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31. 发明授权

US08766224B2 Electrically actuated switch 有权
标题翻译：电动开关
公开(公告)号：US08766224B2
公开(公告)日：2014-07-01
申请号：US11542986
申请日：2006-10-03
申请人： R. Stanley Williams
发明人： R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
摘要： An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
摘要翻译：电驱动开关包括第一电极，第二电极和设置在它们之间的有源区域。活性区域包括至少一个主要活性区域，其包含至少一种可被掺杂或未掺杂以改变其导电性的材料，以及包含至少一种材料的辅助活性区域，用于提供用作掺杂剂的离子物质的源/ 对于主要活动区域。还提供了操作开关的方法。

32. 发明授权

US08750024B2 Memcapacitor 有权
标题翻译：电容器
公开(公告)号：US08750024B2
公开(公告)日：2014-06-10
申请号：US13256245
申请日：2009-06-18
申请人： Alexandre M. Bratkovski , R. Stanley Williams
发明人： Alexandre M. Bratkovski , R. Stanley Williams
IPC分类号： G11C11/24
CPC分类号： G11C11/24 , G11C13/0002 , H01G4/1272 , H01G4/255 , H01G4/33 , H01L27/101 , H01L28/40
摘要： A memcapacitor device (100) includes a first electrode (104) and a second electrode (106) and a memcapacitive matrix (102) interposed between the first electrode (104) and the second electrode (106). Mobile dopants (111) are contained within the memcapacitive matrix (102) and are repositioned within the memcapacitive matrix (102) by the application of a programming voltage (126) across the first electrode (104) and second electrode (106) to alter the capacitance of the memcapacitor (100). A method for utilizing a memcapacitive device (100) includes applying a programming voltage (126) across a memcapacitive matrix (102) such that mobile ions (111) contained within a memcapacitive matrix (102) are redistributed and alter a capacitance of the memcapacitive device (100), then removing the programming voltage (126) and applying a reading voltage to sense the capacitance of the memcapacitive device (100).
摘要翻译：电容器装置（100）包括插入在第一电极（104）和第二电极（106）之间的第一电极（104）和第二电极（106）和存储电容矩阵（102）。移动掺杂剂（111）被包含在存储器电容矩阵（102）内，并且通过跨越第一电极（104）和第二电极（106）施加编程电压（126）而重新定位在存储电容矩阵（102）内，以改变电容器（100）的电容。一种利用存储电容器件（100）的方法包括跨越存储电容矩阵（102）施加编程电压（126），使得包含在存储电容矩阵（102）内的移动离子（111）被重新分配并改变存储器件的电容（100），然后去除所述编程电压（126）并施加读取电压以感测所述存储器件（100）的电容。

33. 发明授权

US08705265B2 Ionic devices containing a membrane between layers 有权
标题翻译：在层之间含有膜的离子装置
公开(公告)号：US08705265B2
公开(公告)日：2014-04-22
申请号：US13383614
申请日：2010-04-30
申请人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
发明人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G02F1/1525
摘要： A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.
摘要翻译：设备包含第一层，第二层; 以及第一和第二层之间的膜。移动离子在第一和第二层中的至少一个中，并且膜对离子是可渗透的。导电膜与第一层和第二层的接触使得离子的极性的电荷在界面处收集。

34. 发明授权

US08660432B2 Image-rotation prisms and optical interconnects employing the same 有权
标题翻译：图像旋转棱镜和使用其的光学互连
公开(公告)号：US08660432B2
公开(公告)日：2014-02-25
申请号：US12922098
申请日：2008-04-02
申请人： Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
发明人： Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
IPC分类号： H04B10/00
CPC分类号： G02B5/04 , G02B27/642 , H01S5/005 , H01S5/02236 , H01S5/02292 , H01S5/183 , H01S5/50 , H04B10/803
摘要： Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board.
摘要翻译：本发明的实施例涉及一系列图像旋转棱镜。每个图像旋转棱镜具有当图像旋转棱镜旋转时，通过图像旋转棱镜的图像以图像旋转棱镜的角速度的两倍旋转。本发明的实施例包括可用于板对板通信并使用图像旋转棱镜补偿光信号的任意轴向旋转和未对准的光学系统，并且可以用于将发射机输出的光信号引导到一个将其连接到位于相邻板上的检测器装置的特定检测器。

