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31. 发明授权

US06716571B2 Selective photoresist hardening to facilitate lateral trimming 有权
标题翻译：选择性光致抗蚀剂硬化以方便侧面修剪
公开(公告)号：US06716571B2
公开(公告)日：2004-04-06
申请号：US09819343
申请日：2001-03-28
申请人： Calvin T. Gabriel , Harry J. Levinson , Uzodinma Okoroanyanwu
发明人： Calvin T. Gabriel , Harry J. Levinson , Uzodinma Okoroanyanwu
IPC分类号： G03F700
CPC分类号： H01L21/28123 , Y10S430/143
摘要： A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer has different etch rates in the vertical and horizontal directions. The modified photoresist layer is trimmed with a plasma etch. A feature included in the trimmed photoresist layer has a sub-lithographic lateral dimension.
摘要翻译：本文公开了在集成电路中形成次光刻特征的工艺。该方法包括在图案化和显影之后但在其用于对下面的层进行图案化之前修饰光致抗蚀剂层。改性光致抗蚀剂层在垂直和水平方向具有不同的蚀刻速率。用等离子体蚀刻修整修饰的光致抗蚀剂层。修整的光致抗蚀剂层中包括的特征具有亚光刻横向尺寸。

32. 发明授权

US06630288B2 Process for forming sub-lithographic photoresist features by modification of the photoresist surface 失效
公开(公告)号：US06630288B2
公开(公告)日：2003-10-07
申请号：US09819342
申请日：2001-03-28
申请人： Jeffrey A. Shields , Uzodinma Okoroanyanwu , Chih-Yuh Yang
发明人： Jeffrey A. Shields , Uzodinma Okoroanyanwu , Chih-Yuh Yang
IPC分类号： G03F700
CPC分类号： H01L21/28123 , H01L21/32139 , Y10S430/143
摘要： A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer has different etch rates in the vertical and horizontal directions. The modified photoresist layer is trimmed with a plasma etch. A feature included in the trimmed photoresist layer has a sub-lithographic lateral dimension.

33. 发明授权

US06589713B1 Process for reducing the pitch of contact holes, vias, and trench structures in integrated circuits 有权
标题翻译：用于减小集成电路中接触孔，通路和沟槽结构的间距的方法
公开(公告)号：US06589713B1
公开(公告)日：2003-07-08
申请号：US09771820
申请日：2001-01-29
申请人： Uzodinma Okoroanyanwu
发明人： Uzodinma Okoroanyanwu
IPC分类号： G03F700
CPC分类号： G03F7/70466 , G03F7/7045 , Y10S430/143
摘要： An integrated circuit fabrication process to pattern features having reduced pitch is disclosed herein. The process includes reducing the width of a developed exposed area of a patterned photoresist layer provided over a substrate before patterning the substrate. The process further includes additionally patterning the patterned photoresist layer using the previously used mask or reticle to form a first feature and a second feature. The distance between adjacent first and second features is smaller than the distance between either of adjacent first features or adjacent second features.
摘要翻译：本文公开了一种用于对具有减小间距的特征进行图案化的集成电路制造工艺。该方法包括在图案化衬底之前减小设置在衬底上的图案化光致抗蚀剂层的显影曝光区域的宽度。该方法还包括使用先前使用的掩模或掩模版附加图案化图案化的光致抗蚀剂层以形成第一特征和第二特征。相邻的第一和第二特征之间的距离小于相邻的第一特征或相邻的第二特征之间的距离。

34. 发明授权

US6103445A Photoresist compositions comprising norbornene derivative polymers with acid labile groups 失效
标题翻译：包含具有酸不稳定基团的降冰片烯衍生物聚合物的光致抗蚀剂组合物
公开(公告)号：US6103445A
公开(公告)日：2000-08-15
申请号：US814719
申请日：1997-03-07
申请人： C. Grant Willson , Uzodinma Okoroanyanwu , David Medieros
发明人： C. Grant Willson , Uzodinma Okoroanyanwu , David Medieros
IPC分类号： G03F7/004 , G03F7/039 , G03C1/492
CPC分类号： G03F7/0045 , G03F7/039
摘要： Provided herein are photoresist compositions for use particularly in 193 nm lithography. These compositions generally comprise a polymer of norbornene and a photo acid generator. The disclosed compositions provide transparency at wavelengths of approximately 190-200 nm, combined with high etch resistance. The polymers also provide hydrophilicity for good positive-tone development characteristics and high glass transition temperatures. Also disclosed is a process for microfabrication utilizing the claimed compositions. A further aspect of the invention is a plasticizer comprising 4,8-di-t-butyl-tricyclo(5.2.1.0.sup.2,6)decanedicarboxylate.
摘要翻译：本文提供了特别用于193nm光刻的光致抗蚀剂组合物。这些组合物通常包含降冰片烯和光酸产生剂的聚合物。所公开的组合物在大约190-200nm的波长处提供透明度，结合高耐蚀刻性。聚合物还提供亲水性以获得良好的正音发展特性和高玻璃化转变温度。还公开了利用所要求保护的组合物的微细加工方法。本发明的另一方面是包含4,8-二叔丁基三环（5.2.1.02,6）癸烷二羧酸酯的增塑剂。

