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31. 发明授权

US07106558B2 Biased spin valve head with canted adjacent layer and current channeling layer 失效
公开(公告)号：US07106558B2
公开(公告)日：2006-09-12
申请号：US10868713
申请日：2004-06-15
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

32. 发明申请

US20060132988A1 Novel hard bias design for sensor applications 有权
标题翻译：传感器应用的新型硬偏置设计
公开(公告)号：US20060132988A1
公开(公告)日：2006-06-22
申请号：US11016506
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成，或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H C，M L t和S的最大化的厚度价值观。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了读操作期间较低的不对称输出和NBLW废弃率。}

33. 发明授权

US07050273B2 Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon 失效
标题翻译：底部旋转阀传感器，其上制造有铅覆盖（LOL）结构
公开(公告)号：US07050273B2
公开(公告)日：2006-05-23
申请号：US10922540
申请日：2004-08-20
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

34. 发明授权

US07016165B2 Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication 失效
标题翻译：基极GMR读头具有改进的硬偏置层及其制造方法
公开(公告)号：US07016165B2
公开(公告)日：2006-03-21
申请号：US09822491
申请日：2001-04-02
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
摘要翻译：用于形成具有较薄的硬磁纵向偏置层的自旋阀型抵接接头GMR传感器元件的方法，其具有在接合区域中显着改善的磁性能和具有较薄硬磁纵向偏置层的自旋阀型邻接结GMR传感器元件在根据该方法制造的接合区域中具有显着改善的磁性能。

35. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

36. 发明授权

US06826015B2 Flux concentrating stitched write head 失效
标题翻译：助焊剂集中缝合写头
公开(公告)号：US06826015B2
公开(公告)日：2004-11-30
申请号：US10453048
申请日：2003-06-03
申请人： Mao-Min Chen , Pokang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Pokang Wang , Cherng-Chyi Han
IPC分类号： G11B531
CPC分类号： G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3163 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A flux concentrating stitched write head design for high data rate applications is provided. The flux concentration is achieved by means of a non-magnetic step embedded into a portion of the lower magnetic pole of the write head, just beneath the write gap layer. The design permits extremely short throat heights, which will be required by future high data rate applications.
摘要翻译：提供了一种用于高数据速率应用的通量集中缝合写头设计。磁通量集中通过嵌入写入头下部磁极的一部分的非磁性步骤来实现，正好位于写入间隙层的正下方。该设计允许极短的喉部高度，这将是未来高数据速率应用所需要的。

37. 发明授权

US06785954B2 Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor 失效
标题翻译：在底部自旋阀GMR读取传感器上制造引线覆盖层（LOL）的方法
公开(公告)号：US06785954B2
公开(公告)日：2004-09-07
申请号：US10124004
申请日：2002-04-17
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

38. 发明授权

US06775903B2 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer 失效
标题翻译：用于制造具有合成固定层的顶部磁阻传感器元件的方法
公开(公告)号：US06775903B2
公开(公告)日：2004-08-17
申请号：US09953546
申请日：2001-09-17
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

39. 发明授权

US06415500B1 Method to prevent electrostatic discharge for MR/GMR wafer fabrication 有权
标题翻译：防止MR / GMR晶片制造的静电放电的方法
公开(公告)号：US06415500B1
公开(公告)日：2002-07-09
申请号：US09482050
申请日：2000-01-13
申请人： Cherng-Chyi Han , Mao-Min Chen , Jen-Wei Koo , Rodney Lee , Li-Yan Zhu , Jei-Wei Chang
发明人： Cherng-Chyi Han , Mao-Min Chen , Jen-Wei Koo , Rodney Lee , Li-Yan Zhu , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3173 , G11B5/3903 , G11B5/40 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49156 , Y10T29/49165
摘要： Methods and structures are disclosed which avoid electrostatic charge build up and subsequent electrostatic discharge (ESD) during the wafer fabrication process of magnetoresistive (MR) or giant magnetoresistive (GMR) read/write heads of magnetic disk drives. This is achieved by designing the wafer layout and process so that the MR/GMR sensor film is shorted to the magnetic shields of the head through shorting paths so that there is an equal potential between MR/GMR sensor film and magnetic shields during the entire fabrication process.
摘要翻译：公开了在磁阻（MR）或巨磁阻（GMR）读/磁头磁盘驱动器的晶片制造过程中避免静电电荷累积和随后的静电放电（ESD）的方法和结构。这通过设计晶片布局和工艺来实现，使得MR / GMR传感器膜通过短路路径短路到磁头的磁屏蔽，使得在整个制造期间MR / GMR传感器膜和磁屏蔽之间具有相等的电位处理。

40. 发明授权

US06306311B1 Method to make a high data rate stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作高数据速率缝合笔记的方法
公开(公告)号：US06306311B1
公开(公告)日：2001-10-23
申请号：US09431237
申请日：1999-11-01
申请人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
发明人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3146 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032
摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.
摘要翻译：组合溅射和电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

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