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31. 发明授权

US6138606A Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility 失效
标题翻译：离子注入机用于将含有高固体溶度元素的离子掺杂剂化合物植入浅区域
公开(公告)号：US6138606A
公开(公告)日：2000-10-31
申请号：US59532
申请日：1998-04-13
申请人： Peiching Ling
发明人： Peiching Ling
IPC分类号： H01L29/78 , C23C14/48 , H01L21/04 , H01L21/223 , H01L21/265 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/167 , C23C16/00 , H01J27/00
CPC分类号： H01L29/6659 , C23C14/48 , H01L21/0415 , H01L21/2236 , H01L21/26506 , H01L21/26513 , H01L21/2656 , H01L21/2658 , H01L29/0847 , H01L29/167 , H01J2237/08 , H01J2237/31701 , H01L29/7833
摘要： An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space. The ion source apparatus further includes a dopant ion-source composed of compounds comprising element selected from a group of elements consisting of silicon and germanium, the dopant ion-source disposed next to the space. The ion source apparatus further includes a voltage means connected to the anode, the hollow cathode, and the dopant ion source for discharging a plasma into the space for bombarding the dopant ion source for generating a dopant ion compound. The ion source apparatus further includes an ion-beam extracting means for extracting the dopant ion compound through the opening. In an alternate preferred embodiment, the ion source apparatus employs an electron beam device to generate the dopant ion compound. In yet another preferred embodiment, the ion source apparatus employs an ion beam device for generating the dopant ion compound.
摘要翻译：本发明公开了一种离子源装置。离子源装置包括具有用于容纳等离子体的内部空间和进入该空间的开口的阳极。离子源装置还包括空间内的中空阴极。离子源装置还包括掺杂剂离子源，该掺杂剂离子源包括选自由硅和锗组成的元素的元素的化合物，邻近该空间设置的掺杂剂离子源。离子源装置还包括连接到阳极的电压装置，空心阴极和掺杂剂离子源，用于将等离子体排放到用于轰击掺杂剂离子源的空间中以产生掺杂剂离子化合物。离子源装置还包括用于通过开口提取掺杂剂离子化合物的离子束提取装置。在替代的优选实施例中，离子源装置使用电子束装置来产生掺杂剂离子化合物。在另一优选实施例中，离子源装置采用离子束装置来产生掺杂剂离子化合物。

32. 发明授权

US5863831A Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility 失效
公开(公告)号：US5863831A
公开(公告)日：1999-01-26
申请号：US514757
申请日：1995-08-14
申请人： Peiching Ling , Tien Tien
发明人： Peiching Ling , Tien Tien
IPC分类号： H01L29/78 , C23C14/48 , H01L21/04 , H01L21/223 , H01L21/265 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/167
CPC分类号： H01L29/6659 , C23C14/48 , H01L21/0415 , H01L21/2236 , H01L21/26506 , H01L21/26513 , H01L21/2656 , H01L21/2658 , H01L29/0847 , H01L29/167 , H01J2237/08 , H01J2237/31701 , H01L29/7833
摘要： A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

33. 发明申请

US20150014738A1 LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US20150014738A1
公开(公告)日：2015-01-15
申请号：US14379774
申请日：2013-01-23
申请人： Peiching Ling
发明人： Peiching Ling , Vivek B. Dutta
IPC分类号： H01L33/64 , H01L33/00 , H01L33/36
CPC分类号： H01L33/647 , H01L33/486 , H01L33/507 , H01L33/62 , H01L2224/05554 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2933/0066 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-pervious encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-pervious encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.
摘要翻译：发光二极管封装及其制造方法。该封装包括具有与第一表面相对的第一表面和第二表面的发光二极管芯片，具有连接到发光二极管芯片的引线的金属框架（或TAB带）以及封装发光二极管的透光密封剂芯片，其中芯片的第二表面从第一透光密封剂暴露。金属框架（或TAB带）将发光二极管芯片连接到外部电路板。 LED封装不需要引线接合工艺。还提供了一种制造发光二极管封装的方法。

