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31. 发明授权

US5558945A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5558945A
公开(公告)日：1996-09-24
申请号：US360965
申请日：1994-12-21
申请人： Shinji Miyazaki , Jiro Yoshinari , Koji Kobayashi
发明人： Shinji Miyazaki , Jiro Yoshinari , Koji Kobayashi
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/1266 , Y10T428/12861 , Y10T428/24942 , Y10T428/24975
摘要： A magnetic recording medium having excellent electromagnetic characteristics, still characteristics and cupping, decreased rust generation and high durability, includes a non-magnetic substrate and a magnetic layer formed thereon by oblique deposition, the magnetic layer being composed of at least two ferromagnetic thin films, in which the ferromagnetic thin film of the lowest layer has a saturation magnetization of 300 emu/cc or less, a coercive force of 1000 Oe or less and a thickness of 300 to 1500 .ANG., the ferromagnetic thin layer of the uppermost layer has a saturation magnetization of 300 emu/cc or more, a coercive force of 1000 Oe or more and a thickness of 400 to 1500 .ANG., an average value (.theta.) of angles between growing directions of columnar crystalline particles constituting the ferromagnetic thin film of the lowest layer and a principal plane of the substrate ranges from 50 to 70 degrees, and an average value (.theta.) of angles between growing directions of columnar crystalline particles constituting the ferromagnetic thin film of the uppermost layer and the principal plane of the substrate ranges from 30 to 50 degrees.
摘要翻译：具有优异的电磁特性，静电特性和拔罐的磁记录介质，减少生锈和高耐久性，包括非磁性基板和通过倾斜沉积在其上形成的磁性层，该磁性层由至少两个铁磁性薄膜组成，其中最低层的铁磁性薄膜具有300emu / cc以下的饱和磁化强度，1000Oe以下的矫顽力和300〜1500的厚度，最上层的铁磁性薄层具有饱和度 300emu / cc以上的磁化，1000Oe以上的矫顽力和400〜1500的厚度ANGSTROM，构成最低层的铁磁性薄膜的柱状结晶粒子的生长方向的平均值（θ）并且衬底的主平面的范围为50至70度，并且生长方向之间的角度的平均值（θ）构成最上层的铁磁性薄膜的柱状结晶粒子和基板的主面的范围为30〜50度。

32. 发明授权

US5131842A Corrosion resistant thermal treating apparatus 失效
标题翻译：耐腐蚀热处理设备
公开(公告)号：US5131842A
公开(公告)日：1992-07-21
申请号：US543491
申请日：1990-06-26
申请人： Shinji Miyazaki , Katushin Miyagi , Mituaki Komino
发明人： Shinji Miyazaki , Katushin Miyagi , Mituaki Komino
IPC分类号： H01L21/302 , C23C16/44 , C30B25/14 , C30B31/16 , F27B17/00 , H01L21/205 , H01L21/22 , H01L21/3065 , H01L21/31
CPC分类号： F27B17/0025 , C23C16/44 , C30B25/14 , C30B31/16
摘要： A thermal treating apparatus includes a reaction tube having an opening end and storing an object to be treated, an annular manifold arranged at the opening end and having an inlet for supplying a gas to the reaction tube and an outlet for exhausting the gas from the reaction tube, and a cover arranged on the opening end of the manifold. The surfaces of the annular manifold and the cover exposed to the inside of the reaction tube are covered by a material which is not corroded by the gas supplied to the reaction tube.
摘要翻译：热处理装置包括具有开口端并存储待处理物体的反应管，设置在开口端的环形歧管，并具有用于向反应管供应气体的入口和用于从反应中排出气体的出口管和布置在歧管的开口端上的盖。暴露于反应管内部的环形歧管和盖的表面被不被供应到反应管的气体腐蚀的材料覆盖。

