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31. 发明授权

US06790323B2 Self ionized sputtering using a high density plasma source 有权
标题翻译：使用高密度等离子体源进行自电离溅射
公开(公告)号：US06790323B2
公开(公告)日：2004-09-14
申请号：US09918136
申请日：2001-07-30
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Foster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Foster
IPC分类号： C23C1435
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
摘要翻译：磁控管对于低压等离子体溅射或持续自溅射特别有利，其面积减小但目标覆盖范围完全。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。由此，可以实现低压高离子化分级的溅射。

32. 发明授权

US06306265B1 High-density plasma for ionized metal deposition capable of exciting a plasma wave 有权
标题翻译：用于激发等离子体波的电离金属沉积的高密度等离子体
公开(公告)号：US06306265B1
公开(公告)日：2001-10-23
申请号：US09546798
申请日：2000-04-11
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
IPC分类号： C23C1434
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target. A preferred triangular shape having a small apex angle of 20 to 30° may be formed from outer bar magnets of one magnetic polarity enclosing an inner magnet of the other magnetic polarity. The magnetron allows the generation of plasma waves in the neighborhood of 22 MHz which interact with the 1 to 20 eV electrons of the plasma to thereby increase the plasma density.
摘要翻译：磁控管对于低压等离子体溅射或持续自溅射特别有利，其面积减小但目标覆盖范围完全。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边。具有20-30°的小顶角的优选的三角形形状可以由包围另一个磁极性的内磁体的一个磁极的外磁棒形成。磁控管允许在22MHz附近产生与等离子体的1至20eV电子相互作用的等离子体波，从而增加等离子体密度。

33. 发明授权

US07547644B2 Methods and apparatus for forming barrier layers in high aspect ratio vias 失效
标题翻译：在高纵横比通孔中形成阻挡层的方法和装置
公开(公告)号：US07547644B2
公开(公告)日：2009-06-16
申请号：US11264517
申请日：2005-11-01
申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.
摘要翻译：在第一方面，提供了一种方法，其包括（1）在原子层沉积（ALD）室内使用原子层沉积在通孔的侧壁和底部上形成第一阻挡层; （2）通过溅射蚀刻从所述通孔的底部去除所述第一阻挡层的至少一部分; 和（3）在ALD室内的通孔的侧壁和底部上沉积第二阻挡层。提供了许多其它实施例，以及根据这些和其它方面的系统，方法和计算机程序产品。

34. 发明授权

US07335282B2 Sputtering using an unbalanced magnetron 有权
标题翻译：使用不平衡磁控管进行溅射
公开(公告)号：US07335282B2
公开(公告)日：2008-02-26
申请号：US10939832
申请日：2004-09-13
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
摘要翻译：溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。由此，可以实现低压高离子化分级的溅射。

35. 发明授权

US06784096B2 Methods and apparatus for forming barrier layers in high aspect ratio vias 失效
公开(公告)号：US06784096B2
公开(公告)日：2004-08-31
申请号：US10241373
申请日：2002-09-11
申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L214763
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

36. 发明申请

US20060057843A1 Methods and apparatus for forming barrier layers in high aspect ratio vias 失效
公开(公告)号：US20060057843A1
公开(公告)日：2006-03-16
申请号：US11264517
申请日：2005-11-01
申请人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

37. 发明授权

US06974771B2 Methods and apparatus for forming barrier layers in high aspect ratio vias 有权
标题翻译：在高纵横比通孔中形成阻挡层的方法和装置
公开(公告)号：US06974771B2
公开(公告)日：2005-12-13
申请号：US10894774
申请日：2004-07-20
申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C14/02 , C23C14/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/44 , H01L21/768 , C23C16/00 , H01L21/302 , H01L21/461 , H01L21/4763
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.
摘要翻译：在第一方面，提供了一种方法，其包括（1）在原子层沉积（ALD）室内使用原子层沉积在通孔的侧壁和底部上形成第一阻挡层; （2）通过溅射蚀刻从所述通孔的底部去除所述第一阻挡层的至少一部分; 和（3）在ALD室内的通孔的侧壁和底部上沉积第二阻挡层。提供了许多其它实施例，以及根据这些和其它方面的系统，方法和计算机程序产品。

38. 发明授权

US06884329B2 Diffusion enhanced ion plating for copper fill 失效
标题翻译：扩散增强离子电镀铜填充
公开(公告)号：US06884329B2
公开(公告)日：2005-04-26
申请号：US10340564
申请日：2003-01-10
申请人： Wei D. Wang , Anantha K. Subramani , Jianming Fu , Praburam Gopalraja , Jick M. Yu , Fusen Chen
发明人： Wei D. Wang , Anantha K. Subramani , Jianming Fu , Praburam Gopalraja , Jick M. Yu , Fusen Chen
IPC分类号： C23C14/04 , C23C14/34 , C23C14/54 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/345 , C23C14/541 , H01L21/2855 , H01L21/76865 , H01L21/76877
摘要： A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is divided into a first step performed at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole, and a second step performed at a higher temperature, e.g., at least 200° C. and with at least portions of low wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma. In still another aspect, copper sputtering, even in the final fill phase, is performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter from the corners.
摘要翻译：一种通过等离子体溅射工艺将铜填充到高纵横比通孔并允许消除电化学电镀的方法。在本发明的一个方面，溅射被分为在不超过100℃的低温下进行的第一步骤和至少部分高晶片偏压，从而填充孔的下半部分，并且第二步骤步骤在较高的温度例如至少200℃进行，并且至少部分低晶片偏置以完成孔填充。在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。在另一方面，即使在最终填充阶段，铜溅射也是通过多个低级和高级底座偏压循环进行的，以便在暴露的拐角上沉积铜并从拐角溅射。

39. 发明申请

US20050051424A1 Sputtering using an unbalanced magnetron 有权
标题翻译：使用不平衡磁控管进行溅射
公开(公告)号：US20050051424A1
公开(公告)日：2005-03-10
申请号：US10939832
申请日：2004-09-13
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
IPC分类号： C23C14/35 , H01J37/34 , C23C14/32
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
摘要翻译：溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。由此，可以实现低压高离子化分级的溅射。

40. 发明授权

US06413382B1 Pulsed sputtering with a small rotating magnetron 有权
标题翻译：用小旋转磁控管进行脉冲溅射
公开(公告)号：US06413382B1
公开(公告)日：2002-07-02
申请号：US09705324
申请日：2000-11-03
申请人： Wei Wang , Praburam Gopalraja , Jianming Fu , Zheng Xu
发明人： Wei Wang , Praburam Gopalraja , Jianming Fu , Zheng Xu
IPC分类号： C23C1435
CPC分类号： H01J37/3444 , H01J37/3408 , H01J37/3455
摘要： A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.
摘要翻译：一种磁控溅射反应器，其具有以小于10％且优选小于1％的占空比脉冲的靶，并且还具有面积小于目标区域围绕目标中心旋转的20％的面积的小磁控管，由此非常在与磁控管区域相邻的脉冲期间产生高等离子体密度。功率脉冲频率需要与旋转频率不同步，从而磁控管在不同脉冲期间不会覆盖磁控管的相同区域。有利地，功率脉冲在DC背景水平之上传送足以继续激发等离子体，使得每个脉冲不需要点火。

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