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31. 发明申请

US20070128856A1 PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES 有权
公开(公告)号：US20070128856A1
公开(公告)日：2007-06-07
申请号：US11670296
申请日：2007-02-01
申请人： Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
发明人： Luan Tran , William Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer Abatchev , Gurtej Sandhu , D. Durcan
IPC分类号： H01L21/4763
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

32. 发明授权

US07132201B2 Transparent amorphous carbon structure in semiconductor devices 有权
公开(公告)号：US07132201B2
公开(公告)日：2006-11-07
申请号：US10661379
申请日：2003-09-12
申请人： Zhiping Yin , Weimin Li
发明人： Zhiping Yin , Weimin Li
IPC分类号： G01F9/00 , G03C5/00
CPC分类号： H01L21/02115 , H01L21/0214 , H01L21/022 , H01L21/02274 , H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/02527 , H01L21/0262 , H01L21/0332 , H01L21/3081 , H01L21/3146 , H01L27/10852
摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

33. 发明授权

US07067415B2 Low k interlevel dielectric layer fabrication methods 失效
公开(公告)号：US07067415B2
公开(公告)日：2006-06-27
申请号：US10205930
申请日：2002-07-25
申请人： Weimin Li , Zhiping Yin , William Budge
发明人： Weimin Li , Zhiping Yin , William Budge
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/477
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/31633 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is formed over the substrate. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen effective to reduce the dielectric constant to below what it was prior to said exposing. A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. In a chamber, an interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is plasma enhanced chemical vapor deposited over the substrate at subatmospheric pressure. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen at a subatmospheric pressure effective to reduce the dielectric constant by at least 10% below what it was prior to said exposing. The exposing occurs without removing the substrate from the chamber between the depositing and the exposing, and pressure within the chamber is maintained at subatmospheric between the depositing and the exposing.

34. 发明申请

US20060110920A1 Low temperature nitride used as cu barrier layer 有权
公开(公告)号：US20060110920A1
公开(公告)日：2006-05-25
申请号：US11328865
申请日：2006-01-09
申请人： Zhiping Yin , Eden Zielinski , Fred Fishburn
发明人： Zhiping Yin , Eden Zielinski , Fred Fishburn
IPC分类号： H01L21/44 , H01L21/471
CPC分类号： H01L23/53238 , C23C16/345 , H01L21/3185 , H01L21/76834 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of depositing a non-conductive barrier layer onto a metal surface wherein the resistance of the metal remains substantially unchanged before and after the non-conductive barrier layer deposition. The deposition process provides a low temperature processing environment so as to inhibit the formation of impurities such as silicide in the metal, wherein the silicide can adversely increase the resistance of the underlying metal.

35. 发明申请

US20060006502A1 Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device 失效
公开(公告)号：US20060006502A1
公开(公告)日：2006-01-12
申请号：US11214367
申请日：2005-08-29
申请人： Zhiping Yin , Gurtej Sandhu
发明人： Zhiping Yin , Gurtej Sandhu
IPC分类号： H01L23/544
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/28088 , H01L21/28123 , H01L21/31133 , H01L21/31144 , H01L21/312 , H01L21/32139 , H01L21/76802 , H01L27/10817 , H01L27/10852 , H01L28/84 , H01L28/90
摘要： A hard mask comprising boron-doped amorphous carbon, and a method for forming the hard mask, provides improved resistance to etches of a variety of materials compared with previous amorphous carbon hard mask layers.

36. 发明申请

US20050158910A1 Protective layer for use in packaging a semiconductor die and method for forming same 审中-公开
标题翻译：用于封装半导体管芯的保护层及其形成方法
公开(公告)号：US20050158910A1
公开(公告)日：2005-07-21
申请号：US11080697
申请日：2005-03-15
申请人： Tongbi Jiang , Zhiping Yin , Mike Connell
发明人： Tongbi Jiang , Zhiping Yin , Mike Connell
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31 , H01L21/44
CPC分类号： H01L23/291 , H01L21/565 , H01L23/3192 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device having a protective layer for use in packaging the semiconductor device. The apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
摘要翻译：本发明提供一种具有用于封装半导体器件的保护层的半导体器件。该装置包括电介质层，形成在电介质层之上的第一钝化层以及形成在第一钝化层之上的保护层，该保护层适于在包装时减少半导体器件中的应力缺陷故障。

