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31. 发明申请

US20050167573A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050167573A1
公开(公告)日：2005-08-04
申请号：US10952914
申请日：2004-09-30
申请人： Junya Maruyama , Toru Takayama , Masafumi Morisue , Ryosuke Watanabe , Eiji Sugiyama , Susumu Okazaki , Kazuo Nishi , Jun Koyama , Takeshi Osada , Takanori Matsuzaki
发明人： Junya Maruyama , Toru Takayama , Masafumi Morisue , Ryosuke Watanabe , Eiji Sugiyama , Susumu Okazaki , Kazuo Nishi , Jun Koyama , Takeshi Osada , Takanori Matsuzaki
IPC分类号： H01L27/146 , H01J40/14 , H01L21/82 , H01L27/14 , H01L31/00 , H01L31/10
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/14609 , H01L27/14665 , H01L2224/16225
摘要： The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.
摘要翻译：本发明的目的是使元件占据的面积小型化，并将大量的元件集成在有限的区域中，使传感器元件具有更高的输出和更小的尺寸。在本发明中，通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶体）的TFT的输出放大器电路来实现更高的输出和小型化硅膜）用作塑料膜基材上的活性层，其能够抵抗诸如焊料回流工艺的安装过程中的温度。根据本发明，可以获得能够抵抗弯曲应力的传感器元件。

32. 发明授权

US5234150A Method of manufacturing spotwise partial clad material 失效
标题翻译：制造SPOTWISE部分覆盖材料的方法
公开(公告)号：US5234150A
公开(公告)日：1993-08-10
申请号：US582844
申请日：1990-10-11
申请人： Kazuhiro Yamamoto , Shin Nemoto , Jun Okamoto , Susumu Okazaki
发明人： Kazuhiro Yamamoto , Shin Nemoto , Jun Okamoto , Susumu Okazaki
IPC分类号： B23K20/04 , B23K31/02 , B29C69/00 , H01L21/48 , H01L21/52
CPC分类号： B23K26/22 , B23K20/04 , B23K26/0846 , B23K26/40 , B23K31/02 , B29C69/006 , H01L21/4821 , H01L21/4839 , H01L24/743 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/18 , B23K2203/26 , H01L2224/743 , H01L2924/12042 , H01L2924/14
摘要： The present invention relates to a method of efficiently manufacturing a spotwise partial clad material, which is used for a lead frame of a semiconductor integrated circuit such as a flat package. According to the method, a substrate material to which metal foil pieces having a determined size have been tacked at a highly accurate pitch is prepared by continuously pre-tacking a metal foil as fed at a constant feeding rate to a substrate material as fed also at a constant feeding rate at determined intervals by spot-welding by any of resistance welding, ultrasonic welding or laser welding or thereafter cutting and removing the unnecessary parts by laser-cutting or by the use of rotary cutters, or alternatively, it is prepared by cutting a metal foil as fed at a constant feeding rate with a punch with simultaneously tacking the resulting metal foil piece to a substrate material as fed also at a constant feeding rate by spot-welding of using the punch as an electroconductive material part. The obtained metal-tacked substrate material is pressure-welded and rolled, whereupon the intended and determined thickness of the rolled material is ensured by cascade control for load-constant control and elongation percentage-constant control and the intended load in rolling is controlled by detecting the intended position from the pitch of the rolled material and the intended standard point of the non-rolled material.
摘要翻译： PCT No.PCT / JP90 / 01195 Sec。 371 1990年10月11日第 102（e）1990年10月11日PCT PCT 1990年9月19日PCT公布。公开号WO91 / 04123 日本1991年04月4日。本发明涉及一种有效制造点状局部包覆材料的方法，该方法用于诸如扁平封装的半导体集成电路的引线框架。根据该方法，以高精度的间距将具有确定的尺寸的金属箔片固定到其上的基板材料通过将以恒定的进给速率馈送的金属箔连续地预定位到基板材料上来制备，通过电阻焊接，超声波焊接或激光焊接中的任何一种通过点焊进行确定的间隔的恒定进给速率，或者之后通过激光切割或通过使用旋转切割机切割和去除不需要的部分，或者通过切割金属箔以恒定的进给速度用冲头进给，同时将所得的金属箔片固定在基板材料上，该基板材料也以恒定的进给速率通过使用冲头作为导电材料部件进行点焊来进给。将得到的金属粘合基材进行压焊和轧制，通过级联控制负载常数控制和伸长百分比恒定控制来确保轧制材料的预定和确定的厚度，并且通过检测来控制轧制中的预期负荷来自轧制材料的间距的预期位置和未轧制材料的目标标准点。

