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    • 36. 发明授权
    • Variable energy radio frequency quadrupole linac
    • 可变能量射频四极直线加速器
    • US5451847A
    • 1995-09-19
    • US193424
    • 1994-02-08
    • Tetsuya Nakanishi
    • Tetsuya Nakanishi
    • H05H9/00H01J23/00
    • H05H9/00
    • A variable energy radio frequency quadrupole linac for emitting focused and accelerated beams by changing radio frequency energy levels, wherein the accelerating cavity is divided by a plane perpendicular to the beam direction and in a radio frequency sense, and the radio frequency power level in the downstream accelerating cavity is made to be lower than that in the upstream accelerating cavity, one of the divided cavities being self oscillated, and the other being separately oscillated, a separating plate being provided between separated electrodes, the radio frequency phases in the upstream cavity and the downstream cavity being relatively changeable, and a thin plate region being provided in the periphery of a beam passing window on the separating plate, thereby the power in the cavity can be lowered without expanding the energy spread of the emitted beams so much.
    • 一种用于通过改变射频能量水平来发射聚焦和加速光束的可变能量射频四极直线加速器,其中所述加速腔被垂直于所述波束方向和射频方向的平面划分,并且所述下游的射频功率电平 使加速腔低于上游加速腔中的一个,分离腔中的一个自振荡,另一个分开摆动,分离板设置在分离的电极之间,上游腔中的射频相和 下游腔相对可变,并且在分隔板上的光束通过窗口的周边设置有薄板区域,从而可以降低空腔中的功率,而不会扩大发射的光束的能量扩散。
    • 37. 发明授权
    • Ion implantation apparatus
    • 离子注入装置
    • US5025167A
    • 1991-06-18
    • US533769
    • 1990-06-06
    • Soichiro OkudaTetsuya NakanishiShigeo SasakiKazuhiko Noguchi
    • Soichiro OkudaTetsuya NakanishiShigeo SasakiKazuhiko Noguchi
    • H01J37/09H01J37/304H01J37/317
    • H01J37/09H01J37/304H01J37/3171
    • An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
    • 离子注入装置包括离子束测量装置,用于测量和分析投影在用于离子注入的基板上的光束的形状和由离子束获得的电流量,分析狭缝部件,其具有宽度可变的开口, 位于离子束轨道中以仅提取注入离子;以及成形狭缝构件,其具有位于分析狭缝构件后面的宽度可变的开口,以确定要投影到用于离子注入的衬底上的光束的形状 其中分析狭缝部件和成形狭缝部件的开口的宽度基于由离子束测量装置测量的结果获得的光束形状和电流量而改变。