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31. 发明专利

JP2012064776A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2012064776A
公开(公告)日：2012-03-29
申请号：JP2010208058
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TADAOMI , KITAGAWA EIJI , HASHIMOTO YUTAKA , JIA DA DOU , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , NAGAMINE MAKOTO , KAI TADASHI , YODA HIROAKI
IPC分类号： H01L27/105 , G11B5/39 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which has perpendicular magnetic anisotropy and is capable of developing a larger magnetoresistive effect.SOLUTION: A magnetoresistive element includes: a first ferromagnetic layer 2 having an axis of easy magnetization in a direction perpendicular to a film surface; a second ferromagnetic layer 10 having an axis of easy magnetization in a direction perpendicular to the film surface; a non-magnetic layer 6 provided between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer 4 provided between the first ferromagnetic layer and the non-magnetic layer; and a second interfacial magnetic layer 8 provided between the second ferromagnetic layer and the non-magnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film 4a provided on the first ferromagnetic layer side, a second interfacial magnetic film 4c provided on the non-magnetic layer side and having a composition different from the first interfacial magnetic film, and a first non-magnetic film 4b provided between the first interfacial magnetic film and the second interfacial magnetic film. By applying a current flow through the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, the magnetization direction of one of the first ferromagnetic layer and the second ferromagnetic layer is made variable.
摘要翻译：要解决的问题：提供具有垂直磁各向异性并且能够产生更大磁阻效应的磁阻效应元件。解决方案：磁阻元件包括：在垂直于膜表面的方向上具有容易磁化的轴的第一铁磁层2; 第二铁磁层10在垂直于膜表面的方向上具有容易磁化的轴线; 设置在第一铁磁层和第二铁磁层之间的非磁性层6; 设置在第一铁磁层和非磁性层之间的第一界面磁性层4; 以及设置在第二铁磁层和非磁性层之间的第二界面磁性层8。第一界面磁性层包括设置在第一铁磁性层侧的第一界面磁性膜4a，设置在非磁性层一侧且具有与第一界面磁性膜不同的组成的第二界面磁性膜4c， - 磁膜4b，设置在第一界面磁性膜和第二界面磁性膜之间。通过施加电流流过第一铁磁层和第二铁磁层之间的非磁性层，第一铁磁层和第二铁磁层之一的磁化方向是可变的。版权所有（C）2012，JPO＆INPIT

32. 发明专利

JP2010232447A Magnetoresistive effect element and magnetic memory 审中-公开
标题翻译：磁电效应元件和磁记忆
公开(公告)号：JP2010232447A
公开(公告)日：2010-10-14
申请号：JP2009078799
申请日：2009-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , OSEGI JUNICHI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI , KAI TADASHI , IKEGAWA SUMIO
IPC分类号： H01L43/08 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce the film thickness of a magnetic layer used for canceling a leakage magnetic field applied to a storage layer.
SOLUTION: A magnetoresistive effect element includes a storage layer 2 having magnetic anisotropy in a direction roughly perpendicular to a film surface and having a magnetization direction that is variable by the action of spin-polarized electrons, a first non-magnetic layer 4 provided on the storage layer, a reference layer 6 provided on the first non-magnetic layer and having magnetic anisotropy in a direction roughly perpendicular to the film surface, an anti-ferromagnetic layer 8 provided on the reference layer, and a ferromagnetic layer 10 provided on the anti-ferromagnetic layer and having magnetic anisotropy in a direction roughly perpendicular to the film surface and magnetization that is anti-parallel to the magnetization direction of the reference layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：减少用于消除施加到存储层的泄漏磁场的磁性层的膜厚度。解决方案：磁阻效应元件包括在大致垂直于膜表面的方向上具有磁各向异性并且具有可通过自旋极化电子的作用而变化的磁化方向的存储层2，第一非磁性层4 设置在存储层上的参考层6，设置在第一非磁性层上并且在大致垂直于膜表面的方向上具有磁各向异性，设置在参考层上的反铁磁层8和设置在基准层上的铁磁层10 在反铁磁层上并且在大致垂直于膜表面的方向上具有磁各向异性和与参考层的磁化方向反平行的磁化。版权所有（C）2011，JPO＆INPIT

