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    • 40. 发明授权
    • Aerogel thin film formation from multi-solvent systems
    • 从多溶剂系统形成气凝胶薄膜
    • US6130152A
    • 2000-10-10
    • US746679
    • 1996-11-14
    • Douglas M. SmithGregory P. JohnstonWilliam C. AckermanShin-Puu JengBruce E. Gnade
    • Douglas M. SmithGregory P. JohnstonWilliam C. AckermanShin-Puu JengBruce E. Gnade
    • B01F3/12C01B33/14C01B33/145C01B33/155C01B33/158H01L21/312H01L21/316H01L21/768
    • C01B33/158C01B33/145C01B33/155H01L21/02126H01L21/02216H01L21/02282H01L21/3122H01L21/7682H01L21/31695
    • This invention pertains generally to precursors and deposition methods suited to aerogel thin film fabrication. An aerogel precursor sol which contains an oligomerized metal alkoxide (such as TEOS), a high vapor pressure solvent (such as ethanol) and a low vapor pressure solvent (such as water and 1-butanol) is disclosed. By a method according to the present invention, such a precursor sol is applied as a thin film to a semiconductor wafer, and the high vapor pressure solvent is allowed to evaporate while evaporation of the low vapor pressure solvent is limited, preferably by controlling the atmosphere adjacent to the wafer. The reduced sol is then allowed to gel at a concentration determined by the ratio of metal.alkoxide to low vapor pressure solvent. One advantage of the present invention is that it provides a stable, spinnable sol for setting film thickness and providing good planarity and gap fill for patterned wafers. In addition, however, the reduced sol may be gelled rapidly from a known sol concentration keyed to the desired final density of the aerogel thin film and largely independent of film thickness and spin conditions.
    • 本发明一般涉及适用于气凝胶薄膜制造的前体和沉积方法。 公开了含有低聚金属醇盐(如TEOS),高蒸气压溶剂(如乙醇)和低蒸气压溶剂(如水和1-丁醇))的气凝胶前体溶胶。 通过根据本发明的方法,将这种前体溶胶作为薄膜施加到半导体晶片,并且在蒸发低蒸气压溶剂的同时,优选通过控制气氛,使高蒸气压溶剂蒸发 邻近晶片。 然后将还原的溶胶以由金属醇盐与低蒸气压溶剂的比例确定的浓度凝胶化。 本发明的一个优点是提供了一种稳定的可纺丝溶胶,用于设定膜厚度并为图案化晶片提供良好的平面度和间隙填充。 然而,此外,还原的溶胶可以从已知的溶胶浓度快速凝胶化,所述溶胶浓度与气凝胶薄膜的所需最终密度密切相关,并且在很大程度上与膜厚度和旋转条件无关。