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    • 31. 发明申请
    • ALGORITHM CORRECTING FOR CORRECTION OF INTERFEROMETER FLUCTUATION
    • 修正干涉仪波动校正的算法
    • US20100014097A1
    • 2010-01-21
    • US12502099
    • 2009-07-13
    • Michael R. Sogard
    • Michael R. Sogard
    • G01B11/14
    • G03F7/70858G03F7/70516G03F7/70775
    • An exemplary interferometer system includes an interferometer producing data from at least one interferometer beam. A source of gently flowing gas or gas mixture (atmosphere) produces a gas flow substantially normal to the beam pathway. A perturbation source (e.g., resistance heater) upstream of the beam pathway produces, in a repetitively pulsed manner, perturbed loci in the flowing atmosphere in selected locations upstream of the beam pathway. The perturbed loci flow to the interferometer beam(s). Data from the interferometer are received by a processor programmed with an algorithm that calculates, based on the data obtained during a perturbation pulse, the effect of the perturbed loci on the at least one interferometer beam as the loci pass through the interferometer beam. The processor also updates the algorithm based on data obtained from the interferometer during a subsequent perturbation pulse, compared to a previous perturbation pulse.
    • 示例性干涉仪系统包括从至少一个干涉仪光束产生数据的干涉仪。 气体或气体混合气体(气氛)的源头产生基本上垂直于光束通路的气流。 波束通路上游的扰动源(例如,电阻加热器)以重复脉冲的方式产生在流动气流中在流动通路上游选定位置的扰动轨迹。 扰动的轨迹流向干涉仪束。 来自干涉仪的数据由处理器接收,处理器使用算法编程,该算法基于在扰动脉冲期间获得的数据,当轨迹穿过干涉仪光束时,基于所述至少一个干涉仪光束的扰动轨迹的影响。 与先前的扰动脉冲相比,处理器还在随后的扰动脉冲期间基于从干涉仪获得的数据更新算法。
    • 32. 发明授权
    • Blind devices and methods for providing continuous thermophoretic protection of lithographic reticle
    • 用于提供光刻掩模版的连续热解保护的盲设备和方法
    • US07554648B2
    • 2009-06-30
    • US11266839
    • 2005-11-04
    • Michael R. Sogard
    • Michael R. Sogard
    • G03B27/32G03B27/54
    • G03B27/52G03F7/70066G03F7/70875
    • Blind devices and related methods for lithography systems are described. An exemplary system has a vacuum chamber with first and second chamber portions. In a member between the chambers is defined an exposure aperture, relative to which a reticle stage in the first chamber portion moves a reticle. A gas enters the first chamber portion and establishes a thermophoretic condition relative to the reticle or portion thereof. A fixed-blind-aperture assembly, movable relative to the exposure aperture and the reticle to exposure and non-exposure positions, defines an illumination aperture through which light from the second chamber portion and gas from the first chamber portion pass when the fixed-blind-aperture assembly is in the exposure position. A gas-passage aperture in the member conducts the gas, passing through the illumination aperture, from the first chamber portion to the second chamber portion when the fixed-blind-aperture assembly is in the non-exposure position.
    • 描述了用于光刻系统的盲设备和相关方法。 示例性系统具有具有第一和第二室部分的真空室。 在室之间的构件中限定了曝光孔,相对于第一室部分中的掩模版台移动掩模版。 气体进入第一室部分并且相对于掩模版或其部分建立热泳条件。 固定盲孔组件可相对于曝光孔和掩模版移动到曝光和非曝光位置,限定了一个照明孔,通过该照明孔,来自第二室部分的光和来自第一室部分的气体当固定盲 - 组件处于曝光位置。 当固定式盲孔组件处于非曝光位置时,构件中的气体通道孔将通过照明孔的气体从第一室部分传导到第二室部分。
    • 34. 发明授权
    • Semiconductor wafer alignment using backside illumination
    • 使用背面照明的半导体晶片对准
    • US06376329B1
    • 2002-04-23
    • US08906190
    • 1997-08-04
    • Michael R. SogardJohn H. McCoy
    • Michael R. SogardJohn H. McCoy
    • H01L2176
    • G03F9/7084
    • A projection exposure apparatus for exposing a semiconductor wafer to a pattern, formed on a reticle, using a projection lens system. An alignment optical system is disposed at a backside of the wafer which is remote from the projection lens system. The alignment optical system detects an alignment mark provided on the frontside of the wafer from the backside of the wafer. Thus the wafer alignment mark is detected without being adversely affected by integrated circuit layers, e.g. photoresist, metallization, etc. applied to the principal surface (frontside) of the wafer, and the reticle and wafer can be aligned accurately. Any tilting or wedging of the wafer, i.e. non-normality to the incident light beam, is detected and corrected for.
