专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20130287054A1 DISTRIBUTED FEEDBACK-LASER DIODES 有权
标题翻译：分布式反馈激光二极管
公开(公告)号：US20130287054A1
公开(公告)日：2013-10-31
申请号：US13614280
申请日：2012-09-13
申请人： Oh Kee KWON , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
发明人： Oh Kee KWON , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
IPC分类号： H01S5/30 , H01S5/34
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：提供分布式反馈激光二极管。分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

32. 发明授权

US08937980B2 Distributed feedback-laser diodes 有权
标题翻译：分布式反馈激光二极管
公开(公告)号：US08937980B2
公开(公告)日：2015-01-20
申请号：US13614280
申请日：2012-09-13
申请人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
发明人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：提供分布式反馈激光二极管。分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

33. 发明授权

US08837537B2 Laser diode for controlling spatial hole burning and optical pulse generating method 有权
标题翻译：用于控制空穴燃烧的激光二极管和光脉冲发生方法
公开(公告)号：US08837537B2
公开(公告)日：2014-09-16
申请号：US13614748
申请日：2012-09-13
申请人： Young Ahn Leem
发明人： Young Ahn Leem
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/06258 , H01S5/06256 , H01S5/0657 , H01S5/1221
摘要： A high-efficiency laser diode is provided. Since a λ/4 phase-shifted distributed feedback (DFB) laser diode has a great coupling coefficient, mode stability is poor due to spatial hole burning when multiplication of the coupling coefficient by length of a resonator is equal to or greater than 2. In the inventive concept, a region capable of controlling spatial hole burning is inserted into a semiconductor laser diode structure. Thus, an ultrahigh-speed pulse laser diode having a repetition rate in the band ranging from 100 GHz to 300 GHz is obtained. In addition, a single-mode laser diode with improved energy use efficiency is implemented by changing the configuration of a laser diode.
摘要翻译：提供高效率的激光二极管。由于λ/ 4相移分布反馈（DFB）激光二极管具有很大的耦合系数，所以当谐振器的耦合系数乘以等于或大于2时，由于空间空穴燃烧，模式稳定性差。将本发明的概念，能够控制空穴燃烧的区域插入到半导体激光二极管结构中。因此，获得了在100GHz至300GHz范围内具有重复频率的超高速脉冲激光二极管。此外，通过改变激光二极管的配置来实现具有改善的能量利用效率的单模激光二极管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式