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31. 发明授权

US08241952B2 Semiconductor device and method of forming IPD in fan-out level chip scale package 有权
标题翻译：半导体器件和在扇出级芯片级封装中形成IPD的方法
公开(公告)号：US08241952B2
公开(公告)日：2012-08-14
申请号：US12713018
申请日：2010-02-25
申请人： Yaojian Lin , Robert C. Frye , Pandi Chelvam Marimuthu , Kai Liu
发明人： Yaojian Lin , Robert C. Frye , Pandi Chelvam Marimuthu , Kai Liu
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L23/49816 , H01L21/4857 , H01L21/561 , H01L21/568 , H01L23/49822 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L2221/68327 , H01L2221/6834 , H01L2224/0346 , H01L2224/0401 , H01L2224/04105 , H01L2224/05569 , H01L2224/05572 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/1146 , H01L2224/11849 , H01L2224/12105 , H01L2224/13022 , H01L2224/13111 , H01L2224/14133 , H01L2224/14135 , H01L2224/14163 , H01L2224/14165 , H01L2224/2101 , H01L2224/214 , H01L2224/221 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/09701 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/19015 , H01L2924/19041 , H01L2924/30105 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.
摘要翻译：半导体晶片包含半导体晶片。在模具上形成第一导电层。在管芯和第一导电层上形成电阻层。在管芯和电阻层上形成第一绝缘层。将晶片单片化以分离模具。模具安装到临时托架上。密封剂沉积在模具和载体上。移除载体和密封剂和第一绝缘层的一部分。在密封剂和第一绝缘层之上形成第二绝缘层。在第一绝缘层和第二绝缘层上形成第二导电层。在第二绝缘层和第二导电层上形成第三绝缘层。在第三绝缘层和第二导电层上形成第三导电层。在第三绝缘层和第三导电层上形成第四绝缘层。

32. 发明授权

US08227799B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08227799B2
公开(公告)日：2012-07-24
申请号：US12651146
申请日：2009-12-31
申请人： Kai Liu , Chen Feng , Kai-Li Jiang , Liang Liu , Shou-Shan Fan
发明人： Kai Liu , Chen Feng , Kai-Li Jiang , Liang Liu , Shou-Shan Fan
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/4908 , B82Y10/00 , H01L29/458 , H01L51/0048 , H01L51/0541 , H01L51/0558 , Y10S977/748 , Y10S977/75
摘要： The present disclosure provides a thin film transistor which includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconducting layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer. At least one of the gate electrode, the drain electrode, the source electrode includes a carbon nanotube composite layer.
摘要翻译：本公开提供一种薄膜晶体管，其包括源电极，漏电极，半导体层，绝缘层和栅电极。漏电极与源电极间隔开。半导体层与源电极和漏电极电连接。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。栅电极，漏电极，源电极中的至少一个包括碳纳米管复合层。

33. 发明申请

US20120168193A1 Method for Vertically Grounding and Leading Down from Outer Side of Composite Material Pole Tower and Pole Tower Thereoff 有权
标题翻译：从复合材料极塔和柱塔的外侧垂直接地和向下引导的方法
公开(公告)号：US20120168193A1
公开(公告)日：2012-07-05
申请号：US13395103
申请日：2010-05-05
申请人： Hanming LI , Zhijun LI , Qianhu Wei , Ting Liu , Shicong Deng , Feng Huo , Ming Zhan , Min Dai , Weicai Zhou , Kai Liu , Yuhua Zhang , Xiong Wu , Ning Cao , Dingxie Gu , Peihong Zhou , Huiwen He , Ying Lou , Zhenqiang Li
发明人： Hanming LI , Zhijun LI , Qianhu Wei , Ting Liu , Shicong Deng , Feng Huo , Ming Zhan , Min Dai , Weicai Zhou , Kai Liu , Yuhua Zhang , Xiong Wu , Ning Cao , Dingxie Gu , Peihong Zhou , Huiwen He , Ying Lou , Zhenqiang Li
IPC分类号： H01R4/66
CPC分类号： H02G7/20 , H01R4/66 , H02G1/02 , H02G13/00
摘要： A method for vertically grounding and leading down form an outer side of a composite pole tower and pole tower thereof, wherein the method includes the following steps: extending an upper metal cross arm from an extended line of at least one side of a ground wire cross arm, vertically leading down a ground down-leading wire from a distal end of the upper metal cross arm, connecting the ground down-leading wire to the pole tower via a lower metal cross arm at a distance under a lower lead, and grounding the ground down-leading wire along a tower body of the pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is selectively directly connected to the metal pipe via the lower metal cross arm. The method facilitates in compressing the width of the transmission corridor to a maximum extent as well as designing a lightning protection, preventing the ground down-leading wire from short-circuiting with the tower body, and realizing the insulation function of the composite material tower body. The manner of using unilateral ground down-leading wire saves material, and is economical and simple in structure.
摘要翻译：一种用于垂直接地和向下的方法形成复合极塔及其极塔的外侧，其中该方法包括以下步骤：从地线交叉的至少一侧的延伸线延伸上金属横臂从上金属横臂的远端垂直向下引导地面下降的导线，通过下导线下方一段距离的下金属横臂将地下导线连接到极塔，并将沿着塔架的塔体进行地面下降的导线，其中当塔体的下部是金属管时，地下导线通过下金属横臂选择性地直接连接到金属管。该方法有利于最大程度地压缩传输走廊的宽度，并设计防雷，防止地面引导线与塔体短路，实现复合材料塔体的绝缘功能。使用单边地下导线的方式节省材料，结构经济，结构简单。

