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31. 发明申请

US20100064095A1 Flash memory system and operation method 审中-公开
标题翻译：闪存系统和操作方法
公开(公告)号：US20100064095A1
公开(公告)日：2010-03-11
申请号：US12382447
申请日：2009-03-17
申请人： Ming-Dar Chen , Chuan-Sheng Lin
发明人： Ming-Dar Chen , Chuan-Sheng Lin
IPC分类号： G06F12/08 , G06F12/00 , G06F12/02
CPC分类号： G06F12/0866 , G06F12/0855 , G06F12/0868 , G06F2212/214 , G06F2212/7201
摘要： The present invention discloses a flash memory system comprising: a cache memory, a cache memory interface, a host interface, a flash memory interface, and a microprocessor The cache memory interface contains an arbitrator for performing data bus bandwidth time sharing process to access the cache memory The host interface is used for receiving data from a host system, and storing the data into the cache memory to form ready data The flash memory interface reads the ready data from the cache memory and stores it into at least one flash memory The microprocessor is used for controlling the host interface and the flash memory interface to access the cache memory Hence, the present invention can achieve the purpose of enhancing the access efficiency and increasing the life of the flash memory
摘要翻译：本发明公开了一种闪存系统，包括：高速缓冲存储器，高速缓冲存储器接口，主机接口，闪速存储器接口和微处理器。高速缓存存储器接口包含用于执行数据总线带宽时间共享处理以访问高速缓冲存储器的仲裁器存储器主机接口用于从主机系统接收数据，并将数据存储到高速缓冲存储器中以形成就绪数据。闪存接口从缓存存储器中读取就绪数据，并将其存储到至少一个闪存中。微处理器用于控制主机接口和闪存接口以访问高速缓冲存储器。因此，本发明可以实现提高存取效率并延长闪存的使用寿命的目的

32. 发明申请

US20100313102A1 ELECTRONIC STORAGE DEVICE AND CONTROL METHOD THEREOF 有权
标题翻译：电子储存装置及其控制方法
公开(公告)号：US20100313102A1
公开(公告)日：2010-12-09
申请号：US12790786
申请日：2010-05-28
申请人： Ming-Dar Chen , Chuan-Sheng Lin
发明人： Ming-Dar Chen , Chuan-Sheng Lin
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G11C7/1006 , G06F11/1068 , G06F12/0246 , G06F2212/7207 , G11C2029/0411
摘要： An electronic storage device for connecting with a host system includes a flash memory including a number of memory segments, and a controller including an error correction segment capable of generating a first correction code and a second correction code according to a written data received by the controller. The written data, the first correction code and the second correction code are written into a memory segment of the flash memory by the controller. The first correction code is used for checking whether there is an error bit in the written data, and the second correction code is used for checking and correcting said error bit in the written data.
摘要翻译：一种用于与主机系统连接的电子存储装置，包括一个包括多个存储器段的闪速存储器，以及一个控制器，该控制器包括一个能够根据由控制器接收到的写入数据产生第一校正码和第二校正码的纠错段。写入数据，第一校正码和第二校正码由控制器写入闪速存储器的存储器段。第一校正码用于检查写入数据中是否存在错误位，并且第二校正码用于检查和校正写入数据中的所述错误位。

33. 发明授权

US08225050B2 Memory storage device and a control method thereof 有权
标题翻译：存储器存储装置及其控制方法
公开(公告)号：US08225050B2
公开(公告)日：2012-07-17
申请号：US12457402
申请日：2009-06-10
申请人： Li-Pin Chang , Ming-Dar Chen
发明人： Li-Pin Chang , Ming-Dar Chen
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7202 , G11C11/5621 , G11C11/5671 , G11C2211/5641
摘要： The present invention discloses a control method of a memory storage device which includes a high density memory. The high density memory is composed of a plurality of MSB pages and LSB pages. The major feature of the method is such that it determines the property of data by its data length, and then decides where the data is to be written according to its property.
摘要翻译：本发明公开了一种包括高密度存储器的存储器存储装置的控制方法。高密度存储器由多个MSB页面和LSB页面组成。该方法的主要特点是通过数据长度确定数据的属性，然后根据其属性决定数据的写入位置。

