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31. 发明授权

US06683803B2 Apparatus and methods for data storage and retrieval 失效
标题翻译：用于数据存储和检索的装置和方法
公开(公告)号：US06683803B2
公开(公告)日：2004-01-27
申请号：US10318137
申请日：2002-12-13
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： In a data storage apparatus comprising means for storing and retrieving data in respective write and read operations, and first and second set of addressing electrodes are provided, the latter set having electrodes that preferably are oriented orthogonally to the electrodes of the first set, and the electrodes (b, c) of the second set are provided as parallel twin electrodes located in parallel recesses or trenches (3) in the electrodes of the first set. The trenches compris a soft ferroelectric or electret memory material with piezoelectric properties such that memory cells (1) with two subcells (&agr;1, &agr;2) are formed in the trench (3) respectively between the electrodes (a) of the first set and the parallel twin electrodes (b, c) on either side of the latter. In a write operation data are encoded in the memory cells (1) by means of an applied voltage potential over the subcells (&agr;1, &agr;2). In a non-destructive readout operation of data encoded and stored in the memory cells (1) in this manner, the piezoelectric properties of the memory material (2) is employed for eliciting response signals from the subcells (&agr;1, &agr;2) of a memory cell (1) when the former are subjected to mechanical stresses in the lateral direction, such that the logical value stored in the memory cell (1) can be determined.
摘要翻译：在一种数据存储装置中，包括用于在各自的写入和读取操作中存储和检索数据的装置，并且提供了第一和第二组寻址电极，后者组具有优选地与第一组电极正交定向的电极，第二组的电极（b，c）设置为平行的双电极，位于第一组的电极中的平行的凹槽或沟槽（3）中。沟槽包括具有压电特性的软铁电或驻极体记忆材料，使得分别在第一组的电极（a）和平行的电极（a）之间的沟槽（3）中形成具有两个子电池（α1，α2）的存储单元（1）双电极（b，c）位于后两侧。在写入操作中，通过在子单元（α1，α2）上施加的电压电位将数据编码在存储器单元（1）中。在以这种方式编码和存储在存储器单元（1）中的数据的非破坏性读出操作中，存储材料（2）的压电特性用于从存储器的子单元（α1，α2）引出响应信号当前者在横向受到机械应力时，使得可以确定存储在存储单元（1）中的逻辑值。

32. 发明授权

US06670659B1 Ferroelectric data processing device 失效
公开(公告)号：US06670659B1
公开(公告)日：2003-12-30
申请号：US09463982
申请日：2000-02-15
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr Ivarsson Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr Ivarsson Leistad
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/0688
摘要： In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent toelectrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence be used for implementing volumetric data processing devices.

33. 发明授权

US06606261B2 Method for performing write and read operations in a passive matrix memory, and apparatus for performing the method 有权
标题翻译：在无源矩阵存储器中执行写入和读取操作的方法，以及用于执行该方法的装置
公开(公告)号：US06606261B2
公开(公告)日：2003-08-12
申请号：US09899094
申请日：2001-07-06
申请人： Hans Gude Gudesen , Per-Erik Nordal , Per Bröms , Mats Johansson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Per Bröms , Mats Johansson
IPC分类号： G11C1112
CPC分类号： G11C11/22
摘要： A method and apparatus for performing read and write operations in matrix-addressed memory array of memory cells is described. The memory cells comprising an electrically polarizable material exhibiting polarization remanence, in particular and electret or ferroelectric material, where a logical value stored in a memory cell is represented by an actual polarization state in the memory cell. The degree of polarization in the polarizable material is limited during each read and write cycle to a value defined by a circuit device controlling the read and write operations, with said value ranging from zero to an upper limit corresponding to saturation of the polarization and consistent with predetermined criterta for a reliable detection of a logic state of a memory cell.
摘要翻译：描述了一种在存储器单元的矩阵寻址存储器阵列中执行读和写操作的方法和装置。存储单元包括表现出极化剩磁的电可极化材料，特别是驻极体或铁电材料，其中存储在存储单元中的逻辑值由存储单元中的实际极化状态表示。在每个读取和写入周期期间，可极化材料中的极化程度被限制在由控制读取和写入操作的电路装置定义的值，所述值范围从零到上限，对应于极化饱和度，并与用于可靠地检测存储器单元的逻辑状态的预定标准。

34. 发明授权

US06432739B1 METHOD FOR GENERATING ELECTRICAL CONDUCTING OR SEMICONDUCTING STRUCTURES IN TWO OR THREE DIMENSIONS, A METHOD FOR ERASING THE SAME STRUCTURES AND AN ELECTRIC FIELD GENERATOR/MODULATOR FOR USE WITH THE METHOD FOR GENERATING 失效
标题翻译：用于在两个或三个尺寸上产生电导体或半导体结构的方法，用于消除相同结构的方法和使用用于产生的方法的电场发生器/调制器
公开(公告)号：US06432739B1
公开(公告)日：2002-08-13
申请号：US09381994
申请日：1999-09-28
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H01L5140
CPC分类号： H01L51/0001 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L51/0024 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： A method for generating electrically conducting and/or semiconducting structures in three dimensions in a matrix that includes two or more materials in spatially separated material structures is disclosed. An electric field is applied to the separate material structure and the field is modulated spatially according to a protocol. The protocol represents a predetermined pattern of electrically conducting and/or semiconducting structures that are generated in the material structure in response to the field. The matrix composed by the material structures includes structures of this kind in three dimensions. A method for global erasing is also disclosed, wherein an electric field is applied to the matrix until the materials in the matrix, in their entirety, arrive in a non-conducting state in response to the field.
摘要翻译：公开了一种用于在包括空间分离的材料结构中的两种或更多种材料的基体中产生三维导电和/或半导体结构的方法。电场被施加到单独的材料结构，并且根据协议对场进行空间调制。该协议表示响应于场而在材料结构中产生的导电和/或半导体结构的预定图案。由材料结构构成的矩阵在三维中包括这种结构。还公开了一种用于全局擦除的方法，其中电场被施加到矩阵，直到矩阵中的材料在整体上响应于该场而到达非导通状态。

