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31. 发明授权

US06350320B1 Heater for processing chamber 有权
标题翻译：加热器处理室
公开(公告)号：US06350320B1
公开(公告)日：2002-02-26
申请号：US09510110
申请日：2000-02-22
申请人： Semyon Sherstinsky , Alison Gilliam , Paul Smith , Leonel A. Zuniga , Ted Yoshidome , Nitin Khurana , Rod Mosely , Umesh Madhav Kelkar , Joseph Yudovsky , Alan Popiolkowski
发明人： Semyon Sherstinsky , Alison Gilliam , Paul Smith , Leonel A. Zuniga , Ted Yoshidome , Nitin Khurana , Rod Mosely , Umesh Madhav Kelkar , Joseph Yudovsky , Alan Popiolkowski
IPC分类号： C23C1600
CPC分类号： H01J37/32862 , H01J37/3244
摘要： A gas delivery apparatus and method for directing a flow of gas to the edge of a substrate at an angle to the radial direction of the substrate is provided. The apparatus directs the gas from a gas opening, over a plurality of grooves that are angled relative to a radial line originating at a center of the gas delivery apparatus. Subsequently, the gas is flowed over a portion of the substrate to prevent reactive gases from depositing on selective portions of the substrate.
摘要翻译：提供一种气体输送装置和方法，用于将气体流引导到基板的边缘与基板的径向方向成一定角度。该装置引导来自气体开口的气体在相对于源自气体输送装置的中心的径向线成角度的多个凹槽上。随后，气体流过衬底的一部分，以防止反应性气体沉积在衬底的选择性部分上。

32. 发明授权

US09355819B2 Elongated capacitively coupled plasma source for high temperature low pressure environments 有权
标题翻译：用于高温低压环境的细长电容耦合等离子体源
公开(公告)号：US09355819B2
公开(公告)日：2016-05-31
申请号：US14460683
申请日：2014-08-15
申请人： John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
发明人： John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32357 , H01J37/32513 , H01J37/32541 , H01J37/32568
摘要： A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.
摘要翻译：描述了与处理室一起使用的模块化等离子体源组件。该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。

33. 发明申请

US20160068958A1 Lamp Heater For Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积灯加热器
公开(公告)号：US20160068958A1
公开(公告)日：2016-03-10
申请号：US14785009
申请日：2014-04-10
申请人： Umesh M KELKAR , Kallol BERA , Karthik RAMANATHAN , Garry K KWONG , Joseph YUDOVSKY , Applied Materials, Inc.
发明人： Umesh M. Kelkar , Kallol Bera , Karthik Ramanathan , Garry K Kwong , Joseph Yudovsky
IPC分类号： C23C16/46 , C23C16/458 , C23C16/455
CPC分类号： C23C16/46 , C23C16/45544 , C23C16/4584 , C23C16/481 , C23C16/52 , H01L21/67115
摘要： Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.
摘要翻译：描述了在基座组件上处理多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。多个线性灯被定位和控制在区域中以提供均匀的加热。

34. 发明申请

US20160024655A1 Atmospheric Lid With Rigid Plate For Carousel Processing Chambers 审中-公开
标题翻译：用于转盘加工室的刚性板的大气盖
公开(公告)号：US20160024655A1
公开(公告)日：2016-01-28
申请号：US14774032
申请日：2014-03-14
申请人： Joseph YUDOVSKY , Kevin GRIFFIN
发明人： Joseph Yudovsky , Kevin Griffin
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44 , H01L21/687
CPC分类号： C23C16/45557 , C23C16/4409 , C23C16/45544 , C23C16/45563 , C23C16/45565 , C23C16/45574 , C23C16/4584 , H01J37/32458 , H01J37/32513 , H01J37/32605 , H01L21/67126 , H01L21/6719 , H01L21/68785
摘要： Processing chambers including lid assemblies which form a volume above an injector assembly to decrease the deflection of the injector assembly as a result of the pressure differential between the processing side of the injector assembly and the atmospheric side of the injector assembly.
摘要翻译：处理室包括盖组件，其形成在喷射器组件上方的体积，以减少喷射器组件的偏移，这是由于喷射器组件的处理侧和喷射器组件的大气侧之间的压力差引起的。

