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31. 发明申请

US20090304908A1 Methods of fabricating plasticized, antiplasticized and crystalline conducting polymers and precursors thereof 有权
标题翻译：制造增塑的，抗增塑的和结晶的导电聚合物及其前体的方法
公开(公告)号：US20090304908A1
公开(公告)日：2009-12-10
申请号：US12583030
申请日：2009-08-12
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： B05D5/12 , H01B1/12
CPC分类号： H01B1/128
摘要： Methods of forming materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity. In the preferred embodiment, additives are added to a solution containing a solvent and the precursor or electrically conductive polymer. The additives are preferably plasticizer of diluents. As the solvent is removed the material dries and contains a higher degree of crystallinity than in the absence of the additive.
摘要翻译：描述了形成具有高结晶度的导电聚合物和导电聚合物前体的材料的方法。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现高结晶度。在导电材料中实现高水平的导电性而不使材料拉伸定向。与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。在优选的实施方案中，将添加剂加入到含有溶剂和前体或导电聚合物的溶液中。添加剂优选稀释剂的增塑剂。当除去溶剂时，与没有添加剂相比，材料干燥并含有更高的结晶度。

32. 发明申请

US20090032775A1 POLYCRYSTALLINE CONDUCTING POLYMERS AND PRECURSORS THEREOF HAVING ADJUSTABLE MORPHOLOGY AND PROPERTIES 审中-公开
标题翻译：具有可调节形态和性质的多晶硅导电聚合物及其前驱体
公开(公告)号：US20090032775A1
公开(公告)日：2009-02-05
申请号：US12137646
申请日：2008-06-12
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： H01B1/12 , C08K5/09 , C08K5/10 , C08K5/5317
CPC分类号： C08G61/12 , H01B1/128 , Y10T428/249958
摘要： Polycrystalline materials containing crystallies of precursors to electrically conductive polymers and electrically conductive polymers are described which have an adjustable high degree of crystallinity. The intersticial regions between the crystallites contains amorphous material containing precursors to electrically conductive polymers and/or electrically conductive polymers. The degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. This is preferable achieved by including additives, such as plasticizers and diluents, to the solution from which the polycrystalline material is formed. The morphology of the polycrystalline material is adjustable to modify the properties of the material such as the degree of crystallinity, crystal grain size, glass transition temperature, thermal coefficient of expansion and degree of electrical conductivity. High levels of electrical conductivity are achieved in in the electrically conductive polycrystalline materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity.
摘要翻译：描述了具有可调节高结晶度的导电聚合物和导电聚合物的前体结晶的多晶材料。微晶之间的区域包含含有导电聚合物和/或导电聚合物的前体的无定形材料。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现结晶度。优选通过将诸如增塑剂和稀释剂的添加剂添加到形成多晶材料的溶液中来实现。可以调节多晶材料的形态，以改变材料的性质，例如结晶度，晶粒尺寸，玻璃化转变温度，热膨胀系数和电导率。在导电多晶材料中实现高水平的导电性，而不拉伸定向该材料。与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。

33. 发明申请

US20080227030A1 Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates 有权
标题翻译：使用混合基材来增强铬或敏感基材上的图案化抗蚀剂型材
公开(公告)号：US20080227030A1
公开(公告)日：2008-09-18
申请号：US10597904
申请日：2004-02-11
申请人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
发明人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
IPC分类号： G03F7/004 , G03F7/34
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译：通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

34. 发明授权

US07361444B1 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 有权
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US07361444B1
公开(公告)日：2008-04-22
申请号：US09256034
申请日：1999-02-23
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/023
CPC分类号： G03F7/091 , Y10S430/145
摘要： Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.
摘要翻译：公开了包括双层和顶面成像的多层抗蚀剂结构，其利用用作ARC的调谐底层，平坦化层和耐蚀刻硬掩模，其特性如光学，化学和物理性质被定制以产生呈现高分辨率的多层抗蚀剂结构自由光刻及其制备方法。这些下层膜包括其加工条件被控制的基于酚醛清漆的抗蚀剂的组，诸如BARL材料的聚芳基砜，聚羟基苯乙烯基衍生物，作为与含有交联剂的蒽甲醇反应的聚羟基苯乙烯和聚羟基苯乙烯的共聚物的实例，以及酸催化剂（热酸生成剂），聚酰亚胺，聚醚，特别是聚亚芳基醚，聚芳基硫醚，聚碳酸酯如聚芳基碳酸酯，环氧化物，环氧丙烯酸酯，聚亚芳基如聚苯撑，聚亚芳基亚乙烯基如聚亚苯基亚乙烯基，聚乙烯基咔唑，环烯烃和聚酯。这种膜的折射率和消光系数在UV和DUV波长，特别是365,248,293和157nm以及EUV下可调节为约1.4至约2.1和约0.1至约0.6。此外，在本发明中制备的底层膜不与抗蚀剂界面混合和除气产物对抗蚀剂的污染相互作用。双层和TSI抗蚀剂结构可用于248,193,157，EUV，X射线，电子束和离子束技术。

35. 发明授权

US07314700B2 High sensitivity resist compositions for electron-based lithography 有权
标题翻译：用于电子光刻的高灵敏度抗蚀剂组合物
公开(公告)号：US07314700B2
公开(公告)日：2008-01-01
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
IPC分类号： G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