37. 发明授权

US06828683B2 Semiconductor devices, and semiconductor processing methods 有权
标题翻译：半导体器件和半导体处理方法
公开(公告)号：US06828683B2
公开(公告)日：2004-12-07
申请号：US09219041
申请日：1998-12-23
申请人： Weimin Li , Zhiping Yin
发明人： Weimin Li , Zhiping Yin
IPC分类号： H01L2348
CPC分类号： H01L21/76834 , H01L21/3185 , H01L21/76801 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.
摘要翻译：一方面，本发明包括一种半导体处理方法，其中在半导体衬底上形成导电含铜材料，并且在导电材料附近形成第二材料。在导电材料和第二材料之间形成阻挡层。阻挡层包括具有与氮和有机材料化学键合的硅的化合物。在另一方面，本发明包括包含与氮和有机材料化学键合的硅的物质组合物。氮不与碳结合。另一方面，本发明包括半导体处理方法。提供半导体衬底并且在半导体衬底上形成层。该层包括具有与氮和有机材料化学键合的硅的化合物。

38. 发明授权

US06784094B2 Anti-reflective coatings and methods for forming and using same 失效
标题翻译：抗反射涂层及其形成和使用方法
公开(公告)号：US06784094B2
公开(公告)日：2004-08-31
申请号：US10744261
申请日：2003-12-22
申请人： Zhiping Yin , Gurtej Sandhn
发明人： Zhiping Yin , Gurtej Sandhn
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/0276 , H01L21/318 , H01L21/76802 , H01L21/76814
摘要： An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH4 and N2O, where the ratio of SiH4:N2O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.
摘要翻译：提供了具有相对高的蚀刻速率的抗反射涂层材料层，使得其可以在相对较短的时间段内清洁所定义的开口同时移除，而不影响开口的临界尺寸。形成这种层的方法包括提供衬底组合表面并使用至少含硅前体，含氮前体和含氧前体的气体混合物。该层在约50℃至约600℃的温度范围内形成。通常，沉积的抗反射涂层材料为SixOyNz：H，其中x在约0.39至约0.65的范围内， y在约0.02至约0.56的范围内，z在约0.05至约0.33的范围内，并且其中无机抗反射涂层材料层中的氢的原子百分比在约10原子％至约40原子％。总SiH 4流通常在约80sccm至约400sccm的范围内。气体混合物可以包括SiH 4和N 2 O，其中SiH 4 :N 2 O的比例在约0.25至0.60的范围内。无机抗反射涂层材料层可用于限定接触开口，用于形成电容器结构的开口或氧化物层中的任何其它开口。

39. 发明授权

US06670284B2 Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures 有权
标题翻译：净化处理室的方法，减少抗反射涂层缺陷的方法，以及所得的半导体结构
公开(公告)号：US06670284B2
公开(公告)日：2003-12-30
申请号：US10121645
申请日：2002-04-12
申请人： Zhiping Yin
发明人： Zhiping Yin
IPC分类号： H01L2131
CPC分类号： H01L23/5329 , H01L21/0276 , H01L21/3145 , H01L2924/0002 , Y10S438/905 , H01L2924/00
摘要： A method for fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the anti-reflective coating is to be deposited. The anti-reflective coating may include silicon, oxygen and nitrogen, and is preferably of the general formula SixOyNz, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over the anti-reflective coating has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.
摘要翻译：一种用于在半导体器件结构上制造基本光滑表面的抗反射涂层的方法，包括在其中要沉积抗反射涂层的处理室中产生来自惰性气体的等离子体。抗反射涂层可以包括硅，氧和氮，并且优选为通式SixOyNz，其中x等于0.40至0.65，y等于0.02至0.56，z等于0.05至0.33。优选地，x + y + z等于1。该方法还可以包括在抗反射涂层上制造氮化硅层。在抗反射涂层上包括氮化硅层的半导体器件具有小于约40,000个颗粒的密度或氮化硅中的表面粗糙度特征，每八英寸晶片约120-150纳米尺寸。因此，随后在氮化硅层上形成的掩模具有基本均匀的厚度并且基本上无变形。

40. 发明授权

US06518117B2 Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions 有权
公开(公告)号：US06518117B2
公开(公告)日：2003-02-11
申请号：US09823200
申请日：2001-03-29
申请人： Er-Xuan Ping , Zhiping Yin
发明人： Er-Xuan Ping , Zhiping Yin
IPC分类号： H01L218242
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/10808 , H01L27/10852 , H01L28/40 , H01L28/84 , H01L28/91 , H01L29/945
摘要： The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.

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