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31. 发明授权

US08466930B2 Color adjustment circuit 有权
标题翻译：颜色调整电路
公开(公告)号：US08466930B2
公开(公告)日：2013-06-18
申请号：US12681482
申请日：2008-10-02
申请人： Koji Otsuka , Daisuke Koyama , Osamu Mamba
发明人： Koji Otsuka , Daisuke Koyama , Osamu Mamba
IPC分类号： H04N9/64 , H04N1/60 , G09G5/02 , G09G5/00 , G03F3/08 , G06K9/00 , G06K9/40 , G06K9/54
CPC分类号： H04N9/643 , G09G5/026 , G09G2320/0242 , G09G2320/0666 , G09G2340/06 , H04N1/6005 , H04N1/6058 , H04N9/68
摘要： The fact that B and R are close to a U axis and to a V axis, respectively, is noted. On that basis, from an example of color adjustment parameters set in directions of colors, it is found out that, when inputted V is in a negative range, B has a small influence. Accordingly, a B component is omitted from calculation in order to reduce a calculation amount. Similarly, components having small influences are omitted when B is in a positive range, when U is in the positive range, and when U is in the negative range. Thereby, adjustment parameters AR, AG, and AB set in directions shown in the drawing can be defined. When inputted V is in the positive range, a V component can be adjusted by multiplying AR by the inputted V. Similar processing is performed when inputted V is in the negative range, when U is in the positive range, and when U is the negative range, respectively. With this taken into consideration by setting values of the adjustment parameters for respective RGB larger than 1 or smaller than 1, color transformation processing for adjusting darkness/lightness of colors can be performed, independently of brightness, so as to bring values of U and V close toward a color component to be increase in intensity. This allows reduction in load of color transformation processing.
摘要翻译：注意到B和R分别靠近U轴和V轴的事实。在此基础上，从颜色方向设定的颜色调整参数的例子可知，当输入V为负的范围时，B的影响小。因此，为了减少运算量，省略了B成分的计算。类似地，当B在正的范围内时，当U在正的范围内时，当U在负的范围时，省略了影响较小的部件。因此，可以定义在图中所示的方向设定的调整参数AR，AG和AB。当输入V为正的范围时，可以通过将AR乘以输入的V来调节V分量。当输入的V在负的范围内时，当U在正的范围内时，执行类似的处理，当U为负范围。通过设定大于1或小于1的各个RGB的调整参数的值来考虑，可以独立于亮度来执行用于调整颜色的暗度/亮度的颜色变换处理，以便使U和V的值靠近颜色分量增加强度。这允许减少颜色变换处理的负载。

32. 发明授权

US08351734B2 Video signal processing device and video display device 失效
标题翻译：视频信号处理装置和视频显示装置
公开(公告)号：US08351734B2
公开(公告)日：2013-01-08
申请号：US13054003
申请日：2009-07-09
申请人： Koji Otsuka , Osamu Manba , Yasufumi Hagiwara , Daisuke Koyama
发明人： Koji Otsuka , Osamu Manba , Yasufumi Hagiwara , Daisuke Koyama
IPC分类号： G06K9/40
CPC分类号： H04N5/208 , G06T5/002 , G06T5/003 , G06T5/20 , G06T2207/10016 , G06T2207/10024 , G06T2207/20192 , H04N1/4092 , H04N5/142
摘要： In an X-Y conversion chart, a threshold Th is defined as Y=0, that is, defined on the X axis, a range from −Th to +Th is defined as a range in which smoothing processing is performed, and a range outside −Th to +Th is defined as a range in which sharpening processing is performed. Among equations denoted by Y1 and Y2 expressed by two linear straight lines, intersections of both the equations Y1 and Y2 are set to the maximum value and the minimum value of an X-Y conversion equation in this case. The threshold is expressed by an intersection of Y2 and the X axis. This algorithm is formed by three factors of: a coefficient α indicating the strength of smoothing; a coefficient β indicating the strength of sharpening; and a threshold Th on the X axis for determining switching between the smoothing processing and the sharpening processing.
摘要翻译：在XY转换图中，阈值Th被定义为Y = 0，即在X轴上定义，从-Th到+ Th的范围被定义为进行平滑处理的范围， Th至+ Th被定义为执行锐化处理的范围。在由两条线性直线表示的Y1和Y2表示的方程中，将这两个方程Y1和Y2的交点设定为这种情况下的最大值和X-Y转换方程的最小值。阈值由Y2和X轴的交点表示。该算法由以下三个因素形成：系数α表示平滑强度; 系数bgr 表明锐化的强度; 以及用于确定平滑处理和锐化处理之间的切换的X轴上的阈值Th。

