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31. 发明授权

US07402491B2 Methods of manufacturing a semiconductor device including a dielectric layer including zirconium 失效
标题翻译：制造包括锆的介电层的半导体器件的方法
公开(公告)号：US07402491B2
公开(公告)日：2008-07-22
申请号：US11261737
申请日：2005-10-28
申请人： Han-Mei Choi , Kyoung-Ryul Yoon , Seung-Hwan Lee , Ki-Yeon Park , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo
发明人： Han-Mei Choi , Kyoung-Ryul Yoon , Seung-Hwan Lee , Ki-Yeon Park , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo
IPC分类号： H01L21/336
CPC分类号： H01L21/0228 , H01L21/02189 , H01L21/28273 , H01L21/3141 , H01L21/31641 , H01L27/11521
摘要： A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.
摘要翻译：制造半导体器件的方法可以包括在衬底上形成隧道氧化物层，在隧道氧化物层上形成浮栅，并使用ALD工艺在浮栅上形成电介质层图案。介电层图案可以包括包含锆和氧化剂的金属前体。可以在电介质层图案上形成控制栅极。半导体器件可以包括本文提供的电介质层图案。

32. 发明授权

US07359630B2 Evaporation source for evaporating an organic electroluminescent layer 有权
标题翻译：用于蒸发有机电致发光层的蒸发源
公开(公告)号：US07359630B2
公开(公告)日：2008-04-15
申请号：US11514261
申请日：2006-09-01
申请人： Kyung-Soo Yi , Sung-Jae Jung , Yoon-Heung Tak , Sung-Tae Kim , Gol-Hee Lee
发明人： Kyung-Soo Yi , Sung-Jae Jung , Yoon-Heung Tak , Sung-Tae Kim , Gol-Hee Lee
IPC分类号： C23C14/24
CPC分类号： C23C14/12 , C23C14/243
摘要： The present invention relates to an evaporation source for evaporating an organic electroluminescent layer. In particular, the present invention relates to the evaporation source preventing an aperture, through which a vaporized evaporation material is emitted, from being clogged by restricting heat transfer to outward. The evaporation source according to the present invention includes a cell retaining an evaporation material therein; a cell cap installed on the upper part of the cell and having a cell cap aperture for emitting a vaporized evaporation material; an external wall placed in the outside of the cell to support a heating means set up at the outside of the cell; a cover placed above the cell cap, fixed to the upper end of the external wall, and having a cover aperture corresponding to the cell cap aperture; and a shut-off plate placed between the cover and the cell cap and having a shut-off plate aperture corresponding to the cell cap aperture and the cover aperture in the center of the shut-off plate.
摘要翻译：本发明涉及蒸发有机电致发光层的蒸发源。特别地，本发明涉及防止通过限制向外传热的方式堵塞蒸发蒸发材料的孔的蒸发源。根据本发明的蒸发源包括在其中保留蒸发材料的电池; 电池盖安装在电池的上部并具有用于发射汽化蒸发材料的电池盖孔; 设置在电池外部的外壁，以支撑设置在电池外部的加热装置; 固定在外壁的上端，并具有对应于电池盖孔的盖孔的盖子上的盖子; 以及置于盖和电池盖之间并具有对应于电池盖开口的关闭板孔和关闭板中心的盖孔的截止板。

33. 发明授权

US07279392B2 Thin film structure, capacitor, and methods for forming the same 有权
标题翻译：薄膜结构，电容器及其形成方法
公开(公告)号：US07279392B2
公开(公告)日：2007-10-09
申请号：US11046876
申请日：2005-02-01
申请人： Seung-Hwan Lee , Kyoung-Ryul Yoon , Han-Mei Choi , Dae-Sik Choi , Ki-Yeon Park , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo
发明人： Seung-Hwan Lee , Kyoung-Ryul Yoon , Han-Mei Choi , Dae-Sik Choi , Ki-Yeon Park , Sung-Tae Kim , Young-Sun Kim , Cha-Young Yoo
IPC分类号： H01L21/20 , H01L29/00
CPC分类号： C23C16/45529 , C23C16/308 , C23C16/405 , H01L27/11502 , H01L27/11507
摘要： A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be formed on the first film to suppress crystallization of the first film. A capacitor may include a dielectric layer, which may further include the first thin film and the second thin film.
摘要翻译：薄膜结构和使用该薄膜结构的电容器及其形成方法。薄膜结构可以包括使用第一反应物和用于氧化第一反应物的氧化剂在基底上形成的第一膜。可以在第一膜上形成第二膜以抑制第一膜的结晶。电容器可以包括电介质层，其可以进一步包括第一薄膜和第二薄膜。