34. 发明申请

US20120168192A1 Method for Vertically Grounding and Leading Down from Center of Composite Pole Tower and Pole Tower Thereof 有权
标题翻译：从复合塔塔和柱塔的中心垂直接地引导的方法
公开(公告)号：US20120168192A1
公开(公告)日：2012-07-05
申请号：US13395112
申请日：2010-05-05
申请人： Zhusen Sun , Qiang Zhang , Minghua Li , Zhijun Li , Ting Liu , Feng Huo , Min Dai , Kai Liu , Xiong Wu , Dingxie Gu , Peihong Zhou , Ying Lou , Zhenqiang Li , Huiwen He
发明人： Zhusen Sun , Qiang Zhang , Minghua Li , Zhijun Li , Ting Liu , Feng Huo , Min Dai , Kai Liu , Xiong Wu , Dingxie Gu , Peihong Zhou , Ying Lou , Zhenqiang Li , Huiwen He
IPC分类号： H02G7/22 , H02G13/00
CPC分类号： H02G7/205 , H02G3/0481
摘要： A method for vertically grounding and leading down form a center of a composite pole tower includes the following steps: extending a ground down-leading wire from a center of a ground wire cross arm which is made of metal and is positioned on top of the pole tower, wherein the ground down-leading wire is vertically leaded down to the earth form the center of the composite pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is extended from the center of the composite material and is directly connected to the metal pipe. The method utilizes the advantage of the insulating intensity of the wall of the composite pole tower and enhances the insulating intensity of the transmission line on impact of lightning. The ground down-leading wires are prevented from short-circuiting with the tower body of the composite pole tower, so that advantage of the insulating property of the composite material of the pole towers is realized. Since the ground down-leading wire is penetrated through center of the pole tower, so that the ground down-leading wires are not exposed and are prevented from destroying by external force. And also the method is easy and simple for application.
摘要翻译：将复合极塔的中心垂直接地和引导向下的方法包括以下步骤：将地面下降的导线从金属制成的地线交叉臂的中心延伸并位于极的顶部塔，其中地下引线垂直引导到复合极塔的中心的地面，其中当塔体的下部是金属管时，地下导线从中心延伸的复合材料，并直接连接到金属管。该方法利用了复合极塔壁绝缘强度的优点，提高了雷击冲击下输电线路的绝缘强度。防止地面下降的导线与复合极塔的塔体发生短路，从而实现了极塔复合材料绝缘性能的优点。由于地面下降的导线穿过极塔的中心，使得地面下降的导线不被暴露，并且防止被外力破坏。而且该方法简单易用。