33. 发明专利

JP2010219412A Magnetoresistive element and magnetic random access memory 有权
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：JP2010219412A
公开(公告)日：2010-09-30
申请号：JP2009066274
申请日：2009-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , YODA HIROAKI , KAI TADASHI , AIKAWA HISANORI , NISHIYAMA KATSUYA , OSEGI JUNICHI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/08 , B82Y25/00 , G11C7/04 , G11C11/161 , G11C11/1675 , H01F10/126 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To make temperature dependence of a spin implantation inversion current small, and to perform stable writing by spin implantation flux reversal. SOLUTION: The magnetoresistive element includes: a magnetic recording layer 2 having a magnetic layer whose magnetization direction is substantially perpendicular to a film surface and changeable; a magnetic reference layer 6 whose magnetization direction is substantially perpendicular to a film surface and is fixed, or which has a larger flux reversal magnetic field than the magnetic recording layer; and a nonmagnetic layer 4 provided between the magnetic recording layer and magnetic reference layer. The magnetic recording layer includes a first magnetic layer 2 2 having vertical magnetic anisotropy and a second magnetic layer 2 1 having in-plane magnetic anisotropy and exchange-coupled with the first magnetic layer, wherein the second magnetic layer has lower Curie temperature than the first magnetic layer, and a current is made to flow between the magnetic recording layer and magnetic reference layer in a direction substantially perpendicular to the film surface to make spin-polarized electrons act on the magnetic recording layer, thereby changing the direction of magnetization of the magnetic recording layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：使自旋注入反转电流的温度依赖性小，并通过自旋注入磁通反转来进行稳定的写入。解决方案：磁阻元件包括：磁记录层2，其磁化方向基本上垂直于膜表面并且是可变的磁性层; 磁性参考层6，其磁化方向基本上垂直于膜表面并被固定，或者具有比磁记录层更大的通量反转磁场; 以及设置在磁记录层和磁参考层之间的非磁性层4。磁记录层包括具有垂直磁各向异性的第一磁性层2 2 和具有面内磁各向异性并与第一磁性交换耦合的第二磁性层2 层，其中所述第二磁性层具有比所述第一磁性层更低的居里温度，并且使电流在基本上垂直于所述膜表面的方向上在所述磁记录层和所述磁性参考层之间流动，以使自旋极化电子起作用磁记录层，从而改变磁记录层的磁化方向。版权所有（C）2010，JPO＆INPIT

34. 发明专利

JP2010021580A Magneto-resistance effect device, magnetic random access memory, electronic card, electronic apparatus, production process of magneto-resistance effect device, and production process of magnetic random access memory 有权
标题翻译：磁阻效应器件，磁性随机存取存储器，电子卡，电子设备，磁阻效应器件的生产过程以及磁性随机访问存储器的生产过程
公开(公告)号：JP2010021580A
公开(公告)日：2010-01-28
申请号：JP2009242854
申请日：2009-10-21
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NAKAYAMA MASAHIKO , KAI TADASHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To attain a large capacity while maintaining a high thermal disturbance resistance of bit information even in microfabrication. SOLUTION: The magneto-resistance effect device includes a non-magnetic layer 13 between a recording layer 11 having vertical magnetization and a fixed layer 12, a magnetic metal layer 18 between the non-magnetic layer 13 and the fixed layer 12, and a magnetic metal layer 19 between the non-magnetic layer 13 and the recording layer 11. The non-magnetic layer 13 includes MgO with the (001) plane oriented. The magnetic metal layers 18, 19 comprise a magnetic material with the (001) plane oriented, selected from the group consisting of Co, Fe, a Co-Fe alloy, and a Fe-Ni alloy. At least one of the recording layer 11 and the fixed layer 12 includes a layer including at least one selected from the group consisting of Fe, Co and Ni and a layer including at least one selected from the group consisting of Cr, Pt, Pd, Ir, Rh, Ru, Os, Re, Au and Cu laminated alternately. The dumping constant of the magnetic metal layer 19 is smaller than that of the recording layer 11. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在微细加工中，也能够保持比特信息的高耐热干扰性而获得大容量。解决方案：磁阻效应器件包括具有垂直磁化的记录层11和固定层12之间的非磁性层13，非磁性层13和固定层12之间的磁性金属层18，以及非磁性层13和记录层11之间的磁性金属层19.非磁性层13包括（001）面取向的MgO。磁性金属层18,19包括从（001）面取向的磁性材料，其选自Co，Fe，Co-Fe合金和Fe-Ni合金。记录层11和固定层12中的至少一个包括含有选自Fe，Co和Ni中的至少一种的层和包含选自Cr，Pt，Pd， Ir，Rh，Ru，Os，Re，Au和Cu交替层压。磁性金属层19的倾倒常数小于记录层11的倾倒常数。（C）2010，JPO＆INPIT