33. 发明申请

US20130004062A1 COLOR JUDGING APPARATUS, COLOR JUDGING METHOD, IMAGE PROCESSING CIRCUIT AND PROGRAM 有权
标题翻译：颜色判断设备，颜色判断方法，图像处理电路和程序
公开(公告)号：US20130004062A1
公开(公告)日：2013-01-03
申请号：US13634560
申请日：2011-05-20
申请人： Koji Otsuka , Osamu Manba
发明人： Koji Otsuka , Osamu Manba
IPC分类号： G06T7/00
CPC分类号： H04N1/6027 , H04N1/6005 , H04N9/73
摘要： With a pixel included in image data as a reference pixel, a pixel that shares the same pixel value as the reference pixel or a pixel similar to the reference pixel is judged as a shared pixel, and for the pixel judged as the shared pixel, color of the reference pixel is regarded as a color judgment result of the shared pixel, thus making it possible to reduce color calculation processing for the shared pixel. This makes it possible to provide a color judging apparatus operating at higher speed and the like. Thereby, it is possible to provide the color judging apparatus operable at high speed and the like by reducing the number of times of the color calculation processing executed for an input image.
摘要翻译：使用包含在图像数据中作为参考像素的像素，将与参考像素相同的像素值的像素或与参考像素类似的像素判断为共享像素，并且对于被判断为共享像素的像素，颜色被认为是共享像素的颜色判断结果，从而可以减少共享像素的颜色计算处理。这使得可以提供以更高速度等操作的颜色判断装置。由此，可以通过减少为输入图像执行的颜色计算处理的次数来提供可高速操作的颜色判断装置。

34. 发明授权

US08089078B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US08089078B2
公开(公告)日：2012-01-03
申请号：US12412902
申请日：2009-03-27
申请人： Hitoshi Murofushi , Koji Otsuka , Nobuhisa Sugimori , Hideyuki Watanabe
发明人： Hitoshi Murofushi , Koji Otsuka , Nobuhisa Sugimori , Hideyuki Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/05 , H01L27/156 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12032 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H05B33/089 , H01L2924/00
摘要： A light emitting device includes: a first semiconductor region; a second semiconductor region and third semiconductor region which are provided in the first semiconductor region; a first semiconductor light emitting element of which first electrode is electrically connected to a main surface of the second semiconductor region; a second semiconductor light emitting element of which third electrode is electrically connected to a main surface of the third semiconductor region; and a conductor which electrically connects the second electrode of the first semiconductor light emitting element and the third semiconductor region, and which electrically connects the second electrode and the third electrode through the third semiconductor region. In the light emitting device, the semiconductor light emitting elements are connected in series, and are directly connected to a power source.
摘要翻译：发光器件包括：第一半导体区域; 设置在所述第一半导体区域中的第二半导体区域和第三半导体区域; 第一半导体发光元件，其第一电极电连接到第二半导体区域的主表面; 第二半导体发光元件，其第三电极与第三半导体区域的主表面电连接; 以及将第一半导体发光元件的第二电极和第三半导体区域电连接并且通过第三半导体区域电连接第二电极和第三电极的导体。在发光装置中，半导体发光元件串联连接，并直接与电源连接。

