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31. 发明授权

US08572428B2 Storage apparatus and control method for storage apparatus 有权
标题翻译：存储装置的存储装置和控制方法
公开(公告)号：US08572428B2
公开(公告)日：2013-10-29
申请号：US13279491
申请日：2011-10-24
申请人： Satoru Nishita , Yukio Nishimura
发明人： Satoru Nishita , Yukio Nishimura
IPC分类号： G06F11/00
CPC分类号： G06F11/1443 , G06F11/10 , G06F11/2089 , H04L1/18
摘要： A first controller stores externally input data to a memory of the first controller, reads data stored in the memory of the first controller and transmits the data to a second controller through a first controller bridge, detects a failure at the first controller bridge in transmission of the data. The second controller receives the data through a second controller bridge, writes the received data into a memory of the second controller, and determines whether the failure is caused by the first controller if a failure occurs in the memory controller and the second controller bridge. If a failure is detected in the first controller and the second controller and the failure is caused by the first controller, the first controller transmits the data causing the failure during transmission through the first controller bridge and the second controller receives the data through the second controller bridge.
摘要翻译：第一控制器将外部输入数据存储到第一控制器的存储器中，读取存储在第一控制器的存储器中的数据，并通过第一控制器桥将数据发送到第二控制器，在第一控制器桥传输期间检测故障数据。第二控制器通过第二控制器桥接器接收数据，将接收到的数据写入第二控制器的存储器，并且如果在存储器控制器和第二控制器桥中发生故障，则确定是否由第一控制器引起故障。如果在第一控制器和第二控制器中检测到故障，并且由第一控制器引起故障，则第一控制器在通过第一控制器桥传输期间发送导致故障的数据，并且第二控制器通过第二控制器接收数据桥。

32. 发明授权

US08431332B2 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern 有权
标题翻译：用于形成用于浸渍曝光的上层膜的组合物，用于浸渍曝光的上层膜，以及形成光致抗蚀剂图案的方法
公开(公告)号：US08431332B2
公开(公告)日：2013-04-30
申请号：US12680200
申请日：2008-09-10
申请人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
发明人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
IPC分类号： G03F7/11 , G03F7/09 , G03F7/38
CPC分类号： G03F7/11 , G03F7/2041
摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].
摘要翻译：本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。用于形成上层膜的组合物包括树脂成分和溶剂。树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式（2-1）和（2-2）。（1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

33. 发明授权

US07951524B2 Self-topcoating photoresist for photolithography 有权
标题翻译：用于光刻的自表面光刻胶
公开(公告)号：US07951524B2
公开(公告)日：2011-05-31
申请号：US12023108
申请日：2008-01-31
申请人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
发明人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/2041 , C08F220/22 , G03F7/0046 , G03F7/0397 , G03F7/11 , Y10S430/108 , Y10S430/111
摘要： Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要翻译：光刻胶添加剂聚合物和光致抗蚀剂制剂，可用于浸没式光刻，而不使用额外的面漆。抗蚀剂组合物包括光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和光致抗蚀剂添加剂聚合物。还有一种使用包括光致抗蚀剂添加剂聚合物的光致抗蚀剂制剂的方法。

34. 发明申请

US20100040974A1 UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权
标题翻译：上层膜成膜组合物及形成光电子图案的方法
公开(公告)号：US20100040974A1
公开(公告)日：2010-02-18
申请号：US12442377
申请日：2007-09-21
申请人： Daita Kouno , Hiromitsu Nakashima , Yukio Nishimura
发明人： Daita Kouno , Hiromitsu Nakashima , Yukio Nishimura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/095 , G03F7/11 , G03F7/2041 , H01L21/0276
摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.
摘要翻译：在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成上层膜与水的后退接触角为70°以上。本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案抑制缺陷，能够抑制斑点缺陷。

35. 发明申请

US20100021852A1 COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN 有权
标题翻译：用于形成上层膜的组合物和形成光电子图案的方法
公开(公告)号：US20100021852A1
公开(公告)日：2010-01-28
申请号：US12445152
申请日：2007-10-11
申请人： Yukio Nishimura , Norihiko Sugie , Hiromitsu Nakashima , Norihiro Natsume , Daita Kouno
发明人： Yukio Nishimura , Norihiko Sugie , Hiromitsu Nakashima , Norihiro Natsume , Daita Kouno
IPC分类号： G03F7/00 , C09D133/04
CPC分类号： G03F7/11 , G03F7/2041
摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.
摘要翻译：一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。

