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    • 37. 发明授权
    • Bipolar transistor with floating guard region under extrinsic base
    • 双极晶体管,外部基极具有浮动保护区域
    • US5221856A
    • 1993-06-22
    • US833599
    • 1992-02-10
    • Ronald DekkerMartinus C. A. M. KoolenHenricus G. R. Maas
    • Ronald DekkerMartinus C. A. M. KoolenHenricus G. R. Maas
    • H01L21/225H01L21/285H01L21/32H01L21/3213H01L21/3215H01L21/331H01L21/60H01L29/732
    • H01L21/76897H01L21/2257H01L21/28506H01L21/28525H01L21/32H01L21/32134H01L21/32155H01L29/66242H01L29/66272H01L29/7325
    • A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major surface (1a) by a relatively lowly doped subsidiary region (12). A second device region (20) of the opposite conductivity type within the subsidiary region (12) has an intrinsic subsidiary region (21) and an extrinsic subsidiary region (23,24) surrounding the intrinsic subsidiary region (21) forming respective first and second pn junctions (22,25) with the relatively lowly doped subsidiary region (12). A third device region (30) of the one conductivity type is formed within the intrinsic subsidiary region (21) surface (1a). An additional region (60,60',61,62) is provided beneath the extrinsic subsidiary region (23,24) so as to lie within the spread of the depletion region (250) associated with the second pn junction (25) when the first and second pn junction (22,25) are reverse-biassed thereby extending the depletion region (250) beneath the emitter region (30) to cause an increase in the Early voltage (V.sub.eaf) of the device.
    • 与半导体本体(1)的一个主表面(1a)相邻的一种导电类型的第一器件区域(10)具有相对高度掺杂的辅助区域(11),该区域通过相对低掺杂的子元件与一个主表面(1a)间隔开 区域(12)。 在辅助区域(12)内具有相反导电类型的第二设备区域(20)具有内部辅助区域(21)和围绕内部辅助区域(21)的外在辅助区域(23,24),形成相应的第一和第二 pn结(22,25)与相对低掺杂的辅助区域(12)。 一个导电类型的第三器件区域(30)形成在本征辅助区域(21)表面(1a)内。 在外部辅助区域(23,24)的下方提供附加区域(60,60',61,62),以便当位于与第二pn结(25)相关联的耗尽区域(250)的扩展区内时 第一和第二pn结(22,25)被反向偏压,从而将耗尽区(250)延伸到发射极区(30)之下,以引起器件的早期电压(Veaf)的增加。