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31. 发明申请

US20150118844A1 Methods of Forming Patterns, and Methods of Forming Integrated Circuitry 审中-公开
标题翻译：形成模式的方法和形成集成电路的方法
公开(公告)号：US20150118844A1
公开(公告)日：2015-04-30
申请号：US14584611
申请日：2014-12-29
申请人： Micron Technology, Inc.
发明人： Vishal Sipani
IPC分类号： H01L21/768 , H01L21/3205 , H01L21/311
CPC分类号： H01L21/76805 , H01L21/0337 , H01L21/0338 , H01L21/266 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/3205 , H01L21/76802 , H01L27/1052 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming a pattern. First lines are formed over a first material, and second lines are formed over the first lines. The first and second lines form a crosshatch pattern. The first openings are extended through the first material. Portions of the first lines that are not covered by the second lines are removed to pattern the first lines into segments. The second lines are removed to uncover the segments. Masking material is formed between the segments. The segments are removed to form second openings that extend through the masking material to the first material. The second openings are extended through the first material. The masking material is removed to leave a patterned mask comprising the first material having the first and second openings therein. In some embodiments, spacers may be formed along the first and second lines to narrow the openings in the crosshatch pattern.
摘要翻译：一些实施例包括形成图案的方法。第一线形成在第一材料上，并且第二线形成在第一线上。第一行和第二行形成交叉影线图案。第一开口延伸穿过第一材料。第一行未覆盖的第一行的部分被删除，以将第一行划分成段。删除第二行以发现段。在片段之间形成遮蔽材料。去除这些段以形成延伸穿过掩模材料到第一材料的第二开口。第二开口延伸穿过第一材料。去除掩模材料以留下包含其中具有第一和第二开口的第一材料的图案化掩模。在一些实施例中，可以沿着第一和第二线形成间隔物以使交叉阴影图案中的开口变窄。

32. 发明授权

US08937018B2 Methods of forming a pattern on a substrate 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US08937018B2
公开(公告)日：2015-01-20
申请号：US13786848
申请日：2013-03-06
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Anton J. deVillers , Ranjan Khurana
IPC分类号： H01L21/311 , H01L21/308
CPC分类号： H01L21/0337
摘要： A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.
摘要翻译：在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。光致抗蚀剂在圆柱状结构的顶部和侧面向内形成。图案化光致抗蚀剂以在圆柱状结构物的横向外侧形成到光致抗蚀剂中的间隙。间隙空间被至少三个圆筒状结构包围。图案化的光致抗蚀剂用作蚀刻掩模，同时将间隙开口蚀刻到基底中，同时光致抗蚀剂在圆柱状结构的侧向内侧。公开其他方面。

33. 发明申请

US20140134841A1 Methods of Forming Patterns, and Methods of Forming Integrated Circuitry 有权
标题翻译：形成模式的方法和形成集成电路的方法
公开(公告)号：US20140134841A1
公开(公告)日：2014-05-15
申请号：US14160659
申请日：2014-01-22
申请人： Micron Technology, Inc.
发明人： Vishal Sipani
IPC分类号： H01L21/768
CPC分类号： H01L21/76805 , H01L21/0337 , H01L21/0338 , H01L21/266 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/3205 , H01L21/76802 , H01L27/1052 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming a pattern. First lines are formed over a first material, and second lines are formed over the first lines. The first and second lines form a crosshatch pattern. The first openings are extended through the first material. Portions of the first lines that are not covered by the second lines are removed to pattern the first lines into segments. The second lines are removed to uncover the segments. Masking material is formed between the segments. The segments are removed to form second openings that extend through the masking material to the first material. The second openings are extended through the first material. The masking material is removed to leave a patterned mask comprising the first material having the first and second openings therein. In some embodiments, spacers may be formed along the first and second lines to narrow the openings in the crosshatch pattern.
摘要翻译：一些实施例包括形成图案的方法。第一线形成在第一材料上，并且第二线形成在第一线上。第一行和第二行形成交叉影线图案。第一开口延伸穿过第一材料。第一行未覆盖的第一行的部分被删除，以将第一行划分成段。删除第二行以发现段。在片段之间形成遮蔽材料。去除这些段以形成延伸穿过掩模材料到第一材料的第二开口。第二开口延伸穿过第一材料。去除掩模材料以留下包含其中具有第一和第二开口的第一材料的图案化掩模。在一些实施例中，可以沿着第一和第二线形成间隔物以使交叉阴影图案中的开口变窄。

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