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31. 发明授权

US06441414B1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same 失效
标题翻译：铁电场效应晶体管，利用其的存储器及其操作方法
公开(公告)号：US06441414B1
公开(公告)日：2002-08-27
申请号：US09170590
申请日：1998-10-13
申请人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223 , H01L21/28291 , H01L29/78391
摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. The fact that the drain to source current, lds, is always negative if a substrate to drain bias, Vss, of 0.8 volts or more is applied, permits the creation of a read and write truth table. A gate voltage equal to one truth table logic value is applied via a column decoder and a substrate bias equal to another truth table logic value is applied via a row decoder to write to the memory a resultant lds logic state, which can be read whenever a voltage is placed across the source and drain.
摘要翻译：一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。如果施加0.8伏或更高的衬底到漏极偏压Vss，则漏源到源电流lds总是为负，这允许创建读写真值表。通过列解码器施加等于一个真值表逻辑值的栅极电压，并且经由行解码器施加等于另一个真值表逻辑值的衬底偏置，以向存储器写入结果lds逻辑状态，其可以在每当电压跨过源极和漏极放置。

32. 发明授权

US06225156B1 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 失效
标题翻译：对氢曝露具有低灵敏度的铁电集成电路及其制造方法
公开(公告)号：US06225156B1
公开(公告)日：2001-05-01
申请号：US09062264
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/75
摘要： A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.
摘要翻译：在集成电路中的铁电薄膜的上方形成氢阻挡层。氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。铁电薄膜优选包含层状超晶格化合物。添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

33. 发明授权

US06198225B1 Ferroelectric flat panel displays 失效
标题翻译：铁电平板显示屏
公开(公告)号：US06198225B1
公开(公告)日：2001-03-06
申请号：US09326838
申请日：1999-06-07
申请人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： G09G310
CPC分类号： G09G3/367 , G09G3/22 , H01J1/30 , H01J2201/306 , H01J2329/00
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.
摘要翻译：平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。铁电薄膜中的功能梯度增强了电子发射。可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。荧光体可以夹在电介质和铁电体之间以增强发射。

34. 发明授权

US6165802A Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation 失效
标题翻译：使用氧气制造铁电集成电路来抑制和修复氢气降解的方法
公开(公告)号：US6165802A
公开(公告)日：2000-12-26
申请号：US62258
申请日：1998-04-17
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L21/8247 , H01L21/30 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/00
CPC分类号： H01L27/11502 , H01L21/3003 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55
摘要： An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300.degree. to 1000.degree. C. for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the metal oxide element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.
摘要翻译：形成集成电路，其包含含有至少两种金属的金属氧化物材料的铁电体元件。在环境氧气中，在300〜1000℃的温度范围内进行氧回收退火20分钟〜2小时。氧回收退火反转氢降解的作用并恢复铁电性能。随着退火温度和退火时间的增加，氧气回收退火更有效。优选地，金属氧化物元件包括层状超晶格化合物。当层状超晶格化合物包含铌酸铋铋并且前体中的铌/钽摩尔比为约0.4时，铁电性能的氢降解最小化。当层状超晶格化合物的超晶格发生元件和B位元素中的至少一个存在超过由化合物的平衡化学计量式表示的量时，进一步降低氢降解。

35. 发明授权

US5883828A Low imprint ferroelectric material for long retention memory and method of making the same 失效
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US5883828A
公开(公告)日：1999-03-16
申请号：US19849
申请日：1998-02-06
申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
摘要翻译：用于诸如FERAMS等的集成记忆电路中的薄膜铁电材料包含具有经验式SrBi2 + E（NbXTa2-X）O9 + 3E / 2的钽酸钽铋铌酸盐，其中E是表示过量的数的铋范围从零到2; X表示0.01〜0.9的过量的铌。当用单向电压脉冲进行挑战时，薄膜表现出极好的耐极化压印特性。

36. 发明授权

US5784310A Low imprint ferroelectric material for long retention memory and method of making the same 失效
公开(公告)号：US5784310A
公开(公告)日：1998-07-21
申请号：US810190
申请日：1997-03-03
申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： C01G35/00 , G11C11/56 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/5657 , H01L21/31691 , H01L28/40 , Y10S428/901
摘要： Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.

