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31. 发明授权

US07937153B2 Electrode with increased stability and method of manufacturing the same 有权
标题翻译：增加稳定性的电极及其制造方法
公开(公告)号：US07937153B2
公开(公告)日：2011-05-03
申请号：US11820744
申请日：2007-06-19
申请人： Dao Min Zhou , Jerry Ok , Neil Hamilton Talbot , Brian V. Mech , James Singleton Little , Robert J. Greenberg
发明人： Dao Min Zhou , Jerry Ok , Neil Hamilton Talbot , Brian V. Mech , James Singleton Little , Robert J. Greenberg
IPC分类号： A61N1/00
CPC分类号： A61N1/0543 , A61N1/36046
摘要： An implantable electrode with increased stability having a clustered structure wherein the surface of the electrode is covered with a material comprising openings which are filled with sticks or posts. An implantable electrode with increased stability wherein the surface is of the electrode comprises mesh grids which are filled with sticks which are filed with a conducting or insulating material. A method of manufacturing an electrode with increased stability, comprising: depositing a metal layer on an base layer; applying photoresist layer on the metal layer; patterning the photoresist layer providing openings; electroplating the openings with metal; removing the photoresist layer leaving spaces; and filling the spaces with polymer. A method of manufacturing an electrode with increased stability, comprising: depositing a metal layer on an base layer; applying a polymer layer on the metal layer; applying photoresist layer on the polymer layer; patterning the photoresist layer providing openings; electroplating the openings with metal; and removing the photoresist layer.
摘要翻译：具有增加的稳定性的可植入电极具有聚集结构，其中电极的表面被包括充满棒或柱的开口的材料覆盖。具有增加的稳定性的可植入电极，其中电极的表面包括填充有用导电或绝缘材料填充的棒的网状网格。一种制造具有增加的稳定性的电极的方法，包括：在基底层上沉积金属层; 在金属层上施加光致抗蚀剂层; 图案化提供开口的光致抗蚀剂层; 用金属电镀开口; 去除留下空间的光致抗蚀剂层; 并用聚合物填充空间。一种制造具有增加的稳定性的电极的方法，包括：在基底层上沉积金属层; 在金属层上施加聚合物层; 在聚合物层上施加光致抗蚀剂层; 图案化提供开口的光致抗蚀剂层; 用金属电镀开口; 并除去光致抗蚀剂层。

32. 发明申请

US20080268134A1 ELECTRODE WITH INCREASED STABILITY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有增加的稳定性的电极及其制造方法
公开(公告)号：US20080268134A1
公开(公告)日：2008-10-30
申请号：US11924763
申请日：2007-10-26
申请人： Dao Min Zhou , Jerry Ok , Neil Hamilton Talbot , Brian V. Mech , James Singleton Little , Robert J. Greenberg
发明人： Dao Min Zhou , Jerry Ok , Neil Hamilton Talbot , Brian V. Mech , James Singleton Little , Robert J. Greenberg
IPC分类号： H01M4/04
CPC分类号： A61N1/0543 , A61N1/36046
摘要： The present invention provides an implantable electrode with increased stability having a clustered structure wherein the surface of the electrode is covered with a material comprising openings which are filled with sticks or posts.The present invention provides an implantable electrode with increased stability wherein the surface is of the electrode comprises mesh grids which are filled with sticks which are filed with a conducting or insulating material.The present invention provides a method of manufacturing an electrode with increased stability, comprising: depositing a metal layer on an base layer; applying photoresist layer on the metal layer; patterning the photoresist layer providing openings; electroplating the openings with metal; removing the photoresist layer leaving spaces; and filling the spaces with polymer.The present invention provides A method of manufacturing an electrode with increased stability, comprising: depositing a metal layer on an base layer; applying a polymer layer on the metal layer; applying photoresist layer on the polymer layer; patterning the photoresist layer providing openings; electroplating the openings with metal; and removing the photoresist layer.
摘要翻译：本发明提供具有增加的稳定性的可植入电极，其具有聚集结构，其中电极的表面被包括填充有棒或柱的开口的材料覆盖。本发明提供了具有增加的稳定性的可植入电极，其中电极的表面包括填充有用导电或绝缘材料填充的棒的网状网格。本发明提供一种具有增加的稳定性的电极的制造方法，包括：在基底层上沉积金属层; 在金属层上施加光致抗蚀剂层; 图案化提供开口的光致抗蚀剂层; 用金属电镀开口; 去除留下空间的光致抗蚀剂层; 并用聚合物填充空间。本发明提供了一种制造具有增加的稳定性的电极的方法，包括：在基底层上沉积金属层; 在金属层上施加聚合物层; 在聚合物层上施加光致抗蚀剂层; 图案化提供开口的光致抗蚀剂层; 用金属电镀开口; 并除去光致抗蚀剂层。