35. 发明专利

JP2007096092A Magnetoresistive element 有权
标题翻译：磁电元件
公开(公告)号：JP2007096092A
公开(公告)日：2007-04-12
申请号：JP2005285054
申请日：2005-09-29
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEGAWA SUMIO , NAKAYAMA MASAHIKO , KAI TADASHI , KITAGAWA EIJI , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/30 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To reduce a switching magnetic field and to prevent erroneous writing. SOLUTION: A magnetoresistive element comprises storage layer including first and second ferromagnetic layers and a non-magnetic layer disposed between the first and second ferromagnetic layers, and a strength of exchange coupling of the first and second ferromagnetic layers is set to open an asteroid curve in the direction of hard axis. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少开关磁场并防止写入错误。解决方案：磁阻元件包括包含第一和第二铁磁层的存储层和设置在第一和第二铁磁层之间的非磁性层，并且第一和第二铁磁层的交换耦合强度被设定为打开小行星曲线在硬轴方向。版权所有（C）2007，JPO＆INPIT

36. 发明专利

JP2007096074A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2007096074A
公开(公告)日：2007-04-12
申请号：JP2005284760
申请日：2005-09-29
申请人： Nec Corp , Toshiba Corp , 日本電気株式会社 , 株式会社東芝
发明人： AIKAWA HISANORI , KAI TADASHI , SUZUKI AKIHIRO , NEHASHI RYUSUKE
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： Y02P20/52
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory capable of decreasing a write current while suppressing miswriting. SOLUTION: The magnetic memory includes a first wire 20, a second wire 30 in crossing with the first wire, and a magneto-resistance effect element 1. The magneto-resistance effect element includes a magnetization fixed layer 4 the direction of magnetization of which is fixed; and a magnetization free layer 2 including at least two or more magnetic layers 2 1 , 2 2 each of planar shape of which comprises a main body 2a the size in the axial direction of easy magnetization is longer than the size in the axial direction of hard magnetization and projections 2b provided in the axial direction of hard magnetization in the middle of the main body 2a, and a nonmagnetic layer 2 3 located between the magnetic layers 2 1 , 2 2 , and the direction of the magnetization of the magnetic layers of which varies with an external magnetic field. The magneto-resistance effect element is arranged in such a way that the direction of the axis of easy magnetization of the magnetization free layer is tilted with respect to the first and second wires, and a ratio of the length in the axial direction of hard magnetization to the length in the axial direction of easy magnetization in each of the magnetic layers of the magnetization free layer is greater than 1 and equal to or less than 1.5. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够减小写入电流同时抑制误写入的磁存储器。解决方案：磁存储器包括第一线20，与第一线交叉的第二线30和磁阻效应元件1.磁阻效应元件包括磁化固定层4磁化方向其中固定; 以及包括至少两个以上的磁性层2的无磁化层2，所述磁性层2的平面形状中的至少两个以上的磁性层2 2 2 包括：主体2a，其轴向尺寸容易磁化的长度大于在主体2a的中央处设置在硬磁化轴向的硬磁化和突起2b的轴向尺寸以及位于主体2a的中间的非磁性层2 3 磁性层2 2 2 ，并且其磁性层的磁化方向随外部磁场而变化。磁阻效应元件以这样的方式设置，使得磁化自由层的容易磁化轴线的方向相对于第一和第二导线倾斜，并且硬磁化的轴向长度的比率在磁化自由层的每个磁性层中易磁化的轴向长度大于1且等于或小于1.5。版权所有（C）2007，JPO＆INPIT

