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31. 发明申请

US20070042581A1 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20070042581A1
公开(公告)日：2007-02-22
申请号：US10574571
申请日：2005-01-21
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
IPC分类号： H01L21/24
CPC分类号： H01L21/02148 , C23C16/34 , C23C16/45529 , C23C16/45531 , H01L21/02271 , H01L21/02337 , H01L21/31645 , H01L21/3185
摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.
摘要翻译：提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二形成薄膜步骤的阶段。

32. 发明申请

US20060240677A1 Method for manufacturing semiconductor device and substrate processing apparatus 审中-公开
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US20060240677A1
公开(公告)日：2006-10-26
申请号：US10528450
申请日：2003-09-19
申请人： Sadayoshi Horii , Hironobu Miya , Yoshiaki Hashiba
发明人： Sadayoshi Horii , Hironobu Miya , Yoshiaki Hashiba
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/6715
摘要： An oxidizer supply device (30) comprises an ozonizer (31) for generating ozone (32), a bubbler (34) wherein deionized water (35) is kept and an ozone supply pipe (33) for supplying ozone (32) from the ozonizer (31) is immersed in the deionized water (35) so as to bubble ozone, and a supply pipe (36) for supplying oxidizer (37) containing OH* generated by bubbling of the ozone (32). The device (30) is connected to a feed pipe (18) of an oxide film forming device (10). The oxidizer containing OH* generated by bubbling ozone in the water possesses a powerful oxidizing effect so oxide film can be formed on the wafer at a relatively low temperature in a short time. Semiconductor devices or circuit patterns previously formed on the wafer can be prevented from being damaged by plasma since no plasma is used. The throughput, performance and reliability of the oxide film forming device are therefore improved.
摘要翻译：氧化剂供给装置（30）包括用于产生臭氧的臭氧发生器（31），保持去离子水（35）的起泡器（34）和用于从臭氧发生器（32）供应臭氧的臭氧供应管（33）（31）浸入去离子水（35）中以使臭氧气泡;以及供给管（36），用于供给氧化剂（37），该氧化剂含有通过臭氧（32）的鼓泡产生的OH *。装置（30）连接到氧化膜形成装置（10）的进料管（18）。通过在水中产生臭氧而产生的含有OH *的氧化剂具有强大的氧化效果，因此可以在短时间内以较低的温度在晶片上形成氧化膜。预先形成在晶片上的半导体器件或电路图案可以防止被等离子体损坏，因为不使用等离子体。因此，氧化膜形成装置的生产量，性能和可靠性得到改善。

33. 发明申请

US20060035470A1 Method for manufaturing semiconductor device and substrate processing system 审中-公开
标题翻译：半导体器件和基板处理系统的制造方法
公开(公告)号：US20060035470A1
公开(公告)日：2006-02-16
申请号：US10529466
申请日：2003-10-24
申请人： Sadayoshi Horii , Hironobu Miya
发明人： Sadayoshi Horii , Hironobu Miya
IPC分类号： H01L21/469 , C23C16/00
CPC分类号： C23C16/45527 , C23C16/405 , C23C16/4486
摘要： To improve throughput of a substrate processing without wastefully using a source as a reactant by repeating supply steps of a plurality of reactants for a plurality of times. A substrate processing apparatus includes a source gas obtained by vaporizing a liquid source as a reactant, and functions to process a substrate by repeating the supply of the source gas into a processing chamber 1, and the supply of the reactant different from the source gas into the processing chamber 1, which is executed subsequently, for a plurality of times. A flow rate of the liquid source is controlled by an injection drive control mechanism 6. The injection drive control mechanism 6 is designed to fix the flow rate per one injecting operation of the liquid source directly flowing into a vaporization section in a vaporizer 3, and intermittently inject the liquid source to a vaporization section 31.
摘要翻译：通过重复多次反应物的供给步骤，可以不浪费地使用源作为反应物来提高基板处理的生产量。基板处理装置包括通过蒸发作为反应物的液体源而获得的源气体，并且通过重复将源气体供应到处理室1中并且将不同于源气体的反应物供应到基板的处理处理室1，其随后被执行多次。液体源的流量由喷射驱动控制机构6控制。喷射驱动控制机构6被设计成将直接流入蒸发器3的蒸发部的液体源的每次喷射动作的流量固定，并将液体源间歇地喷射到汽化部31。

34. 发明申请

US20050250341A1 Method for manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US20050250341A1
公开(公告)日：2005-11-10
申请号：US10521248
申请日：2003-07-15
申请人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
发明人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
IPC分类号： C23C16/44 , C23C16/455 , H01L21/02 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45542 , C23C16/0272 , H01L28/55 , H01L28/60 , H01L28/90
摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.
摘要翻译：以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。通过初始成膜步骤的一个步骤可以获得所需的厚度。然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体不使用热CVD法等离子体激发。

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