35. 发明授权

US06219160B1 Optical logic element and methods for respectively its preparation and optical addressing, as well as the use thereof in an optical logic device 失效
标题翻译：光学逻辑元件和分别用于光学逻辑器件的光学逻辑元件和方法以及其在光学逻辑器件中的应用
公开(公告)号：US06219160B1
公开(公告)日：2001-04-17
申请号：US09230920
申请日：1999-03-25
申请人： Per-Erik Nordal , Hans Gude Gudesen , Geirr Ivarsson Leistad
发明人： Per-Erik Nordal , Hans Gude Gudesen , Geirr Ivarsson Leistad
IPC分类号： G02F300
CPC分类号： G11C13/0014 , B82Y10/00 , G02F3/02 , G11C7/005 , G11C11/5664 , G11C13/00 , G11C13/0016 , G11C13/04 , Y10S359/90
摘要： In a multistable optical logic element with a light-sensitive organic material (1) which undergoes a photocycle with several physical states by irradiation with light, and wherein a physical state is assigned a logical value which can be changed by addressing the element optically, the element initially before the addressing is in a metastable state generated in advance. A multistable optical logic element has been made proximity-addressable by providing at least a color light source (2) for optical addressing and at least one color-sensitive optical detector (5) adjacent to the light-sensitive material. In a method for preparing of the light-sensitive material (1) a desired initial metastable state is generated in the photocycle and assigned a determined logical value for the element. In a method for optical addressing of the optical logic element steps for respectively writing and storing, reading, erasing and switching comprises generating transitions between states in the photocycle and detection of the states. Use in an optical logical device for storing and processing of data.
摘要翻译：在具有光敏有机材料（1）的多光学光学逻辑元件中，其通过用光照射经历具有若干物理状态的光循环，并且其中物理状态被分配可以通过光学寻址元素而改变的逻辑值，元素最初在寻址之前处于预先生成的亚稳态中。通过至少提供用于光寻址的彩色光源（2）和与感光材料相邻的至少一个颜色敏感的光学检测器（5），已经使多路光逻辑元件变得可接近寻址。在制备感光材料（1）的方法中，在光循环中产生期望的初始亚稳态，并为该元素分配确定的逻辑值。在用于光学逻辑元件的光寻址的方法中，用于分别写入和存储，读取，擦除和切换的步骤包括在照相机中的状态之间产生转变并检测状态。在光学逻辑设备中用于存储和处理数据。

36. 发明申请

US20070103960A1 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US20070103960A1
公开(公告)日：2007-05-10
申请号：US10579968
申请日：2004-11-24
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

37. 发明申请

US20060146589A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device 失效
标题翻译：用于操作无源矩阵寻址铁电或驻极体存储器件的方法
公开(公告)号：US20060146589A1
公开(公告)日：2006-07-06
申请号：US11027977
申请日：2005-01-04
申请人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
发明人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
IPC分类号： G11C11/22
CPC分类号： G11C29/50 , G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有定义参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

38. 发明授权

US07646629B2 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US07646629B2
公开(公告)日：2010-01-12
申请号：US12010067
申请日：2008-01-18
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans G. Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans G. Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.
摘要翻译：在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

39. 发明申请

US20050058010A1 Addressing of memory matrix 有权
标题翻译：存储矩阵的寻址
公开(公告)号：US20050058010A1
公开(公告)日：2005-03-17
申请号：US10934573
申请日：2004-09-07
申请人： Michael Thompson , Per-Erik Nordal , Hans Gudesen , Johan Carlsson , Goran Gustafsson
发明人： Michael Thompson , Per-Erik Nordal , Hans Gudesen , Johan Carlsson , Goran Gustafsson
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , G11C11/22 , G11C8/02
CPC分类号： G11C11/22 , G09G3/20 , G09G3/3629 , G09G2300/06 , G09G2310/0251 , G09G2320/0209 , G11C7/06 , G11C7/1006 , G11C8/18
摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.
摘要翻译：驱动单元的无源矩阵显示器或存储器阵列的方法，该阵列包括具有磁滞的电可极化材料，特别是铁电材料，其中可以通过将电位或电压施加到字和位线来切换各个单元的极化状态，矩阵或阵列。

40. 发明申请

US20220356862A1 SOLUTION MINED CAVITY SYSTEM 有权
公开(公告)号：US20220356862A1
公开(公告)日：2022-11-10
申请号：US17770618
申请日：2020-11-09
申请人： Hans Gude Gudesen
发明人： Hans Gude GUDESEN , Per-Erik Nordal
IPC分类号： F03B13/06 , F03G7/04 , E02B9/06
摘要： A solution mined cavity system and method is disclosed. The system comprises an underground cavity created by solution mining in salt deposits, an upper water reservoir, tubing means adapted to lead water from the upper water reservoir into the 5underground cavity and out of the underground cavity, and pumping means adapted to contribute to pumping water from the upper water reservoir via the tubing means out of the cavity.0

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