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    • 31. 发明授权
    • Semiconductor devices having through-contacts and related fabrication methods
    • 具有通孔和相关制造方法的半导体器件
    • US08951907B2
    • 2015-02-10
    • US12968068
    • 2010-12-14
    • Ralf RichterJens HeinrichHolger Schuehrer
    • Ralf RichterJens HeinrichHolger Schuehrer
    • H01L21/4763H01L21/768H01L21/285H01L23/485
    • H01L21/76808H01L21/28512H01L21/76802H01L21/76897H01L23/485H01L2924/0002H01L2924/00
    • Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.
    • 提供了半导体器件结构和相关制造方法的装置。 一种用于制造半导体器件结构的方法包括形成覆盖在与栅极结构相邻的半导体衬底中形成的掺杂区域的介电材料层,并在该介电材料层中形成导电接触。 导电接触覆盖并电连接到掺杂区域。 该方法继续通过形成覆盖导电接触的第二层介电材料,在覆盖导电接触的第二层中形成空隙区域,形成覆盖空隙区域的第三层电介质材料,以及在第三层中形成另一个空隙区域 覆盖第二层中的空隙区域的至少一部分。 该方法通过形成填充两个空隙区域以接触导电触点的导电材料而继续。