33. 发明授权

US4982993A Movable cowl cover 失效
标题翻译：可移动罩盖
公开(公告)号：US4982993A
公开(公告)日：1991-01-08
申请号：US234225
申请日：1988-08-02
申请人： Susumu Okazaki , Takeshi Yamamoto , Shinshi Kajimoto , Takeshi Konishi , Naogi Hisanaga , Takahiko Tanaka
发明人： Susumu Okazaki , Takeshi Yamamoto , Shinshi Kajimoto , Takeshi Konishi , Naogi Hisanaga , Takahiko Tanaka
IPC分类号： B60S1/04 , B62D25/08
CPC分类号： B60S1/0405
摘要： A cowl box is provided in a vehicle body between a rear edge of an engine hood and a windshield. The front hood is mounted on the vehicle body to be swung open and closed about a hinge mounted on the vehicle body on the rear side of the rear edge of the front hood. The cowl cover is opened and closed by a driving mechanism comprising a four-bar link mechanism including first and second links each of which is pivoted at one end thereof on a member mounted on the front hood and at the other end on the lower surface of the cowl cover and which extend substantially in parallel spaced from each other in the longitudinal direction of the vehicle body, a driving motor and a connecting mechanism for transmitting the output power of the driving motor to the four-bar link mechanism.

34. 发明授权

US4687996A Method and apparatus for measuring remaining charge of galvanic cell 失效
标题翻译：用于测量原电池剩余电量的方法和装置
公开(公告)号：US4687996A
公开(公告)日：1987-08-18
申请号：US699090
申请日：1985-02-07
申请人： Susumu Okazaki , Shunichi Higuchi , Osamu Nakamura , Sachio Takahashi
发明人： Susumu Okazaki , Shunichi Higuchi , Osamu Nakamura , Sachio Takahashi
IPC分类号： G01R31/36 , G01N27/46 , G08B21/00 , H02J7/04
CPC分类号： G01R31/36
摘要： A method and apparatus for measuring the remaining charge of a galvanic cell effects the measurement of the remaining charge by superimposing an AC voltage or current on DC voltage or current issuing from the cell to produce a higher harmonic current or voltage, determining the value corresponding to a higher harmonic component of n'th order from the higher harmonic current or voltage, and comparing the value thus measured of the cell under test with that measured previously in the same manner of a reference galvanic cell. Since the corresponding value of the higher harmonic current or voltage of n'th order varies notably with the decrease in the remaining charge of the galvanic cell, the comparison of the found corresponding value with the reference characteristic is effected with ease and the measurement can be carried out accurately and simply.
摘要翻译：用于测量电池的剩余电荷的方法和装置通过将AC电压或电流叠加在从电池发出的DC电压或电流上产生高次谐波电流或电压来实现剩余电荷的测量，从而确定对应于从高次谐波电流或电压起n阶的高次谐波分量，并将与测得的电池相同的值与先前参考电流电池相同的方式进行比较。由于高次谐波电流或第n阶电压的对应值随着原电池的剩余电荷的减少而显着变化，因此可以容易地实现所找到的对应值与参考特性的比较，并且测量可以精确而简单地进行。

35. 发明授权

US07777840B2 Transflective liquid crystal display device having first and second data drivers and generating first and second signals of different voltage values 失效
标题翻译：具有第一和第二数据驱动器并产生不同电压值的第一和第二信号的透反射液晶显示装置
公开(公告)号：US07777840B2
公开(公告)日：2010-08-17
申请号：US11079931
申请日：2005-03-14
申请人： Hiromi Enomoto , Susumu Okazaki
发明人： Hiromi Enomoto , Susumu Okazaki
IPC分类号： G02F1/1343 , G02F1/1335
CPC分类号： G02F1/13624 , G02F1/133555 , G02F1/1393 , G02F2001/134345
摘要： A reflective electrode, a transparent electrode, a TFT connected to the reflective electrode and a TFT connected to the transparent electrode are formed in each picture element. A first data signal is written into the reflective electrode via the TFT, a second data signal is written into the transparent electrode via the TFT. In this way, the individual data signals are respectively written into the reflective electrode and the transparent electrode, and thereby excellent display quality can be obtained either when used as a transmissive liquid crystal display device or when used as a reflective liquid crystal display device.
摘要翻译：在每个像素中形成反射电极，透明电极，连接到反射电极的TFT和连接到透明电极的TFT。经由TFT将第一数据信号写入反射电极，经由TFT将第二数据信号写入透明电极。以这种方式，将各个数据信号分别写入反射电极和透明电极，从而当用作透射型液晶显示装置时或当用作反射型液晶显示装置时，可以获得优异的显示质量。

