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31. 发明授权

US08456882B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08456882B2
公开(公告)日：2013-06-04
申请号：US13415261
申请日：2012-03-08
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C5/08 , G11C11/06 , G11C11/14 , G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

32. 发明申请

US20140175577A1 METHOD AND SYSTEM FOR PROVIDING VERTICAL SPIN TRANSFER SWITCHED MAGNETIC JUNCTIONS AND MEMORIES USING SUCH JUNCTIONS 有权
标题翻译：用于提供垂直转子切换磁性结和使用这种结点的记忆的方法和系统
公开(公告)号：US20140175577A1
公开(公告)日：2014-06-26
申请号：US13751304
申请日：2013-01-28
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置并位于基板上的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层，非磁性间隔层和参考层与衬底形成非零角度。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

33. 发明申请

US20130154036A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS 有权
标题翻译：用于提供具有改进特性的磁性结的方法和系统
公开(公告)号：US20130154036A1
公开(公告)日：2013-06-20
申请号：US13332305
申请日：2011-12-20
申请人： Xueti Tang , Dmytro Apalkov , Steven M. Watts , Kiseok Moon , Vladimir Nikitin
发明人： Xueti Tang , Dmytro Apalkov , Steven M. Watts , Kiseok Moon , Vladimir Nikitin
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , G11C11/161 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F10/3295
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。非磁性间隔层位于被钉扎层和自由层之间。至少一个绝缘层与自由层和钉扎层中的至少一个相邻。所述至少一个磁性插入层邻接所述至少一个绝缘层。在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的写入电流通过磁性结时的磁状态。

34. 发明申请

US20120170357A1 METHOD AND SYSTEM FOR PROVIDING MULTIPLE LOGIC CELLS IN A SINGLE STACK 有权
标题翻译：用于在单个堆栈中提供多个逻辑单元的方法和系统
公开(公告)号：US20120170357A1
公开(公告)日：2012-07-05
申请号：US13031001
申请日：2011-02-18
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith
IPC分类号： G11C11/16 , G11B5/64
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，多个非磁性间隔层和多个自由层。自由层与非磁性间隔层交错。非磁性间隔层的第一非磁性间隔层位于自由层和被钉扎层之间。每个自由层配置成当写入电流通过磁结时在稳定磁状态之间切换。每个自由层具有关键的开关电流密度。一个自由层的关键开关电流密度从相邻自由层的临界开关电流密度单调变化。相邻的自由层在被钉扎层和多个自由层中的一个之间。

35. 发明申请

US20110141804A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES 有权
标题翻译：用于提供旋转传动扭矩磁记录中可用的双磁性隧道结的方法和系统
公开(公告)号：US20110141804A1
公开(公告)日：2011-06-16
申请号：US13033021
申请日：2011-02-23
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith , Steven M. Watts , David Druist
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith , Steven M. Watts , David Druist
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： G11C11/5607 , G01R33/098 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。固定层是非磁性层，并且是自固定的。在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。磁结有两个以上的稳定状态。在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

36. 发明申请

US20110102948A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES 有权
标题翻译：用于提供旋转传动扭矩磁记录中可用的双磁性隧道结的方法和系统
公开(公告)号：US20110102948A1
公开(公告)日：2011-05-05
申请号：US12609764
申请日：2009-10-30
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

37. 发明申请

US20070085068A1 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells 审中-公开
标题翻译：使用这种细胞的利用粒状自由层和磁存储器的基于旋转转移的磁存储单元
公开(公告)号：US20070085068A1
公开(公告)日：2007-04-19
申请号：US11251428
申请日：2005-10-14
申请人： Dmytro Apalkov , Zhitao Diao , Yunfei Ding , Yiming Huai
发明人： Dmytro Apalkov , Zhitao Diao , Yunfei Ding , Yiming Huai
IPC分类号： H01L47/00 , H01L29/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