37. 发明专利

JP2007027424A Magneto-resistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2007027424A
公开(公告)日：2007-02-01
申请号：JP2005207628
申请日：2005-07-15
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KAI TADASHI , IKEGAWA SUMIO , FUKUZUMI YOSHIAKI , KISHI TATSUYA
IPC分类号： H01L43/08 , G11C11/15 , H01F10/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce erroneous writing and improve thermal stability. SOLUTION: A magneto-resistance effect element, a magneto-resistance effect element 10, is provided with a magnetization fixed layer 11 having a fixed magnetization direction, a magnetization free layer 13 having a changing magnetization direction, and a non-magnetic layer 12 provided between the magnetization fixed layer 11 and the magnetization free layer 13. The magnetization free layer 13 has an extending portion 10a extending in a first direction, and projecting portions 10b, 10c each projecting from a part other than an end of the side surface of the extending portion 10a in a second direction perpendicular to the first direction. The plane shape of the magnetization free layer 13 has 180-degree rotation symmetry and does not have a reflection symmetry. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少写入错误并提高热稳定性。解决方案：磁阻效应元件，磁阻效应元件10设置有具有固定的磁化方向的磁化固定层11，具有变化的磁化方向的磁化自由层13和非磁性的层12设置在磁化固定层11和磁化自由层13之间。磁化自由层13具有沿第一方向延伸的延伸部分10a，以及从除侧面之外的部分突出的突出部分10b，10c 延伸部分10a的表面在垂直于第一方向的第二方向上。磁化自由层13的平面形状具有180度的旋转对称性，并且不具有反射对称性。版权所有（C）2007，JPO＆INPIT

38. 发明专利

JP2003313659A Sputtering target for recording medium and magnetic recording medium 有权
标题翻译：用于记录介质和磁记录介质的溅射目标
公开(公告)号：JP2003313659A
公开(公告)日：2003-11-06
申请号：JP2002119888
申请日：2002-04-22
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIOKA NAOMI , KIKITSU SATORU , KAI TADASHI , NAGASE TOSHIHIKO , MAEDA TOMOYUKI , AKIYAMA JUNICHI , AIKAWA HISANORI , SUZUKI YUKINOBU , WATANABE KOICHI , WATANABE TAKASHI , ISHIGAMI TAKASHI
IPC分类号： C22C32/00 , B22F3/00 , C22C5/04 , C22C19/07 , C22C38/00 , C23C14/34 , G11B5/64 , G11B5/65 , G11B5/738 , G11B5/851
摘要： PROBLEM TO BE SOLVED: To anneal a sputtered magnetic alloy film at a relatively low temperature in order to convert the film into an ordered phase alloy film having an L 10 structure which is used for a recording layer of a magnetic recording medium. SOLUTION: The sputtering target for recording medium includes a sintered magnetic alloy compact containing at least one element selected from Fe and Co, at least one element selected from Pt and Pd and, if necessary, additive components. An oxygen content of this sintered target is 1,000 ppm or less. The magnetic recording medium formed on a substrate comprises a recording layer, which is made of a magnetic alloy having an ordered phase of the L 10 structure, and a protection layer formed on the recording layer to cover it. An atomic percentage of a residual oxygen content in the recording layer is 30% or less. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了将薄膜转化为具有用于记录的L 10 结构的有序相合金膜，在相对低的温度下对溅射的磁性合金膜进行退火磁记录介质层。解决方案：用于记录介质的溅射靶包括含有选自Fe和Co中的至少一种元素，至少一种选自Pt和Pd的元素以及必要时添加成分的烧结磁性合金压块。该烧结靶的氧含量为1000ppm以下。形成在基板上的磁记录介质包括由具有L 10 结构的有序相的磁性合金制成的记录层，以及形成在记录层上的保护层以覆盖该记录层。记录层中残留氧含量的原子百分比为30％以下。版权所有（C）2004，JPO