36. 发明授权

US07288218B2 Deaggregated electrically conductive polymers and precursors thereof 有权
标题翻译：解聚集的导电聚合物及其前体
公开(公告)号：US07288218B2
公开(公告)日：2007-10-30
申请号：US10819674
申请日：2004-04-07
申请人： Marie Angelopoulos , Bruce K. Furman
发明人： Marie Angelopoulos , Bruce K. Furman
IPC分类号： H01B1/12 , C08G73/00
CPC分类号： H01B1/124 , C08G2261/312 , H01B1/125 , H01B1/127 , H01B1/128 , Y10S524/91 , Y10T428/26
摘要： Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
摘要翻译：描述了聚集的取代和未取代的聚对苯二酚，聚对苯乙烯基乙烯基，聚苯胺，聚嗪，聚噻吩，聚对苯硫醚，聚呋喃，聚吡咯，聚硒吩，由可溶性前体及其组合形成的聚乙炔及其共聚物及其制备方法。随后掺杂时的解聚聚合物分子显示更高的导电性。诸如氯化锂，间甲酚和壬基苯酚的试剂用于解聚聚合物分子。解聚剂可以在掺杂分子之前或期间加入。

37. 发明授权

US07166241B1 Water-soluble electrically conducting polymers, their synthesis and use 失效
标题翻译：水溶性导电聚合物，其合成和用途
公开(公告)号：US07166241B1
公开(公告)日：2007-01-23
申请号：US08478469
申请日：1995-06-07
申请人： Marie Angelopoulos , Jeffrey Donald Gelorme , Thomas Harold Newman , Niranjan Mohanlal Patel , David Earle Seeger
发明人： Marie Angelopoulos , Jeffrey Donald Gelorme , Thomas Harold Newman , Niranjan Mohanlal Patel , David Earle Seeger
IPC分类号： H01B1/12
CPC分类号： H01B1/127 , H01B1/128 , Y10S428/922
摘要： Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.
摘要翻译：公开了一种包含多酸和含有含有一个或多个碱性原子的重复单元的聚合物的新物质组合物。该复合物是水溶性和导电性的。该复合物可用于提供用于电子应用和制造的有机放电层。

38. 发明申请

US20060238690A1 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts 审中-公开
标题翻译：导电聚合物的图案及其作为电极或电触头的应用
公开(公告)号：US20060238690A1
公开(公告)日：2006-10-26
申请号：US11472982
申请日：2006-06-22
申请人： Marie Angelopoulos , Christos Dimitrakopoulos , Bruce Furman , Teresita Graham , Shui-Chih Lien
发明人： Marie Angelopoulos , Christos Dimitrakopoulos , Bruce Furman , Teresita Graham , Shui-Chih Lien
IPC分类号： G02F1/1343
CPC分类号： H01L51/5203 , C08G61/12 , G02F1/13439 , H01B1/125 , H01B1/127 , H01B1/128 , H01J29/868 , H01L21/0332 , H01L21/31138 , H01L23/49894 , H01L23/60 , H01L29/456 , H01L29/458 , H01L29/4908 , H01L33/38 , H01L33/42 , H01L51/0018 , H01L51/0021 , H01L51/0023 , H01L51/0504 , H01L51/0508 , H01L51/0512 , H01L51/0545 , H01L51/102 , H01L51/5206 , H01L51/5234 , H01L2251/5323 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , Y10T428/10 , Y10T428/1055 , Y10T428/12528 , Y10T428/24331 , Y10T428/31504 , Y10T428/31533 , Y10T428/31678 , Y10T428/31692 , H01L2924/00
摘要： Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer, patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.
摘要翻译：描述了具有提供电连接的图案化导电聚合物的电子器件及其制造方法。描述了液晶显示单元，其中至少一个电极提供跨越由图案化的导电聚合物形成的液晶材料的偏压。描述了具有图案化导电聚合物作为源极漏极和栅电极的薄膜晶体管。描述了由图案化的导电聚合物形成的具有阳极和涂覆区域的发光二极管。使用抗蚀剂掩模的图案化方法; 使用图案化金属层进行图案化，使用抗蚀剂图案化金属层; 并且直接对导电聚合物进行图案化以形成电极，并描述阳极和阴极区域。

39. 发明申请

US20060035167A1 Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer 失效
公开(公告)号：US20060035167A1
公开(公告)日：2006-02-16
申请号：US10916755
申请日：2004-08-12
申请人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Lang , Wenjie Li , David Medeiros , Wayne Moreau , Karen Petrillo
发明人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Lang , Wenjie Li , David Medeiros , Wayne Moreau , Karen Petrillo
IPC分类号： G03F7/00
CPC分类号： C08F220/14 , C08F220/38 , G03F7/0045 , G03F7/095
摘要： A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

40. 发明授权

US06979518B2 Attenuated embedded phase shift photomask blanks 失效
标题翻译：嵌入式相移光掩模空白
公开(公告)号：US06979518B2
公开(公告)日：2005-12-27
申请号：US10727925
申请日：2003-12-04
申请人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
IPC分类号： G03F1/32 , C23C14/06 , C23C14/08 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.
摘要翻译：通过由金属，硅，氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。加入蚀刻停止层以改善相移层的蚀刻选择性。通过该方法获得宽范围的光学透射（0.001nm至15％，157nm）。

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