33. 发明授权

US08501547B2 Implantable microelectronic device and method of manufacture 有权
标题翻译：植入式微电子器件及其制造方法
公开(公告)号：US08501547B2
公开(公告)日：2013-08-06
申请号：US13567366
申请日：2012-08-06
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L21/56
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译：公开了可植入气密微电子器件及其制造方法。本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔层。在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触，装置。优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。

34. 发明授权

US08322027B1 Flexible circuit electrode array and method of manufacturing the same 有权
标题翻译：柔性电路电极阵列及其制造方法
公开(公告)号：US08322027B1
公开(公告)日：2012-12-04
申请号：US11926498
申请日：2007-10-29
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok
IPC分类号： H05K3/00 , H05K3/10 , H05K1/00
CPC分类号： H05K3/06 , A61N1/0543 , H05K1/118 , H05K3/0041 , H05K3/28 , H05K3/381 , H05K3/388 , H05K2201/0154 , H05K2201/0317 , H05K2203/0554 , H05K2203/0789 , H05K2203/0793 , H05K2203/095 , H05K2203/1163 , Y10T29/49124 , Y10T29/49147 , Y10T29/49155
摘要： A method for manufacturing a flexible circuit electrode array, comprising: a) depositing a metal trace layer containing a base coating layer, a conducting layer and a top coating layer on said insulator polymer base layer; b) applying a layer of photoresist on said metal trace layer and patterning said metal trace layer and forming metal traces on said insulator polymer base layer; c) activating said insulator polymer base layer and depositing a top insulator polymer layer and forming one single insulating polymer layer with said base insulator polymer layer; d) applying a thin metal layer and a layer of photoresist on the surface of said insulator polymer layer and selective etching said insulator layer and said top coating layer to obtain at least one via; and e) filling said via with electrode material. A layer of polymer is laid down. A layer of metal is applied to the polymer and patterned to create electrodes and leads for those electrodes. A second layer of polymer is applied over the metal layer and patterned to leave openings for the electrodes, or openings are created later by means such as laser ablation. Hence the array and its supply cable are formed of a single body. Alternatively, multiple alternating layers of metal and polymer may be applied to obtain more metal traces within a given width.The method provides an excellent adhesion between the polymer base layer and the polymer top layer and insulation of the trace metals and electrodes.
摘要翻译：一种制造柔性电路电极阵列的方法，包括：a）在所述绝缘体聚合物基底层上沉积包含基底涂层，导电层和顶部涂层的金属迹线层; b）在所述金属迹线层上施加一层光致抗蚀剂，并图案化所述金属迹线层并在所述绝缘体聚合物基底层上形成金属迹线; c）激活所述绝缘体聚合物基层并沉积顶部绝缘体聚合物层并与所述基础绝缘体聚合物层形成单个绝缘聚合物层; d）在所述绝缘体聚合物层的表面上施加薄金属层和光致抗蚀剂层，并选择性地蚀刻所述绝缘体层和所述顶部涂层以获得至少一个通孔; 和e）用电极材料填充所述通孔。放置一层聚合物。将一层金属施加到聚合物上并图案化以产生用于那些电极的电极和引线。将第二层聚合物施加在金属层上并图案化以留下电极的开口，或稍后通过诸如激光烧蚀的手段产生开口。因此阵列及其供电电缆由单体形成。或者，可以施加金属和聚合物的多个交替层以在给定宽度内获得更多的金属迹线。该方法提供了聚合物基底层和聚合物顶层之间的极好的粘合性，并且痕迹金属和电极的绝缘性。

35. 发明授权

US07877866B1 Flexible circuit electrode array and method of manufacturing the same 有权
标题翻译：柔性电路电极阵列及其制造方法
公开(公告)号：US07877866B1
公开(公告)日：2011-02-01
申请号：US11545354
申请日：2006-10-10
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok
IPC分类号： H05K3/00 , H05K3/10 , H01R9/00
CPC分类号： H05K3/06 , A61N1/0543 , H05K1/118 , H05K3/0041 , H05K3/28 , H05K3/381 , H05K3/388 , H05K2201/0154 , H05K2201/0317 , H05K2203/0554 , H05K2203/0789 , H05K2203/0793 , H05K2203/095 , H05K2203/1163 , Y10T29/49124 , Y10T29/49147 , Y10T29/49155
摘要： A method of manufacturing a flexible circuit electrode array that provides excellent adhesion between the polymer base layer and the polymer top layer and insulation of the trace metals and electrodes. A layer of polymer is laid down. A layer of metal is applied to the polymer and patterned to create electrodes and leads for those electrodes. A second layer of polymer is applied over the metal layer and patterned to leave openings for the electrodes, or openings are created later by means such as laser ablation. Hence the array and its supply cable are formed of a single body. Alternatively, multiple alternating layers of metal and polymer may be applied to obtain more metal traces within a given width.
摘要翻译：一种制造柔性电路电极阵列的方法，其提供聚合物基层和聚合物顶层之间的优异粘附性以及痕量金属和电极的绝缘。放置一层聚合物。将一层金属施加到聚合物上并图案化以产生用于那些电极的电极和引线。将第二层聚合物施加在金属层上并图案化以留下电极的开口，或稍后通过诸如激光烧蚀的手段产生开口。因此阵列及其供电电缆由单体形成。或者，可以施加金属和聚合物的多个交替层以在给定宽度内获得更多的金属迹线。

