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31. 发明授权

US08933561B2 Semiconductor device for semiconductor package having through silicon vias of different heights 有权
标题翻译：具有通过不同高度的硅通孔的半导体封装的半导体器件
公开(公告)号：US08933561B2
公开(公告)日：2015-01-13
申请号：US13211574
申请日：2011-08-17
申请人： SeYoung Jeong , Hogeon Song , Chungsun Lee , Ho-Jin Lee
发明人： SeYoung Jeong , Hogeon Song , Chungsun Lee , Ho-Jin Lee
IPC分类号： H01L23/48 , H01L21/768 , H01L23/00 , H01L25/065 , H01L25/18 , H01L25/00 , H01L21/56 , H01L23/31
CPC分类号： H01L23/481 , H01L21/563 , H01L21/76898 , H01L23/3128 , H01L24/04 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/13009 , H01L2224/13025 , H01L2224/1403 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/48227 , H01L2224/73257 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06544 , H01L2225/06562 , H01L2225/06568 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1304 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19104 , H01L2924/00 , H01L2224/05552 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.
摘要翻译：提供一种半导体器件。半导体器件可以包括第一半导体芯片，其包括具有第一突起高度的第一至第二硅通孔以及具有大于第一突出高度的第二突出高度的第二穿透硅通孔，该第二突出高度穿过第一半导体芯片的至少一部分，第二半导体芯片可以电连接到第一通孔硅通孔，并且第三半导体芯片可以电连接到第二通孔硅通孔。

32. 发明授权

US08592991B2 Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device 有权
标题翻译：半导体装置及其制造方法以及包含该半导体装置的半导体封装
公开(公告)号：US08592991B2
公开(公告)日：2013-11-26
申请号：US13235369
申请日：2011-09-17
申请人： Ho-Jin Lee , Tae-Je Cho , Dong-Hyeon Jang , Ho-Geon Song , Se-Young Jeong , Un-Byoung Kang , Min-Seung Yoon
发明人： Ho-Jin Lee , Tae-Je Cho , Dong-Hyeon Jang , Ho-Geon Song , Se-Young Jeong , Un-Byoung Kang , Min-Seung Yoon
IPC分类号： H01L23/48 , H01L23/52 , H01L29/00
CPC分类号： H01L23/49844 , H01L21/76831 , H01L21/76844 , H01L21/76898 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/525 , H01L25/0657 , H01L2224/02372 , H01L2224/05009 , H01L2224/13025 , H01L2224/16 , H01L2224/16145 , H01L2224/16227 , H01L2224/17181 , H01L2225/06513 , H01L2225/06544 , H01L2924/15311
摘要： In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.
摘要翻译：在一个实施例中，半导体器件包括具有第一表面的半导体衬底和与第一表面相对的第二表面。第二表面限定再分布沟槽。基板具有贯穿其中的通孔。半导体器件还包括设置在通孔中的贯通孔。通孔可以包括依次形成在通孔的内壁上的通孔绝缘层，阻挡层。通孔还可以包括邻近阻挡层的导电连接器。半导体器件还包括形成在衬底的第二表面上的绝缘层图案。绝缘层图案限定了暴露通孔的顶表面的区域的开口。半导体器件包括设置在沟槽中并与通孔电连接的再分配层。绝缘层图案与导电连接器的区域重叠。

33. 发明授权

US08492902B2 Multi-layer TSV insulation and methods of fabricating the same 有权
标题翻译：多层TSV绝缘及其制造方法
公开(公告)号：US08492902B2
公开(公告)日：2013-07-23
申请号：US13049661
申请日：2011-03-16
申请人： Ho-Jin Lee , SeYoung Jeong , Jae-hyun Phee , Jung-Hwan Kim , Tae Hong Min
发明人： Ho-Jin Lee , SeYoung Jeong , Jae-hyun Phee , Jung-Hwan Kim , Tae Hong Min
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/76898 , H01L21/76831 , H01L23/481 , H01L25/105 , H01L2224/0557 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/1023 , H01L2225/1058 , H01L2924/12044 , H01L2924/15311 , H01L2924/00014
摘要： Provided is a semiconductor device. The semiconductor device may include a substrate and a stacked insulation layer on a sidewall of an opening which penetrates the substrate. The stacked insulation layer can include at least one first insulation layer and at least one second insulation layer whose dielectric constant is different than that of the first insulation layer. One insulation layer may be a polymer and one insulation layer may be a silicon based insulation layer. The insulation layers may be uniform in thickness or may vary as a distance from the substrate changes.
摘要翻译：提供一种半导体器件。半导体器件可以包括衬底和在穿透衬底的开口的侧壁上的层叠绝缘层。层叠绝缘层可以包括至少一个第一绝缘层和至少一个第二绝缘层，其介电常数不同于第一绝缘层的介电常数。一个绝缘层可以是聚合物，一个绝缘层可以是硅基绝缘层。绝缘层的厚度可以是均匀的，或者可以随着离开衬底的距离而改变。

