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31. 发明授权

US06630746B1 Semiconductor device and method of making the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06630746B1
公开(公告)日：2003-10-07
申请号：US09566961
申请日：2000-05-09
申请人： David P. Mancini , Douglas J. Resnick , Harland G. Tompkins , Karen E. Moore
发明人： David P. Mancini , Douglas J. Resnick , Harland G. Tompkins , Karen E. Moore
IPC分类号： H01L2348
CPC分类号： G03F9/7076 , G03F9/7069 , H01L2223/54426
摘要： An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.
摘要翻译：在碳化硅衬底（50）的表面（64）上形成对准标记（51）。对准标记（51）用于反射光信号（72）以确定碳化硅衬底（50）的适当位置。用于形成对准标记（51）的材料可以用于在任何透明或半透明基材上形成对准标记，并且将通过非常高的温度处理步骤来保持物理完整性。

32. 发明授权

US5509041A X-ray lithography method for irradiating an object to form a pattern thereon 失效
标题翻译：用于照射物体以在其上形成图案的X射线光刻方法
公开(公告)号：US5509041A
公开(公告)日：1996-04-16
申请号：US269866
申请日：1994-06-30
申请人： Douglas J. Resnick , William A. Johnson , Hector T. H. Chen
发明人： Douglas J. Resnick , William A. Johnson , Hector T. H. Chen
IPC分类号： H01L21/027 , G03F1/22 , G03F7/20 , G21K5/00
CPC分类号： G03F1/22 , G03F7/2039 , G03F7/70058 , G03F7/70866
摘要： An x-ray lithography method for irradiating an object (14) to form a pattern thereon uses an x-ray mask (10) having a membrane (18). The membrane (18) has an open membrane surface (26), and x-ray radiation (16) is passed through the open membrane surface (26) to irradiate the object (14). During this irradiation, the open membrane surface (26) is substantially uniformly exposed to the x-ray radiation (16) so that stress-induced distortion of the membrane (18) is reduced.
摘要翻译：用于照射物体（14）以在其上形成图案的X射线光刻方法使用具有膜（18）的X射线掩模（10）。膜（18）具有开放的膜表面（26），并且x射线辐射（16）通过开放膜表面（26）以照射物体（14）。在该照射期间，开放膜表面（26）基本均匀地暴露于x射线辐射（16），使得膜（18）的应力引起的变形减小。

33. 发明授权

US08877073B2 Imprint lithography template 有权
标题翻译：印刷光刻模板
公开(公告)号：US08877073B2
公开(公告)日：2014-11-04
申请号：US12604866
申请日：2009-10-23
申请人： Gerard M. Schmid , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu
发明人： Gerard M. Schmid , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu
IPC分类号： C25F3/00 , B82Y10/00 , B82Y40/00 , G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0017 , Y10T156/10
摘要： Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template.
摘要翻译：描述了用于从多层基板形成压印光刻模板的系统，方法和工艺。多层基材可以包括位于基材层上的嵌段共聚物层。嵌段共聚物层可以包括两个或更多个结构域。至少一个结构域可能具有与另一个结构域不同的组成敏感性，使得这些结构域对特定过程具有不同的反应。结构域与特定方法的反应可以提供嵌段共聚物层中的图案。该图案可以被转移到基底层中以形成压印光刻模板。

34. 发明授权

US08512585B2 Template pillar formation 有权
标题翻译：模板柱形成
公开(公告)号：US08512585B2
公开(公告)日：2013-08-20
申请号：US13352824
申请日：2012-01-18
申请人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
发明人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
IPC分类号： C23F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/26
摘要： Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.
摘要翻译：提供了形成压印光刻模板的方法。可以基于层的物理性质以不同的速率蚀刻用于形成压印光刻模板的材料。此外，可以监测材料的反射率以提供材料的基本均匀的侵蚀。

