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31. 发明专利

JP2009180408A Protective member and protecting device using the same 审中-公开
标题翻译：保护构件和使用该保护构件的保护装置
公开(公告)号：JP2009180408A
公开(公告)日：2009-08-13
申请号：JP2008018670
申请日：2008-01-30
申请人： Kyocera Corp , 京セラ株式会社
发明人： ODA TAKEHIRO , KAYAMA TEPPEI , NAKANISHI MASAHITO
IPC分类号： F41H5/04 , B32B18/00 , C04B35/563 , C04B35/565 , C04B35/584 , F41H1/02 , F41H1/04
摘要： PROBLEM TO BE SOLVED: To provide a protective member having sufficient protecting performance to a fly object of high penetrating performance such as a bullet, a shell and the like. SOLUTION: In this protective member 1, an impact shock receiving portion 2 is composed of ceramics, and a base portion positioned at a back side of the impact shock receiving portion 2 is composed of a material having coefficient of thermal expansion lower than that of the impact shock receiving portion 2. Thus, such a state that the compressing force is applied to the base portion 3 is kept, and the performance for blocking the penetration of fitted bullet or shell can be improved. Further, as the progress of cracking generated on the impact shock receiving face 2a is stopped at a boundary with the base portion 3, the properties of both materials can be sufficiently exerted, and the protecting performance can be improved by synergistic effect. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有足够保护性能的保护构件，用于具有高穿透性能的飞物，例如子弹，外壳等。解决方案：在该保护构件1中，冲击接收部2由陶瓷构成，位于冲击冲击接收部2的后侧的基部由热膨胀系数低于因此，保持了对基部3施加压缩力的状态，能够提高阻止嵌合子弹或壳体的穿透性能。此外，随着冲击接收面2a产生的裂纹的进展在与基部3的边界处停止，可以充分发挥两种材料的性质，并且通过协同效应可以提高保护性能。版权所有（C）2009，JPO＆INPIT

32. 发明专利

JP2008275208A Protective member and protective device using the same 有权
标题翻译：保护构件和使用该保护构件的保护装置
公开(公告)号：JP2008275208A
公开(公告)日：2008-11-13
申请号：JP2007116905
申请日：2007-04-26
申请人： Kyocera Corp , 京セラ株式会社
发明人： ODA TAKEHIRO
IPC分类号： F41H5/04 , A41D13/00 , B32B7/02 , B32B9/00
摘要： PROBLEM TO BE SOLVED: To solve a problem that a protective member having sufficient protecting performance to a fly object of high penetrating performance, has not been provided though the penetrating performance of fly objects such as a bullet, a shell and the like is remarkably improved. SOLUTION: In this protective member, an impact shock receiving portion including an impact shock receiving face is composed of ceramics mainly composed of carbide, and a base portion positioned at a back side of the impact shock receiving portion is composed of a material having fracture toughness higher than that of the impact shock receiving portion. As mechanical properties such as hardness, rigidity, compressive strength and the like of the material of the impact shock receiving face side can be improved, the fitted bullet or shell is deformed at its tip or chopped into small pieces, and kinetic energy of the bullet or shell deformed or chopped into small pieces can be absorbed or scattered by the material of the back side. Further as the progress of cracking generated on the material at the impact shock receiving face side is stopped at a boundary with the material of the base portion side, the properties of both materials can be sufficiently exerted, and the protecting performance can be improved by synergistic effect. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了解决对于具有高穿透性的飞行物体具有足够的保护性能的保护构件的问题，虽然没有提供诸如子弹，壳等的飞行物体的穿透性能显着改善。解决方案：在该保护构件中，包括冲击接收面的冲击接收部由主要由碳化物构成的陶瓷构成，并且位于冲击冲击承受部的后侧的基部由材料断裂韧性高于冲击冲击接收部分的断裂韧性。由于能够提高冲击接收面侧的材料的硬度，刚性，抗压强度等的机械性能，所以可以使配合的子弹或壳体在其尖端变形或切成小片，并且子弹的动能或变形或切成小块的外壳可被背面的材料吸收或散开。此外，随着在冲击接收面侧的材料产生的裂纹的进展在与基部侧的材料的边界处停止，可以充分发挥两种材料的性能，并且可以通过协同的方式提高保护性能影响。版权所有（C）2009，JPO＆INPIT