35. 发明申请

US20150376790A1 Apparatus And Methods For Differential Pressure Chucking Of Substrates 审中-公开
标题翻译：基板压差卡盘的设备及方法
公开(公告)号：US20150376790A1
公开(公告)日：2015-12-31
申请号：US14768911
申请日：2014-02-20
申请人： Joseph YUDOVSKY , Kevin Griffin , Kaushal GANGAKHEDKAR
发明人： Joseph Yudovsky , Kevin Griffin , Kaushal Gangakhedkar
IPC分类号： C23C16/48 , C23C16/458 , H01L21/02 , C23C16/455
CPC分类号： C23C16/481 , C23C16/455 , C23C16/45544 , C23C16/4583 , C23C16/4586 , H01L21/02104
摘要： Apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing.
摘要翻译：用于处理半导体晶片的装置和方法，使得晶片在处理期间保持就位。晶片经受顶表面和底表面之间的压差，使得足够的力防止晶片在加工过程中移动。

36. 发明申请

US20140127404A1 Apparatus For Spatial Atomic Layer Deposition With Recirculation And Methods Of Use 审中-公开
标题翻译：用于具有循环的空间原子层沉积的装置和使用方法
公开(公告)号：US20140127404A1
公开(公告)日：2014-05-08
申请号：US14073114
申请日：2013-11-06
申请人： Joseph Yudovsky , Hemant P. Mungekar , Michael S. Cox , Zheng Yuan
发明人： Joseph Yudovsky , Hemant P. Mungekar , Michael S. Cox , Zheng Yuan
IPC分类号： C23C16/455
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45593
摘要： Provided are atomic layer deposition apparatus and methods including a plurality of elongate gas ports and pump ports in communication with multiple conduits to transport the gases from the processing chamber to be condensed, stored and/or recirculated.
摘要翻译：提供的是原子层沉积设备和方法，包括多个细长气体端口和与多个管道连通的泵口，以将来自处理室的气体输送到待冷凝，储存和/或再循环。

37. 发明申请

US20140106565A1 Methods For Atomic Layer Etching 有权
标题翻译：原子层蚀刻方法
公开(公告)号：US20140106565A1
公开(公告)日：2014-04-17
申请号：US14106166
申请日：2013-12-13
申请人： Mei Chang , Joseph Yudovsky
发明人： Mei Chang , Joseph Yudovsky
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译：提供了使用原子层沉积装置蚀刻衬底的方法。讨论了包括具有热元件的气体分布板的原子层沉积设备。热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

38. 发明申请

US20130192761A1 Rotary Substrate Processing System 审中-公开
标题翻译：旋转底材加工系统
公开(公告)号：US20130192761A1
公开(公告)日：2013-08-01
申请号：US13754733
申请日：2013-01-30
申请人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
发明人： Joseph Yudovsky , Ralf Hofmann , Jeonghoon Oh , Li-Qun Xia , Toshiaki Fujita , Pravin K. Narwankar , Nag B, Patibandla , Srinivas Satya , Banqiu Wu
IPC分类号： C23C16/54 , B05C13/00
CPC分类号： C23C16/54 , B05C13/00 , C23C16/45551
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.
摘要翻译：提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。每个衬底位于设置在衬底支撑组件上的衬底载体上。多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

39. 发明申请

US20130164445A1 Self-Contained Heating Element 审中-公开
标题翻译：自包含加热元件
公开(公告)号：US20130164445A1
公开(公告)日：2013-06-27
申请号：US13720301
申请日：2012-12-19
申请人： Garry K. Kwong , Joseph Yudovsky , Steven D. Marcus
发明人： Garry K. Kwong , Joseph Yudovsky , Steven D. Marcus
IPC分类号： C23C16/448
CPC分类号： C23C16/448 , C23C16/44 , C23C16/45551 , C23C16/45563 , C23C16/45574
摘要： Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described.
摘要翻译：提供了包括细长外壳的组件，其包括在处理室中经历的温度下耐受热膨胀的材料。至少一个加热元件沿着细长外壳的纵向轴线延伸穿过开放的内部区域，允许气体流沿基本上垂直于纵向轴线的方向通过加热元件。还描述了使用加热元件处理衬底以激发气态前体物质的方法。

40. 发明申请

US20130143415A1 Multi-Component Film Deposition 审中-公开
标题翻译：多组分膜沉积
公开(公告)号：US20130143415A1
公开(公告)日：2013-06-06
申请号：US13308849
申请日：2011-12-01
申请人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
发明人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
IPC分类号： H01L21/31 , B67D7/06 , C23C16/455
CPC分类号： C23C16/45551
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.
摘要翻译：提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口多数。气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

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