34. 发明申请

US20060204681A1 Broadband reflection type brightness enhancement polarizer and liquid crystal display having the same 失效
公开(公告)号：US20060204681A1
公开(公告)日：2006-09-14
申请号：US11369791
申请日：2006-03-07
申请人： Keon-Il Kim , Sung-Tae Kim , Ki-Cheol Yoon , Nam Ki , Hunkyun Pak , Jae-Chul Jung
发明人： Keon-Il Kim , Sung-Tae Kim , Ki-Cheol Yoon , Nam Ki , Hunkyun Pak , Jae-Chul Jung
IPC分类号： G02F1/1335 , C09K19/36
CPC分类号： C09K19/2007 , C09K19/588 , C09K2019/0448 , C09K2219/03 , G02B5/3016 , Y10T428/10 , Y10T428/1005 , Y10T428/1036 , Y10T428/1041
摘要： Disclosed is a broadband reflection type brightness enhancement polarizer, which includes a cholesteric liquid crystal film laminate having a broadband selective reflecting wavelength range in which a plurality of cholesteric liquid crystal films having selective reflecting wavelength ranges different from each other by having different mixture ratios of a curable nematic liquid crystal compound expressed by the chemical formula 1 and a curable chiral compound expressed by the chemical formula 2 are laminated; and a film having ¼λ phase difference laminated on one surface of the cholesteric liquid crystal film laminate. This polarizer has wide selective reflecting wavelength ranges of the cholesteric liquid crystal films composing the polarizer, so the entire visible ray range can be covered just by laminating several cholesteric liquid crystal films. Accordingly, the polarizer may be manufactured relatively thinner, so the brightness can be greatly improved when the polarizer is applied to a liquid crystal display.

35. 发明授权

US07094712B2 High performance MIS capacitor with HfO2 dielectric 失效
标题翻译：具有HfO2电介质的高性能MIS电容器
公开(公告)号：US07094712B2
公开(公告)日：2006-08-22
申请号：US10793818
申请日：2004-03-08
申请人： Ki-Vin Im , Ki-Yeon Park , Jae-Hyun Yeo , In-Sung Park , Seung-Hwan Lee , Young-Sun Kim , Sung-Tae Kim
发明人： Ki-Vin Im , Ki-Yeon Park , Jae-Hyun Yeo , In-Sung Park , Seung-Hwan Lee , Young-Sun Kim , Sung-Tae Kim
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02181 , H01L21/022 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.
摘要翻译：公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地是HfO 2 电介质层的方法，其中形成一系列薄的中间层并用一个或多个在下一个中间层之前形成氧化剂和氮。中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能材料

36. 发明授权

US06992346B2 Integrated circuit devices with metal-insulator-metal capacitors 有权
标题翻译：具有金属 - 绝缘体 - 金属电容器的集成电路器件
公开(公告)号：US06992346B2
公开(公告)日：2006-01-31
申请号：US10807000
申请日：2004-03-23
申请人： Ki-Chul Kim , Young-Sun Kim , Gab-Jin Nam , Sung-Tae Kim , Thomas Jongwan Kwon , Han-Mei Choi , Jae-Soon Lim
发明人： Ki-Chul Kim , Young-Sun Kim , Gab-Jin Nam , Sung-Tae Kim , Thomas Jongwan Kwon , Han-Mei Choi , Jae-Soon Lim
IPC分类号： H01L29/096
CPC分类号： H01L21/32051 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/10894 , H01L27/10897 , H01L28/91
摘要： A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.
摘要翻译：导电接触插塞延伸穿过电介质层中的开口以接触衬底并且包括延伸到邻近开口的电介质层上的加宽焊盘部分。欧姆图案设置在插头的焊盘部分上，并且阻挡图案设置在欧姆图案上。凹陷的第一电容器电极设置在阻挡图案上并且限定了远离基板的空腔。电容器电介质层符合第一电容器电极的表面，并且第二电容器电极设置在与第一电容器电极相对的电容器电介质层上。欧姆图案的侧壁，接触塞的阻挡图案和焊盘部分可以是基本上共面的，并且该器件还可以包括符合至少欧姆图案的侧壁，阻挡图案和焊盘部分的蚀刻停止层接触插头。描述相关的制造方法。

37. 发明授权

US06897106B2 Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same 失效
标题翻译：具有复合Al2O3 / HfO2电介质层的半导体存储器件的电容器及其制造方法
公开(公告)号：US06897106B2
公开(公告)日：2005-05-24
申请号：US10713577
申请日：2003-11-12
申请人： Ki-Yeon Park , Sung-Tae Kim , Young-Sun Kim , In-Sung Park , Jae-Hyun Yeo , Ki-Vin Im
发明人： Ki-Yeon Park , Sung-Tae Kim , Young-Sun Kim , In-Sung Park , Jae-Hyun Yeo , Ki-Vin Im
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108
CPC分类号： H01L28/40 , H01L21/3141 , H01L21/3142 , H01L21/31616 , H01L21/31645 , H01L28/56 , H01L28/65 , H01L28/75
摘要： A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.
摘要翻译：一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 / HfO 2 电介质层，并提供一种制造该电容器的方法。电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3电介质层和HfO 2 N 2介电层下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