33. 发明专利

JP2008133160A Boron carbide sintered compact and method of manufacturing the same 有权
标题翻译：碳化硼烧结紧凑及其制造方法
公开(公告)号：JP2008133160A
公开(公告)日：2008-06-12
申请号：JP2006320965
申请日：2006-11-29
申请人： Kyocera Corp , 京セラ株式会社
发明人： HORIUCHI NOBUOKI , KAYAMA TEPPEI , NAKANISHI MASAHITO , ODA TAKEHIRO
IPC分类号： C04B35/563
CPC分类号： C04B35/563 , C04B35/64 , C04B35/6455 , C04B2235/3225 , C04B2235/3409 , C04B2235/3813 , C04B2235/3826 , C04B2235/402 , C04B2235/405 , C04B2235/422 , C04B2235/425 , C04B2235/428 , C04B2235/5445 , C04B2235/661 , C04B2235/668 , F41H5/0414 , F41H5/0492
摘要： PROBLEM TO BE SOLVED: To solve a problem in which a boron carbide sintered compact having high hardness has low efficiency of the propagation of crack in grinding because of its large grinding resistance and thereby has low workability. SOLUTION: The sintered compact comprises a boron carbide sintered compact containing boron carbide as a principal component and containing graphite and silicon carbide and having pores, wherein graphite is present mainly in a pore regulating surface where the pores are regulated and consequently the sintered compact has high grindability while keeping high hardness. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了解决由于其耐磨性较高而具有高硬度的碳化硼烧结体的磨削裂纹传播效率低的问题，因此具有低加工性。解决方案：烧结体包括含有碳化硼作为主要成分并含有石墨和碳化硅并具有孔的碳化硼烧结体，其中石墨主要存在于调节孔的孔调节表面中，因此烧结紧凑型具有高磨削性，同时保持高硬度。版权所有（C）2008，JPO＆INPIT

34. 发明专利

JP2007254205A Silicon nitride joined body, its production method and member for semiconductor production apparatus using the joined body 有权
标题翻译：硅氮化物接合体，其生产方法和半导体生产装置的使用接合体的装置
公开(公告)号：JP2007254205A
公开(公告)日：2007-10-04
申请号：JP2006080618
申请日：2006-03-23
申请人： Kyocera Corp , 京セラ株式会社
发明人： OSHIMA KAZUYOSHI , ODA TAKEHIRO , KAYAMA TEPPEI , TAKIGAWA KAZUAKI
IPC分类号： C04B37/00 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To obtain a silicon nitride hollow joined body having a low coefficient of thermal expansion and high strength, as a member for a semiconductor production apparatus. SOLUTION: In the silicon nitride hollow joined body, a pair of base bodies 1,4 composed of a silicon nitride-based sintered compact containing silicon nitride as a main component, erbium oxide (Er 2 O 3 ) and alumina (Al 2 O 3 ) are joined through a joining layer containing glass as a main component, fine crystallites of silicon nitride and an Er component. Thereby, the thermal expansion of the member can be suppressed to the utmost, and the deformation of the member caused by heat can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得具有低热膨胀系数和高强度的氮化硅中空接合体，作为半导体制造装置的构件。解决方案：在氮化硅中空接合体中，由以氮化硅为主要成分的氮化硅系烧结体构成的一对基体1,4是氧化铒（Er 2 通过含有玻璃的接合层作为主要成分，将氮化硅的微细晶粒（Al 3 O 3）与氧化铝（Al 2 O 3 SB 3）和呃组件。由此，可以最大程度地抑制构件的热膨胀，并且可以防止由热引起的构件的变形。版权所有（C）2008，JPO＆INPIT

