method includes: fabricating a waveguiding structure having a transition metal oxide with oxygen vacancies; positioning a plurality of electrodes for application of an electric field; arranging the transition metal oxide and the electrodes such that when an electric field is applied, the oxygen vacancies migrate in a direction that has a component which is radial relative to a center of the beam path; applying the electric field thereby programming the refractive index to set a state of the memory cell; and detecting the state of the memory cell using an optical detector.
摘要翻译：一种具有非易失性可编程折射率的电光存储单元及其制造方法。存储单元包括：具有氧空位的过渡金属氧化物的波导结构; 用于施加电场的多个电极; 以及用于检测存储单元的状态的光学检测器。该方法包括：制造具有氧空位的过渡金属氧化物的波导结构; 定位用于施加电场的多个电极; 布置过渡金属氧化物和电极使得当施加电场时，氧空位沿具有相对于光束路径的中心径向的分量的方向迁移; 施加电场，从而编程折射率以设置存储单元的状态; 以及使用光学检测器检测存储单元的状态。

40. 发明授权

US07791141B2 Field-enhanced programmable resistance memory cell 失效
标题翻译：现场增强型可编程电阻存储单元
公开(公告)号：US07791141B2
公开(公告)日：2010-09-07
申请号：US11176173
申请日：2005-07-07
申请人： Gerhard Ingmar Meijer , Chung Hon Lam , Hon-Sum Phillip Wong
发明人： Gerhard Ingmar Meijer , Chung Hon Lam , Hon-Sum Phillip Wong
IPC分类号： H01L29/76
CPC分类号： H01L45/04 , H01L27/20 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/147 , H01L45/16
摘要： Provides a field-enhanced programmable resistance memory cell. In an example embodiment, a resistor includes a resistance structure between a first electrode and a second electrode. The resistance structure includes an insulating dielectric material. The second electrode includes a protrusion extending into the resistance structure. The insulating dielectric material includes a material in which a confined conductive region with a programmable resistance is formable via a conditioning signal.
摘要翻译：提供一个场增强型可编程电阻存储单元。在示例性实施例中，电阻器包括在第一电极和第二电极之间的电阻结构。电阻结构包括绝缘介电材料。第二电极包括延伸到电阻结构中的突起。绝缘电介质材料包括其中通过调节信号可形成具有可编程电阻的受限导电区域的材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式