38. 发明授权

US09082534B2 Magnetic element having perpendicular anisotropy with enhanced efficiency 有权
标题翻译：磁性元件具有垂直各向异性，效率提高
公开(公告)号：US09082534B2
公开(公告)日：2015-07-14
申请号：US13779734
申请日：2013-02-27
申请人： Roman Chepulskyy , Dmytro Apalkov
发明人： Roman Chepulskyy , Dmytro Apalkov
IPC分类号： H01F1/147 , H01F10/32 , G11C11/15 , H01F1/01 , G01R33/09 , B82Y25/00 , G11C11/16 , H01L43/08 , H01L43/10 , H01L27/22
CPC分类号： H01F1/01 , B82Y25/00 , G01R33/091 , G01R33/098 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01L27/228 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/115
摘要： A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.
摘要翻译：用于在STT结构（例如单个或双重MTJ结构）中形成自由层的材料组合物可以包括CoxFeyMz，其中M是有助于形成良好的晶体取向的非磁性材料，并且自由层与 MgO界面。材料M优选不分离到MgO界面，或者如果它分离到MgO界面，则其不会显着降低自由层的PMA。自由层还可包括连接层，其中M在退火期间被吸引到插入层。自由层可以包括CoxFeyMz的分级组成，其中z在自由层内变化。

39. 发明授权

US08890569B2 Method and system for providing a nonvolatile logic array 有权
标题翻译：用于提供非易失性逻辑阵列的方法和系统
公开(公告)号：US08890569B2
公开(公告)日：2014-11-18
申请号：US13557376
申请日：2012-07-25
申请人： Dmytro Apalkov , Eugene Chen , Kaveh Milaninia
发明人： Dmytro Apalkov , Eugene Chen , Kaveh Milaninia
IPC分类号： B82Y25/00 , H01L43/02 , H01L27/22 , H03K19/08 , H01L43/12
CPC分类号： H01L27/224 , H01L43/08 , H01L43/12 , Y10S977/74
摘要： A method and system provide and program a nonvolatile logic device. The nonvolatile logic device includes input and output magnetic junctions and at least one magnetic junction between the input and output magnetic junctions. The input magnetic junction includes an input junction free layer having an input junction easy axis. The input magnetic junction may be switchable using a current driven through the magnetic junction. The output magnetic junction includes an output junction free layer having an output junction easy axis. Each of the magnetic junction(s) includes a free layer having an easy axis. The input magnetic junction is magnetically coupled to the output magnetic junction through the magnetic junction(s). In some aspects, the method includes switching the magnetic moment(s) of the input magnetic junction from a first state to a second state, applying and then removing magnetic field(s) along the hard axis of the at least one magnetic junction.
摘要翻译：方法和系统提供和编程非易失性逻辑器件。非易失性逻辑器件包括输入和输出磁结以及输入和输出磁性结之间的至少一个磁结。输入磁结包括具有输入结易轴的输入结自由层。可以使用通过磁结驱动的电流来切换输入磁结。输出磁结包括具有输出结容易轴的输出结自由层。每个磁结包括具有容易轴的自由层。输入磁结通过磁结磁耦合到输出磁结。在一些方面，该方法包括将输入磁结的磁矩从第一状态切换到第二状态，施加沿着至少一个磁结的硬轴去除磁场。

40. 发明申请

US20140056060A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING SPIN-ORBIT INTERACTION BASED SWITCHING AND MEMORIES UTILIZING THE MAGNETIC TUNNELING JUNCTION 有权
标题翻译：使用基于旋转相互作用的切换和使用磁性隧道结的记忆提供磁性隧道结的方法和系统
公开(公告)号：US20140056060A1
公开(公告)日：2014-02-27
申请号：US13594824
申请日：2012-08-26
申请人： Alexey Vasilyevitch Khvalkovskiy , Dmytro Apalkov
发明人： Alexey Vasilyevitch Khvalkovskiy , Dmytro Apalkov
IPC分类号： H01L29/82 , H01L21/02 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A magnetic memory is described. The magnetic memory includes magnetic junctions and at least one spin-orbit interaction (SO) active layer. Each of the magnetic junctions includes a data storage layer that is magnetic. The SO active layer(s) are adjacent to the data storage layer of the magnetic junction. The at SO active layer(s) are configured to exert a SO torque on the data storage layer due to a current passing through the at least one SO active layer in a direction substantially perpendicular to a direction between the at least one SO active layer and the data storage layer of a magnetic junction of the plurality of magnetic junctions closest to the at least one SO active layer. The data storage layer is configured to be switchable using at least the SO torque.
摘要翻译：描述磁存储器。磁存储器包括磁结和至少一个自旋轨道相互作用（SO）活性层。每个磁结都包括磁性的数据存储层。 SO活性层与磁结的数据存储层相邻。 SO活性层被配置为在数据存储层上施加SO转矩，这是由于电流在基本上垂直于至少一个SO活性层和至少一个SO活性层之间的方向的方向上通过至少一个SO活性层所述多个磁性接头中最接近所述至少一个SO活性层的磁结的数据存储层。数据存储层被配置为可以使用至少SO转矩来切换。

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