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    • 32. 发明授权
    • System for search and analysis of systematic defects in integrated circuits
    • 集成电路系统缺陷的搜索和分析系统
    • US07552417B2
    • 2009-06-23
    • US12132710
    • 2008-06-04
    • Bette L. Bergman ReuterDavid L. DeMarisMark A. LavinWilliam C. LeipoldDaniel N. MaynardMaharaj Mukherjee
    • Bette L. Bergman ReuterDavid L. DeMarisMark A. LavinWilliam C. LeipoldDaniel N. MaynardMaharaj Mukherjee
    • G06F17/50
    • G06T7/001G06T2207/30148
    • Disclosed is a method of locating systematic defects in integrated circuits. The invention first performs a preliminary extracting and index processing of the circuit design and then performs feature searching. When performing the preliminary extracting and index processing the invention establishes a window grid for the circuit design and merges basis patterns with shapes in the circuit design within each window of the window grid. The invention transforms shapes in a each window into feature vectors by finding intersections between the basis patterns and the shapes in the windows. Then, the invention clusters the feature vectors to produce an index of feature vectors. After performing the extracting and index processing, the invention performs the process of feature searching by first identifying a defect region window of the circuit layout and similarly merging basis patterns with shapes in the defect region window. This merging process can include rotating and mirroring the shapes in the defect region. The invention similarly transforms shapes in the defect region window into defect vectors by finding intersections between basis patterns and the shapes in the defect region. Then, the invention can easily find feature vectors that are similar to the defect vector using, for example, representative feature vectors from the index of feature vectors. Then, the similarities and differences between the defect vectors and the feature vectors can be analyzed.
    • 公开了一种定位集成电路系统缺陷的方法。 本发明首先进行电路设计的初步提取和索引处理,然后执行特征搜索。 当执行初步提取和索引处理时,本发明建立了用于电路设计的窗口网格,并且将窗体网格的每个窗口内的电路设计中的形状与基本图案合并。 本发明通过在窗口中找到基本图案和形状之间的交点来将每个窗口中的形状转换为特征向量。 然后,本发明聚集特征向量以产生特征向量的索引。 在执行提取和索引处理之后,本发明通过首先识别电路布局的缺陷区域窗口并且将基本模式与缺陷区域窗口中的形状类似地合并来执行特征搜索的处理。 该合并过程可以包括旋转和镜像缺陷区域中的形状。 本发明类似地通过在缺陷区域中找到基础图案和形状之间的交点来将缺陷区域窗口中的形状转换为缺陷向量。 然后,本发明可以使用例如来自特征向量的索引的代表性特征向量容易地找到与缺陷向量相似的特征向量。 然后,可以分析缺陷向量和特征向量之间的相似性和差异。
    • 33. 发明授权
    • IC design modeling allowing dimension-dependent rule checking
    • IC设计建模允许维度依赖的规则检查
    • US07404164B2
    • 2008-07-22
    • US10708039
    • 2004-02-04
    • Evanthia PapadopoulouDaniel N. Maynard
    • Evanthia PapadopoulouDaniel N. Maynard
    • G06F17/50
    • G06F17/5081
    • A method, system and program product to model an IC design to include dimensions such as a local width and spacing of IC shapes in a consistent fashion. In particular, the invention uses a core portion of Voronoi diagrams to partition edges of a shape into intervals and assigns at least one dimension to each interval such as a local width and spacing. Dimension assignment can be made as any desirable definition set for width and spacing, e.g., numerical values or continuous dimension-dependent design rules. Design rule checking for dimension-dependent spacing rules given in any arbitrary functional form of width and spacing is possible. Application of the invention can be made anywhere the width and spacing of VLSI shapes play a role, e.g., relative to a single edge, neighboring edges, neighboring shapes, and/or for edges in more than one layer of the IC design.