34. 发明授权

US08433293B2 Apparatus and method for providing contents push service, and mobile terminal and operation method thereof 有权
标题翻译：提供内容推送服务的装置和方法及其移动终端及其操作方法
公开(公告)号：US08433293B2
公开(公告)日：2013-04-30
申请号：US12447886
申请日：2007-11-08
申请人： Ho-Jin Lee
发明人： Ho-Jin Lee
IPC分类号： H04L12/58
CPC分类号： H04L67/26 , H04L67/04 , H04L69/16 , H04L69/162 , H04L69/164
摘要： The present invention relates to an apparatus and method of providing a content push service, a mobile terminal, and a method of operating a mobile terminal. According to an exemplary embodiment of the present invention, a user datagram protocol (UDP) port is set between the mobile terminal and a content push service providing server. In addition, the mobile terminal drives an application that receives the content push service through the set user datagram protocol (UDP) port, by the request of the content push service providing server. The mobile terminal receives the content push service from the content push service providing server through the driven application. Accordingly, it is not necessary to select a specific identifier for each of existing applications and recognize a specific identifier for each node of the mobile communication network.
摘要翻译：本发明涉及提供内容推送服务，移动终端和操作移动终端的方法的装置和方法。根据本发明的示例性实施例，在移动终端和内容推送服务提供服务器之间设置用户数据报协议（UDP）端口。此外，通过内容推送服务提供服务器的请求，移动终端通过设置的用户数据报协议（UDP）端口来驱动接收内容推送服务的应用。移动终端通过驱动应用从内容推送服务提供服务器接收内容推送服务。因此，不需要为每个现有应用选择特定的标识符并且识别移动通信网络的每个节点的特定标识符。

35. 发明授权

US08346962B2 Session initiation protocol message routing method between IP networks using different IP address format 有权
标题翻译：使用不同IP地址格式的IP网络之间的会话发起协议消息路由方法
公开(公告)号：US08346962B2
公开(公告)日：2013-01-01
申请号：US13025911
申请日：2011-02-11
申请人： Jang-Won Lee , Ho-Jin Lee , Sang-Man Bak
发明人： Jang-Won Lee , Ho-Jin Lee , Sang-Man Bak
IPC分类号： G06F15/173
CPC分类号： H04L65/1006 , H04L29/06027 , H04L29/12367 , H04L29/12528 , H04L29/12556 , H04L61/2514 , H04L61/2575 , H04L61/2585 , H04L65/103 , H04L65/104 , H04L65/1043
摘要： Disclosed are examples of an interworking system and related methods. The interworking system can be configured to implement a session initiation protocol (SIP) message routing method that may include checking a transmitting subject and a transmission method of a SIP message, applying a network address translation based on the checked message's transmitting subject and its transmission method, and specifying the address of the node selected based on the checked message's transmitting subject in routing path information.
摘要翻译：公开了互通系统和相关方法的示例。互通系统可以被配置为实现会话发起协议（SIP）消息路由方法，该方法可以包括检查发送对象和SIP消息的发送方法，基于所检查的消息的发送对象及其发送方法应用网络地址转换并且基于所检查的消息的发送对象在路由路径信息中指定选择的节点的地址。

36. 发明授权

US08289208B2 Device for tracking polarization 失效
标题翻译：用于跟踪极化的装置
公开(公告)号：US08289208B2
公开(公告)日：2012-10-16
申请号：US12664053
申请日：2008-05-08
申请人： Bon-Jun Ku , Do-Seob Ahn , Ho-Jin Lee
发明人： Bon-Jun Ku , Do-Seob Ahn , Ho-Jin Lee
IPC分类号： H04B7/185 , H04B1/00
CPC分类号： H04B7/10
摘要： Provided is a device for tracking polarizations. A receiving polarization tracking device includes a feeder for finding vertical and horizontal vector components by receiving vertical and horizontal polarizations, a polarization estimator for estimating distortion of polarizations using the vertical and horizontal vector components outputted from the feeder, a polarization controller for controlling amplitudes and phases of vertical and horizontal polarizations based on information about the estimated distortion from the polarization estimator and an output signal from the receiving polarization tracking device, and a combiner for combining the vertical and horizontal polarizations controlled from the polarization controller.
摘要翻译：提供了用于跟踪偏振的装置。接收偏振跟踪装置包括：通过接收垂直和水平偏振来发现垂直和水平矢量分量的馈线，用于使用从馈线输出的垂直和水平矢量分量估计极化失真的偏振估计器，用于控制幅度和相位的偏振控制器基于关于来自极化估计器的估计失真的信息和来自接收偏振跟踪装置的输出信号的垂直和水平偏振的组合器，以及用于组合从偏振控制器控制的垂直和水平极化的组合器。