35. 发明专利

JP2005213081A Silicon nitride sintered body and member for molten metal using the same 审中-公开
标题翻译：硅氮化物烧结体和用于金属的成员使用它们
公开(公告)号：JP2005213081A
公开(公告)日：2005-08-11
申请号：JP2004020593
申请日：2004-01-28
申请人： Kyocera Corp , 京セラ株式会社
发明人： ODA TAKEHIRO
IPC分类号： C04B35/584 , C04B41/85 , C04B41/87
摘要： PROBLEM TO BE SOLVED: To solve the problems that when a silicon nitride sintered body is exposed to a high-temperature fluid or the like, cracking or chipping easily occurs because of its low resistance to thermal impact, and particularly when it is used as a member to be immersed in a molten metal, slag is easily adhered to the surface, and the like. SOLUTION: The silicon nitride sintered body 1 comprises silicon nitride as a main component and has a surface 3 from which a plurality of needle crystals 4 comprising silicon nitride have jutted out, and the valley level of the surface 3 is 60% or lower. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了解决当氮化硅烧结体暴露于高温流体等时的问题，由于其耐热冲击性低，容易发生裂纹或碎裂，特别是当它是用作浸入熔融金属中的部件，炉渣易附着在表面上等。解决方案：氮化硅烧结体1包括氮化硅作为主要成分，并且具有表面3，多个由氮化硅构成的针状晶体4从该表面3突出，表面3的谷值为60％降低。版权所有（C）2005，JPO＆NCIPI

36. 发明专利

JP2004031099A Wafer heating apparatus 审中-公开
公开(公告)号：JP2004031099A
公开(公告)日：2004-01-29
申请号：JP2002185066
申请日：2002-06-25
申请人： Kyocera Corp , 京セラ株式会社
发明人： ODA TAKEHIRO
IPC分类号： H05B3/00 , H01L21/02 , H01L21/027 , H01L21/205 , H05B3/74
摘要： PROBLEM TO BE SOLVED: To resolve a problem in a wafer heating apparatus wherein there is a chance of a thermorunaway of a soaking plate when a thermocouple or a temperature controller fails during usage.
SOLUTION: The wafer heating apparatus using a one principal plane of the soaking plate comprising ceramics as a wafer mounting face and having a plurality of resistant exothermic bodies in another principal plane or an interior is comprised by providing a feeding part electrically connected with the plurality of resistant exothermic bodies in the other principal plane. It is provided with a safety circuit for preventing overheating of the soaking plate, and the thermocouple sending a signal to the safety circuit. The thermocouple is fixed to a surface of the soaking plate via a chip with a thermal conductivity of ≥20W/(m×K), and a distance of the chip from two to four outer rim parts of the resistant exothermic bodies is 1-30mm.
COPYRIGHT: (C)2004,JPO