33. 发明授权

US5069244A Liquid source container device 失效
标题翻译：液体容器装置
公开(公告)号：US5069244A
公开(公告)日：1991-12-03
申请号：US635655
申请日：1990-12-28
申请人： Shinji Miyazaki , Yoshitaka Tsunashima
发明人： Shinji Miyazaki , Yoshitaka Tsunashima
IPC分类号： B01J7/00 , C23C16/44 , C23C16/448 , C30B25/14 , H01L21/205
CPC分类号： C23C16/448 , C30B25/14 , Y10T137/3127 , Y10T137/4259
摘要： A liquid source container device is used for a liquid gas source for a semiconductor manufacturing device. This container device includes a main body for containing a source liquid, to which a gas supply line for transferring the source liquid, and a source liquid delivery line for delivering the liquid are connected. The gas supply line has first and second gas supply valves provided thereon, and the liquid delivery line has first and second liquid delivery valves also provided thereon. A section of the gas supply line which is located between the first and second gas supply valves and a section of the liquid delivery line which is located between the first and second delivery valves are connected with each other by means of a purge line which has a purge valve provided thereon. By operating the purge line, the purge valve, and the four valves, the efficiency of purge-drying procedures carried out before and after transferring the source liquid, is improved, and therefore the container device, as well as the semiconductor manufacturing device can be prevented from being contaminated.

34. 发明申请

US20120318727A1 MEDICAL DEVICE AND HOLLOW FIBER MEMBRANE-BASED MEDICAL DEVICE 审中-公开
标题翻译：医疗器械和中空纤维膜医疗器械
公开(公告)号：US20120318727A1
公开(公告)日：2012-12-20
申请号：US13579702
申请日：2011-02-17
申请人： Katsuji Kawatani , Shinji Miyazaki , Toshinori Koizumi
发明人： Katsuji Kawatani , Shinji Miyazaki , Toshinori Koizumi
IPC分类号： A61M1/18 , B01D63/02
CPC分类号： B01D65/022 , A61M1/16 , A61M2209/06 , B01D63/02 , B01D63/022 , B01D2313/04 , B01D2313/21 , B01D2321/34
摘要： It is intended to provide a highly reliable medical device, for example, hollow fiber membrane-type medical device, which can effectively prevent the occurrence of dielectric breakdown in an electron beam irradiation sterilization step. The present invention provides a hollow fiber membrane-type medical device comprising: a container having an inner space molded with an insulating material; a filter medium loaded in the inner space; an inlet provided on a container wall surface defining the inner space and intended for fluid influx into the container; an outlet provided on the container wall surface defining the inner space and intended for fluid efflux from the container, wherein the inlet and/or the outlet have a portion consisting of a polymer material having volume resistivity of 5×1013 Ω·cm or smaller, and the medical device has been irradiated with an electron beam.
摘要翻译：旨在提供一种高度可靠的医疗装置，例如中空纤维膜型医疗装置，其能够有效地防止电子束照射灭菌工序中的电介质击穿的发生。本发明提供一种中空纤维膜型医疗装置，其包括：容器，其具有用绝缘材料成型的内部空间; 装载在内部空间中的过滤介质; 设置在容器壁表面上的限定内部空间并用于流体流入容器的入口; 设置在容器壁表面上的出口，其限定内部空间并用于从容器流出的流体，其中入口和/或出口具有由体积电阻率为5×10 13Ω·cm或更小的聚合物材料组成的部分并且医疗装置已经被电子束照射。

35. 发明申请

US20120273706A1 PRESSURE CONTROL DEVICE 有权
标题翻译：压力控制装置
公开(公告)号：US20120273706A1
公开(公告)日：2012-11-01
申请号：US13454330
申请日：2012-04-24
申请人： Mari Kusunoki , Takuo Ohashi , Shinji Miyazaki , Norihiko Kamiura
发明人： Mari Kusunoki , Takuo Ohashi , Shinji Miyazaki , Norihiko Kamiura
IPC分类号： F16K31/02
CPC分类号： G05D16/2013 , F16K31/04 , F16K31/10 , F16K31/445 , H01L21/67253 , Y10T137/7761
摘要： A pressure control device according to an embodiment includes a solenoid portion for regulating a gate opening of a valve through a first shaft portion connected to the valve, a micrometer for regulating the gate opening through the first shaft portion and a second shaft portion having an axial direction which is parallel with that of the first shaft portion when the second shaft portion is connected to the first shaft portion, and a switching portion. The switching portion switches to cause the solenoid portion to regulate the gate opening or to cause the micrometer to regulate the gate opening.
摘要翻译：根据实施例的压力控制装置包括：螺线管部分，用于通过连接到阀的第一轴部分来调节阀门的开口;调节器，用于调节通过第一轴部分的门开口;以及第二轴部分，在第二轴部与第一轴部连接时与第一轴部的方向平行的方向和切换部。切换部分切换以使螺线管部分调节门开口或使千分尺调节门开口。