35. 发明申请

US20120161304A1 Dual-leadframe Multi-chip Package and Method of Manufacture 有权
标题翻译：双引线框多芯片封装和制造方法
公开(公告)号：US20120161304A1
公开(公告)日：2012-06-28
申请号：US13411990
申请日：2012-03-05
申请人： Kai Liu , Lei Shi , Jun Lu , Anup Bhalla
发明人： Kai Liu , Lei Shi , Jun Lu , Anup Bhalla
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/49524 , H01L23/49537 , H01L23/49562 , H01L23/49589 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/24247 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/92246 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099
摘要： A dual-leadframe multi-chip package comprises a first leadframe with a first die pad, and a second leadframe with a second die pad; a first chip mounted on the first die pad functioning as a high-side MOSFET and second chip mounted on the second die pad functioning as a low-side MOSFET. The package may further comprises a bypass capacity configured as a third chip mounted on the first die pad or integrated with the first chip. The package may further comprise a three-dimensional connecting plate formed as an integrated structure as the second die pad for electrically connecting a top contact area of the first chip to a bottom contact area of the second chip. A top connecting plate connects a top contact area of the second chip and a top contact area of the third chip to an outer pin of the first leadframe.
摘要翻译：双引线框多芯片封装包括具有第一管芯焊盘的第一引线框架和具有第二管芯焊盘的第二引线框架; 安装在用作高边MOSFET的第一芯片焊盘上的第一芯片和安装在用作低端MOSFET的第二芯片焊盘上的第二芯片。封装还可以包括配置为安装在第一裸片焊盘上或与第一芯片集成的第三芯片的旁路容量。封装还可以包括形成为一体结构的三维连接板作为第二芯片焊盘，用于将第一芯片的顶部接触区域电连接到第二芯片的底部接触区域。顶部连接板将第二芯片的顶部接触区域和第三芯片的顶部接触区域连接到第一引线框架的外部引脚。

36. 发明授权

US08158199B2 Method for making individually coated and twisted carbon nanotube wire-like structure 有权
标题翻译：单独涂覆和扭转碳纳米管线状结构的方法
公开(公告)号：US08158199B2
公开(公告)日：2012-04-17
申请号：US12321551
申请日：2009-01-22
申请人： Kai-Li Jiang , Liang Liu , Kai Liu , Qing-Yu Zhao , Yong-Chao Zhai , Shou-Shan Fan
发明人： Kai-Li Jiang , Liang Liu , Kai Liu , Qing-Yu Zhao , Yong-Chao Zhai , Shou-Shan Fan
IPC分类号： C23C16/06
CPC分类号： H01B13/0026 , H01B1/04 , H01B1/24
摘要： A method for making an individually coated and twisted carbon nanotube wire-like structure, the method comprising the steps of: providing a carbon nanotube structure having a plurality of carbon nanotubes; forming at least one conductive coating on the plurality of carbon nanotubes in the carbon nanotube structure; and twisting the carbon nanotube structure.
摘要翻译：一种制备单独涂覆和扭转的碳纳米管线状结构的方法，所述方法包括以下步骤：提供具有多个碳纳米管的碳纳米管结构; 在所述碳纳米管结构中的所述多个碳纳米管上形成至少一个导电涂层; 并扭转碳纳米管结构。

37. 发明授权

US08111112B2 Semiconductor device and method of forming compact coils for high performance filter 有权
标题翻译：用于形成高性能滤波器的紧凑型线圈的半导体器件和方法
公开(公告)号：US08111112B2
公开(公告)日：2012-02-07
申请号：US12705790
申请日：2010-02-15
申请人： Kai Liu , Robert Charles Frye
发明人： Kai Liu , Robert Charles Frye
IPC分类号： H03H7/00 , H01H85/02 , H01L27/08
CPC分类号： H03H7/09 , H01F17/0006 , H01F2017/0046 , H01F2017/0073 , H03H7/1708 , H03H7/1775 , Y10T29/4902
摘要： A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The first and second coil structures are coupled by mutual inductance, and the second and third coil structures are coupled by mutual inductance. The first, second, and third coil structures each have a height greater than a skin current depth of the coil structure defined as a depth which current reduces to 1/(complex permittivity) of a surface current value. In the case of copper, the coil structures have a height greater than 5 micrometers.The first, second, and third coil structures are arranged in rounded or polygonal pattern horizontally across the substrate with a substantially flat vertical profile.
摘要翻译：半导体器件具有形成在衬底上的第一线圈结构。在与第一线圈结构相邻的衬底上形成第二线圈结构。在与第二线圈结构相邻的衬底上形成第三线圈结构。第一和第二线圈结构通过互感耦合，并且第二和第三线圈结构通过互感耦合。第一，第二和第三线圈结构各自具有高于线圈结构的皮肤电流深度的高度，其被定义为电流减小到表面电流值的1 /（复数介电常数）的深度。在铜的情况下，线圈结构的高度大于5微米。第一，第二和第三线圈结构以基本上平坦的垂直轮廓横跨衬底水平布置成圆形或多边形图案。

