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31. 发明申请

US20160187782A1 PHOTOLITHOGRAPHIC METHODS 有权
标题翻译：光刻方法
公开(公告)号：US20160187782A1
公开(公告)日：2016-06-30
申请号：US14971092
申请日：2015-12-16
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Phillip D. Hustad , Jong Keun Park
IPC分类号： G03F7/40 , H01L21/311 , H01L21/02 , H01L21/027
CPC分类号： H01L21/0206 , G03F7/0392 , G03F7/0397 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Provided are photolithographic methods. The method comprise: (a) providing a semiconductor substrate comprising an organic layer to be etched; (b) applying a layer of a photoresist composition directly on the organic layer, wherein the photoresist composition comprises: a resin comprising an acid cleavable leaving group, the cleavage of which forms an acid group and/or an alcohol group; a photoacid generator; and a solvent; (c) exposing the photoresist layer to activating radiation through a patterned photomask; (d) heating the photoresist layer, wherein acid generated by the acid generator causes cleavage of the acid cleavable leaving group, thereby forming the acid group and/or the alcohol group; (d) developing the exposed photoresist composition layer with an organic solvent developer to form a negative resist pattern comprising the acid group and/or the alcohol group; (e) applying a silicon-containing composition over the resist pattern, wherein the composition comprises a silicon-containing polymer and a solvent and is free of crosslinkers; (f) rinsing residual silicon-containing composition from the substrate, leaving a portion of the silicon-containing polymer on a surface of the resist pattern; and (g) selectively etching the organic layer. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
摘要翻译：提供光刻方法。该方法包括：（a）提供包括待蚀刻的有机层的半导体衬底; （b）将光致抗蚀剂组合物层直接施加在有机层上，其中光致抗蚀剂组合物包含：包含可酸切割离去基团的树脂，其切割形成酸基和/或醇基; 光致酸发生器; 和溶剂; （c）通过图案化的光掩模曝光光致抗蚀剂层以激活辐射; （d）加热光致抗蚀剂层，其中由酸发生剂产生的酸导致酸可裂解的离去基团的裂解，从而形成酸基和/或醇基; （d）用有机溶剂显影剂显影曝光的光致抗蚀剂组合物层以形成包含酸基和/或醇基的负抗蚀剂图案; （e）在抗蚀剂图案上涂覆含硅组合物，其中所述组合物包含含硅聚合物和溶剂并且不含交联剂; （f）从基材上漂洗剩余的含硅组合物，将一部分含硅聚合物留在抗蚀图案的表面上; 和（g）选择性蚀刻有机层。该方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

32. 发明申请

US20160185984A1 PORE-FILL COMPOSITIONS 审中-公开
标题翻译： PORE-FILL组合物
公开(公告)号：US20160185984A1
公开(公告)日：2016-06-30
申请号：US14972529
申请日：2015-12-17
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Emad Aqad , Jong Keun Park , Phillip D. Hustad , Mingqi Li , Cheng-Bai Xu , Peter Trefonas, III , James W. Thackeray
IPC分类号： C09D5/34 , C09D161/16 , H01L21/02 , C09D171/12
CPC分类号： C09D5/34 , C08G65/4012 , C08G65/4043 , C08G65/485 , C09D161/16 , C09D171/00 , C09D171/12 , H01B3/307 , H01L21/02126 , H01L21/02203 , H01L21/02343
摘要： A composition comprising a polymer and a solvent, wherein the polymer comprises: a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and an endcapping group that is free of polymerizable vinyl groups and hydroxyl groups. The compositions find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.
摘要翻译：一种包含聚合物和溶剂的组合物，其中所述聚合物包含：以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选取代的二价芳族基团; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和不含可聚合乙烯基和羟基的封端基。该组合物特别适用于制造用于形成低k和超低k电介质材料的半导体器件。