38. 发明授权

US06186779B1 Wafer clamp for a heater assembly 有权
标题翻译：用于加热器组件的晶片夹
公开(公告)号：US06186779B1
公开(公告)日：2001-02-13
申请号：US09334133
申请日：1999-06-15
申请人： Hae-Moon Choi , Sung-Tae Kim , Hyun-Kuk Ko , Dae-Moon Kim
发明人： Hae-Moon Choi , Sung-Tae Kim , Hyun-Kuk Ko , Dae-Moon Kim
IPC分类号： F27D500
CPC分类号： H01L21/68721 , C30B25/12 , C30B31/14 , H01L21/68785
摘要： A clamp holds a semiconductor wafer during an Al reflow process. The clamp is made of a ceramic material, and thereby clamp surface roughening which damages semiconductor wafers and other damaging of the wafer caused by the deformation of the clamp are avoided. A sloped surface of the clamp pad can also reduce the damage on the wafer by reducing the contact area between the clamp pad and the wafer. In addition, the clamp has several features that can reduce heat dissipation from the wafer to outside during the Al reflow. Slots formed on the pad reduce the amount of heat conduction through the clamp, and the polished inner surface of the clamp cap reflects the heat radiated from the wafer back to the wafer.
摘要翻译：夹具在Al回流焊过程中保持半导体晶片。夹具由陶瓷材料制成，从而避免了由于夹具的变形而损坏半导体晶片和损坏晶片的表面粗糙化。夹持垫的倾斜表面还可以通过减小夹紧垫和晶片之间的接触面积来减小晶片上的损坏。此外，夹具具有几个特征，可以在铝回流期间减少晶片向外部的散热。形成在垫上的槽减少了通过夹具的热传导量，并且夹持盖的抛光内表面将从晶片辐射的热量反射回晶片。

39. 发明授权

US6077772A Methods of forming metal interconnections including thermally treated barrier layers 有权
标题翻译：形成包括热处理阻挡层的金属互连的方法
公开(公告)号：US6077772A
公开(公告)日：2000-06-20
申请号：US270174
申请日：1999-03-16
申请人： In-Seon Park , Sung-Tae Kim , Du-Hwan Lee , Won-Goo Hur
发明人： In-Seon Park , Sung-Tae Kim , Du-Hwan Lee , Won-Goo Hur
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76856 , H01L21/76843 , H01L21/76882
摘要： A method of forming a metal interconnection includes the steps of forming a first conductive layer on a substrate, and forming an insulating layer on the first conductive layer and on the substrate. A contact hole is formed in the insulating layer thereby exposing a portion of the first conductive layer, a barrier layer is formed on the exposed portion of the first conductive layer in the contact hole, and a thermal treatment is performed on the barrier layer. After the step of performing the thermal treatment, a wetting layer is formed on a sidewall of the contact hole, and a second conductive layer is formed on the barrier layer and on the wetting layer in the contact hole.
摘要翻译：形成金属互连的方法包括以下步骤：在衬底上形成第一导电层，并在第一导电层和衬底上形成绝缘层。在绝缘层中形成接触孔，从而露出第一导电层的一部分，在接触孔中的第一导电层的暴露部分上形成阻挡层，并对阻挡层进行热处理。在进行热处理的步骤之后，在接触孔的侧壁上形成润湿层，并且在阻挡层和接触孔中的润湿层上形成第二导电层。

40. 发明授权

US5657802A One touch opening plug for aquarium fish food containers 失效
标题翻译：水族馆鱼食容器一触式开塞
公开(公告)号：US5657802A
公开(公告)日：1997-08-19
申请号：US565853
申请日：1995-12-01
申请人： Sung-Tae Kim
发明人： Sung-Tae Kim
IPC分类号： B65D47/08 , B65D77/24 , G01F19/00 , B65B1/04
CPC分类号： B65D77/245 , B65D47/0866 , G01F19/002 , B65D2251/1075
摘要： An improved plug structure for aquarium fish food containers is disclosed. The plug of this invention has two depressions for receiving a detachable tap and a detachable spoon respectively. The tap is pivoted to the spoon and easily opened by a one touch motion. Both the spoon and the tap can be easily separated from the plug body at the same time. The above plug thus allows the fixed amount of food to be taken out of the food container thereby saving food. The plug also prevents food from dropping when measuring the fixed amount of food using the spoon.
摘要翻译：公开了一种用于水族箱鱼食品容器的改进的塞子结构。本发明的插头具有两个凹部，用于分别接收可拆卸的水龙头和可拆卸的勺子。水龙头被枢转到勺子，并且通过一触式动作容易地打开。勺子和水龙头可以同时容易地从插头体分离。因此，上述插头允许将固定数量的食物从食物容器中取出，从而节省食物。当使用勺子测量固定量的食物时，塞子还防止食物掉落。

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