    • 一种投影曝光装置,用于使用投影透镜系统将半导体晶片曝光到形成在掩模版上的图案。 对准光学系统设置在远离投影透镜系统的晶片的背面。 对准光学系统从晶片的背面检测设置在晶片的前侧上的对准标记。 因此,晶片对准标记被检测而不受集成电路层的不利影响,例如, 光刻胶,金属化等施加到晶片的主表面(正面),并且光罩和晶片可以准确对准。 检测和校正晶片的任何倾斜或楔入,即对入射光束的非正常性。
    • 35. 发明授权
    • Fluid bearing operable in a vacuum region
    • 流体轴承可在真空区域中操作
    • US06287004B1
    • 2001-09-11
    • US09444549
    • 1999-11-22
    • Michael R. Sogard
    • Michael R. Sogard
    • F16C3206
    • F16C33/72F16C29/025F16C32/0614F16C32/0685F16C2300/62H01J37/18H01J37/20
    • A fluid bearing suitable for use in a vacuum region comprises a fluid passageway for introducing a fluid into the bearing, a pump-out slot for evacuating the fluid from the bearing, and a bearing seal disposed along a periphery of the bearing to restrict fluid from escaping from the bearing into the vacuum region. The bearing seal comprises a bridge structure including a first base, a second base, a transverse member fixed at one end to the first base and movably disposed in a slot defined by the second base, and a sealing sheet extending from the transverse member between the first and second bases. The sealing sheet forms a compliant mechanical wall around the periphery of the bearing. The seal further includes an adjustable spring force element which exerts a force on the sealing sheet to ensure marginal contact with a bearing support surface to form a low-frictional seal. The sealing sheet confines the fluid which escapes outside of the pump-out slots to within the perimeter of the wall formed by the sealing sheet. The seal allows for movement of the air bearing relative to the bearing support surface and is suitable for use with an XY wafer or reticle stage. The air bearing and its seal may be adapted as a journal shaft-type bearing.
    • 适用于真空区域的流体轴承包括用于将流体引入轴承的流体通道,用于从轴承排出流体的抽出槽和沿着轴承的周边设置的轴承密封件, 从轴承逃逸到真空区域。 所述轴承密封件包括桥结构,所述桥结构包括第一基座,第二基座,在一端固定到所述第一基座并且可移动地设置在由所述第二基座限定的槽中的横向构件,以及从所述横向构件延伸的密封片 第一和第二基地。 密封片在轴承的周边周围形成顺从的机械壁。 密封件还包括可调弹簧力元件,其在密封片上施加力以确保与轴承支撑表面的边缘接触以形成低摩擦密封。 密封片限制从排出槽外侧排出的流体在由密封片形成的壁的周边内。 密封件允许空气轴承相对于轴承支撑表面的移动,并且适用于XY晶片或标线片台。 空气轴承及其密封件可适用于轴颈轴承。
    • 36. 发明授权
    • High throughput electron beam lithography system
    • 高通量电子束光刻系统
    • US6014200A
    • 2000-01-11
    • US28721
    • 1998-02-24
    • Michael R. SogardJohn McCoy
    • Michael R. SogardJohn McCoy
    • H01J37/09G03F7/20H01J37/147H01J37/305H01J37/317H01L21/027G03B27/42G03B27/54A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3177H01J2237/31776
    • An electron beam lithography system having a beamlet shaping section that includes a first multi-aperture array having m rows and n columns of apertures having a first shape and a second multi-aperture array with m rows and n columns of apertures having a second shape. Electron beamlets formed by the first multi-aperture array are deflected by a deflector unit before passing through the second multi-aperture array. The superposition of the electron beamlets on the second multi-aperture produces electron beamlets having a selected shape. Deflection logic on an active beam aperture array blank selected electron beamlets. The deflection logic can be updated with the next logic pattern as the current logic pattern is being executed. The unblanked electron beamlets are directed onto a surface to be exposed. The deflection logic on the active beam aperture array, and the multi-aperture arrays, are shielded from electrons and x-rays generated by the electrons striking surfaces within the electron beam lithography system. Sensitive deflection logic is radiation hardened to prevent degradation.