33. 发明申请

US20150349194A1 NANOSTRUCTURE MATERIAL METHODS AND DEVICES 审中-公开
标题翻译：纳米结构材料的方法和装置
公开(公告)号：US20150349194A1
公开(公告)日：2015-12-03
申请号：US14722845
申请日：2015-05-27
申请人： The Board of Trustees of the University of Illinois , Dow Global Technologies LLC , Rohm and Haas Electronic Materials, LLC
发明人： Brian T. Cunningham , Gloria G. See , Peter Trefonas , Jong Keun Park , Kishori Deshpande , Jieqian Zhang , Jaebum Joo
IPC分类号： H01L33/00 , H01L33/50
CPC分类号： H01L33/50 , G02B6/00 , H01L27/322 , H01L31/0203 , H01L31/02327 , H01L31/054 , H01L33/005 , H01L33/02 , H01L2251/5369 , Y02E10/52
摘要： In one aspect, structures are provided comprising: a substrate having a first surface and a second surface; and a polymeric layer disposed on the first surface of the substrate, the polymeric layer comprising a polymer and a plurality of light-emitting nanocrystals; the polymeric layer having a patterned surface, the patterned surface having a patterned first region having a first plurality of recesses and a patterned second region having a second plurality of recesses, wherein the plurality of recesses in each region has a first periodicity in a first direction, and a second periodicity in a second direction which intersects the first direction, wherein the first periodicity of the first region is different from the first periodicity of the second region.
摘要翻译：一方面，提供了包括：具有第一表面和第二表面的基底的结构; 以及设置在所述基板的第一表面上的聚合物层，所述聚合物层包含聚合物和多个发光纳米晶体; 所述聚合物层具有图案化表面，所述图案化表面具有带有第一多个凹部的图案化的第一区域和具有第二多个凹部的图案化的第二区域，其中，每个区域中的多个凹部在第一方向上具有第一周期性以及与第一方向相交的第二方向的第二周期，其中第一区域的第一周期与第二区域的第一周期不同。

34. 发明申请

US20210005668A1 OPTOELECTRONIC DEVICE AND METHODS OF USE 有权
公开(公告)号：US20210005668A1
公开(公告)日：2021-01-07
申请号：US16087384
申请日：2017-03-23
申请人： Dow Global Technologies LLC , The Board of Trustees of the University of Illinois , Rohm and Haas Company , Rohm and Haas Electronic Materials LLC
发明人： Peter Trefonas, III , Seongyong Cho , Kishori Deshpande , Trevor Ewers , Edward Greer , Jaebum Joo , Nuri Oh , Jong Keun Park , Moonsub Shim , Jieqian Zhang
IPC分类号： H01L27/28 , H01L51/50 , H01L51/42
摘要： Provided is a device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, wherein the device further comprises an opaque element that prevents light emitted by the light-emitting optoelectronic element from reaching the photocurrent-generating optoelectronic element via a pathway within the device.

35. 发明授权

US09916973B2 Photolithographic methods 有权
公开(公告)号：US09916973B2
公开(公告)日：2018-03-13
申请号：US14971092
申请日：2015-12-16
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Phillip D. Hustad , Jong Keun Park
IPC分类号： G03F7/16 , H01L21/02 , H01L21/311 , G03F7/039 , G03F7/32 , G03F7/40 , H01L21/027
CPC分类号： H01L21/0206 , G03F7/0392 , G03F7/0397 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Provided are photolithographic methods. The method comprise: (a) providing a semiconductor substrate comprising an organic layer to be etched; (b) applying a layer of a photoresist composition directly on the organic layer, wherein the photoresist composition comprises: a resin comprising an acid cleavable leaving group, the cleavage of which forms an acid group and/or an alcohol group; a photoacid generator; and a solvent; (c) exposing the photoresist layer to activating radiation through a patterned photomask; (d) heating the photoresist layer, wherein acid generated by the acid generator causes cleavage of the acid cleavable leaving group, thereby forming the acid group and/or the alcohol group; (d) developing the exposed photoresist composition layer with an organic solvent developer to form a negative resist pattern comprising the acid group and/or the alcohol group; (e) applying a silicon-containing composition over the resist pattern, wherein the composition comprises a silicon-containing polymer and a solvent and is free of crosslinkers; (f) rinsing residual silicon-containing composition from the substrate, leaving a portion of the silicon-containing polymer on a surface of the resist pattern; and (g) selectively etching the organic layer. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