35. 发明申请

US20100224207A1 Eyelash Curler 审中-公开
标题翻译：睫毛夹
公开(公告)号：US20100224207A1
公开(公告)日：2010-09-09
申请号：US12086388
申请日：2008-03-14
申请人： Koji Otsuka , Koji Shirakawa
发明人： Koji Otsuka , Koji Shirakawa
IPC分类号： A45D2/48
CPC分类号： A45D2/48
摘要： [Subject] To provide an eyelash curler capable of curling the entire eyelashes easily and beautifully in an ideally radial state by using the eyelash curler once.[Solving Means] An eyelash curler according to the present invention is provided with a pair of supporting columns 10, a movable member 14 in a curved shape capable of moving in the up and down direction along supporting column upper parts 10a in a linear shape of a pair of the supporting columns, an elastic body 16 attached to the movable member, a fixing member 12 in a curved shape fixed to the upper parts 10a of a pair of the supporting column and handles 18 and 22 for moving the movable member 14 in the up and down direction, a curvature radius R3 of a lower edge 12a of the fixing member 12 (excluding the vicinities of both ends) in a front view is set to 16.5 to 22.5 mm, and a curvature radius R1 of the lower edge 12a of the fixing member 12 (excluding the vicinities of the both ends) in a plan view is set to 18.5 to 24.5 mm.
摘要翻译： [主题]提供一种能够通过使用睫毛夹卷发器，在理想的径向状态下容易且美观地卷曲整个睫毛的睫毛夹。具体实施方式根据本发明的睫毛夹具设置有一对支柱10，能够沿着支撑柱上部10a沿上下方向沿着上下方向移动的可动构件14，其形状为直线状一对支撑柱，附接到可动构件的弹性体16，固定在一对支柱的上部10a上的弯曲形状的固定构件12和用于使可动构件14移动的手柄18和22 前后方向上的固定构件12的下边缘12a的曲率半径R3（不包括两端附近）设定为16.5〜22.5mm，下边缘12a的曲率半径R1 （不包括两端附近）在平面图中设定为18.5〜24.5mm。

36. 发明授权

US07675070B2 LED having a reflector layer of improved contact ohmicity 有权
标题翻译： LED具有改善的接触欧姆度的反射层
公开(公告)号：US07675070B2
公开(公告)日：2010-03-09
申请号：US11619079
申请日：2007-01-02
申请人： Hidekazu Aoyagi , Koji Otsuka
发明人： Hidekazu Aoyagi , Koji Otsuka
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.
摘要翻译： LED具有通过导电反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的活性层，用于产生光。为了与发光半导体区域良好的欧姆接触，与非合金银相比，反射率没有任何明显的降低，反射层由含有主要比例的银和至少一种铜，金的银基合金制成，钯，钕，硅，铱，镍，钨，锌，镓，钛，镁，钇，铟和锡。

37. 发明申请

US20090233192A1 METHOD FOR FINISHING SURFACE OF PRELIMINARY POLISHED GLASS SUBSTRATE 有权
公开(公告)号：US20090233192A1
公开(公告)日：2009-09-17
申请号：US12475878
申请日：2009-06-01
申请人： Koji Otsuka , Kenji Okamura
发明人： Koji Otsuka , Kenji Okamura
IPC分类号： G03F1/00 , C23C14/00
CPC分类号： G01B9/02065 , C03C15/02 , C03C19/00 , C03C23/006 , C03C2204/08 , G01B9/02057 , G01B9/0209 , G01B11/30 , G03F1/60 , H01J2237/0812 , Y10T428/24355
摘要： The invention is to provide a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate so as to have a surface excellent in flatness. The invention relates to a method for finishing a pre-polished glass substrate surface using any one of processing methods selected from the group consisting of ion beam etching, gas cluster ion beam etching and plasma etching, the glass substrate being made of quartz glass that contains a dopant and comprises SiO2 as a main component, and the method for finishing a pre-polished glass substrate surface including: a step of measuring flatness of the glass substrate surface using a shape measurement unit that comprises: a low-coherent light source whose outgoing light flux has a coherence length shorter than twice an optical distance between front and back surfaces of the glass substrate; a path match route part that divides the outgoing light flux from the low-coherent light source into two light fluxes, causes one of the two light fluxes to make a detour by a given optical path length relative to the other light flux, and then recombines the light fluxes into a single light flux and outputs it; and an interference optical system that acquires an interference fringe which carries wave surface information of the glass substrate surface by radiating an outgoing light flux from the low-coherent light source onto a reference surface and the glass substrate surface held on a measurement optical axis and making lights returning from the reference surface and the glass substrate surface interfere with each other; and a step of measuring a concentration distribution of the dopant contained in the glass substrate, wherein processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness of the glass substrate and the step of measuring a concentration distribution of the dopant contained in the glass substrate, and the finishing is carried out while keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate surface at from 30 to 89°.