36. 发明申请

US20080047581A1 Vapor phase growth and apparatus and its cleaning method 审中-公开
标题翻译：气相生长及其清洗方法
公开(公告)号：US20080047581A1
公开(公告)日：2008-02-28
申请号：US11785184
申请日：2007-04-16
申请人： Shinji Miyazaki
发明人： Shinji Miyazaki
IPC分类号： B08B3/00 , B08B6/00
CPC分类号： B08B7/0035 , B08B7/00 , C23C16/4405
摘要： A mass flow controller is connected to an exhaust path of a reaction chamber. A controller detects cleaning completion in accordance with a change of an output signal of the mass flow controller in cleaning the reaction chamber.
摘要翻译：质量流量控制器连接到反应室的排气路径。控制器根据质量流量控制器在清洁反应室中的输出信号的变化来检测清洗完成。

37. 发明授权

US6042938A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US6042938A
公开(公告)日：2000-03-28
申请号：US992088
申请日：1997-12-17
申请人： Tsunehiko Ikarashi , Masahide Kohno , Shinji Miyazaki
发明人： Tsunehiko Ikarashi , Masahide Kohno , Shinji Miyazaki
IPC分类号： C09D175/04 , G11B5/72 , G11B5/735 , G11B5/68
CPC分类号： G11B5/735 , Y10S428/90 , Y10T428/25
摘要： A magnetic recording medium includes a non-magnetic supporting substrate, and a magnetic layer on one surface thereof and a back coat layer on the other surface thereof, said back coat layer having a non-magnetic powder dispersed in a binder. The back coat layer contains carbon black and an inorganic powder as said non-magnetic powder. The carbon black contains a carbon black species having an average primary particle diameter of 40 to 70 nm, and the inorganic powder has an average primary particle diameter of 40 to 150 nm and a Mohs hardness of at least 3, with a weight ratio between said carbon black and said inorganic powder being 100:0.5 to 100:10. The binder comprises a phenoxy resin, a thermoplastic polyurethane resin having an amino group in a molecule thereof, and a polyisocyanate compound.
摘要翻译：磁记录介质包括非磁性支撑基板，在其一个表面上具有磁性层，在另一个表面上具有背涂层，所述背涂层具有分散在粘合剂中的非磁性粉末。背涂层含有炭黑和作为非磁性粉末的无机粉末。炭黑含有平均一次粒径为40〜70nm的碳黑物质，无机粉末的平均一次粒径为40〜150nm，莫氏硬度为3以上，重量比为炭黑，所述无机粉末为100:0.5〜100:10。粘合剂包含苯氧基树脂，分子中具有氨基的热塑性聚氨酯树脂和多异氰酸酯化合物。

