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31. 发明授权

EP2519981B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权
公开(公告)号：EP2519981B1
公开(公告)日：2017-08-23
申请号：EP10796415.7
申请日：2010-12-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： BUTENDEICH, Rainer , WALTER, Alexander , PETER, Matthias , MEYER, Tobias , TAKI, Tetsuya , MAIWALD, Hubert
IPC分类号： H01L33/02 , H01L27/15 , H01L27/02 , H01L31/0304 , H01L31/0236 , H01L31/0352 , H01L33/24
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00

32. 发明公开

EP2519979A2 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERWENDUNG EINER AUF ALGAN BASIERENDEN ZWISCHENSCHICHT 有权转让
标题翻译：光电子半导体芯片和AlGaN中的使用基于过渡层
公开(公告)号：EP2519979A2
公开(公告)日：2012-11-07
申请号：EP10798083.1
申请日：2010-12-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , GMEINWIESER, Nikolaus , TAKI, Tetsuya , LUGAUER, Hans-Jürgen , WALTER, Alexander
IPC分类号： H01L33/00 , H01L33/32 , H01L33/02 , H01L33/22 , H01L33/16 , H01L33/12
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： In at least one form of embodiment of the optoelectronic semiconductor chip (100), said chip comprises a semiconductor layer sequence (1) based on GaN, InGaN, AlGaN und/oder InAlGaN. The semiconductor layer sequence (1) contains a p-doped layer sequence (2), an n-doped layer sequence (4), and an active zone (3) between the p-doped layer sequence (2) and the n-doped layer sequence (4). The semiconductor layer sequence (1) comprises at least one intermediate layer (5) based on Al
x Ga
1-x N, where 0

33. 发明授权

EP2465148B1 ELEKTRISCH GEPUMPTER OPTOELEKTRONISCHER HALBLEITERCHIP 有权
标题翻译：电子调光器
公开(公告)号：EP2465148B1
公开(公告)日：2017-08-09
申请号：EP10726134.9
申请日：2010-06-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , OFF, Jürgen , TAKI, Tetsuya , HERTKORN, Joachim , SABATHIL, Matthias , LAUBSCH, Ansgar , BIEBERSDORF, Andreas
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/32 , H01L2924/0002 , H01L2924/00

34. 发明授权

EP2165374B1 STRAHLUNGSEMITTIERENDER HALBLEITERKÖRPER 有权
标题翻译：发射辐射的半导体本体
公开(公告)号：EP2165374B1
公开(公告)日：2016-08-17
申请号：EP08773274.9
申请日：2008-06-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： STRASSBURG, Martin , HÖPPEL, Lutz , SABATHIL, Matthias , PETER, Matthias , STRAUSS, Uwe
IPC分类号： H01L33/04 , H01L33/32 , H01S5/30 , B82Y20/00 , H01L33/06 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3095 , H01S5/34333

35. 发明公开

EP2519980A1 LICHTEMITTIERENDER HALBLEITERCHIP 有权转让
公开(公告)号：EP2519980A1
公开(公告)日：2012-11-07
申请号：EP10798567.3
申请日：2010-12-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , WALTER, Alexander , TAKI, Tetsuya , OFF, Jürgen , BUTENDEICH, Rainer , HERTKORN, Joachim
IPC分类号： H01L33/04 , H01L33/14 , H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a semiconductor chip (1) comprising a semiconductor body (2) having a semiconductor layer sequence. An active region (20) used to generate radiation is arranged between an n-conductive multi-layer structure (21) and a p-conductive semiconductor layer (22). The n-conductive multi-layer structure contains a doping profiled element comprising at least one doping tip (4).
摘要翻译：半导体芯片包括具有半导体层序列的半导体本体。用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。在包括至少一个掺杂峰的n导电多层结构中形成掺杂分布。