35. 发明申请

US20140028995A1 INTEGRATED SENSORS 有权
标题翻译：集成传感器
公开(公告)号：US20140028995A1
公开(公告)日：2014-01-30
申请号：US13452218
申请日：2012-04-20
申请人： Alexandre M. Bratkovski , R. Stanley Williams , Zhiyong Li
发明人： Alexandre M. Bratkovski , R. Stanley Williams , Zhiyong Li
IPC分类号： G01N21/01
CPC分类号： G01N21/01 , G01N21/648 , G01N21/658
摘要： Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a flexible substrate, and an array of spaced apart sensing members formed on a surface of the flexible substrate. Each of the spaced apart sensing members includes a plurality of polygon assemblies. The polygon assemblies are arranged in a controlled pattern on the surface of the flexible substrate such that each of the plurality of polygon assemblies is a predetermined distance from each other of the plurality of polygon assemblies, and each of the plurality of polygon assemblies including collapsible signal amplifying structures controllably positioned in a predetermined geometric shape.
摘要翻译：本文公开了集成传感器的示例。集成传感器的示例包括柔性基板和形成在柔性基板的表面上的间隔开的感测部件阵列。每个间隔开的感测构件包括多个多边形组件。多边形组件以可控的图案布置在柔性基板的表面上，使得多个多边形组件中的每一个距离多个多边形组件中的彼此之间是预定距离，并且多个多边形组件中的每一个包括可折叠信号放大结构可控地定位在预定的几何形状。

36. 发明申请

US20140028347A1 IMPLEMENTING LOGIC CIRCUITS WITH MEMRISTORS 有权
标题翻译：用电磁阀实现逻辑电路
公开(公告)号：US20140028347A1
公开(公告)日：2014-01-30
申请号：US13561978
申请日：2012-07-30
申请人： Warren Robinett , R. Stanley Williams
发明人： Warren Robinett , R. Stanley Williams
IPC分类号： H03K19/173
CPC分类号： H03K19/173 , G11C13/0007 , H03K19/17712 , H03K19/17728
摘要： Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor.
摘要翻译：使用忆阻器实现逻辑可以包括在逻辑单元中具有至少三个忆阻器和偏置电阻器的电路。至少三个忆阻器中的一个是逻辑单元内的输出忆阻器，至少三个忆阻器的其他忆阻器是输入忆阻器。至少三个忆阻器和偏置电阻器中的每一个电连接到电压源，其中施加到至少三个忆阻器中的每一个的每个电压和至少三个忆阻器的偏置电阻器和电阻状态确定输出忆阻器的电阻状态。

37. 发明申请

US20140027705A1 MEMRISTOR CELL STRUCTURES FOR HIGH DENSITY ARRAYS 有权
标题翻译：高密度阵列的电容器结构
公开(公告)号：US20140027705A1
公开(公告)日：2014-01-30
申请号：US13560935
申请日：2012-07-27
申请人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1293 , H01L45/1675
摘要： A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
摘要翻译：忆阻器阵列包括下层交叉梁，与下部交叉梁交叉的上层交叉杆，夹在相交的横梁之间的忆阻单元以及分隔相邻的忆阻单元的孔。还提供了一种形成忆阻器阵列的方法。

38. 发明申请

US20130334485A1 MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT 有权
标题翻译：显示最小的路径流动的电磁元件
公开(公告)号：US20130334485A1
公开(公告)日：2013-12-19
申请号：US14001835
申请日：2011-02-28
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/0688 , H01L27/101 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
摘要翻译：提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区，所述有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的两个开关层。还提供还包括设置在第一电极和第二电极之间的两个有源区，以及设置在两个有源区之间并与之电接触的第三电极的还忆元件。每个有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的开关层。还提供了包括忆阻元件在内的多层结构。

39. 发明申请

US20130278929A1 RAMAN SPECTROSCOPY 审中-公开
标题翻译：拉曼光谱
公开(公告)号：US20130278929A1
公开(公告)日：2013-10-24
申请号：US13451290
申请日：2012-04-19
申请人： Alexandre M. Bratkovski , R. Stanley Williams , Zhiyong Li
发明人： Alexandre M. Bratkovski , R. Stanley Williams , Zhiyong Li
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01J3/021 , G01N21/658
摘要： Apparatus, methods, and hollow metal waveguides to perform surface-enhanced Raman spectroscopy are disclosed. An example apparatus includes a hollow metal waveguide to direct Raman photons from an intermediate location within a volume of the hollow metal waveguide toward a distal end of the hollow metal waveguide, and a mirror to direct incident light from a light source to the intermediate location within the volume of the hollow metal waveguide and to direct at least some of the Raman photons toward the distal end.
摘要翻译：公开了用于执行表面增强拉曼光谱的装置，方法和中空金属波导。示例性装置包括中空金属波导，以将拉曼光子从中空金属波导的体积内的中间位置引向中空金属波导的远端，以及反射镜，用于将来自光源的入射光引导到中间金属波导的中间位置中空金属波导的体积并且将至少一些拉曼光子引向远端。

40. 发明授权

US08547727B2 Memristive device 有权
标题翻译：忆阻器
公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译：忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态在源电极和漏电极之间形成导电路径。

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