39. 发明专利

JP2003085702A Magnetic recording device 有权
标题翻译：磁记录装置
公开(公告)号：JP2003085702A
公开(公告)日：2003-03-20
申请号：JP2001279858
申请日：2001-09-14
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKITSU SATORU , KAI TADASHI , NAGASE TOSHIHIKO , MAEDA TOMOYUKI , AKIYAMA JUNICHI
IPC分类号： G11B5/66 , G11B5/02 , G11B5/673 , G11B5/738 , G11B11/10
摘要： PROBLEM TO BE SOLVED: To provide a thermal assist magnetic recording device wherein the limit of thermal fluctuation is overcome, and there are no magnetization losses due to the acceleration of thermal fluctuation. SOLUTION: This magnetic recording device is provided with a nonmagnetic substrate, a function layer made of a magnetic material having Curie temperature Tc FL and a magnetic anisotropic energy density Ku FL, a recording layer made of magnetic particles having Curie temperature Tc RL higher than the Curie temperature Tc FL and a recording temperature Tw and a magnetic anisotropic energy density Ku RL of 5×10 erg/cc or higher, and a nonmagnetic material formed therebetween, a heating means for heating the function layer and the recording layer to the recording temperature Tw, and a magnetic recording means for recording signal magnetization by applying a magnetic field to the recording layer.
摘要翻译：要解决的问题：提供一种克服热波动极限的热辅助磁记录装置，并且由于热波动的加速而没有磁化损失。解决方案：该磁记录装置设置有非磁性基板，由具有居里温度Tc FL和磁各向异性能量密度Ku FL的磁性材料制成的功能层，由居里温度Tc RL高于居里温度Tc FL和记录温度Tw以及5×10 6 g / cc以上的磁各向异性能量密度Ku RL和形成在其间的非磁性材料，加热功能层和记录层的加热装置记录温度Tw和通过向记录层施加磁场来记录信号磁化的磁记录装置。

40. 发明专利

JP2003016620A Magnetic recording medium, magnetic recording device and method for magnetic recording 审中-公开
标题翻译：磁记录介质，磁记录装置及磁记录方法
公开(公告)号：JP2003016620A
公开(公告)日：2003-01-17
申请号：JP2001197771
申请日：2001-06-29
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKITSU SATORU , KAI TADASHI , AKIYAMA JUNICHI
IPC分类号： G11B5/65 , G11B5/00 , G11B5/012 , G11B5/02 , G11B5/265 , G11B5/39 , G11B5/48 , G11B5/596 , G11B5/64 , G11B5/66 , G11B5/738 , G11B7/00 , G11B11/10 , H01F10/30
CPC分类号： G11B5/66 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/012 , G11B5/02 , G11B5/1278 , G11B5/3916 , G11B5/3925 , G11B5/488 , G11B5/59683 , G11B5/743 , G11B5/746 , G11B5/82 , G11B7/00 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , G11B2005/3996 , Y10T428/24942 , Y10T428/31
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording medium, a magnetic recording device and a method for magnetic recording in which thermal fluctuation is suppressed and the recording density can be improved. SOLUTION: The thermal fluctuation is suppressed and the recording density can be significantly improved by providing the magnetic recording medium having the following features. The medium has a functional layer (12) containing a magnetic material and a recording layer (11) containing a magnetic material and deposited on the functional layer. The recording layer contains a plurality of magnetic particles (51) and a nonmagnetic material present among the magnetic particles. The functional layer and the recording layer generate the exchange coupling interaction at room temperature in the direction almost perpendicular to each other.
摘要翻译：要解决的问题：提供一种磁记录介质，磁记录装置和磁记录方法，其中热波动被抑制并且可以提高记录密度。解决方案：通过提供具有以下特征的磁记录介质，抑制热波动并且可以显着改善记录密度。介质具有含有磁性材料的功能层（12）和含有磁性材料并沉积在功能层上的记录层（11）。记录层包含存在于磁性颗粒中的多个磁性颗粒（51）和非磁性材料。功能层和记录层在几乎垂直于彼此的方向上在室温下产生交换耦合相互作用。

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