34. 发明授权

US08803185B2 Light emitting diode package and method of fabricating the same 有权
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US08803185B2
公开(公告)日：2014-08-12
申请号：US13401347
申请日：2012-02-21
申请人： Peiching Ling , Vivek B. Dutta
发明人： Peiching Ling , Vivek B. Dutta
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/005 , H01L33/486 , H01L33/507 , H01L33/647 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-pervious encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-pervious encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.
摘要翻译：发光二极管封装及其制造方法。该封装包括具有与第一表面相对的第一表面和第二表面的发光二极管芯片，具有连接到发光二极管芯片的引线的金属框架（或TAB带）以及封装发光二极管的透光密封剂芯片，其中芯片的第二表面从第一透光密封剂暴露。金属框架（或TAB带）将发光二极管芯片连接到外部电路板。 LED封装不需要引线接合工艺。还提供了一种制造发光二极管封装的方法。

35. 发明授权

US06579420B2 Apparatus and method for uniformly depositing thin films over substrates 失效
公开(公告)号：US06579420B2
公开(公告)日：2003-06-17
申请号：US09780212
申请日：2001-02-09
申请人： Zhimin Wan , Jiong Chen , Peiching Ling , Jianmin Qiao
发明人： Zhimin Wan , Jiong Chen , Peiching Ling , Jianmin Qiao
IPC分类号： C23C1600
CPC分类号： C23C14/505 , C23C14/044 , C23C14/46
摘要： A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

36. 发明授权

US06109207A Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility 失效
标题翻译：使用含有高固体溶解度的元素的掺杂剂制造具有浅P型区域的半导体器件的工艺
公开(公告)号：US06109207A
公开(公告)日：2000-08-29
申请号：US959248
申请日：1997-10-28
申请人： Peiching Ling , Tien Tien
发明人： Peiching Ling , Tien Tien
IPC分类号： H01L29/78 , C23C14/48 , H01L21/04 , H01L21/223 , H01L21/265 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/167 , H01L21/425 , C23L16/00
CPC分类号： H01L29/6659 , C23C14/48 , H01L21/0415 , H01L21/2236 , H01L21/26506 , H01L21/26513 , H01L21/2656 , H01L21/2658 , H01L29/0847 , H01L29/167 , H01J2237/08 , H01J2237/31701 , H01L29/7833
摘要： A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.
摘要翻译：一种具有至少一个p沟道晶体管（10）的半导体，具有浅的p型掺杂源极/漏极区域（16和18），其含有以化合物形式注入到掺杂区域（16和18）中的硼，所述化合物由硼和选自由衬底（21）的元件组成的组和与衬底（21）形成固溶体的元件的元件（或元件）。特别地，在硅衬底的情况下，化合物可以包含BSi2，B2Si，B4Si和B6Si。使用这种化合物使得能够在p掺杂区域上形成高度可靠的接触。

37. 发明授权

US5811852A Memory cell structure fabricated with improved fabrication process by forming dielectric layer directly on an insulated surface of a substrate 失效
标题翻译：通过在衬底的绝缘表面上直接形成电介质层而通过改进的制造工艺制造的存储单元结构
公开(公告)号：US5811852A
公开(公告)日：1998-09-22
申请号：US587952
申请日：1996-01-17
申请人： Peiching Ling
发明人： Peiching Ling
IPC分类号： H01L29/423 , H01L29/788
CPC分类号： H01L29/42324 , H01L29/7881
摘要： This invention discloses a programmable read-only-memory (PROM). The PROM is formed and supported on a substrate. The PROM includes a transistor region in the substrate including a source region, a drain region and a floating gate region disposed between the drain region and the source region. The PROM further includes a floating gate formed on top of the floating gate region with a single poly layer on the substrate. The PROM further includes a floating gate extension region disposed near the transistor region, the floating gate extension region is connected with the floating gate region. The PROM further includes a control gate formed on the substrate near the floating gate extension region opposite the transistor region whereby a charge state of the floating gate extension region is controlled by the control gate.
摘要翻译：本发明公开了一种可编程只读存储器（PROM）。 PROM形成并支撑在基板上。 PROM包括在衬底中的晶体管区域，其包括设置在漏极区域和源极区域之间的源极区域，漏极区域和浮置栅极区域。 PROM还包括形成在浮动栅极区域的顶部上的浮置栅极，在衬底上具有单个多晶硅层。 PROM还包括设置在晶体管区域附近的浮置栅极延伸区域，浮动栅极延伸区域与浮动栅极区域连接。 PROM还包括形成在衬底附近的控制栅极，该栅极延伸区域与晶体管区域相对，由此浮栅延伸区域的电荷状态由控制栅极控制。