35. 发明授权

US08852854B2 Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis 有权
标题翻译：使用氧化型催化在半导体晶片上形成光致抗蚀剂图案的方法
公开(公告)号：US08852854B2
公开(公告)日：2014-10-07
申请号：US11709721
申请日：2007-02-21
申请人： Thomas Wallow , Uzodinma Okoroanyanwu
发明人： Thomas Wallow , Uzodinma Okoroanyanwu
IPC分类号： G03F7/40 , G03F7/32
CPC分类号： G03F7/32
摘要： According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.
摘要翻译：根据一个示例性实施例，在半导体晶片上形成光致抗蚀剂图案的方法包括在半导体晶片上形成包含有机聚合物基质的光致抗蚀剂。该方法还包括将光致抗蚀剂暴露于图案化的辐射。该方法还包括在将光致抗蚀剂暴露于图案辐射之后烘烤光致抗蚀剂。该方法还包括将氧化剂施加到光致抗蚀剂以产生对应于图案化辐射的光致抗蚀剂图案。

36. 发明授权

US07985513B2 Fluorine-passivated reticles for use in lithography and methods for fabricating the same 有权
标题翻译：用于光刻的氟钝化掩模版及其制造方法
公开(公告)号：US07985513B2
公开(公告)日：2011-07-26
申请号：US12050383
申请日：2008-03-18
申请人： Harry J. Levinson , Uzodinma Okoroanyanwu , Anna Tchikoulaeva , Rene Wirtz
发明人： Harry J. Levinson , Uzodinma Okoroanyanwu , Anna Tchikoulaeva , Rene Wirtz
IPC分类号： G03F1/00
CPC分类号： G03F1/68 , G03F1/46 , G03F1/50 , G03F1/54 , G03F1/58
摘要： Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.
摘要翻译：提供用于光刻的氟钝化的掩模版以及制造和使用这种掩模版的方法。根据一个实施例，一种用于执行光刻的方法包括在照明源和目标半导体晶片之间放置氟钝化的掩模版，并使电磁辐射从照明源通过氟钝化掩模版到达目标半导体晶片。在另一个实施例中，氟钝化的掩模版包括衬底和覆盖衬底的图案化的氟钝化吸收材料层。根据另一实施例，一种用于光刻中使用的掩模版的制造方法包括提供基板并形成覆盖在基板上的氟钝化的吸收材料层。

37. 发明申请

US20080233494A1 Method for forming a high resolution resist pattern on a semiconductor wafer 有权
标题翻译：在半导体晶片上形成高分辨率抗蚀剂图案的方法
公开(公告)号：US20080233494A1
公开(公告)日：2008-09-25
申请号：US11726433
申请日：2007-03-22
申请人： Uzodinma Okoroanyanwu , Harry J. Levinson , Ryoung Han Kim , Thomas Wallow
发明人： Uzodinma Okoroanyanwu , Harry J. Levinson , Ryoung Han Kim , Thomas Wallow
IPC分类号： G03C11/00
CPC分类号： G03F7/38
摘要： In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.
摘要翻译：在一个公开的实施例中，在半导体晶片上形成高分辨率抗蚀剂图案的方法包括在半导体晶片上形成的材料层上形成包含例如聚合物基质和催化物质的抗蚀剂层; 将抗蚀剂层暴露于图案化辐射; 以及在后曝光烘烤处理期间向半导体晶片施加磁场。在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。在其它实施例中，图案化辐射源可以是例如电子束或离子束。在一个实施方案中，聚合物基质是有机聚合物基质，例如苯乙烯，丙烯酸酯或甲基丙烯酸酯。在一个实施方案中，催化物质可以是例如酸，碱或氧化剂。

