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31. 发明授权

US07751268B2 Sense amplifier power supply circuit 有权
标题翻译：感应放大器电源电路
公开(公告)号：US07751268B2
公开(公告)日：2010-07-06
申请号：US12070173
申请日：2008-02-14
申请人： Sang Il Park
发明人： Sang Il Park
IPC分类号： G11C7/00
CPC分类号： G11C5/147 , G11C7/08
摘要： A sense amplifier power supply circuit includes an overdriving unit configured to apply a first voltage to a sense amplifier in response to a first enable signal, a sense amplifier driving unit configured to apply a second voltage to the sense amplifier in response to a second enable signal, and a switching unit configured to selectively apply the first voltage or the second voltage to the sense amplifier in response to the first enable signal and the second enable signal.
摘要翻译：读出放大器电源电路包括：过驱动单元，被配置为响应于第一使能信号向读出放大器施加第一电压;读出放大器驱动单元，被配置为响应于第二使能信号向读出放大器施加第二电压以及开关单元，被配置为响应于所述第一使能信号和所述第二使能信号而选择性地将所述第一电压或所述第二电压施加到所述读出放大器。

32. 发明申请

US20100085817A1 Semiconductor memory device to reduce off-current in standby mode 有权
标题翻译：半导体存储器件在待机模式下减少截止电流
公开(公告)号：US20100085817A1
公开(公告)日：2010-04-08
申请号：US12319088
申请日：2008-12-31
申请人： Sang Il Park
发明人： Sang Il Park
IPC分类号： G11C7/00 , G11C8/08 , G11C8/00
CPC分类号： G11C8/14 , G11C5/147 , G11C7/22 , G11C2207/2227
摘要： A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals.
摘要翻译：提供能够在待机模式下减少截止电流的半导体存储器件。半导体存储器件包括：使能信号生成单元，被配置为接收多个地址解码信号，并产生第一使能信号以选择第一单元块和第二使能信号以选择第二单元块;以及内部电压产生单元，通过根据第一或第二使能信号控制第一电压的供应来产生内部电压。

33. 发明申请

US20090109777A1 Sense amplifier power supply circuit 有权
标题翻译：感应放大器电源电路
公开(公告)号：US20090109777A1
公开(公告)日：2009-04-30
申请号：US12070173
申请日：2008-02-14
申请人： Sang Il Park
发明人： Sang Il Park
IPC分类号： G11C7/06 , G11C5/14
CPC分类号： G11C5/147 , G11C7/08
摘要： A sense amplifier power supply circuit includes an overdriving unit configured to apply a first voltage to a sense amplifier in response to a first enable signal, a sense amplifier driving unit configured to apply a second voltage to the sense amplifier in response to a second enable signal, and a switching unit configured to selectively apply the first voltage or the second voltage to the sense amplifier in response to the first enable signal and the second enable signal.
摘要翻译：读出放大器电源电路包括：过驱动单元，被配置为响应于第一使能信号向读出放大器施加第一电压;读出放大器驱动单元，被配置为响应于第二使能信号向读出放大器施加第二电压以及开关单元，被配置为响应于所述第一使能信号和所述第二使能信号而选择性地将所述第一电压或所述第二电压施加到所述读出放大器。

34. 发明授权

US07488982B2 Thin film transistor and manufacturing method thereof, and active matrix display device and manufacturing method thereof 有权
公开(公告)号：US07488982B2
公开(公告)日：2009-02-10
申请号：US10068004
申请日：2002-02-08
申请人： Woo Young So , Kyung Jin Yoo , Sang Il Park
发明人： Woo Young So , Kyung Jin Yoo , Sang Il Park
IPC分类号： H01L29/04
CPC分类号： H01L29/66757 , H01L27/124 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/41733 , H01L29/458
摘要： A method of manufacturing a thin film transistor (TFT) which is manufactured such that source and drain electrodes directly contact source and drain regions without contact holes.

