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31. 发明专利

SG11201405769VA METHODS AND APPARATUS FOR SELECTIVELY MODULATING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM 未知
公开(公告)号：SG11201405769VA
公开(公告)日：2014-10-30
申请号：SG11201405769V
申请日：2013-03-13
申请人： LAM RES CORP
发明人： NAM SANG KI , DHINDSA RAJINDER , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065
摘要： Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber. There is included an RF power supply and a lower electrode configured to receive RF signal from the power supply. There is also included magnet ring disposed off-center relative to a center of the lower electrode, the magnet ring further disposed in one of a first position and a second position, the first position being below the lower electrode, the second position being around an outer periphery of the lower electrode.

32. 发明专利

SG10201405522RA INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 未知
公开(公告)号：SG10201405522RA
公开(公告)日：2014-10-30
申请号：SG10201405522R
申请日：2007-02-16
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , TAKESHITA KENJI , MARAKHTANOV ALEXEI , FISCHER ANDREAS
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

33. 发明专利

SG170030A1 INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 未知
公开(公告)号：SG170030A1
公开(公告)日：2011-04-29
申请号：SG2011013406
申请日：2007-02-16
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , TAKESHITA KENJI , MARAKHTANOV ALEXEI , FISCHER ANDREAS
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode. Figure 1A

34. 发明专利

SG10201602732TA PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION 未知
公开(公告)号：SG10201602732TA
公开(公告)日：2016-05-30
申请号：SG10201602732T
申请日：2012-08-17
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.

35. 发明专利

SG11201401989UA TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS 未知
公开(公告)号：SG11201401989UA
公开(公告)日：2014-09-26
申请号：SG11201401989U
申请日：2012-11-01
申请人： LAM RES CORP
发明人： DHINDSA RAHINDER , MARAKHTANOV ALEXEI , DELGADINO GERARDO , HUDSON ERIC , YEN BI MING , BAILEY ANDREW D III
IPC分类号： H01L21/306

36. 发明专利

SG178288A1 A MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT 未知
公开(公告)号：SG178288A1
公开(公告)日：2012-03-29
申请号：SG2012008314
申请日：2010-08-31
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
摘要： An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.

37. 发明专利

SG174501A1 MODULATED MULTI-FREQUENCY PROCESSING METHOD 未知
公开(公告)号：SG174501A1
公开(公告)日：2011-10-28
申请号：SG2011068269
申请日：2010-04-06
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

38. 发明专利

SG11202004504VA RING STRUCTURES AND SYSTEMS FOR USE IN A PLASMA CHAMBER 未知
公开(公告)号：SG11202004504VA
公开(公告)日：2020-07-29
申请号：SG11202004504V
申请日：2017-12-15
申请人： LAM RES CORP
发明人： KELLOGG MICHAEL , MACE ADAM , MARAKHTANOV ALEXEI , HOLLAND JOHN , CHEN ZHIGANG , KOZAKEVICH FELIX , MATYUSHKIN ALEXANDER
IPC分类号： H01J37/32 , C23C16/458 , C23C16/50
摘要： Systems and methods for securing an edge ring to a support ring are described. The edge ring is secured to the support ring via multiple fasteners that are inserted into a bottom surface of the edge ring. The securing of the edge ring to the support ring provides stability of the edge ring during processing of a substrate within a plasma chamber. In addition, the securing of the edge ring to the support ring secures the edge ring to the plasma chamber because the support ring is secured to an insulator ring, which is connected to an insulator wall of the plasma chamber. Moreover, the support ring and the edge ring are pulled down vertically using one or more clasp mechanisms during the processing of the substrate and are pushed up vertically using the clasp mechanisms to remove the edge ring and the support ring from the plasma chamber.

39. 发明专利

SG10201405042QA A MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT 未知
公开(公告)号：SG10201405042QA
公开(公告)日：2014-10-30
申请号：SG10201405042Q
申请日：2010-08-31
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI

40. 发明专利

SG11201402553UA DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES 未知
公开(公告)号：SG11201402553UA
公开(公告)日：2014-09-26
申请号：SG11201402553U
申请日：2012-11-16
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , BISE RYAN , LI LUMIN , NAM SANG KI , ROGERS JIM , HUDSON ERIC , DELGADINO GERARDO , BAILEY III ANDREW D , KELLOGG MIKE , DE LA LLERA ANTHONY
IPC分类号： C23F1/08

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