35. 发明授权

US07985530B2 Etch-enhanced technique for lift-off patterning 有权
标题翻译：用于剥离图案的蚀刻增强技术
公开(公告)号：US07985530B2
公开(公告)日：2011-07-26
申请号：US11856862
申请日：2007-09-18
申请人： Gerard M. Schmid , Douglas J. Resnick
发明人： Gerard M. Schmid , Douglas J. Resnick
IPC分类号： G03F7/26
CPC分类号： H01L21/0272 , B82Y10/00 , B82Y40/00 , G03F7/00 , G03F7/0002
摘要： An enhanced process forming a material pattern on a substrate deposits the material anisotropically on resist material patterned to correspond to an image of the material pattern. The material is etched isotropically to remove a thickness of the material on sidewalls of the resist pattern while leaving the material on a top surface of the resist pattern and portions of the surface of the substrate. The resist pattern is removed by dissolution thereby lifting-off the material on the top surface of the resist pattern while leaving the material on the substrate surface as the material pattern. Alternately, a first material layer is deposited on the resist pattern and a second material layer is deposited and planarized. The second material layer is etched exposing the first material while leaving the second material in features of the resist pattern. The first material and the resist are removed leaving the first material pattern.
摘要翻译：在衬底上形成材料图案的增强工艺在各向异性上沉积材料，其图案化的抗蚀剂材料对应于材料图案的图像。将材料各向同性地蚀刻以除去抗蚀剂图案的侧壁上的材料的厚度，同时将材料留在抗蚀剂图案的顶表面和基板的表面的部分。通过溶解除去抗蚀剂图案，从而使抗蚀剂图案的顶表面上的材料脱离，同时将材料留在基材表面上作为材料图案。或者，第一材料层沉积在抗蚀剂图案上，并且第二材料层被沉积并平坦化。蚀刻第二材料层暴露第一材料，同时将第二材料留在抗蚀剂图案的特征中。去除第一材料和抗蚀剂留下第一材料图案。

36. 发明申请

US20110171340A1 Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template 有权
标题翻译：具有不同厚度的模板以便于排出位于基板和模板之间的气体
公开(公告)号：US20110171340A1
公开(公告)日：2011-07-14
申请号：US13073533
申请日：2011-03-28
申请人： Douglas J. Resnick , Mario J. Meissl , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Douglas J. Resnick , Mario J. Meissl , Byung-Jin Choi , Sidlgata V. Sreenivasan
IPC分类号： B29C59/02
CPC分类号： H01L21/67126 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/6715
摘要： A nanoimprint lithography template including, inter alia, a body having first and second opposed sides with a first surface disposed on the first side, the second side having a recess disposed therein, the body having first and second regions with the second region surrounding the first region and the recess in superimposition with the first region, with a portion of the first surface in superimposition with the first region being spaced-apart from the second side a first distance and a portion of the first surface in superimposition with the second region being spaced-apart from the second side a second distance, with the second distance being greater than the first distance; and a mold disposed on the first side of the body in superimposition a portion of the first region.
摘要翻译：一种纳米压印光刻模板，其特别包括具有第一和第二相对侧的主体，第一表面设置在第一侧上，第二侧具有设置在其中的凹部，该主体具有第一和第二区域，第二区域围绕第一所述凹部与所述第一区域叠加，所述第一表面的与所述第一区域重叠的部分与所述第二侧面间隔开第一距离，并且所述第一表面的与所述第二区域重叠的部分间隔开从第二侧排出第二距离，第二距离大于第一距离; 以及模具，其设置在所述主体的第一侧上，以叠加所述第一区域的一部分。

37. 发明授权

US07874831B2 Template having a silicon nitride, silicon carbide or silicon oxynitride film 有权
标题翻译：具有氮化硅，碳化硅或氮氧化硅膜的模板
公开(公告)号：US07874831B2
公开(公告)日：2011-01-25
申请号：US12605848
申请日：2009-10-26
申请人： Douglas J. Resnick , Mario Johannes Meissl , Kosta S. Selinidis , Frank Y. Xu
发明人： Douglas J. Resnick , Mario Johannes Meissl , Kosta S. Selinidis , Frank Y. Xu
IPC分类号： B29C59/00 , B29C33/56
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography template including, inter alia, a body having a first thickness associated therewith; a patterning layer, having a second thickness associated therewith, comprising a plurality of features, having a third thickness associated therewith.
摘要翻译：压印光刻模板，其特别包括具有与其相关联的第一厚度的主体; 具有与其相关联的第二厚度的图案化层，包括具有与其相关联的第三厚度的多个特征。