38. 发明授权

US6017620A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US6017620A
公开(公告)日：2000-01-25
申请号：US055961
申请日：1998-04-07
申请人： Jiro Yoshinari , Shinji Miyazaki , Hiroyasu Inoue
发明人： Jiro Yoshinari , Shinji Miyazaki , Hiroyasu Inoue
IPC分类号： G11B11/105 , B05D3/04
CPC分类号： G11B11/10586 , G11B11/10521 , G11B11/10584 , Y10S428/90
摘要： The invention is directed at a magneto-optical recording medium which is directly overwritable by light intensity modulation, does not require an initializing magnet, and has on the surface side of a substrate four magnetic layers, a memory layer M.sub.1, a writing layer W.sub.2, a switching layer S.sub.3, and an initializing layer I.sub.4. The magnetic layers each contain a rare earth element and a transition element, have perpendicular magnetic anisotropy at room temperature, and satisfy the relationships:Tc.sub.I4 >Tc.sub.W2 >Tc.sub.M1 and Tc.sub.I4 >Tc.sub.W2 >Tc.sub.S3wherein Tc.sub.M1, Tc.sub.W2, Tc.sub.S3 and Tc.sub.I4 are the Curie temperatures of M.sub.1, W.sub.2, S.sub.3 and I.sub.4, respectively. Writing layer W.sub.2 is composed mainly of dysprosium, iron and cobalt, contains from 29-35 atomic percent of rare earth elements, and has an atomic ratio Fe/(Fe+Co) of from 0.40 to 0.58. This medium has an improved CNR, minimizes deterioration in the CNR with repeated overwriting, enhances storage reliability, and has an increased output.
摘要翻译：本发明涉及一种通过光强度调制直接覆盖的磁光记录介质，不需要初始化磁体，并且在基板的表面侧上具有四个磁性层，存储层M1，书写层W2，开关层S3和初始化层I4。磁性层各自含有稀土元素和过渡元素，在室温下具有垂直的磁各向异性，并且满足TcI4> TcW2> TcM1和TcI4> TcW2> TcS3的关系，其中TcM1，TcW2，TcS3和TcI4为居里温度分别为M1，W2，S3和I4。写作层W2主要由镝，铁和钴组成，含有29-35原子％的稀土元素，原子比Fe /（Fe + Co）为0.40〜0.58。该介质具有改进的CNR，可以最大程度地减少CNR的恶化，反复重写，提高存储可靠性，并增加输出。

39. 发明授权

US5972435A Method for forming film by plasma polymerization and apparatus for forming film by plasma polymerization 有权
标题翻译：通过等离子体聚合形成膜的方法和通过等离子体聚合形成膜的装置
公开(公告)号：US5972435A
公开(公告)日：1999-10-26
申请号：US125744
申请日：1998-08-24
申请人： Mitsuru Takai , Shinji Miyazaki , Kunihiro Ueda , Hiromichi Kanazawa
发明人： Mitsuru Takai , Shinji Miyazaki , Kunihiro Ueda , Hiromichi Kanazawa
IPC分类号： B05D7/24 , C08F2/46 , C23C14/12 , C23C14/56
CPC分类号： B05D1/62 , C23C14/12 , C23C14/562
摘要： The present invention manifests a highly excellent effect of allowing the plasma polymerization film to be formed stably for a long time while very rarely suffering occurrence of abnormal discharge during the formation of the plasma polymerization film and promoting the improvement of the yield of products because it adopts as the electrode for implementing plasma polymerization that of the electrodes which is located on the side confronting a surface on which the plasma polymerization film is formed, coats this electrode with a polymer material at a covering ratio in the range of 50-100%, and effects the formation of the plasma polymerization film on an elongate substrate under the operating pressure in the range of 10.sup.-3 -1 Torr. Further, the properties of the plasma polymerization film also become highly excellent.
摘要翻译： PCT No.PCT / JP97 / 04866 Sec。 371日期：1998年8月24日 102（e）日期1998年8月24日PCT 1997年12月26日PCT公布。公开号WO98 / 29578 日期1998年7月9日本发明表现出非常优异的使等离子体聚合膜长时间稳定形成，并且在形成等离子体聚合膜期间极少发生异常放电并促进产率提高的效果的产品，因为其采用用于实现等离子体聚合的电极，该电极位于与形成等离子体聚合膜的表面相对的一侧，用聚合物材料以覆盖率覆盖在50的范围内 -100％，并且在10-3-1乇范围内的操作压力下，在细长衬底上形成等离子体聚合膜。此外，等离子体聚合膜的性质也变得非常优异。

40. 发明授权

US5252133A Vertically oriented CVD apparatus including gas inlet tube having gas injection holes 失效
标题翻译：包括具有气体注入孔的气体入口管的垂直取向的CVD装置
公开(公告)号：US5252133A
公开(公告)日：1993-10-12
申请号：US809122
申请日：1991-12-18
申请人： Shinji Miyazaki , Yuichi Mikata , Takahiko Moriya , Reiji Niino , Motohiko Nishimura
发明人： Shinji Miyazaki , Yuichi Mikata , Takahiko Moriya , Reiji Niino , Motohiko Nishimura
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C30B25/14 , H01L21/205 , H01L21/22 , C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C30B25/14
摘要： A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree.

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