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    • 31. 发明授权
    • Method for producing polycrystalline silicon
    • 多晶硅的制造方法
    • US07691357B2
    • 2010-04-06
    • US12190229
    • 2008-08-12
    • Takaaki ShimizuKyoji OguroTakeshi Aoyama
    • Takaaki ShimizuKyoji OguroTakeshi Aoyama
    • C01B33/08C07F7/00
    • C23C16/24C01B33/03C01B33/1071C01B33/10721C23C16/4412C23C16/45593
    • A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
    • 将多晶硅沉积在CVD反应器中的基材上产生的副产物混合物与氯反应,在氯化反应容器中形成四氯硅烷(STC)流出物,并使四氯硅烷(STC)馏出物反应 在氢化反应容器中用氢气转化为三氯硅烷(TCS)。 在氯化工序中,上述副产物混合物中含有的聚硅烷可以作为制造多晶硅的原料被有效地再循环,从而可提高生产工艺的产率。 此外,在氯化工序中,沸点接近TCS的甲基氯硅烷被高氯化转化为沸点较高的高氯甲基氯硅烷,有利于将高氯甲基氯代硅烷分离成高浓度, 减少多晶硅的碳污染。
    • 32. 发明授权
    • Method for producing trichlorosilane
    • 制备三氯硅烷的方法
    • US07691356B2
    • 2010-04-06
    • US12190151
    • 2008-08-12
    • Takaaki ShimizuKyoji Oguro
    • Takaaki ShimizuKyoji Oguro
    • C01B33/08C07F7/00
    • C01B33/1071C23C16/24C23C16/4412C23C16/45593
    • A by-product mixture produced in a process for producing polycrystalline silicon is made to react with chlorine to form tetrachlorosilane (STC) distillate in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and inhibits carbon from contaminating the polycrystalline silicon. A donor/acceptor eliminator is provided in the circulation cycle for producing TCS, and accordingly there is no need to take out a by-product produced in the process for producing TCS to the outside of the system, which can highly purify the TCS.
    • 在多晶硅的制造方法中制造的副产物混合物与氯反应,在氯化反应容器中形成四氯硅烷(STC)馏出物,使四氯硅烷(STC)馏出物在氢化反应容器中与氢反应 转化为三氯硅烷(TCS)。 在氯化步骤中,沸点接近TCS的甲基氯硅烷被高氯化转化为沸点高的高氯甲基氯硅烷,有利于将高氯甲基氯硅烷分离成高浓度,并抑制碳 污染多晶硅。 在生产TCS的循环循环中提供了供体/受体消除器,因此不需要在系统外部将TCS生产过程中产生的副产物取出,这可以高度净化TCS。
    • 33. 发明授权
    • Liquid crystal composition and liquid crystal display element comprising
the same
    • 液晶组合物和包含该液晶组合物的液晶显示元件
    • US5980778A
    • 1999-11-09
    • US732632
    • 1996-10-16
    • Takaaki ShimizuTatsushi KanekoTsutomu Ogihara
    • Takaaki ShimizuTatsushi KanekoTsutomu Ogihara
    • C09K19/40C09K19/42C09K19/34C07F7/08C09K19/30
    • C09K19/42C09K19/406
    • The invention presents an excellent liquid crystal display composition possessing a negative dielectric anisotropy, comprising one or more compounds selected from the group consisting of formulas I, II, III, IV and V, ##STR1## where R.sup.1 is alkyl, alkoxyalkyl, mono- or difluoroalkyl, or alkenyl, with each group having 2 to 7 carbon atoms; h, i, j, and k denote 0 or 1 with proviso that i+j=1; m is 0, 1 or 2; a six-membered ring expressed by A, B, or C respectively represents any one of trans-1-sila-1,4-cyclohexylene, trans-4-sila-1,4-cyclohexylene, or trans-1,4-cyclohexylene group; L represents F; and L.sup.1 and L.sup.2 represent H or F; n is 0, 1 or 2; and R.sup.2 is H, R.sup.1 or OR.sup.1, in which at least one compound thereof contains trans-1-sila-1,4-cyclohexylene group or trans-4-sila-1,4-cyclohexylene group.
    • 本发明提供了具有负介电各向异性的优异的液晶显示组合物,其包含一种或多种选自式I,II,III,IV和V的化合物,其中R 1是烷基,烷氧基烷基,单或二氟烷基,或 烯基,每个基团具有2至7个碳原子; h,i,j和k表示0或1,条件是i + j = 1; m为0,1或2; 由A,B或C表示的六元环分别表示反式-1-硅烷-1,4-亚环己基,反式-4-硅烷-1,4-亚环己基或反式-1,4-亚环己基 组; L代表F; L1和L2代表H或F; n为0,1或2; R2为H,R1或OR1,其中至少一种化合物含有反式-1-硅烷-1,4-亚环己基或反式-4-硅烷-1,4-亚环己基。