36. 发明授权

US07202016B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US07202016B2
公开(公告)日：2007-04-10
申请号：US11116269
申请日：2005-04-28
申请人： Masaaki Miyaji , Tomoki Nagai , Yuji Yada , Jun Numata , Yukio Nishimura , Masafumi Yamamoto , Hiroyuki Ishii , Toru Kajita , Tsutomu Shimokawa
发明人： Masaaki Miyaji , Tomoki Nagai , Yuji Yada , Jun Numata , Yukio Nishimura , Masafumi Yamamoto , Hiroyuki Ishii , Toru Kajita , Tsutomu Shimokawa
IPC分类号： G03F7/004
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/122
摘要： A chemically amplified radiation-sensitive resin composition comprising a specific copolymer and a photoacid generator, wherein the copolymer contains the following recurring unit (1) and/or the recurring unit (2), and the recurring unit (3-1), wherein R1 is a hydrogen or methyl, R2 is a C4-10 tertiary alkyl, R3 and R4 are a hydrogen, C1-12 alkyl, C6-15 aromatic, C1-12 alkoxyl, or R3 and R4 may form, in combination and together with the nitrogen atom with which the R3 and R4 groups bond, a C3-15 cyclic structure, provided that R3 and R4 are not a hydrogen atom at the same time. The composition effectively responds to various radiations, exhibits excellent resolution and pattern configuration and minimal iso-dense bias, and can form fine patterns at a high precision and in a stable manner.
摘要翻译：一种包含特定共聚物和光致酸发生剂的化学放大的辐射敏感性树脂组合物，其中共聚物含有以下重复单元（1）和/或重复单元（2）和重复单元（3-1），

37. 发明申请

US20060261518A1 Use of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing 失效
标题翻译：使用步进和闪光压印光刻技术直接刻印用于双镶嵌加工的介质材料
公开(公告)号：US20060261518A1
公开(公告)日：2006-11-23
申请号：US11363071
申请日：2006-02-27
申请人： C. Willson , Frank Palmieri , Yukio Nishimura , Stephen Johnson , Michael Stewart
发明人： C. Willson , Frank Palmieri , Yukio Nishimura , Stephen Johnson , Michael Stewart
IPC分类号： B29C59/02 , B29C35/08 , B28B11/08
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76807 , H01L21/76828
摘要： In some embodiments, the present invention is directed to methods that involve the combination of step-and-flash imprint lithography (SFIL) with a multi-tier template to simultaneously pattern multiple levels of, for example, an integrated circuit device. In such embodiments, the imprinted material generally does not serve or act as a simple etch mask or photoresist, but rather serves as the insulation between levels and lines, i.e., as a functional dielectric material. After imprinting and a multiple step curing process, the imprinted pattern is filled with metal, as in dual damascene processing. Typically, the two printed levels will comprise a “via level,” which is used to make electrical contact with the previously patterned under-level, and a “wiring level.” The present invention provides for the direct patterning of functional materials, which represents a significant departure from the traditional approach to microelectronics manufacturing.
摘要翻译：在一些实施例中，本发明涉及涉及步进和快速压印光刻（SFIL）与多层模板的组合以同时对例如集成电路器件的多个级别进行图案化的方法。在这样的实施例中，压印材料通常不起到或用作简单的蚀刻掩模或光致抗蚀剂的作用，而是用作层和线之间的绝缘，即功能介电材料。在印迹和多步固化过程之后，印刷图案充满金属，如在双镶嵌加工中。通常，两个印刷电平将包括用于与先前图案化的欠电平进行电接触的“通孔电平”和“接线电平”。本发明提供了功能材料的直接图案化，其代表了与传统的微电子制造方法的显着不同。

38. 发明授权

US06961761B2 System and method for partitioning a computer system into domains 有权
标题翻译：将计算机系统划分为域的系统和方法
公开(公告)号：US06961761B2
公开(公告)日：2005-11-01
申请号：US09861293
申请日：2001-05-17
申请人： Kazunori Masuyama , Patrick N. Conway , Hitoshi Oi , Jeremy Farrell , Sudheer Miryala , Yukio Nishimura , Prabhu Murthy
发明人： Kazunori Masuyama , Patrick N. Conway , Hitoshi Oi , Jeremy Farrell , Sudheer Miryala , Yukio Nishimura , Prabhu Murthy
IPC分类号： G06F15/177 , G06F9/50 , H04L12/24
CPC分类号： H04L41/082 , H04L41/0803 , H04L41/12
摘要： A domain partitioning system for a multi-node computer system is disclosed. An external server manager is coupled to a domain configuration unit by a dedicated sideband channel. The server manager has write privileges to the domain configuration unit that allows the server manager to control the domain partitioning and the routing tables. None of the domains of the computer system are permitted write access to the domain configuration unit. In one embodiment, the domain configuration unit is a set of domain partition registers and routing table registers coupled to a system interconnect.
摘要翻译：公开了一种用于多节点计算机系统的域分割系统。外部服务器管理器通过专用边带信道耦合到域配置单元。服务器管理员对域配置单元具有写入权限，允许服务器管理器控制域分区和路由表。计算机系统的任何域都不允许对域配置单元进行写访问。在一个实施例中，域配置单元是耦合到系统互连的一组域分区寄存器和路由表寄存器。