35. 外观设计

USD542748S1 TV receiver 有权
标题翻译：电视接收机
公开(公告)号：USD542748S1
公开(公告)日：2007-05-15
申请号：US29224043
申请日：2005-02-24
申请人： Kyoung Hoon Kim , Sang Il Park , Young Sun Shin , Baek Ki Kim
设计人： Kyoung Hoon Kim , Sang Il Park , Young Sun Shin , Baek Ki Kim

36. 发明授权

US07176493B2 Active matrix display device and manufacturing method thereof 有权
标题翻译：有源矩阵显示装置及其制造方法
公开(公告)号：US07176493B2
公开(公告)日：2007-02-13
申请号：US10736703
申请日：2003-12-17
申请人： Woo Young So , Kyung Jin Yoo , Sang Il Park
发明人： Woo Young So , Kyung Jin Yoo , Sang Il Park
IPC分类号： H01L21/84
CPC分类号： G02F1/136227 , H01L27/124 , H01L27/1244 , H01L27/1288 , H01L29/41733 , H01L29/458 , H01L29/66757
摘要： The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering the semiconductor layer; c) forming a gate electrode on the gate insulating layer over the semiconductor layer; d) forming spacers on both side wall portions of the gate electrode while exposing both end portions of the semiconductor layer; e) ion-implaing a high-density impurity into the semiconductor layer to form high-density source and drain regions in the semiconductor layer; f) depositing sequentially a transparent conductive layer and a metal layer on the inter insulating layer; g) patterning the transparent conductive layer and the metal layer to form the source and drain electrodes, the source and drain electrodes directly contacting the high-density source and drain regions and having a dual-layered structure; h) forming a passivation layer over the whole surface of the substrate; i) etching the passivation layer and the metal layer to form an opening portion exposing a portions of the transparent conductive layer, thereby forming a pixel electrode; and j) performing a reflow process to cover the metal layer in the opening portion by the passivation layer.
摘要翻译：本发明公开了一种制造有源矩阵显示装置的方法，包括：a）在绝缘基板上形成半导体层; b）在半导体层会聚的同时在衬底的整个表面上形成栅极绝缘层; c）在半导体层上的栅极绝缘层上形成栅电极; d）在露出半导体层的两个端部部分的同时，在栅电极的两个侧壁部分上形成间隔物; e）将高密度杂质离子注入到半导体层中以在半导体层中形成高密度源极和漏极区; f）在所述绝缘层上依次沉积透明导电层和金属层; g）图案化透明导电层和金属层以形成源极和漏极，源极和漏极直接接触高密度源极和漏极区并具有双层结构; h）在衬底的整个表面上形成钝化层; i）蚀刻钝化层和金属层以形成露出透明导电层的一部分的开口部分，从而形成像素电极; 和j）进行回流处理以通过钝化层覆盖开口部分中的金属层。

37. 发明授权

US09345300B2 Bag with anti-theft function cross reference to related application 有权
标题翻译：手提袋具有防盗功能，交叉参考相关应用
公开(公告)号：US09345300B2
公开(公告)日：2016-05-24
申请号：US14297560
申请日：2014-06-05
申请人： Sang Il Park
发明人： Sang Il Park
IPC分类号： G08B13/14 , A45C13/18
CPC分类号： A45C13/18 , A45C13/20 , E05B65/52 , E05B73/0005 , G08B13/14 , G08B13/149
摘要： Disclosed herein is a bag with an anti-theft function which is used to temporarily store various valuables (a wallet, a cellular phone, a camera, a watch, etc.) or clothes in a crowded place, for example, a water play area such as a beach or a water park, and is configured such that the stored valuables or the bag itself can be prevented from being stolen. The bag according to the present invention includes an anti-theft device which fastens first and second zippers that openably close an opening of the bag body to each other and binds the bag body to a surrounding structure, whereby valuables (a wallet, a cellular phone, a camera, a watch, etc.) stored in the bag body not only can be prevented from being stolen but the bag itself can also be prevented from being stolen because it is bound to the surrounding structure.
摘要翻译：本文公开了一种具有防盗功能的袋子，其用于临时存储各种贵重物品（钱包，手机，相机，手表等）或衣服在拥挤的地方，例如水上游乐区域例如海滩或水上公园，并且被配置为使得可以防止存储的贵重物品或袋本身被盗。根据本发明的袋子包括一个防盗装置，该防盗装置将第一和第二拉链紧固在一起，使第一和第二拉链可打开地将袋体的开口彼此靠近并将袋体绑在周围的结构上，由此贵重物品（钱包，蜂窝电话，相机，手表等）不仅可以防止被盗，而且还可以防止袋本身因为与周围结构的束缚而被盗。