    • 一种具有子束成形部分的电子束光刻系统,该子束成形部分包括具有m行和n列的具有第一形状的孔的第一多孔径阵列和具有m行和n列的具有第二形状的孔的第二多孔径阵列。 由第一多孔径阵列形成的电子束由穿过第二多孔径阵列之前的偏转器单元偏转。 电子束在第二多孔上的叠加产生具有选定形状的电子束。 有源光束孔径阵列上的偏转逻辑选择电子束。 随着当前逻辑模式正在执行,偏转逻辑可以用下一个逻辑模式进行更新。 未钝化的电子子束被引导到待暴露的表面上。 有源光束孔径阵列和多孔径阵列上的偏转逻辑与电子束光刻系统内的电子撞击表面产生的电子和x射线屏蔽。 敏感偏转逻辑是辐射硬化以防止退化。
    • 38. 发明授权
    • Hybrid electrostatic chuck
    • 混合式静电吸盘
    • US08593779B2
    • 2013-11-26
    • US12652669
    • 2010-01-05
    • Michael R. Sogard
    • Michael R. Sogard
    • H01L21/683
    • H01L21/6831G03F7/70708H01L21/6833
    • An electrostatic chuck (230) for holding a device (200) includes a chuck body (244), a Coulomb electrode assembly (246), a Johnsen-Rahbek (J-R) electrode assembly (248), and a control system (224). The chuck body (244) includes a chucking surface (250) that engages the device (200), and the chuck body (244) is made of a dielectric having a relatively high resistance. The J-R electrode assembly (248) is positioned spaced apart from the chucking surface (250). The Coulomb electrode assembly (246) is also positioned spaced apart from the chucking surface (250). The control system (224) selectively directs a first voltage to the J-R electrode assembly (248) to generate a J-R type force that attracts the device (200) towards the chucking surface (250), and selectively directs a second voltage to the Coulomb electrode assembly (246) to generate a Coulomb type force that also attracts the device (200) towards the chucking surface (250). With this design, both the J-R type force and the Coulomb type force are used to concurrently attract the device (200) against the chucking surface (2500. As a result thereof, the electrostatic chuck (230) is better able to reduce non-flatness of the device (200), and/or crush any particles positioned between the device (200) and the chucking surface (250).