38. 发明申请

US20100040718A1 Template Having a Silicon Nitride, Silicon Carbide or Silicon Oxynitride Film 有权
标题翻译：具有氮化硅，碳化硅或氮氧化硅膜的模板
公开(公告)号：US20100040718A1
公开(公告)日：2010-02-18
申请号：US12605848
申请日：2009-10-26
申请人： Douglas J. Resnick , Mario J. Meissl , Kosta S. Selinidis , Frank Y. Xu
发明人： Douglas J. Resnick , Mario J. Meissl , Kosta S. Selinidis , Frank Y. Xu
IPC分类号： G03F1/06
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography template including, inter alia, a body having a first thickness associated therewith; a patterning layer, having a second thickness associated therewith, comprising a plurality of features, having a third thickness associated therewith.
摘要翻译：压印光刻模板，其特别包括具有与其相关联的第一厚度的主体; 具有与其相关联的第二厚度的图案化层，包括具有与其相关联的第三厚度的多个特征。

39. 发明申请

US20090130598A1 Method of Creating a Template Employing a Lift-Off Process 有权
标题翻译：创建使用脱离过程的模板的方法
公开(公告)号：US20090130598A1
公开(公告)日：2009-05-21
申请号：US11943907
申请日：2007-11-21
申请人： Gerard M. Schmid , Douglas J. Resnick , Michael N. Miller
发明人： Gerard M. Schmid , Douglas J. Resnick , Michael N. Miller
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask.
摘要翻译：一种形成光刻模板的方法，所述方法尤其包括通过在主体上形成导电层并在导电层上形成具有突起和凹陷的图案层，形成多层结构，所述凹陷暴露导电层的部分; 在覆盖图案层的顶表面和导电层的部分的多层结构上各向异性地沉积硬掩模材料; 通过剥离过程去除图案层，硬掩模材料残留在导电层的部分上; 将抗蚀剂图案定位在所述多层结构上以限定所述多层结构的区域; 并且使用硬掩模材料作为蚀刻掩模选择性地去除与该区域重叠的多层结构的部分。

40. 发明申请

US20080160129A1 Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template 审中-公开
标题翻译：具有不同厚度的模板以便于排出位于基板和模板之间的气体
公开(公告)号：US20080160129A1
公开(公告)日：2008-07-03
申请号：US11744698
申请日：2007-05-04
申请人： Douglas J. Resnick , Mario J. Meissl , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Douglas J. Resnick , Mario J. Meissl , Byung-Jin Choi , Sidlgata V. Sreenivasan
IPC分类号： B29C59/02
CPC分类号： H01L21/67126 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/6715
摘要： A nanoimprint lithography template including, inter alia, a body having first and second opposed sides with a first surface disposed on the first side, the second side having a recess disposed therein, the body having first and second regions with the second region surrounding the first region and the recess in superimposition with the first region, with a portion of the first surface in superimposition with the first region being spaced-apart from the second side a first distance and a portion of the first surface in superimposition with the second region being spaced-apart from the second side a second distance, with the second distance being greater than the first distance; and a mold disposed on the first side of the body in superimposition a portion of the first region.
摘要翻译：一种纳米压印光刻模板，其特别包括具有第一和第二相对侧的主体，第一表面设置在第一侧上，第二侧具有设置在其中的凹部，该主体具有第一和第二区域，第二区域围绕第一所述凹部与所述第一区域叠加，所述第一表面的与所述第一区域重叠的部分与所述第二侧面间隔开第一距离，并且所述第一表面的与所述第二区域重叠的部分间隔开从第二侧排出第二距离，第二距离大于第一距离; 以及模具，其设置在所述主体的第一侧上，以叠加所述第一区域的一部分。

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