36. 发明授权

US09738814B2 Method of controlling block copolymer characteristics and articles manufactured therefrom 有权
公开(公告)号：US09738814B2
公开(公告)日：2017-08-22
申请号：US14580307
申请日：2014-12-23
申请人： Dow Global Technologies LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Shih-Wei Chang , Jong Keun Park , John W. Kramer , Erin B. Vogel , Phillip D. Hustad , Peter Trefonas, III
IPC分类号： C09D183/10 , C08G77/16 , C08G77/442
CPC分类号： C09D183/10 , C08G77/16 , C08G77/442 , Y10T428/31663
摘要： Disclosed herein is a composition comprising a brush polymer; where the brush polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and a block copolymer; where the block copolymer comprises a first block and a second block that are covalently bonded to each other; where the first block comprises a first polymer and a second block comprises a second polymer; where the first polymer comprises less than or equal to 10 atomic percent polysiloxane; where the second polymer comprises at least 15 atomic percent polysiloxane; where the brush polymer is chemically different from the first polymer and the second polymer; and where the first polymer is chemically different from the second polymer; and wherein the block copolymer is disposed upon the brush polymer.

37. 发明申请

US20170192129A1 NANOSTRUCTURE MATERIAL STRUCTURES AND METHODS 审中-公开
公开(公告)号：US20170192129A1
公开(公告)日：2017-07-06
申请号：US15394569
申请日：2016-12-29
申请人： The Board of Trustees of the University of Illinoi , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Brian Cunningham , Gloria G. See , Peter Trefonas, III , Jieqian Zhang , Jong Keun Park , Kevin Howard , Kishori Deshpande , Trevor Ewers
IPC分类号： G02B1/00 , C09K11/88 , C09K11/02 , F21K9/64
CPC分类号： G02B1/005 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/025 , C09K11/883 , F21K9/64 , H01L33/502 , H01L33/505 , H01L2933/0083 , Y10S977/774 , Y10S977/892 , Y10S977/95
摘要： In one aspect, structures are provided that comprise a photonic crystal comprising a dielectric layer comprising therein one or more light-emitting nanostructure materials. In a further aspect, structures are provided that comprise a dielectric layer comprising first and second sets of light-emitting nanostructure materials at differing depths within the dielectric layer.

38. 发明授权

US09684241B2 Compositions and methods for pattern treatment 有权
公开(公告)号：US09684241B2
公开(公告)日：2017-06-20
申请号：US15172276
申请日：2016-06-03
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Vipul Jain , Mingqi Li , Huaxing Zhou , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
IPC分类号： G03F7/11 , G03F7/40 , G03F7/20 , G03F7/16 , G03F7/00 , H01L21/027 , C08F293/00 , C09D153/00 , G03F7/039 , G03F7/32
CPC分类号： G03F7/11 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/165 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , G03F7/405 , H01L21/0274
摘要： Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

39. 发明申请

US20170170008A1 PATTERN TREATMENT METHODS 审中-公开
公开(公告)号：US20170170008A1
公开(公告)日：2017-06-15
申请号：US15296592
申请日：2016-10-18
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Jong Keun Park , Mingqi Li , Amy M. Kwok , Phillip D. Hustad
IPC分类号： H01L21/027 , C09D125/08 , G03F7/11 , C09D133/10 , H01L21/02 , G03F7/039
CPC分类号： H01L21/0273 , C08F297/02 , C09D125/08 , C09D133/10 , G03F7/039 , G03F7/0397 , G03F7/11 , G03F7/325 , G03F7/40 , G03F7/405 , H01L21/0206 , H01L21/033
摘要： Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

40. 发明授权

US09665005B2 Pattern treatment methods 有权
公开(公告)号：US09665005B2
公开(公告)日：2017-05-30
申请号：US15172228
申请日：2016-06-03
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Vipul Jain , Mingqi Li , Huaxing Zhou , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
IPC分类号： G03F7/004 , G03F7/40 , G03F7/16 , G03F7/20 , C08F293/00 , G03F7/00 , C09D153/00 , H01L21/027 , G03F7/039 , G03F7/32
CPC分类号： G03F7/165 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , G03F7/405 , H01L21/0274
摘要： Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

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