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31. 发明授权

US08217489B2 Nonvolatile memory element having a tantalum oxide variable resistance layer 有权
标题翻译：具有氧化钽可变电阻层的非易失性存储元件
公开(公告)号：US08217489B2
公开(公告)日：2012-07-10
申请号：US13246483
申请日：2011-09-27
申请人： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
发明人： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
IPC分类号： H01L29/00
CPC分类号： G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
摘要： A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0
摘要翻译：非易失性存储装置包括第一电极，第二电极，可变电阻层，基于施加在电极之间的电信号在多个电阻状态之间可逆地变化的可变电阻层的电阻值。可变电阻层至少包括氧化钽，并且当氧化钽由TaOx表示时，其被构造为满足0

32. 发明授权

US08154909B2 Resistance variable memory apparatus 有权
标题翻译：电阻变量存储装置
公开(公告)号：US08154909B2
公开(公告)日：2012-04-10
申请号：US13165551
申请日：2011-06-21
申请人： Ryotaro Azuma , Kazuhiko Shimakawa , Satoru Fujii
发明人： Ryotaro Azuma , Kazuhiko Shimakawa , Satoru Fujii
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/009 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A resistance variable memory apparatus (100) of the present invention includes a current suppressing element (116) which is connected in series with each resistance variable layer (114) and whose threshold voltage is VF, and is configured to apply a first voltage V1 to a first wire (WL) associated with a selected nonvolatile memory element, apply a second voltage V2 to a second wire (BL) associated with the selected nonvolatile memory element, apply a third voltage V3 to a first wire (WL) which is not associated with the selected nonvolatile memory element and apply a fourth voltage V4 to a second wire (BL) which is not associated with the selected memory element when writing data or reading data, wherein V2≦V3
摘要翻译：本发明的电阻可变存储装置（100）具有与各个电阻变化层（114）串联连接且阈值电压为VF的电流抑制元件（116），并且将第一电压V1 与所选择的非易失性存储器元件相关联的第一线（WL）将第二电压V2施加到与所选择的非易失性存储器元件相关联的第二线（BL），将第三电压V3施加到不相关联的第一线（WL）使用所选择的非易失性存储元件，并且在写入数据或读取数据时将第四电压V4施加到与选择的存储器元件不相关联的第二电线（BL），其中V2＆nlE; V3

33. 发明申请

US20120074369A1 NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY ELEMENT ARRAY 有权
标题翻译：非易失性存储器件，非易失性存储器元件和非易失性存储元件阵列
公开(公告)号：US20120074369A1
公开(公告)日：2012-03-29
申请号：US13246483
申请日：2011-09-27
申请人： Koichi OSANO , Satoru Fujii , Shunsaku Muraoka
发明人： Koichi OSANO , Satoru Fujii , Shunsaku Muraoka
IPC分类号： H01L45/00
CPC分类号： G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
摘要： A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0
摘要翻译：非易失性存储装置包括第一电极，第二电极，可变电阻层，基于施加在电极之间的电信号在多个电阻状态之间可逆地变化的可变电阻层的电阻值。可变电阻层至少包括氧化钽，并且当氧化钽由TaOx表示时，其被构造为满足0

34. 发明授权

US08022502B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08022502B2
公开(公告)日：2011-09-20
申请号：US12307211
申请日：2008-03-26
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

35. 发明授权

US08018760B2 Resistance variable element and resistance variable memory apparatus 有权
标题翻译：电阻可变元件和电阻变量存储装置
公开(公告)号：US08018760B2
公开(公告)日：2011-09-13
申请号：US12518400
申请日：2007-12-20
申请人： Shunsaku Muraoka , Koichi Osano , Satoru Fujii
发明人： Shunsaku Muraoka , Koichi Osano , Satoru Fujii
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/72 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A resistance variable element of the present invention and a resistance variable memory apparatus using the resistance variable element are a resistance variable element (10) including a first electrode, a second electrode, and a resistance variable layer (3) provided between the first electrode (2) and the second electrode (4) to be electrically connected to the first electrode (2) and the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure represented by a chemical formula of (ZnxFe1-x)Fe2O4, and the resistance variable element (10) has a feature that an electrical resistance between the first electrode (2) and the second electrode (4) increases by applying a first voltage pulse to between the first electrode (2) and the second electrode (4), and the electrical resistance between the first electrode (2) and the second electrode (4) decreases by applying a second voltage pulse whose polarity is the same as the first voltage pulse to between the first electrode (2) and the second electrode (4), and a resistance variable memory apparatus using the resistance variable element (10).
摘要翻译：本发明的电阻可变元件和使用该电阻可变元件的电阻变化存储装置是包括第一电极，第二电极和电阻变化层（3）的电阻变化元件（10） 2）和与第一电极（2）和第二电极（4）电连接的第二电极（4），其中电阻变化层（3）包含具有由以下化学式表示的尖晶石结构的材料：（ Zn x Fe 1-x）Fe 2 O 4，并且电阻可变元件（10）具有通过在第一电极（2）和第二电极（2）之间施加第一电压脉冲来增加第一电极（2）和第二电极和第二电极（4），并且第一电极（2）和第二电极（4）之间的电阻通过施加极性与第一电压脉冲相同的第二电压脉冲而减小（2）和第二电极（4）之间，以及使用该电阻变化元件（10）的电阻变化存储装置。