36. 发明授权

US07704765B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07704765B2
公开(公告)日：2010-04-27
申请号：US11889110
申请日：2007-08-09
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离，因此通过热处理使剥离层结晶而施加应力。因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性在基板上。

37. 发明授权

US07663590B2 Flicker-constrained liquid crystal display 失效
标题翻译：闪烁约束液晶显示
公开(公告)号：US07663590B2
公开(公告)日：2010-02-16
申请号：US11432534
申请日：2006-05-12
申请人： Susumu Okazaki
发明人： Susumu Okazaki
IPC分类号： G09G3/36
CPC分类号： G09G3/3655 , G09G2310/0235 , G09G2310/0254 , G09G2320/0233 , G09G2320/0247
摘要： A liquid crystal display has pixel electrodes, a common electrode, a liquid crystal layer provided between the pixel electrodes and the common electrode, and a back light that supplies light transmitting through the liquid crystal layer, further has a control circuit that applies a drive voltage corresponding to image data between the pixel electrodes and the common electrode such that the polarity of the drive voltage is inverted for each predetermined period. Within a frame period, the control circuit applies a drive voltage of a first polarity in a first period, applies a drive voltage of a second polarity opposite to the first polarity, which is the same voltage as the drive voltage of the first polarity, in a second period after the first period, and controls such that the back light is turned off in the first period and turned on in the second period.
摘要翻译：液晶显示器具有像素电极，公共电极，设置在像素电极和公共电极之间的液晶层，以及提供透过液晶层的光的背光，还具有施加驱动电压的控制电路对应于像素电极和公共电极之间的图像数据，使得驱动电压的极性在每个预定周期被反转。在一个帧周期内，控制电路在第一周期中施加第一极性的驱动电压，将与第一极性的驱动电压相同的第一极性相反的第二极性的驱动电压施加到在第一时间段之后的第二时间段，并且控制使得在第一时间段内关闭背光并在第二时段中接通背光。

38. 发明授权

US07566633B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07566633B2
公开(公告)日：2009-07-28
申请号：US11354810
申请日：2006-02-16
申请人： Jun Koyama , Koji Dairiki , Susumu Okazaki , Yoshitaka Moriya , Shunpei Yamazaki
发明人： Jun Koyama , Koji Dairiki , Susumu Okazaki , Yoshitaka Moriya , Shunpei Yamazaki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L27/283 , H01L29/78603 , H01L51/0097 , H01L2224/16225 , H01L2924/12044 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.
摘要翻译：本发明的目的是提供一种具有柔性和抗弯曲等物理变化的半导体器件以及半导体器件的制造方法。本发明的半导体器件包括设置在柔性基板上的多个晶体管，每个晶体管具有半导体膜，在半导体膜之间设置有栅极绝缘膜的栅电极和设置成覆盖该半导体膜的层间绝缘膜栅电极和设置在多个晶体管之间的弯曲部分，其中通过用具有较低弹性模量的材料填充形成在层间绝缘膜中的开口，具有较低玻璃化转变点的材料，或者具有比层间绝缘膜高的塑性的材料。

39. 发明授权

US07282380B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US07282380B2
公开(公告)日：2007-10-16
申请号：US11079262
申请日：2005-03-15
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

40. 发明申请

US20060066796A1 Liquid crystal panel and liquid crystal display device 有权
标题翻译：液晶面板和液晶显示装置
公开(公告)号：US20060066796A1
公开(公告)日：2006-03-30
申请号：US11051550
申请日：2005-02-04
申请人： Noriyuki Ohashi , Susumu Okazaki
发明人： Noriyuki Ohashi , Susumu Okazaki
IPC分类号： G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/136286
摘要： In a TFT substrate partially constituting a liquid crystal panel, gate bus lines and data bus lines are provided in orthogonal directions to each other, and a switching element (TFT) is provided in the vicinity of each of intersecting points of these bus lines. Further, Cs bus lines forming auxiliary capacitances (Cs) together with picture element electrodes each of which is provided for each picture element are provided in the direction parallel to the data bus lines. The gate bus lines, the data bus lines, and the Cs bus lines are provided at equal wiring intervals, respectively, and picture element regions each having the shape of a square are delimited by the Cs bus lines as boundaries.
摘要翻译：在部分地构成液晶面板的TFT基板中，栅极总线和数据总线相互正交地设置，并且在这些总线的各交叉点附近设置有开关元件（TFT）。此外，在平行于数据总线的方向上设置形成辅助电容（Cs）的Cs总线与每个图像元素所设置的像素电极。栅极总线，数据总线和Cs总线分别以相等的布线间隔设置，各形状为正方形的像素区域以Cs总线作为边界界定。

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