37. 发明专利

JP2003069320A Manufacturing method of nonradiative dielectric line 有权
标题翻译：非线性电介质线的制造方法
公开(公告)号：JP2003069320A
公开(公告)日：2003-03-07
申请号：JP2001258373
申请日：2001-08-28
申请人： Kyocera Corp , 京セラ株式会社
发明人： ODA TAKEHIRO
IPC分类号： H01P3/16 , H01P11/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method with high reliability of manufacturing a nonradiative dielectric (NRD) guide with high performance such as a small electromagnetic wave propagation loss by enabling a dielectric line to be placed at a prescribed position with high accuracy and stably and strongly fixing the dielectric line for a long time. SOLUTION: The manufacturing method of the NRD guide uses a tool whose one side has a groove 12 formed in a pattern of a mirror image relation to a prescribed arrangement pattern of a dielectric line on the major side of parallel flat conductor plates 51, the dielectric line is contained in the groove 12, an adhesive 23 is coated to an upper side onto which the dielectric line is exposed or the arrangement pattern of the parallel flat conductor plates 51, the major side of the parallel flat conductor plates 51 and one side of the tool are faced with each other and the dielectric line is pressed onto the major side of the parallel flat conductor plates 51 with a load of 9.8×10 Pa or over to adhere the dielectric line to the arrangement pattern on the major side of the parallel flat conductor plates 51.
摘要翻译：要解决的问题：通过使介电线能够以高精度和稳定地放置在规定位置，提供具有高性能的非辐射电介质（NRD）引导件的高可靠性的制造方法，例如小的电磁波传播损耗并长时间强烈地固定介质线。解决方案：NRD导向器的制造方法使用一个工具，其一侧具有形成为平行平面导体板51的主侧上的介质线的规定布置图案的镜像关系图案的凹槽12，电介质线包含在槽12中，粘合剂23被涂覆到其上暴露介质线的上侧或平行扁平导体板51的平面扁平导体板51的平面图形，平行扁平导体板51的主面和工具彼此面对，并且介电线被压在平行扁平导体板51的主侧上，负载为9.8×10 -8 Pa或更大，以将介电线粘附到主要的布置图案上平行的扁平导体板51的一侧。

38. 发明专利

DE19519864A1 Silicon nitride sintered product 未知
公开(公告)号：DE19519864A1
公开(公告)日：1995-12-21
申请号：DE19519864
申请日：1995-05-31
申请人： KYOCERA CORP
发明人： ODA TAKEHIRO , TANAKA KOICHI , IWAIDA TOMOHIRO , YAMAMOTO SENTARO , KOHSAKA SHOJI , SATO MASAHIRO , UCHIMURA HIDEKI , TAJIMA KENICHI
IPC分类号： C04B35/593 , C04B35/587 , C04B35/591 , C04B35/65
摘要： Silicon nitride sintered product consists of not less than 70 mol.% beta -silicon nitride, and an element of gp. IIIa, at least lutecium, and oxygen as impurity. When the gp. IIIa element amt. and the oxygen amt. are calculated as RE2O3 of the gp. IIIa element and as SiO2 amt. corresponding to the oxygen, the total amt. of both components is 2-30 mol.%, and the mol. ratio SiO2/RE2O3 is 1.6-10. The intergranular phase of the sintered product contains a crystalline phase consisting of gp. IIIa element, silicon and oxygen. Prodn. of the sintered product is also claimed.

39. 发明专利

DE112004001567T5 未知
公开(公告)号：DE112004001567T5
公开(公告)日：2006-06-14
申请号：DE112004001567
申请日：2004-08-25
申请人： KYOCERA CORP
发明人： OKAWA YOSHIHIRO , ODA TAKEHIRO
IPC分类号： C04B35/591
摘要： A silicon nitride sintered material includes a silicon nitride crystal and a grain boundary layer that contains at least two of a first metal silicide (a metal silicide having, as a first metal element, at least one selected from the group consisting of Fe, Cr, Mn and Cu), a second metal silicide (a metal silicide having, as a second metal element, at least one of W or Mo) and a third metal silicide (a metal silicide having a plurality of metal elements including the first metal element and the second metal element), wherein the grain boundary layer has neighboring phase where at least two of the first through third metal silicides exist in contact with each other.

40. 发明专利

DE112004001567B4 Auf Siliciumnitrid basierendes Sintermaterial und Verfahren zur Erzeugung desselben und ein schmelzfestes Bauteil und ein verschleissfestes Bauteil unter Verwendung desselben 未知
公开(公告)号：DE112004001567B4
公开(公告)日：2010-09-30
申请号：DE112004001567
申请日：2004-08-25
申请人： KYOCERA CORP
发明人： OKAWA YOSHIHIRO , ODA TAKEHIRO
IPC分类号： C04B35/591

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