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31. 发明授权

US5591493A Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效
标题翻译：在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5591493A
公开(公告)日：1997-01-07
申请号：US472606
申请日：1995-06-07
申请人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
发明人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译：具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。

32. 发明授权

US5580385A Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效
标题翻译：在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5580385A
公开(公告)日：1996-12-03
申请号：US269414
申请日：1994-06-30
申请人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
发明人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译：具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。

33. 发明授权

US5345534A Semiconductor wafer heater with infrared lamp module with light blocking means 失效
标题翻译：带红外灯模块的半导体晶片加热器具有遮光装置
公开(公告)号：US5345534A
公开(公告)日：1994-09-06
申请号：US39720
申请日：1993-03-29
申请人： Habib N. Najm , Steve S. Huang , Cecil J. Davis , Robert T. Matthews
发明人： Habib N. Najm , Steve S. Huang , Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/26 , H01L21/00 , H01L21/324 , H01L21/20
CPC分类号： H01L21/67115
摘要： A thin reflective cylindrical baffle [20] in a radiant lamp heater is provided in the space below a plurality of heating bulbs [2,4,6] (arranged in a center position and around a middle and outer ring) and above a quartz window [12]. The baffle diameter is such that it fits within the annular space between the middle [4] and outer [6]ring of bulbs. The baffle which blocks a predetermined amount of light generated by the lamp bulbs [20] allows improved controllability of wafer temperature profile--for a wafer heated by a radiant lamp heater.
摘要翻译：辐射灯加热器中的薄反射圆柱形挡板[20]设置在多个加热灯泡[2,4,6]下方的空间（布置在中心位置并且围绕中间和外环）以及石英窗 [12]。挡板直径使其适合在中间[4]和外部[6]球形环之间的环形空间内。阻挡由灯泡[20]产生的预定量的光的挡板允许改善由辐射灯加热器加热的晶片的晶片温度分布的可控制性。

34. 发明授权

US5102231A Semiconductor wafer temperature measurement system and method 失效
标题翻译：半导体晶圆温度测量系统及方法
公开(公告)号：US5102231A
公开(公告)日：1992-04-07
申请号：US647085
申请日：1991-01-29
申请人： Lee M. Loewenstein , John D. Lawrence , Wayne G. Fisher , Cecil J. Davis
发明人： Lee M. Loewenstein , John D. Lawrence , Wayne G. Fisher , Cecil J. Davis
IPC分类号： G01K5/52
CPC分类号： G01K5/52
摘要： A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.
摘要翻译：用于测量半导体晶片12的温度的系统包括光源14，可操作以确定光强度的光电检测器20和来自分束器16的预定固定位置的反射镜18.部件被定位成使得光从光源14入射分束器16，随后从反射镜18和晶片12反射并被光电检测器20接收。晶片12的温度变化基于接收光强度的变化来计算，取决于晶片的膨胀/收缩。可以基于已知的参考温度和晶片12温度的变化来计算绝对温度。还公开了一种用于测量包括使用多个反射镜和两个分束器的半导体晶片的温度的第二系统和方法。

35. 发明授权

US4923562A Processing of etching refractory metals 失效
$Processing of etching refractory metals$
标题翻译：蚀刻难熔金属的加工
公开(公告)号：US4923562A
公开(公告)日：1990-05-08
申请号：US279320
申请日：1988-12-01
申请人： Rhett B. Jucha , Cecil J. Davis
发明人： Rhett B. Jucha , Cecil J. Davis
IPC分类号： H01L21/3213
CPC分类号： H01L21/32136
摘要： A processing apparatus and method for anisotropically etching thin film metal (e.g. tungsten) under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a bromine source (such as HBr), plus a very weak oxygen source (e.g. carbon monoxide). This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
摘要翻译：一种用于在等离子体轰击条件下通过使用包括氟源（例如SF 6）加溴源（例如HBr）的进料气体混合物加上非常弱的氧气的各向异性蚀刻薄膜金属（例如钨）的加工装置和方法来源（如一氧化碳）。该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。