34. 发明申请

US20100115186A1 FLASH MEMORY DEVICE WITH WEAR-LEVELING MECHANISM AND CONTROLLING METHOD THEREOF 有权
标题翻译：具有磨损机构的闪存存储器件及其控制方法
公开(公告)号：US20100115186A1
公开(公告)日：2010-05-06
申请号：US12396547
申请日：2009-03-03
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A flash memory device with a wear-levelining mechanism includes at least one flash memory, a hot list, a bitmap, a source pointer, and a controller. The controller obtains a physical memory block with high erase count through the hot list, an erase count of the physical memory block, and an overall average erase count of the flash memory device. The controller further finds out a physical memory block which stores static data through managing the bitmap and the source pointer. The controller moves the static data to the physical memory block with high erase count, and releases the physical memory block which stores the static data to avoid the physical memory block with high erase count being worn down increasingly more seriously.
摘要翻译：具有磨损平整机构的闪存设备包括至少一个闪存，热列表，位图，源指针和控制器。控制器通过热列表获得具有高擦除次数的物理存储器块，物理存储块的擦除计数和闪存器件的总平均擦除次数。控制器还通过管理位图和源指针找出存储静态数据的物理存储块。控制器将静态数据移动到具有高擦除次数的物理存储块，并释放存储静态数据的物理存储块，以避免高擦除次数的物理存储块越来越严重。

35. 发明授权

US08909846B2 Memory storage device and control method thereof 有权
标题翻译：内存存储装置及其控制方法
公开(公告)号：US08909846B2
公开(公告)日：2014-12-09
申请号：US12320141
申请日：2009-01-21
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.
摘要翻译：提供了一种用于将更新的数据从主机写入存储器存储装置的存储器存储装置的控制方法。存储器存储设备提供存储空间，其被划分为多个物理块以访问更新的数据。该控制方法包括以下步骤：首先，确定更新的数据是否为热数据; 最后，根据上述确定的结果，将不是热数据的较少更新的数据存储到具有较高擦除次数的物理块中。

36. 发明授权

US08171207B2 Adaptive hybrid density memory storage device and control method thereof 有权
标题翻译：自适应混合密度存储器件及其控制方法
公开(公告)号：US08171207B2
公开(公告)日：2012-05-01
申请号：US12216181
申请日：2008-07-01
申请人： Li-Pin Chang , Ming-Dar Chen
发明人： Li-Pin Chang , Ming-Dar Chen
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28 , G11C11/34 , G11C16/04
CPC分类号： G06F12/0246 , G06F2212/7211 , G11C11/5621 , G11C2211/5641
摘要： The present invention discloses a control method of an adaptive hybrid density memory storage device suitable for locating a data to the storage device. The storage device includes a high density memory unit and a low density memory unit. The method is characterized in that the property of the data is determined by its length, and the data is written to the high density memory unit or the low density memory unit according to the property of the data and the relative wearing rate and the amount of data processed by the storage device.
摘要翻译：本发明公开了适用于将数据定位到存储装置的自适应混合密度存储装置的控制方法。存储装置包括高密度存储单元和低密度存储单元。该方法的特征在于数据的属性由其长度确定，并且数据根据数据的属性和相对的磨损率和数量被写入高密度存储单元或低密度存储单元由存储设备处理的数据。