38. 发明授权

US09137583B2 Method for securing indirect return channel and mobile digital broadcast receiver thereof 有权
标题翻译：用于确保间接返回信道的方法及其移动数字广播接收机
公开(公告)号：US09137583B2
公开(公告)日：2015-09-15
申请号：US13483814
申请日：2012-05-30
申请人： Sang Il Park , O Bong Kwon
发明人： Sang Il Park , O Bong Kwon
IPC分类号： H04B1/38 , H04N21/61 , H04N21/4782 , H04N21/236 , H04N21/235 , H04N21/435 , H04N7/173 , H04N21/6334
CPC分类号： H04N21/6175 , H04N7/17309 , H04N21/235 , H04N21/23614 , H04N21/41407 , H04N21/435 , H04N21/436 , H04N21/44227 , H04N21/4622 , H04N21/4782 , H04N21/485 , H04N21/6187 , H04N21/6334 , H04N21/6582
摘要： The present invention relates to a method for securing indirect return channel and mobile digital broadcast receiver, and more particularly, to a method for securing the indirect return channel for mobile digital broadcast receiver without internal Internet access capabilities by enabling indirect access to Internet using external Internet devices having internal Internet access capabilities, and a mobile digital broadcast receiver securing indirect return channel using external Internet devices with internal Internet access capabilities.
摘要翻译：本发明涉及一种用于确保间接返回信道和移动数字广播接收机的方法，更具体地，涉及一种用于通过使用外部互联网间接访问因特网来保护具有内部因特网接入能力的移动数字广播接收机的间接返回信道的方法具有内部互联网访问功能的设备，以及使用具有内部因特网接入能力的外部因特网设备来确保间接返回信道的移动数字广播接收机。

39. 发明授权

US08865489B2 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays 有权
标题翻译：用于可变形和半透明显示器的超薄，微米级无机发光二极管的印刷组件
公开(公告)号：US08865489B2
公开(公告)日：2014-10-21
申请号：US12778588
申请日：2010-05-12
申请人： John A. Rogers , Ralph Nuzzo , Hoon-sik Kim , Eric Brueckner , Sang Il Park , Rak Hwan Kim
发明人： John A. Rogers , Ralph Nuzzo , Hoon-sik Kim , Eric Brueckner , Sang Il Park , Rak Hwan Kim
IPC分类号： H01L31/0304 , H01L33/00 , H01L23/00 , H01L25/075 , H01L33/62
CPC分类号： H01L25/0753 , H01L21/6835 , H01L24/83 , H01L24/95 , H01L25/50 , H01L33/0079 , H01L33/32 , H01L33/486 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2221/68322 , H01L2221/6835 , H01L2221/68354 , H01L2221/68363 , H01L2221/68368 , H01L2221/68386 , H01L2224/8312 , H01L2224/83868 , H01L2224/83871 , H01L2224/83874 , H01L2224/95085 , H01L2924/01322 , H01L2924/05432 , H01L2924/06 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2933/0041 , H01L2933/005 , Y10S438/977 , H01L2924/00
摘要： Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.
摘要翻译：这里描述了用于制造，组装和布置电子设备的可打印结构和方法。本文描述的许多方法对于组装电子器件是有用的，其中一个或多个器件部件被嵌入在嵌入过程中被图案化的聚合物中，其中沟槽用于器件部件之间的电互连。本文描述的一些方法可用于通过印刷方法组装电子装置，例如通过干式转印接触印刷方法。本文还描述了GaN发光二极管以及用于制造和布置GaN发光二极管的方法，例如用于显示器或照明系统。

40. 发明授权

US08570821B2 Semiconductor memory device and method for repairing the same 有权
标题翻译：半导体存储器件及其修复方法
公开(公告)号：US08570821B2
公开(公告)日：2013-10-29
申请号：US13191625
申请日：2011-07-27
申请人： Sun Young Hwang , Sang Il Park
发明人： Sun Young Hwang , Sang Il Park
IPC分类号： G11C29/00
CPC分类号： G11C29/4401 , G11C29/789
摘要： A semiconductor memory device includes a latch address generation unit configured to latch row addresses to generate first and second latch addresses when at least one of memory cells coupled to sub word lines is faulty, wherein the first and second latch addresses select different main word lines, and a repair unit configured to perform a repair operation on memory cells coupled to the main word lines selected by the first and second latch addresses.
摘要翻译：半导体存储器件包括锁存地址生成单元，其被配置为当耦合到子字线的存储器单元中的至少一个有故障时，锁存行地址以产生第一和第二锁存器地址，其中第一和第二锁存器地址选择不同的主字线，以及修复单元，被配置为对与由第一和第二锁存器地址选择的主字线耦合的存储器单元执行修复操作。

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