37. 发明授权

US06376691B1 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06376691B1
公开(公告)日：2002-04-23
申请号：US09388044
申请日：1999-09-01
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

38. 发明授权

US06281534B1 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06281534B1
公开(公告)日：2001-08-28
申请号：US09170417
申请日：1998-10-13
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

39. 发明授权

US5888585A Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide 失效
标题翻译：制造具有高介电常数钡 - 锶 - 铌氧化物的集成电路的工艺
公开(公告)号：US5888585A
公开(公告)日：1999-03-30
申请号：US767477
申请日：1996-12-16
申请人： Joseph D. Cuchiaro , Vikram Joshi , Claudia P. DaCruz , John M. McNelis , Carlos A. Paz de Araujo
发明人： Joseph D. Cuchiaro , Vikram Joshi , Claudia P. DaCruz , John M. McNelis , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , B05D9/12
CPC分类号： H01L28/55 , H01L21/31691
摘要： A charge storage device, such as an integrated circuit memory, including a dielectric comprising a barium-strontium-niobium oxide. A liquid precursor including the metals barium, strontium, and niobium is prepared and applied to a platinum electrode. The precursor is baked and annealed to form a dielectric having the formula Ba.sub.x Sr.sub.y Nb.sub.z O.sub.30, where x=1.3 to 3.5, y=1.5 to 3.7, and z =10. A top platinum electrode is then formed to provide a memory cell capacitor. Optimum results to date have been obtained with Ba.sub.2 Sr.sub.3 Nb.sub.10 O.sub.30, which yields a memory cell dielectric with dielectric constant over 1000 and a leakage current of less than 10.sup.-5 amperes per square centimeter for voltages up to 5 volts.
摘要翻译：一种电荷存储装置，例如集成电路存储器，包括包含钡 - 锶 - 氧化铌的电介质。制备包含金属钡，锶和铌的液体前体并将其施加到铂电极上。将前体烘烤和退火以形成具有式BaxSryNbzO30的电介质，其中x = 1.3至3.5，y = 1.5至3.7，z = 10。然后形成顶部铂电极以提供存储单元电容器。 Ba2Sr3Nb10O30已经获得了迄今为止最佳的结果，其产生介电常数超过1000的存储单元电介质，对于高达5伏的电压，漏电流小于10-5安培/平方厘米。

40. 发明授权

US5811847A PSZT for integrated circuit applications 失效
标题翻译： PSZT用于集成电路应用
公开(公告)号：US5811847A
公开(公告)日：1998-09-22
申请号：US672421
申请日：1996-06-28
申请人： Vikram Joshi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Vikram Joshi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L21/02 , H01L27/115 , H01L27/108
CPC分类号： H01L27/11502 , H01L28/55
摘要： An integrated circuit memory, MMIC, or other device including a dielectric comprising lead-tin zirconium-titanium oxide (PSZT). The proportion of tin ranges from 30% to 50% of the total amount of tin, zirconium and titanium. The dielectric is formed by applying a first liquid precursor having 10% excess lead to a substrate and heating it to form a first PSZT thin film, applying a second liquid precursor having 5% excess lead to the first thin film and heating to form a second thin film, then applying the first liquid precursor and heating to form a third thin film, and annealing the three thin films together to form a PSZT dielectric layer.
摘要翻译：集成电路存储器，MMIC或包括包含铅 - 锡锆 - 氧化钛（PSZT）的电介质的其它器件。锡的比例范围为锡，锆和钛的总量的30％至50％。通过将具有10％过量的铅的第一液体前体施加到基底上并加热以形成第一PSZT薄膜，将具有5％多余铅的第二液体前体施加到第一薄膜上并加热形成第二个薄膜，然后施加第一液体前体并加热以形成第三薄膜，并将三个薄膜退火在一起以形成PSZT介电层。

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