会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 31. 发明授权
    • Semiconductor integrated circuit device and method of manufacturing the
same
    • 半导体集成电路器件及其制造方法
    • US6034912A
    • 2000-03-07
    • US145076
    • 1998-09-01
    • Satoru IsomuraAtsushi ShimizuKeiichi HigetaTohru KobayashiTakeo YamadaYuko ItoKengo MiyazawaKunihiko Yamaguchi
    • Satoru IsomuraAtsushi ShimizuKeiichi HigetaTohru KobayashiTakeo YamadaYuko ItoKengo MiyazawaKunihiko Yamaguchi
    • G11C5/02H01L27/02H03K19/177
    • H03K19/1776G11C5/025H01L27/0207H03K19/1774H03K19/17792H03K19/17796
    • A memory portion and a logic circuit portion of a semiconductor device are formed on a single semiconductor substrate in which a first logic circuit block and a second logic circuit block are formed in different areas and the second logic circuit is located between a pair of memory blocks. Data stored in the pair of memory blocks are transmitted to the second logic circuit block for processing via a memory peripheral circuit. A result of the data processing is transmitted to the first logic circuit block or an external device via an input/output circuit provided in the second logic circuit block. A clock signal entered at the center portion of the semiconductor chip is supplied to a plurality of first state clock distributing circuits equidistantly disposed from the center portion and then to a plurality of second stage clock distributing circuits at least equidistantly disposed from each of the first state clock distributing circuits. Next, the clock signal is supplied to a plurality of third state clock distributing circuits equidistantly disposed from each of the second stage clock distributing circuits and then supplied to a plurality of final stage clock distributing circuits equidistantly disposed from each of the third stage clock distributing circuits. From these final stage clock distributing circuits, the clock signal is supplied to an area in whose units an internal gate array and a RAM macro cell or a logic macro cell are made replaceable with each other.
    • 半导体器件的存储部分和逻辑电路部分形成在单个半导体衬底上,其中第一逻辑电路块和第二逻辑电路块形成在不同的区域中,并且第二逻辑电路位于一对存储块之间 。 存储在一对存储器块中的数据被发送到第二逻辑电路块,以经由存储器外围电路进行处理。 经由第二逻辑电路块中提供的输入/输出电路将数据处理的结果发送到第一逻辑电路块或外部设备。 输入到半导体芯片的中心部分的时钟信号被提供给从中心部分等距设置的多个第一状态时钟分配电路,然后被提供给至少等距地从第一状态中的每个状态设置的多个第二级时钟分配电路 时钟分配电路。 接下来,时钟信号被提供给从每个第二级时钟分配电路等距离设置的多个第三状态时钟分配电路,然后提供给从每个第三级时钟分配电路等距设置的多个最后级时钟分配电路 。 从这些最终级时钟分配电路,将时钟信号提供给其单位内的内部门阵列和RAM宏小区或逻辑宏小区彼此可替换的区域。
    • 35. 发明授权
    • Apparatus for temperature measurement
    • 温度测量装置
    • US5213417A
    • 1993-05-25
    • US758606
    • 1991-09-12
    • Takeo YamadaMitsuya OtonariMasaru YoshidaNaoki HaradaShuichi TakanoShinichiro Ohtaka
    • Takeo YamadaMitsuya OtonariMasaru YoshidaNaoki HaradaShuichi TakanoShinichiro Ohtaka
    • G01K1/14G01K1/16G01K13/08
    • G01K13/08G01K1/143G01K1/16
    • A temperature measuring apparatus consisting of a sensing element, a retaining element which retains the sensing element and which is made of a thermally conductive and electrically insulative material, a holding element which holds the retaining element, and a contact mechanism which elastically contact the retaining element with the top of the surface of the measured body. The sensing element is composed of a thin film thermistor formed on the electrically insulating layer on a substrate. A film having the thermally conductive and electrically insulative material may be inserted between the measured body and the contact area of the retaining element. The retaining element is composed of the polyimide film and a flexible copper lead foil formed on the film and connected to the electrodes of the sensing element. The contact mechanism is composed of a pressing frame with at least one pressing arm which presses the contact part of the retaining element to the measured body and which is located adjacent to the contact zone.