36. 发明申请

US20100308298A1 NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储器元件和非易失性存储器件，并入非易失性存储元件
公开(公告)号：US20100308298A1
公开(公告)日：2010-12-09
申请号：US12745599
申请日：2009-09-29
申请人： Takeki Ninomiya , Koji Arita , Takumi Mikawa , Satoru Fujii
发明人： Takeki Ninomiya , Koji Arita , Takumi Mikawa , Satoru Fujii
IPC分类号： H01L45/00 , H01L21/16
CPC分类号： H01L45/1675 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element includes a first electrode (103) formed on a substrate (101), a resistance variable layer (108) and a second electrode (107), wherein the resistance variable layer has a multi-layer structure including at least three layers which are a first transition metal oxide layer (104), a second transition metal oxide layer (106) which is higher in oxygen concentration than the first transition metal oxide layer (104), and a transition metal oxynitride layer (105). The second transition metal oxide layer (106) is in contact with either one of the first electrode (103) and the second electrode (107). The transition metal oxynitride layer (105) is provided between the first transition metal oxide layer (104) and the second transition metal oxide layer (106).
摘要翻译：非易失性存储元件包括形成在基板（101）上的第一电极（103），电阻变化层（108）和第二电极（107），其中电阻变化层具有至少三层的多层结构其是第一过渡金属氧化物层（104），氧浓度高于第一过渡金属氧化物层（104）的第二过渡金属氧化物层（106）和过渡金属氮氧化物层（105）。第二过渡金属氧化物层（106）与第一电极（103）和第二电极（107）中的任一个接触。过渡金属氧氮化物层（105）设置在第一过渡金属氧化物层（104）和第二过渡金属氧化物层（106）之间。

37. 发明授权

US07312558B2 Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器和喷墨记录装置
公开(公告)号：US07312558B2
公开(公告)日：2007-12-25
申请号：US11097924
申请日：2005-04-01
申请人： Satoru Fujii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii
发明人： Satoru Fujii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii
IPC分类号： H01L41/187 , H01L41/04 , H01L41/16
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1645 , B41J2/1646 , G01C19/5607 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.
摘要翻译：在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16）并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成，的添加量为1摩尔％〜50摩尔％。形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

38. 发明授权

US06832721B2 Authentication system using information on position 有权
标题翻译：认证系统使用位置信息
公开(公告)号：US06832721B2
公开(公告)日：2004-12-21
申请号：US09968881
申请日：2001-10-03
申请人： Satoru Fujii
发明人： Satoru Fujii
IPC分类号： G06K500
CPC分类号： G06F21/34 , G06F2221/2111 , G06Q20/32 , G06Q20/3224 , G06Q20/40 , G06Q20/403 , G07C9/00039 , G07C9/00111
摘要： An authentication system and method uses information on a position of a card as determined, for example, by detecting a position of a user's cell phone and the position of a card reader determined from card reader identification data. If the card is used in a card reader located near the user's cell phone, and the usual card authorizations are approved, it is determined that the card use is authorized. The position information thus serves as an additional level of security against a lost or stolen card.
摘要翻译：认证系统和方法使用例如通过检测用户的手机的位置和由读卡器识别数据确定的读卡器位置确定的卡的位置信息。如果在位于用户手机附近的读卡器中使用卡，并且通常的卡授权被批准，则确定卡的使用被授权。因此，位置信息作为针对丢失或被盗卡的额外的安全级别。

39. 发明授权

US06437203B1 Process for producing iodinated aromatic compounds 有权
标题翻译：生产碘化芳香族化合物的方法
公开(公告)号：US06437203B1
公开(公告)日：2002-08-20
申请号：US09567434
申请日：2000-05-10
申请人： Taichi Shintou , Satoru Fujii , Shinji Kubo
发明人： Taichi Shintou , Satoru Fujii , Shinji Kubo
IPC分类号： C07C1700
CPC分类号： C07C209/74 , C07B39/00 , C07C17/12 , C07C25/22 , C07C211/56
摘要： Disclosed is a process for producing an iodinated aromatic compound, which comprises reacting an aromatic compound with an iodine compound in the presence of a chlorate as an oxidizing agent.
摘要翻译：公开了一种制备碘化芳族化合物的方法，其包括在氯酸盐作为氧化剂存在下使芳族化合物与碘化合物反应。

40. 发明授权

US5989395A Ferroelectric thin film and method of manufacturing the same 失效
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US5989395A
公开(公告)日：1999-11-23
申请号：US730315
申请日：1996-10-11
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
IPC分类号： C04B35/472 , C23C14/08 , C23C14/34 , C30B23/02 , H01L37/02 , H01L41/316
CPC分类号： H01L41/316 , C04B35/472 , C23C14/08 , C23C14/3414 , C30B23/02 , C30B29/32 , H01L37/025
摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.MgO], where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.
摘要翻译：铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。以这种方式，可以制造含有例如[（1-x）.Pb1-yLayTi1-y / 4O3 + x.MgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。

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