36. 发明授权

US07709961B2 Implantable microelectronic device and method of manufacture 有权
标题翻译：植入式微电子器件及其制造方法
公开(公告)号：US07709961B2
公开(公告)日：2010-05-04
申请号：US11924486
申请日：2007-10-25
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L29/40
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译：公开了可植入气密微电子器件及其制造方法。本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔层。在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触，装置。优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。

37. 发明申请

US20120309134A1 Implantable Microelectronic Device and Method of Manufacture 有权
标题翻译：可植入微电子器件及其制造方法
公开(公告)号：US20120309134A1
公开(公告)日：2012-12-06
申请号：US13567366
申请日：2012-08-06
申请人： Robert J Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L21/56
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译：公开了可植入气密微电子器件及其制造方法。本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（IBAD）形成的氧化铝之类的绝缘体中，并且具有从器件上的接触焊盘延伸到密封层中的孔的生物相容性导电层的堆叠。在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触，装置。优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。

38. 发明授权

US08258635B2 Implantable microelectronic device and method of manufacture 有权
标题翻译：植入式微电子器件及其制造方法
公开(公告)号：US08258635B2
公开(公告)日：2012-09-04
申请号：US12726274
申请日：2010-03-17
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L23/29
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译：公开了可植入气密微电子器件及其制造方法。本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔层。在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触，装置。优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。

39. 发明授权

US08532776B2 Package for an implantable neural stimulation device 有权
公开(公告)号：US08532776B2
公开(公告)日：2013-09-10
申请号：US11924469
申请日：2007-10-25
申请人： Robert J Greenberg , Jerry Ok , Jordan Matthew Neysmith , Kevin Wilkin , Neil Hamilton Talbot , Da-Yu Chang
发明人： Robert J Greenberg , Jerry Ok , Jordan Matthew Neysmith , Kevin Wilkin , Neil Hamilton Talbot , Da-Yu Chang
IPC分类号： A61N1/375
CPC分类号： A61N1/36046 , A61N1/0543 , A61N1/375 , A61N1/3758 , A61N1/3787 , H01L2224/16227 , H01L2224/32225 , H01L2224/73253 , H01L2924/15311 , H01L2924/16251 , H01L2924/19104 , H01L2924/19107
摘要： The present invention is an improved hermetic package for implantation in the human body. The implantable device of the present invention includes an eclectically non-conductive bass including electrically conductive vias through the substrate. A circuit is flip-chip bonded to a subset of the vias. A second circuit is wire bonded to another subset of the vias. Finally, a cover is bonded to the substrate such that the cover, substrate and vias form a hermetic package.

40. 发明申请

US20100197082A1 Implantable Microelectronic Device and Method of Manufacture 有权
标题翻译：可植入微电子器件及其制造方法
公开(公告)号：US20100197082A1
公开(公告)日：2010-08-05
申请号：US12726274
申请日：2010-03-17
申请人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
发明人： Robert J. Greenberg , Neil Hamilton Talbot , Jordan Matthew Neysmith , Jerry Ok , Honggang Jiang
IPC分类号： H01L21/56
CPC分类号： A61N1/375 , A61N1/3754 , H01L23/291 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/85 , H01L2224/0345 , H01L2224/0347 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13164 , H01L2224/13169 , H01L2224/85 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/351 , H01L2924/04953 , H01L2924/00 , H01L2224/48 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder.
摘要翻译：公开了可植入气密微电子器件及其制造方法。本发明的微电子器件气密地封装在诸如由离子豆辅助沉积（“IBAD”）形成的氧化铝之类的绝缘体中，一堆生物相容的导电层从器件上的接触垫延伸到密封的孔层。在优选实施例中，在器件接触焊盘上形成一个或多个图案化的钛层，并且在钛层上形成一个或多个铂层，使得上铂层的顶表面限定外部的生物相容的电接触，装置。优选地，底部导电层大于器件上的接触焊盘，并且堆叠中的层限定了肩部。

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