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    • 40. 发明申请
    • NON-VOLATILE STORAGE DEVICE
    • 非易失存储器件
    • US20080098190A1
    • 2008-04-24
    • US11963913
    • 2007-12-24
    • Yoshinori TakaseKeiichi YoshidaTakashi HoriiAtsushi NozoeTakayuki TamuraTomoyuki FujisawaKen Matsubara
    • Yoshinori TakaseKeiichi YoshidaTakashi HoriiAtsushi NozoeTakayuki TamuraTomoyuki FujisawaKen Matsubara
    • G06F12/00
    • G06F12/0246G06F12/0893G06F2212/2022G06F2212/7203G11C16/06G11C16/10G11C16/26G11C2216/22
    • A non-volatile storage device (1) has non-volatile memory units (FARY0 to FARY3), buffer units (BMRY0 to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside. Consequently, it is possible to reduce the overhead of a data transfer for reading/writing data from/to the non-volatile storage device.
    • 非易失性存储设备(1)具有非易失性存储单元(FARY 0至FARY 3),缓冲单元(BMRY 0至BMRY 3)和控制单元(CNT)),并且控制单元可以控制第一访问处理 在外部和缓冲单元之间以及从外部分别接收到伪指令之后的非易失性存储单元和缓冲单元之间的第二访问处理。 控制单元可以分别根据从外部发送的指令独立地对非易失性存储器单元和缓冲单元执行访问控制。 因此,可以与非易失性存储器单元的擦除操作同时地将缓冲单元的下一个写入数据设置为缓冲单元,或者按照高速缓存存储器操作中的高速将高速存储信息一次性地输出到缓冲器单元 指令从外面发出。 因此,可以减少用于从/向非易失性存储装置读/写数据的数据传输的开销。