36. 发明授权

US4911103A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4911103A
公开(公告)日：1990-03-27
申请号：US274611
申请日：1988-11-22
申请人： Cecil J. Davis , Dean W. Freeman , Robert T. Matthews , Joel T. Tomlin , Rhett B. Jucha
发明人： Cecil J. Davis , Dean W. Freeman , Robert T. Matthews , Joel T. Tomlin , Rhett B. Jucha
IPC分类号： C23C16/54 , C30B31/10 , C30B35/00 , H01L21/00
CPC分类号： H01L21/67017 , C23C16/54 , C30B31/103 , C30B35/005
摘要： A process module which is compatible with a system using primarily vacuum wafer transport, but which permits processing multiple slices in parallel in a single module. This is accomplished by using notched quartz arms in the module, so that the transfer arm can place each of several wafers into one set of notches in the quartz arms. Optionally, a vertical degree of movement in the arm may be used to accomplish this, and the quartz arms may be immovable. This means that the port from the multi-wafer module into the wafer transfer system must be high enough to accommodate the necessary vertical movement of the transfer arm. After the transfer arm has placed the wafer on the quartz arms, the process module can be elevated to close around the set of wafers and made a seal. If the wafer transport arm is already configured to access wafers directly out of a multi-wafer vacuum wafer carrier, the necessary degree of freedom will necessarily already be present in the transfer arm, and at least one port of the necessary vertical dimensions will necessarily also be already present (between the loadlock and the transfer chamber). This is particularly useful in combination with relatively slow processes, such as thick field oxidation, long anneals, or long furnace heating steps used to drive in diffusions.
摘要翻译：一种与使用主要是真空晶片传输的系统兼容的处理模块，但是允许在单个模块中并行处理多个片段。这通过在模块中使用缺口石英臂来实现，使得传输臂可以将几个晶片中的每一个放置在石英臂中的一组凹口中。可选地，可以使用臂中的垂直移动度来实现这一点，并且石英臂可以是不可移动的。这意味着从多晶片模块到晶片传送系统的端口必须足够高以适应传送臂的必要的垂直移动。在传送臂已经将晶片放置在石英臂上之后，可以将处理模块升高以围绕该组晶片闭合并且形成密封。如果晶片传送臂已经被配置成直接从多晶片真空晶片载体中进入晶片，则必需的自由度必然已经存在于传送臂中，并且必要的垂直尺寸的至少一个端口也将必然地已经存在（在负载锁和转移室之间）。这特别适用于相对较慢的工艺，例如厚场氧化，长退火或用于扩散驱动的长炉加热步骤。

37. 发明授权

US4882008A Dry development of photoresist 失效
标题翻译：光刻胶的干燥发展
公开(公告)号：US4882008A
公开(公告)日：1989-11-21
申请号：US216884
申请日：1988-07-08
申请人： Cesar M. Garza , Monte A. Douglas , Lee M. Loewenstein , Cecil J. Davis
发明人： Cesar M. Garza , Monte A. Douglas , Lee M. Loewenstein , Cecil J. Davis
IPC分类号： G03F7/26 , H01L21/311
CPC分类号： H01L21/31138 , G03F7/265
摘要： A process for developing a photolithographic pattern on the surface of an exposed workpiece in a process chamber; disposing the workpiece in a process chamber; heating the workpiece and introducing a silylating agent to the process chamber and to a face of the workpiece to be processed; generating activated species from a source of oxygen; and introducing the activated species to the face of the workpiece.
摘要翻译：一种用于在处理室中暴露的工件的表面上显影光刻图案的工艺; 将工件放置在处理室中; 加热工件并将甲硅烷基化剂引入处理室和待加工的工件的表面; 从氧源产生活化物质; 并将活化物质引入到工件的表面。

38. 发明授权

US4875989A Wafer processing apparatus 失效
标题翻译：晶圆加工设备
公开(公告)号：US4875989A
公开(公告)日：1989-10-24
申请号：US283036
申请日：1988-12-05
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
IPC分类号： G03F7/16 , H01L21/00
CPC分类号： H01L21/67017 , G03F7/168
摘要： A processing apparatus and method for edge-preferential processing of partially fabricated integrated circuit wafers or of other substantially flat and thin workpieces. A plasma remote from the workpiece is used to generate activated species, and a baffle which is in proximity to the wafer face but not in contact with it is used to direct the stream of activated species. This module can be set up to perform both edge bead removal and bake of spun-on photoresist.
摘要翻译：一种用于部分制造的集成电路晶片或其它基本上平坦和薄的工件的边缘优先处理的处理装置和方法。使用远离工件的等离子体产生活化物质，并且靠近晶片表面而不与其接触的挡板用于引导活化物质流。该模块可以设置为执行旋转光刻胶的边缘珠去除和烘烤。

39. 发明授权

US4842686A Wafer processing apparatus and method 失效
标题翻译：晶圆加工设备及方法
公开(公告)号：US4842686A
公开(公告)日：1989-06-27
申请号：US75016
申请日：1987-07-17
申请人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
发明人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
IPC分类号： H01L21/302 , C23C16/48 , C23C16/517 , C23C16/54 , G03F7/20 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/677
CPC分类号： G03F7/70808 , C23C16/482 , C23C16/517 , C23C16/54 , G03F7/70866
摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

40. 发明授权

US4832778A Processing apparatus for wafers 失效
标题翻译：晶圆加工设备
公开(公告)号：US4832778A
公开(公告)日：1989-05-23
申请号：US201299
申请日：1988-05-27
申请人： Cecil J. Davis , Dean W. Freeman , Robert T. Matthews , Joel T. Tomlin
发明人： Cecil J. Davis , Dean W. Freeman , Robert T. Matthews , Joel T. Tomlin
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/6719 , H01L21/67751 , H01L21/68785
摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpieces which may be loaded into the chamber.
摘要翻译：一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。压力容器可以非常小，即具有总加压体积，其几乎所有内部点都可以装载到腔室中的一个工件的一或两厘米内。

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