36. 发明公开

EP2335292A1 LEUCHTMITTEL 审中-公开
公开(公告)号：EP2335292A1
公开(公告)日：2011-06-22
申请号：EP09776087.0
申请日：2009-08-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： STAUSS, Peter , WINDISCH, Reiner , BAUMANN, Frank , PETER, Matthias
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/50 , H01L2224/32225 , H01L2924/0002 , H01L2924/00
摘要： In at least one embodiment of the lamp (1), said lamp comprises at least one optoelectronic semiconductor component (2), which during operation with at least one first wavelength (L1) and at least one second wavelength (L2) emits electromagnetic radiation, wherein the first wavelength (L1) and the second wavelength (L2) differ from each other and are below 500 nm, in particular between 200 nm and 500 nm. The lamp (1) furthermore comprises at least one conversion means (3), which converts the first wavelength (L1) at least partially into radiation having a different frequency. The radiation spectrum emitted by the lamp (1) during operation is metameric with respect to a black body spectrum. Using such a lamp, it is possible to select the first wavelength and the second wavelength such that at the same time a high color rendition quality and high efficiency of the lamp can be achieved.
摘要翻译：在灯（1）的至少一个实施例中，所述灯包括至少一个光电半导体部件（2），所述光电半导体部件在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射，其中所述第一波长（L1）和所述第二波长（L2）彼此不同并且在500nm以下，特别是在200nm与500nm之间。灯（1）还包括至少一个转换装置（3），其将第一波长（L1）至少部分地转换成具有不同频率的辐射。灯（1）在工作期间发出的辐射光谱是关于黑体光谱的同质异构体。使用这样的灯，可以选择第一波长和第二波长，使得同时可以实现灯的高色彩再现质量和高效率。

37. 发明公开

EP1871928A1 METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTRATES, AND DEVICES BASED THEREON 有权转让
标题翻译：用于生产III-N层，底物含III-N层和它们的用途在半导体器件中
公开(公告)号：EP1871928A1
公开(公告)日：2008-01-02
申请号：EP06753501.3
申请日：2006-05-05
申请人： Forschungsverbund Berlin e.V. , Osram Opto Semiconductors GmbH , Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： SCHOLZ, Ferdinand , BRÜCKNER, Peter , HABEL, Frank , PETER, Matthias , KÖHLER, Klaus
IPC分类号： C30B29/40 , H01L21/205 , C30B25/02
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10S117/915 , Y10T428/24355
摘要： An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

38. 发明授权

EP2519980B1 LICHTEMITTIERENDER HALBLEITERCHIP 有权转让
公开(公告)号：EP2519980B1
公开(公告)日：2019-04-03
申请号：EP10798567.3
申请日：2010-12-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , WALTER, Alexander , TAKI, Tetsuya , OFF, Jürgen , BUTENDEICH, Rainer , HERTKORN, Joachim
IPC分类号： H01L33/04 , H01L33/14 , H01L33/06 , H01L33/38

39. 发明公开

EP2338182A1 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 有权转让
标题翻译：光电半导体器件
公开(公告)号：EP2338182A1
公开(公告)日：2011-06-29
申请号：EP09748013.1
申请日：2009-09-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： STRASSBURG, Martin , HÖPPEL, Lutz , PETER, Matthias , ZEHNDER, Ulrich , TAKI, Tetsuya , LEBER, Andreas , BUTENDEICH, Rainer , BAUER, Thomas
IPC分类号： H01L33/40
CPC分类号： H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic semiconductor component, comprising a semiconductor layer sequence (3) which is based on a nitride compound semiconductor and comprises an n-doped region (4), a p-doped region (8), and an active zone (5) disposed between the n-doped region (4) and the p-doped region (8). The p-doped region (8) includes a p-contact layer (7) comprising In
x Al
y Ga
1-x-y N, where 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, and x + y ≤ 1. The p-contact layer (7) adjoins a connecting layer (9) made of a metal, a metal alloy, or a transparent conductive oxide, wherein on an interface to the connecting layer (9) the p-contact layer (7) comprises first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation.

40. 发明公开

EP2245668A1 OPTOELEKTRONISCHES MODUL UND PROJEKTIONSVORRICHTUNG MIT DEM OPTOELEKTRONISCHEN MODUL 有权转让
标题翻译：光伏组件模块化应用程序万用表MEM DEM OPTOELEKTRONISCHEN MODUL
公开(公告)号：EP2245668A1
公开(公告)日：2010-11-03
申请号：EP09705404.3
申请日：2009-01-26
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETERSEN, Kirstin , GRÖTSCH, Stefan , MILLER, Stephan , SPATH, Günter , LINDER, Norbert , EISERT, Dominik , PETER, Matthias
IPC分类号： H01L27/32
摘要： An optoelectronic module (11) for emitting monochromatic radiation in the visible wavelength region is provided. The module (11) comprises a plurality of light-emitting diode chips (1), which generate UV radiation. The UV radiation is converted by a wavelength converter (2) into light in the visible region, such as into green light. By using two selectively reflecting and transmitting filters (3, 4), the light decoupling of the module (11) is optimized. Said module (11) can be used as a light source in a projection device (12).
摘要翻译：指定用于发出可见光波长范围的单色辐射的光电子模块。该模块具有产生UV辐射的多个发光二极管芯片。通过波长转换器将紫外线辐射转换成可见光范围的光，例如变成绿光。通过使用两个选择性反射和发射滤波器来优化来自模块的光耦合。该模块可以用作投影设备中的光源。

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