37. 发明申请

US20090100244A1 Adaptive hybrid density memory storage device and control method thereof 有权
标题翻译：自适应混合密度存储器件及其控制方法
公开(公告)号：US20090100244A1
公开(公告)日：2009-04-16
申请号：US12216181
申请日：2008-07-01
申请人： Li-Pin Chang , Ming-Dar Chen
发明人： Li-Pin Chang , Ming-Dar Chen
IPC分类号： G06F12/00 , G06F3/00
CPC分类号： G06F12/0246 , G06F2212/7211 , G11C11/5621 , G11C2211/5641
摘要： The present invention discloses a control method of an adaptive hybrid density memory storage device suitable for locating a data to the storage device. The storage device includes a high density memory unit and a low density memory unit. The method is characterized in that the property of the data is determined by its length, and the data is written to the high density memory unit or the low density memory unit according to the property of the data and the relative wearing rate and the amount of data processed by the storage device.
摘要翻译：本发明公开了适用于将数据定位到存储装置的自适应混合密度存储装置的控制方法。存储装置包括高密度存储单元和低密度存储单元。该方法的特征在于数据的属性由其长度确定，并且数据根据数据的属性和相对的磨损率和数量被写入高密度存储单元或低密度存储单元由存储设备处理的数据。

38. 发明授权

US08103821B2 Flash memory device with wear-leveling mechanism and controlling method thereof 有权
标题翻译：具有磨损平衡机构的闪存装置及其控制方法
公开(公告)号：US08103821B2
公开(公告)日：2012-01-24
申请号：US12396547
申请日：2009-03-03
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A flash memory device with a wear-leveling mechanism includes at least one flash memory, a hot list, a bitmap, a source pointer, and a controller. The controller obtains a physical memory block with high erase count through the hot list, an erase count of the physical memory block, and an overall average erase count of the flash memory device. The controller further finds out a physical memory block which stores static data through managing the bitmap and the source pointer. The controller moves the static data to the physical memory block with high erase count, and releases the physical memory block which stores the static data to avoid the physical memory block with high erase count being worn down increasingly more seriously.
摘要翻译：具有磨损均衡机构的闪存装置包括至少一个闪存，热列表，位图，源指针和控制器。控制器通过热列表获得具有高擦除次数的物理存储器块，物理存储块的擦除计数和闪存器件的总平均擦除次数。控制器还通过管理位图和源指针找出存储静态数据的物理存储块。控制器将静态数据移动到具有高擦除次数的物理存储块，并释放存储静态数据的物理存储块，以避免高擦除次数的物理存储块越来越严重。

39. 发明申请

US20100169586A1 Memory storage device and a control method thereof 有权
标题翻译：存储器存储装置及其控制方法
公开(公告)号：US20100169586A1
公开(公告)日：2010-07-01
申请号：US12457402
申请日：2009-06-10
申请人： Li-Pin Chang , Ming-Dar Chen
发明人： Li-Pin Chang , Ming-Dar Chen
IPC分类号： G06F12/00 , G06F12/02 , G06F12/08
CPC分类号： G06F12/0246 , G06F2212/7202 , G11C11/5621 , G11C11/5671 , G11C2211/5641
摘要： The present invention discloses a control method of a memory storage device which includes a high density memory. The high density memory is composed of a plurality of MSB pages and LSB pages. The major feature of the method is such that it determines the property of data by its data length, and then decides where the data is to be written according to its property.
摘要翻译：本发明公开了一种包括高密度存储器的存储器存储装置的控制方法。高密度存储器由多个MSB页面和LSB页面组成。该方法的主要特点是通过数据长度确定数据的属性，然后根据其属性决定数据的写入位置。

40. 发明申请

US20100017555A1 Memory storage device and control method thereof 有权
标题翻译：内存存储装置及其控制方法
公开(公告)号：US20100017555A1
公开(公告)日：2010-01-21
申请号：US12320141
申请日：2009-01-21
申请人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
发明人： Li-Pin Chang , Ming-Dar Chen , Chien-Ting Huang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.
摘要翻译：提供了一种用于将更新的数据从主机写入存储器存储装置的存储器存储装置的控制方法。存储器存储设备提供存储空间，其被划分为多个物理块以访问更新的数据。该控制方法包括以下步骤：首先，确定更新的数据是否为热数据; 最后，根据上述确定的结果，将不是热数据的较少更新的数据存储到具有较高擦除次数的物理块中。

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