    • 一种用于对IC设计进行建模的方法,系统和程序产品,以一致的方式包括诸如局部宽度和IC形状间隔的尺寸。 特别地,本发明使用Voronoi图的核心部分将形状的边缘划分成间隔,并且为每个间隔分配至少一个维度,例如局部宽度和间隔。 尺寸分配可以作为针对宽度和间距设置的任何期望的定义,例如数值或连续尺寸依赖的设计规则。 设计规则检查以尺寸为依据的间距规则,以宽度和间距的任意功能形式给出是可能的。 本发明的应用可以在VLSI形状的宽度和间距例如相对于单个边缘,相邻边缘,相邻形状和/或针对IC设计的多于一个层中的边缘发挥作用的任何地方进行。
    • 35. 发明授权
    • System for search and analysis of systematic defects in integrated circuits
    • 集成电路系统缺陷的搜索和分析系统
    • US07284230B2
    • 2007-10-16
    • US10605849
    • 2003-10-30
    • Bette L. Bergman ReuterDavid L. DeMarisMark A. LavinWilliam C. LeipoldDaniel N. MaynardMaharaj Mukherjee
    • Bette L. Bergman ReuterDavid L. DeMarisMark A. LavinWilliam C. LeipoldDaniel N. MaynardMaharaj Mukherjee
    • G06F17/50
    • G06T7/001G06T2207/30148
    • Disclosed is a method of locating systematic defects in integrated circuits. Extracting and index processing of a circuit design and feature searching are performed. During extracting and index processing, a window grid for the circuit design is established and basis patterns are merged with shapes within each. Shapes in each window are transformed into feature vectors by finding intersections between basis patterns and shapes. Feature vectors are clustered to produce an index of feature vectors. During feature searching, a defect region window of the circuit layout is identified and basis patterns are merged with shapes in the defect region window. Shapes in the defect region window are transformed into defect vectors by finding intersections between basis patterns and shapes. Feature vectors similar to the defect vector are found using representative feature vectors from the index of feature vectors. Similarities and differences between defect vectors and feature vectors are analyzed.
    • 公开了一种定位集成电路系统缺陷的方法。 执行电路设计和特征搜索的提取和索引处理。 在提取和索引处理期间,建立了用于电路设计的窗口网格,并且将基本图案与每个窗体中的形状合并。 通过查找基础图案和形状之间的交点,将每个窗口中的形状转换为特征向量。 将特征向量聚类以产生特征向量的索引。 在特征搜索期间,识别电路布局的缺陷区域窗口,并将基本图案与缺陷区域窗口中的形状合并。 通过发现基础图案和形状之间的交点,将缺陷区域窗口中的形状转换为缺陷向量。 使用来自特征向量索引的代表特征向量,找到与缺陷向量相似的特征向量。 分析缺陷向量和特征向量之间的相似性和差异性。
    • 37. 发明申请
    • Optical Sensor Including Stacked Photosensitive Diodes
    • 包含堆叠感光二极管的光学传感器
    • US20090294812A1
    • 2009-12-03
    • US12129714
    • 2008-05-30
    • Jeffrey P. GambinoDaniel N. MaynardKevin N. OggRichard J. RasselRaymond J. Rosner
    • Jeffrey P. GambinoDaniel N. MaynardKevin N. OggRichard J. RasselRaymond J. Rosner
    • H01L27/146H01L31/18
    • H01L27/14647H01L27/14609H01L27/14641H01L27/14683
    • A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
    • 互补金属氧化物半导体(CMOS)图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。 在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。 用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。 第一半导体衬底和第二半导体衬底被接合,使得第一感光二极管位于第二感光二极管的下方。 第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。 感测装置可以在第一和第二光敏二极管之间共享。
    • 39. 发明授权
    • IC design modeling allowing dimension-dependent rule checking
    • IC设计建模允许维度依赖的规则检查
    • US07577927B2
    • 2009-08-18
    • US12186764
    • 2008-08-06
    • Evanthia PapadopoulouDaniel N. Maynard
    • Evanthia PapadopoulouDaniel N. Maynard
    • G06F17/50
    • G06F17/5081
    • A method, system and program product to model an IC design to include dimensions such as a local width and spacing of IC shapes in a consistent fashion. In particular, the invention uses a core portion of Voronoi diagrams to partition edges of a shape into intervals and assigns at least one dimension to each interval such as a local width and spacing. Dimension assignment can be made as any desirable definition set for width and spacing, e.g., numerical values or continuous dimension-dependent design rules. Design rule checking for dimension-dependent spacing rules given in any arbitrary functional form of width and spacing is possible. Application of the invention can be made anywhere the width and spacing of VLSI shapes play a role, e.g., relative to a single edge, neighboring edges, neighboring shapes, and/or for edges in more than one layer of the IC design.
    • 一种用于对IC设计进行建模的方法,系统和程序产品,以一致的方式包括诸如局部宽度和IC形状间隔的尺寸。 特别地,本发明使用Voronoi图的核心部分将形状的边缘划分成间隔,并且为每个间隔分配至少一个维度,例如局部宽度和间隔。 尺寸分配可以作为针对宽度和间距设置的任何期望的定义,例如数值或连续尺寸依赖的设计规则。 设计规则检查以尺寸为依据的间距规则,以宽度和间距的任意功能形式给出是可能的。 本发明的应用可以在VLSI形状的宽度和间距例如相对于单个边缘,相邻边缘,相邻形状和/或针对IC设计的多于一个层中的边缘发挥作用的任何地方进行。