37. 发明授权

US08232644B2 Wafer level package having a stress relief spacer and manufacturing method thereof 有权
标题翻译：具有应力消除间隔物的晶片级封装及其制造方法
公开(公告)号：US08232644B2
公开(公告)日：2012-07-31
申请号：US13346191
申请日：2012-01-09
申请人： Hyun-Soo Chung , Ho-Jin Lee , Dong-Hyun Jang , Dong-Ho Lee
发明人： Hyun-Soo Chung , Ho-Jin Lee , Dong-Hyun Jang , Dong-Ho Lee
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/481 , H01L25/50 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/13025 , H01L2224/274 , H01L2225/06513 , H01L2225/06541 , H01L2924/01079 , H01L2924/01087
摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.
摘要翻译：在具有应力消除间隔物的半导体器件封装及其制造方法中，从芯片本体延伸的金属互连指状物提供芯片互连。金属手指通过应力消除间隔物与芯片的主体隔离。在一个示例中，这种隔离采取气隙的形式。在另一个实例中，这种隔离采用弹性体材料的形式。在这两种情况下，都避免了金属互连指和芯体之间的热膨胀系数的不匹配，从而减轻了与开裂和分层相关的问题，从而提高了器件的产量和器件的可靠性。

38. 发明授权

US08155041B2 Method for handover between heterogeneous networks using link trigger signal in multi-interface mobile router 有权
标题翻译：在多接口移动路由器中使用链路触发信号的异构网络之间切换的方法
公开(公告)号：US08155041B2
公开(公告)日：2012-04-10
申请号：US12186670
申请日：2008-08-06
申请人： Hyun-Ha Hong , Ki-Seop Han , Dae-Ig Chang , Ho-Jin Lee
发明人： Hyun-Ha Hong , Ki-Seop Han , Dae-Ig Chang , Ho-Jin Lee
IPC分类号： H04W36/32
CPC分类号： H04L12/66 , H04W36/0016 , H04W36/14 , H04W40/36 , H04W80/04 , H04W84/005
摘要： Provided is a method for handover between heterogeneous networks using a link trigger signal in a multi-interface mobile router. The method includes: maintaining a state of a second network access interface in a sleep state, activating a first network access interface, receiving and transmitting the first network service to a subordinate node in the mobile router located in a first network; when the mobile router senses a second network link-up trigger signal while moving to the second network, changing the state of the second network access interface into an active state and performing handover; and receiving a second network service through the activated second network access interface in the mobile router performing the handover and transmitting the second network service to the subordinate node.
摘要翻译：提供了一种使用多接口移动路由器中的链路触发信号在异构网络之间切换的方法。该方法包括：将第二网络接入接口的状态保持在睡眠状态，激活第一网络接入接口，将第一网络服务接收并发送到位于第一网络中的移动路由器中的下级节点; 当移动路由器在移动到第二网络时感测到第二网络链接触发信号，将第二网络接入接口的状态改变为活动状态并执行切换; 以及通过执行切换的移动路由器中的激活的第二网络接入接口接收第二网络服务，并将第二网络服务发送到下级节点。

39. 发明申请

US20120056330A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120056330A1
公开(公告)日：2012-03-08
申请号：US13186049
申请日：2011-07-19
申请人： Ho-Jin Lee , Sung-Dong Cho , Se-Young Jeong , Yeong-Lyeol Park , Sin-Woo Kang
发明人： Ho-Jin Lee , Sung-Dong Cho , Se-Young Jeong , Yeong-Lyeol Park , Sin-Woo Kang
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/16145 , H01L2224/16225 , H01L2924/15311
摘要： A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.
摘要翻译：半导体器件可以包括衬底和通孔。衬底可以具有与第一表面相对的第一表面和第二表面，所述衬底包括形成在第一表面上的电路图案。贯通电极穿透基板并且可以电连接到电路图案，所述通孔包括在基板的厚度方向上从第一表面延伸的第一插塞和在厚度方向上从第二表面延伸的第二插塞以便连接到第一插头。

40. 发明授权

US08119448B2 Semiconductor chip, wafer stack package using the same, and methods of manufacturing the same 有权
标题翻译：半导体芯片，使用其的晶片堆叠封装及其制造方法
公开(公告)号：US08119448B2
公开(公告)日：2012-02-21
申请号：US12817304
申请日：2010-06-17
申请人： Son-Kwan Hwang , In-Young Lee , Ho-Jin Lee , Dong-Hyeon Jang
发明人： Son-Kwan Hwang , In-Young Lee , Ho-Jin Lee , Dong-Hyeon Jang
IPC分类号： H01L21/00
CPC分类号： H01L24/11 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/05599 , H01L2224/05647 , H01L2224/1147 , H01L2224/11902 , H01L2224/13025 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/9201 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10329 , H01L2224/05552
摘要： A semiconductor chip comprises a substrate including a front surface and a rear surface, the substrate having a first via hole formed in the front surface and a second via hole formed in the rear surface, a first conductive plug formed on the substrate, the first conductive plug including a first portion formed in the first via hole and a second portion protruding from the front surface of the substrate, and a second conductive plug formed on the first conductive plug, the second conductive plug having a smaller cross-sectional area than the first conductive plug.
摘要翻译：一种半导体芯片，包括：具有前表面和后表面的基板，所述基板具有形成在所述前表面上的第一通孔和形成在所述后表面中的第二通孔，形成在所述基板上的第一导电塞，所述第一导电所述插头包括形成在所述第一通孔中的第一部分和从所述基板的前表面突出的第二部分，以及形成在所述第一导电插塞上的第二导电插塞，所述第二导电插塞具有比所述第一通孔更小的横截面积导电插头

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