38. 发明申请

US20110032196A1 Touch panel and display device using the same 有权
标题翻译：触摸面板和使用相同的显示设备
公开(公告)号：US20110032196A1
公开(公告)日：2011-02-10
申请号：US12655489
申请日：2009-12-31
申请人： Chen Feng , Kai Liu , Kai-LI Jiang , Liang Liu , Shou-Shan Fan
发明人： Chen Feng , Kai Liu , Kai-LI Jiang , Liang Liu , Shou-Shan Fan
IPC分类号： G06F3/041
CPC分类号： G06F3/045
摘要： The present disclosure provides a touch panel and a display device employing the same. The touch panel includes at least one transparent layer consisting of a carbon nanotube metal composite layer including a carbon nanotube layer and a metal layer coated on the carbon nanotube layer.
摘要翻译：本公开提供一种触摸面板和采用该触摸面板的显示装置。触摸面板包括由包含碳纳米管层和涂覆在碳纳米管层上的金属层的碳纳米管金属复合层组成的至少一个透明层。

39. 发明授权

US07884469B2 Semiconductor package having a bridged plate interconnection 有权
标题翻译：具有桥接板互连的半导体封装
公开(公告)号：US07884469B2
公开(公告)日：2011-02-08
申请号：US12474107
申请日：2009-05-28
申请人： Lei Shi , Ming Sun , Kai Liu
发明人： Lei Shi , Ming Sun , Kai Liu
IPC分类号： H01L23/34
CPC分类号： H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metallized source contacts. A bridged source plate interconnection has a bridge portion, valley portions disposed on either side of the bridge portion, plane portions disposed on either side of the valley portions and the bridge portion, and a connection portion depending from one of the plane portions, the bridged source plate interconnection connecting the source lead with the plurality of metallized source contacts. The bridge portion is disposed in a plane above the plane of the valley portions while the plane portions are disposed in a plane intermediate the plane of the bridge portion and the plane of the valley portions.
摘要翻译：公开了半导体封装。封装包括具有漏极，源极和栅极引线的引线框架，以及耦合到引线框架的半导体管芯，半导体管芯具有多个金属化源极触点。桥接源极板互连具有桥接部分，设置在桥接部分的任一侧上的谷部分，设置在谷部分和桥接部分两侧的平面部分以及从平面部分之一悬挂的连接部分，将源极引线与多个金属化源触点连接的源极板互连。桥面部分设置在平坦部分的平面上方的平面中，而平面部分设置在桥接部分的平面和谷部的平面之间的平面中。

40. 发明授权

US07811149B2 Method for fabricating carbon nanotube-based field emission device 有权
标题翻译：制造基于碳纳米管的场致发射器件的方法
公开(公告)号：US07811149B2
公开(公告)日：2010-10-12
申请号：US11490810
申请日：2006-07-21
申请人： Peng Liu , Kai-Li Jiang , Kai Liu , Shou-Shan Fan
发明人： Peng Liu , Kai-Li Jiang , Kai Liu , Shou-Shan Fan
IPC分类号： H01J19/24
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： An exemplary method for fabricating a carbon nanotube-based field emission device is provided. A substrate is provided. A catalyst layer is formed on the substrate. A carbon nanotube array is grown from the catalyst layer. The carbon nanotube array includes a root portion and an opposite top portion respectively being in contact with and away from the catalyst layer. A cathode base with an adhesive layer formed thereon is provided. The top portion of the carbon nanotube array is immersed into the adhesive layer. The adhesive layer is solidified to embed the immersed top portion into the solidified adhesive layer. The root portion of the carbon nanotube array is exposed.
摘要翻译：提供了一种用于制造基于碳纳米管的场致发射器件的示例性方法。提供基板。在基板上形成催化剂层。从催化剂层生长碳纳米管阵列。碳纳米管阵列包括分别与催化剂层接触并远离催化剂层的根部和相对的顶部。提供其上形成有粘合剂层的阴极基体。将碳纳米管阵列的顶部浸入粘合剂层中。将粘合剂层固化以将浸入的顶部部分嵌入固化的粘合剂层中。碳纳米管阵列的根部露出。

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