    • 一种温度测量装置,包括感测元件,保持感测元件并由导热和电绝缘材料制成的保持元件,保持元件的保持元件,以及与保持元件弹性接触的接触机构 与测量体的表面的顶部。 感测元件由形成在基板上的电绝缘层上的薄膜热敏电阻构成。 具有导热和电绝缘材料的膜可以插入测量体和保持元件的接触区域之间。 保持元件由聚酰亚胺膜和形成在膜上并连接到感测元件的电极的柔性铜引线箔构成。 接触机构由具有至少一个按压臂的按压框构成,所述至少一个按压臂将保持元件的接触部分按压到测量体并位于接触区附近。
    • 37. 发明授权
    • Apparatus for non-contact measurement of distance from a metallic body
using a detection coil in the feedback circuit of an amplifier
    • 用于在放大器的反馈电路中使用检测线圈非接触地测量与金属体的距离的装置
    • US4030027A
    • 1977-06-14
    • US627463
    • 1975-10-30
    • Takeo YamadaSeigo AndoKatsujiro Watanabe
    • Takeo YamadaSeigo AndoKatsujiro Watanabe
    • G01B7/02G01R33/12
    • G01B7/023
    • Apparatus for non-contact measurement of the distance between a detecting coil and a metallic body mounted in confronting relation thereto comprising a differential amplifier to one terminal of which is connected a reference oscillator and to the other terminal of which is connected a feedback circuit. The feedback circuit incorporates the detecting coil and the amplified differential output signal between the AC signals applied to the differential amplifier and the signal supplied to the differential amplifier resulting from the impedance of the detecting coil corresponding to the distance between the detecting coil and the metallic body are thus a measure of the distance. At least one of the parameters of open-loop gain of the differential amplifier and the amount of feedback in the feedback circuit is pre-determined so as to linearize at least for a pre-determined measuring range the output characteristics of the differential amplifier resulting from the variation of the detecting coil impedance caused by the variation of the distance.
    • 用于非接触式测量检测线圈与安装在相对关系中的金属体之间的距离的装置,包括差分放大器,其一端连接基准振荡器,另一端连接反馈电路。 反馈电路将检测线圈和施加到差分放大器的AC信号之间的放大的差分输出信号和由检测线圈的阻抗相对应地提供给差分放大器的信号对应于检测线圈和金属体之间的距离 因此是距离的度量。 预先确定差分放大器的开环增益的参数和反馈电路中的反馈量中的至少一个,以便至少对于预定的测量范围线性化,由差分放大器产生的输出特性 由距离的变化引起的检测线圈阻抗的变化。
    • 39. 发明授权
    • Film thickness measuring device and film thickness measuring method
    • 膜厚测量装置和膜厚测量方法
    • US08339617B2
    • 2012-12-25
    • US12904494
    • 2010-10-14
    • Takeo YamadaTakeshi YamamotoTakahiro YamakuraShinji HayashiShingo Kawai
    • Takeo YamadaTakeshi YamamotoTakahiro YamakuraShinji HayashiShingo Kawai
    • G01B11/28G01N21/25
    • G01N21/55G01B11/0625
    • A film thickness measuring device is provided with a light source, a spectroscopic sensor, a processor, and a storage unit, and configured in such a manner that light from the light source vertically enters a plane to be measured provided with a film and the light reflected by the plane to be measured enters the spectroscopic sensor. The storage unit stores theoretical values of reflectivity distributions of respective film thicknesses and theoretical values of color characteristic variables of the respective film thicknesses. The processor finds the thickness of the film of the plane to be measured from the reflectivity distribution measured by the spectroscopic sensor by using the theoretical values of the reflectivity distributions of the respective film thicknesses or the theoretical values of the color characteristic variables of the respective film thicknesses stored in the storage unit.
    • 膜厚测量装置设置有光源,光谱传感器,处理器和存储单元,并且被配置为使得来自光源的光垂直进入设置有被膜的待测平面,并且光 由待测平面反射的光进入光谱传感器。 存储单元存储各个膜厚度的各个膜厚度的反射率分布和各个膜厚度的色彩特性变量的理论值的理论值。 处理器通过使用各个膜厚度的反射率分布的理论值或各个膜的颜色特性变量的理论值,从由光谱传感器测量的反射率分布来求出要测量的平面的膜的厚度 存储在存储单元中的厚度。