38. 发明申请

US20080152873A1 EUV pellicle and method for fabricating semiconductor dies using same 有权
标题翻译： EUV防护薄膜和使用其制造半导体管芯的方法
公开(公告)号：US20080152873A1
公开(公告)日：2008-06-26
申请号：US11646053
申请日：2006-12-26
申请人： Uzodinma Okoroanyanwu , Ryoung-Han Kim
发明人： Uzodinma Okoroanyanwu , Ryoung-Han Kim
IPC分类号： G03F1/00 , B32B3/00 , H01L21/50
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70983 , Y10T428/24802
摘要： According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for use with a lithographic mask comprises a carbon nanotube film. The carbon nanotube EUV pellicle can be mounted on the lithographic mask. The carbon nanotube EUV pellicle protects the lithographic mask from contamination by undesirable particles and also prevents the undesirable particles from forming a focused image on the surface of a semiconductor wafer during fabrication; while advantageously, the carbon nanotube pellicle has a high level of EUV light transmittance.
摘要翻译：根据一个示例性实施例，用于光刻掩模的极紫外（EUV）防护薄膜包括碳纳米管膜。碳纳米管EUV防护薄膜可安装在光刻掩模上。碳纳米管EUV防护薄膜保护光刻掩模免受不期望的颗粒的污染，并且还防止不期望的颗粒在制造期间在半导体晶片的表面上形成聚焦图像; 同时有利地，碳纳米管薄膜具有高水平的EUV透光率。

39. 发明授权

US07012013B1 Dielectric pattern formation for organic electronic devices 失效
标题翻译：有机电子器件的介质图案形成
公开(公告)号：US07012013B1
公开(公告)日：2006-03-14
申请号：US10726868
申请日：2003-12-03
申请人： Uzodinma Okoroanyanwu , Nicolay F. Yudanov
发明人： Uzodinma Okoroanyanwu , Nicolay F. Yudanov
IPC分类号： H01L21/20
CPC分类号： H01L21/321 , H01L21/76886 , H01L27/10
摘要： Methods and systems are provided for patterning a non conductive dielectric on a surface of a conductive polymer. The conductive polymer can be part of an organic memory cell. Hydrogen ions created form molecular hydrogen being exposed to short wave length radiation, are employed as mobile positive ion charge carriers to create a non-conductive die-electric pattern on a conductive and/or semiconductive polymer surface of the organic memory cell. Such process reduces number of masking steps performed. In addition, the process is scalable with lithographic wave length and can be performed on wide spread tool sets and photoresist material available in commercial market.
摘要翻译：提供了用于在导电聚合物的表面上图案化非导电电介质的方法和系统。导电聚合物可以是有机记忆电池的一部分。由分子氢形成的氢离子暴露于短波长辐射，被用作移动正离子电荷载体，以在有机存储单元的导电和/或半导体聚合物表面上产生非导电的模 - 电图案。这样的处理减少了执行的掩蔽步骤的数量。此外，该工艺可以利用光刻波长度进行扩展，并且可以在商业市场上可用的广泛的工具组和光致抗蚀剂材料上进行。

40. 发明授权

US06764808B2 Self-aligned pattern formation using wavelenghts 有权
标题翻译：使用波长的自对准图案形成
公开(公告)号：US06764808B2
公开(公告)日：2004-07-20
申请号：US10083914
申请日：2002-02-27
申请人： Uzodinma Okoroanyanwu , Armando C. Bottelli
发明人： Uzodinma Okoroanyanwu , Armando C. Bottelli
IPC分类号： G03F720
CPC分类号： G03F7/7045 , G03F7/0757 , G03F7/095 , G03F7/2022
摘要： An integrated circuit fabrication process for patterning features at sub-lithographic dimensions is disclosed herein. The process includes sequentially exposing a of a film of arylalkoxysilane with a photobase generator, and catalytic amount of water coated on top of a conventional lipophilic photoresist layer provided over a substrate and exposed to a radiation at a first and a second lithographic wavelengths. The first lithographic wavelength is shorter than the second lithographic wavelength. Exposure to the first lithographic wavelength causes a self-aligned mask to form within the photoresist layer.
摘要翻译：本文公开了用于在亚光刻尺寸下构图特征的集成电路制造工艺。该方法包括用光碱产生剂连续地曝光芳基烷氧基硅烷的膜，以及将涂覆在传统的亲油性光致抗蚀剂层的顶部上的催化量的水涂覆在衬底上并暴露于第一和第二光刻波长的辐射。第一光刻波长比第二光刻波长短。暴露于第一光刻波长会导致在光致抗蚀剂层内形成自对准掩模。

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