38. 发明申请

US20140299908A1 LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US20140299908A1
公开(公告)日：2014-10-09
申请号：US14267985
申请日：2014-05-02
申请人： Peiching Ling
发明人： Peiching Ling , Vivek B. Dutta
IPC分类号： H01L33/62 , H01L33/00
CPC分类号： H01L33/62 , H01L33/005 , H01L33/486 , H01L33/507 , H01L33/647 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-pervious encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-pervious encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.
摘要翻译：发光二极管封装及其制造方法。该封装包括具有与第一表面相对的第一表面和第二表面的发光二极管芯片，具有连接到发光二极管芯片的引线的金属框架（或TAB带）以及封装发光二极管的透光密封剂芯片，其中芯片的第二表面从第一透光密封剂暴露。金属框架（或TAB带）将发光二极管芯片连接到外部电路板。 LED封装不需要引线接合工艺。还提供了一种制造发光二极管封装的方法。

39. 发明申请

US20130327956A1 PHOSPHOR LAYER DETECTION SYSTEM 审中-公开
标题翻译：磷光体层检测系统
公开(公告)号：US20130327956A1
公开(公告)日：2013-12-12
申请号：US13490642
申请日：2012-06-07
申请人： Peiching Ling , Dezhong Liu
发明人： Peiching Ling , Dezhong Liu
IPC分类号： G01N21/64
CPC分类号： G01N21/64 , G01N2021/8416
摘要： A detection system for detecting a fluorescent layer formed in a fluorescent layer forming system is disclosed. The detection system of the present invention includes a light source module, a light detecting module and a light transmitting module, wherein the light source module emits a detecting light to a fluorescent layer, the detecting light is then converted by the fluorescent layer to a light to be detected, the light to be detected is received by the light detecting module, and detection data are formed. A control instruction is transmitted to the fluorescent layer forming system according to the control instruction to control the fluorescent layer forming system, such that a desired fluorescent layer is formed on an object, and optical property of fluorescent layers in each fabrication is consistent.
摘要翻译：公开了一种用于检测在荧光层形成系统中形成的荧光层的检测系统。本发明的检测系统包括光源模块，光检测模块和光传输模块，其中光源模块向荧光层发射检测光，然后将检测光由荧光层转换成光要被检测到，由光检测模块接收待检测的光，并且形成检测数据。根据用于控制荧光层形成系统的控制指令将控制指令传输到荧光层形成系统，使得在物体上形成期望的荧光层，并且每个制造中的荧光层的光学特性是一致的。

40. 发明授权

US08323998B2 Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure 失效
标题翻译：在LED封装结构上形成荧光材料均匀层的方法和装置
公开(公告)号：US08323998B2
公开(公告)日：2012-12-04
申请号：US12587291
申请日：2009-10-05
申请人： Peiching Ling
发明人： Peiching Ling
IPC分类号： H01L21/00 , H01L23/02 , H01L23/12
CPC分类号： H05B33/10 , C09K11/02 , C09K11/7774 , C23C24/06 , C23C24/08 , H01L33/507 , H01L33/508 , H01L2933/0041
摘要： A method for forming wavelength-conversion LED encapsulant structure includes forming an LED encapsulant structure body, forming a layer of a wavelength-conversion material on a first surface, disposing the first surface to cause the wavelength-conversion material to be in contact with a surface region of the LED encapsulant structure body, applying a pressure between the first surface and the surface region of the LED encapsulant structure body, and causing at least a portion of the wavelength-conversion material to be at least partially embedded in the surface region of the LED encapsulant structure body.
摘要翻译：用于形成波长转换LED密封剂结构的方法包括形成LED密封结构体，在第一表面上形成波长转换材料层，设置第一表面以使波长转换材料与表面接触区域，在所述LED密封结构体的所述第一表面和所述表面区域之间施加压力，并且使所述波长转换材料的至少一部分至少部分地嵌入所述LED封装结构体的表面区域中; LED密封结构体。

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