39. 发明授权

US06933094B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US06933094B2
公开(公告)日：2005-08-23
申请号：US09953941
申请日：2001-09-18
申请人： Masaaki Miyaji , Tomoki Nagai , Yuji Yada , Jun Numata , Yukio Nishimura , Masafumi Yamamoto , Hiroyuki Ishii , Toru Kajita , Tsutomu Shimokawa
发明人： Masaaki Miyaji , Tomoki Nagai , Yuji Yada , Jun Numata , Yukio Nishimura , Masafumi Yamamoto , Hiroyuki Ishii , Toru Kajita , Tsutomu Shimokawa
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/122
摘要： A chemically amplified radiation-sensitive resin composition comprising a specific copolymer and a photoacid generator, wherein the copolymer contains the following recurring unit (1) and/or the recurring unit (2), and the recurring unit (3-1), wherein R1 is a hydrogen or methyl, R2 is a C4-10 tertiary alkyl, R3and R4 are a hydrogen, C1-12 alkyl, C6-15 aromatic, C1-12 alkoxyl, or R3 and R4 may form, in combination and together with the nitrogen atom with which the R3 and R4 groups bond, a C3-15 cyclic structure, provided that R3 and R4 are not a hydrogen atom at the same time. The composition effectively responds to various radiations, exhibits excellent resolution and pattern configuration and minimal iso-dense bias, and can form fine patterns at a high precision and in a stable manner.
摘要翻译：包含特定共聚物和光酸产生剂的化学放大的辐射敏感性树脂组合物，其中所述共聚物包含以下重复单元（1）和/或重复单元（2）和重复单元（3-1），其中R 1是氢或甲基，R 2是C 4-10叔烷基，R 3和R 3 H 4是氢，C 1-12烷基，C 6-15芳族，C 1-12烷氧基，，或R 3和R 4可以与R 3和R 4的氮原子组合形成，基团键合，C 3-15-15环状结构，条件是R 3和R 4不是氢原子同时。该组合物有效响应各种辐射，显示出优异的分辨率和图案配置以及最小的等密度偏差，并能以高精度和稳定的方式形成精细图案。

40. 发明授权

US06800419B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US06800419B2
公开(公告)日：2004-10-05
申请号：US10369674
申请日：2003-02-21
申请人： Akimasa Soyano , Hiroyuki Ishii , Hidemitsu Ishida , Motoyuki Shima , Yukio Nishimura
发明人： Akimasa Soyano , Hiroyuki Ishii , Hidemitsu Ishida , Motoyuki Shima , Yukio Nishimura
IPC分类号： G03F7039
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A radiation-sensitive resin composition comprising: (A) an alkali insoluble or scarcely alkali-soluble resin having an acid-dissociable protecting group of the following formula [I], wherein R1 groups are monovalent alicyclic hydrocarbon groups or alkyl groups, provided that at least one of the R1 groups is the monovalent alicyclic hydrocarbon group, or any two of the R1 groups and the carbon atom form a divalent alicyclic hydrocarbon group, (B) a photoacid generator, and (C) propylene glycol monomethyl ether acetate, &ggr;-butyrolactone, and cyclohexanone as solvents. The resin composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays and exhibits excellent film thickness uniformity and storage stability.
摘要翻译：一种辐射敏感性树脂组合物，其包含：（A）具有下式[I]的酸解离保护基的碱不溶性或几乎不溶的碱溶性树脂，其中R 1为一价脂环族烃基或烷基，条件是R 1基团中的至少一个为一价脂环族烃基，或者R 1基团和碳原子中的任何两个形成二价脂环族烃基，（B）光致酸发生剂和（C ）丙二醇单甲醚乙酸酯，γ-丁内酯和环己酮作为溶剂。树脂组合物可用作用于使用深紫外线的微细加工的化学增幅抗蚀剂，并且显示出优异的膜厚均匀性和储存稳定性。

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