38. 发明授权

US07518154B2 Nitride semiconductor substrate and semiconductor element built thereon 有权
标题翻译：氮化物半导体衬底和其上形成的半导体元件
公开(公告)号：US07518154B2
公开(公告)日：2009-04-14
申请号：US10988889
申请日：2004-11-15
申请人： Koji Otsuka , Masataka Yanagihara , Nobuo Kaneko
发明人： Koji Otsuka , Masataka Yanagihara , Nobuo Kaneko
IPC分类号： H01L29/207
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/66462 , H01L29/812
摘要： A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion coefficient therebetween. Electrodes are formed on the nitride semiconductor layer or layers in order to provide HEMTs or MESFETs. The buffer region is a lamination of a multiplicity of buffer layers each comprising a first, a second, and a third buffer sublayer of nitride semiconductors, in that order from the silicon substrate proper toward the nitride semiconductor region. The three sublayers of each buffer layer contain aluminum in varying proportions including zero. The aluminum proportion of the third buffer sublayer is either zero or intermediate that of the first buffer sublayer and that of the second. The low aluminum proportion of the third buffer sublayer serves to prevent two-dimensional electron gas from generating in the buffer region and hence to make this region sufficiently high in resistance to inhibit current leakage from the HEMTs or MESFETs.
摘要翻译：这种衬底系统具有介于硅衬底本体和氮化物半导体区域之间的缓冲区域，以补偿它们之间的线膨胀系数差。为了提供HEMT或MESFET，在氮化物半导体层上形成电极。缓冲区域是从硅衬底本身朝向氮化物半导体区域的顺序，分别包括氮化物半导体的第一，第二和第三缓冲子层的多个缓冲层的叠层。每个缓冲层的三个子层含有不同比例的铝，包括零。第三缓冲器子层的铝比例为零或与第一缓冲子层的第二缓冲层的铝比例为中等。第三缓冲层的低铝比例用于防止在缓冲区域中产生二维电子气，从而使该区域具有足够高的电阻，以防止来自HEMT或MESFET的电流泄漏。

39. 发明授权

US07456435B2 Light-emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US07456435B2
公开(公告)日：2008-11-25
申请号：US10994922
申请日：2004-11-22
申请人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
发明人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/007 , H01L33/04
摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.
摘要翻译：具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩散层。电流扩展层是交替需要次数布置的第一和第二子层的叠层。由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。

40. 发明申请

US20070051938A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070051938A1
公开(公告)日：2007-03-08
申请号：US10573458
申请日：2005-08-25
申请人： Koji Otsuka , Shinichi Iwakami
发明人： Koji Otsuka , Shinichi Iwakami
IPC分类号： H01L31/00
CPC分类号： H01L29/872
摘要： A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.
摘要翻译：在作为半导体层和半导体层之间的异质界面的界面附近产生二维载体。两个凹部形成为从主面向界面延伸。在凹部的底表面和侧面上形成由金属制成并与半导体层形成肖特基结的电极。在凹部的底表面和侧表面上形成由金属制成并与半导体层具有低电阻接触并且与其低电阻接触的电极。结果，提供了半导体器件，其中电极和半导体层之间的接触电阻降低，并且提高了高频特性。

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