    • 用于保持装置(200)的静电卡盘(230)包括卡盘主体(244),库仑电极组件(246),约翰 - 拉贝克(J·R)电极组件(248)和控制系统(224))。 卡盘主体(244)包括与装置(200)接合的卡盘表面(250),卡盘主体(244)由具有较高阻力的电介质制成。 J-R电极组件(248)定位成与夹紧表面(250)间隔开。 库仑电极组件(246)也位于与夹紧表面(250)间隔开的位置。 所述控制系统(224)选择性地将第一电压引导到所述JR电极组件(248)以产生将所述装置(200)吸引到所述夹紧表面(250)的JR型力,并且选择性地将第二电压引导到所述库仑电极 组件(246)以产生也吸引装置(200)朝向夹紧表面(250)的库仑型力。 通过这种设计,JR型力和库仑型力均被用于同时将装置(200)吸引在卡盘表面(2500)上。因此,静电卡盘(230)能够更好地降低非平坦度 的装置(200),和/或压缩位于装置(200)和夹紧表面(250)之间的任何颗粒。
    • 39. 发明申请
    • FLUID GAUGE WITH MULTIPLE REFERENCE GAPS
    • 具有多个参考GAPS的流量计
    • US20110157576A1
    • 2011-06-30
    • US12980064
    • 2010-12-28
    • Michael R. Sogard
    • Michael R. Sogard
    • G03B27/58G01B13/12
    • G01B13/00G03F9/7057
    • A fluid gauge (222) for measuring the position of a work piece (200) includes a gauge body (236), a fluid source assembly (238), and a gauge control system (240). The gauge body (236) includes a measurement conduit (246), a first reference conduit (248A), a second reference conduit (248B), a first reference surface (250A) that is spaced apart a first reference gap (242A) from an outlet (254) of the first reference conduit (248A), and a second reference surface (250B) that is spaced apart a second reference gap (242B) from an outlet (254) of the second reference conduit (248B). The gauge body (236) is positioned so that an outlet (254) of the measurement conduit (246) is spaced apart a measurement gap (244) from the work piece (200). Further, the fluid source assembly (238) directs a fluid (260) into the conduits (246), (248A), (248B). Moreover, the gauge control system (240) determines (i) a first pressure difference between a measurement pressure (264) and a first reference pressure (262A); and (ii) a second pressure difference between the measurement pressure (264) and a second reference pressure (262B).
    • 用于测量工件(200)的位置的流体计(222)包括量规体(236),流体源组件(238)和量规控制系统(240)。 仪表主体(236)包括测量导管(246),第一参考导管(248A),第二参考导管(248B),第一参考表面(250A),第一参考表面(250A) 第一参考管道(248A)的出口(254)和与第二参考管道(248B)的出口(254)间隔开第二参考间隙(242B)的第二参考表面(250B)。 定位体(236)被定位成使得测量导管(246)的出口(254)与工件(200)间隔开测量间隙(244)。 此外,流体源组件(238)将流体(260)引导到管道(246),(248A),(248B)中。 此外,量规控制系统(240)确定(i)测量压力(264)和第一参考压力(262A)之间的第一压力差; 和(ii)测量压力(264)和第二参考压力(262B)之间的第二压力差。
    • 40. 发明申请
    • PHYSICAL SENSOR FOR AUTOFOCUS SYSTEM
    • AUTOFOCUS系统的物理传感器
    • US20110069291A1
    • 2011-03-24
    • US12879113
    • 2010-09-10
    • Michael R. Sogard
    • Michael R. Sogard
    • G01B13/02G03B27/52
    • G01B13/065G03B27/52
    • Methods and apparatus for compensating for forces applied by a system which measures a height of a photoresist-coated surface of a wafer are disclosed. According to one aspect, a method for measuring a height associated with a wafer includes utilizing a measurement of an air flow through an air gauge or air bearing to estimate the height, determining a first magnitude of a bearing load exerted on the wafer from the air flow measurement, and compensating for the bearing load. The bearing load is exerted by an arrangement configured to determine the height associated with the wafer a first direction. Compensating for the bearing load includes applying an opposing force to the wafer that includes at least a vacuum preload force. The vacuum preload force is applied in a second direction that is opposite from the first direction. The opposing force is calculated to have a second magnitude that is approximately equal to the first magnitude.
    • 公开了用于补偿由测量晶片的光致抗蚀剂涂覆表面的高度的系统施加的力的方法和装置。 根据一个方面,一种用于测量与晶片相关联的高度的方法包括利用通过空气表或空气轴承的空气流的测量来估计高度,从空气中确定施加在晶片上的轴承负载的第一幅度 流量测量和补偿轴承负载。 轴承负载由配置成确定与第一方向相关联的高度的高度的配置来施加。 补偿轴承负载包括向晶片施加相反的力,其包括至少真空预载力。 真空预压力沿与第一方向相反的第二方向施加。 相反的力被计算为具有近似等于第一幅度的第二幅度。