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31. 发明申请

US20070056566A1 FUEL INJECTION CONTROL METHOD AND FUEL INJECTION CONTROL APPARATUS FOR ENGINE 失效
标题翻译：燃油喷射控制方法和发动机燃油喷射控制装置
公开(公告)号：US20070056566A1
公开(公告)日：2007-03-15
申请号：US11357038
申请日：2006-02-21
申请人： Naoaki Yanagisawa , Tsutomu Murakami
发明人： Naoaki Yanagisawa , Tsutomu Murakami
IPC分类号： F02D41/10
CPC分类号： F02D41/045 , F02D41/32 , F02D2200/0406 , F02D2200/703
摘要： In a fuel injection control method of an engine, an electronic control unit calculates a pressure integrated value for one combustion cycle by detecting a combustion cycle and continuously detecting a suction air pipe pressure and determines that the engine is under an accelerated state such that a pressure difference determined by comparing the pressure integrated value with the pressure integrated value at the preceding combustion cycle becomes equal to or more than a predetermined acceleration determining reference value, thereby increasing a fuel amount. The electronic control unit determines that the engine is under the accelerated state at a particular time when the difference between the pressure integrated value and the atmospheric pressure becomes equal to or less than a reference value and a pressure difference integrated value obtained by integrating each of the pressure differences within an integrating period becomes equal to or more than another reference value.
摘要翻译：在发动机的燃料喷射控制方法中，电子控制单元通过检测燃烧循环来计算一个燃烧循环的压力积分值，并连续检测吸入空气管道压力，并确定发动机处于加速状态，使得压力通过将压力积分值与前一燃烧循环中的压力积分值进行比较而确定的差异变为等于或大于预定加速度确定基准值，由此增加燃料量。电子控制单元在压力积分值和大气压力之间的差成为基准值的特定时刻判定发动机处于加速状态，并且通过将积分期间内的压差变为等于或大于另一参考值。

32. 发明申请

US20050109388A1 Photovoltaic device and manufacturing method thereof 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20050109388A1
公开(公告)日：2005-05-26
申请号：US10971130
申请日：2004-10-25
申请人： Tsutomu Murakami , Shoji Nishida
发明人： Tsutomu Murakami , Shoji Nishida
IPC分类号： H01L31/04 , H01L31/00 , H01L31/0236 , H01L31/0368 , H01L31/075 , H01L31/077 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/03682 , H01L31/077 , H01L31/182 , Y02B10/12 , Y02E10/546 , Y02P70/521
摘要： There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.
摘要翻译：提供一种光电器件，其中在沉积在衬底上的薄膜半导体中形成至少一个pin-junction，所述衬底包括：包括多晶硅的衬底; 以及通过液相生长在基底上形成的多晶硅层，其中多晶硅层的至少一部分表面具有由小面表面构成的凹凸。光伏器件由于不存在优选的不均匀性而导致光电转换效率的降低，由于使用昂贵的材料而导致的成本增加，并且光电器件的生产量降低，并且具有优选的特性和高的生产率。

33. 发明授权

US5863412A Etching method and process for producing a semiconductor element using said etching method 失效
标题翻译：蚀刻方法和使用所述蚀刻方法制造半导体元件的方法
公开(公告)号：US5863412A
公开(公告)日：1999-01-26
申请号：US731663
申请日：1996-10-17
申请人： Hirofumi Ichinose , Ippei Sawayama , Akio Hasebe , Tsutomu Murakami , Masaya Hisamatsu , Satoshi Shinkura , Yukie Ueno
发明人： Hirofumi Ichinose , Ippei Sawayama , Akio Hasebe , Tsutomu Murakami , Masaya Hisamatsu , Satoshi Shinkura , Yukie Ueno
IPC分类号： C25F3/12 , C25F3/14 , H01L31/18 , H01L31/20 , C25F3/02
CPC分类号： C25F3/14 , C25F3/12 , H01L31/186 , H01L31/1884 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： A method for etching an object having a portion to be etched on the surface thereof, comprising a step of immersing said object in an electrolyte solution such that said object serves as a negative electrode; a step of arranging a counter electrode having a pattern corresponding to a desired etching pattern to be formed at said portion to be etched of said object in said electrolyte solution so as to maintain a predetermined interval between said counter electrode and said object, and a step of applying a direct current or a pulse current between said object and said counter electrode to etch said portion to be etched of said object into a pattern corresponding to said pattern of said counter electrode.
摘要翻译：一种在其表面上蚀刻具有待蚀刻部分的物体的方法，包括将所述物体浸入电解质溶液中以使所述物体用作负极的步骤; 在所述电解质溶液中，在所述物体的被蚀刻部分上形成具有对应于期望蚀刻图案的图案的对电极，以保持所述对置电极与所述物体之间的预定间隔的步骤;以及步骤在所述物体和所述对电极之间施加直流电流或脉冲电流，以将所述物体的待蚀刻部分刻蚀成与所述对电极的所述图案对应的图案。

34. 发明授权

US5028488A Functional ZnSe.sub.1-x Te.sub.x :H deposited film 失效
标题翻译：功能ZnSe1-xTex：H沉积膜
公开(公告)号：US5028488A
公开(公告)日：1991-07-02
申请号：US226819
申请日：1988-08-01
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
IPC分类号： C30B33/00 , C30B29/22 , C30B29/30 , C30B33/02 , G02F1/03 , G02F1/05 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/1832 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02966 , H01L31/0392 , H01L31/068 , Y02E10/547 , Y10T428/31678
摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.
摘要翻译：功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例每单位体积的畴数在65至85体积％范围内。还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。这些膜适用于制备诸如光电元件的高功能器件。

35. 发明授权

US5008726A PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % 失效
标题翻译：含有1〜4原子％的Zn，Se，Te，H的PIN结光电元件
公开(公告)号：US5008726A
公开(公告)日：1991-04-16
申请号：US273070
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/02966 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1832 , Y02E10/548
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

36. 发明授权

US4959106A Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有半导体层的光电元件包括含有至少ZN，SE和H的非单晶材料，其量为1至4原子％
公开(公告)号：US4959106A
公开(公告)日：1990-09-25
申请号：US399396
申请日：1989-08-28
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L21/363 , H01L21/365 , H01L31/0296 , H01L31/068 , H01L31/18
CPC分类号： H01L31/073 , H01L21/0237 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02963 , H01L31/02966 , H01L31/068 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02E10/547
摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子，可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

37. 外观设计

USD254303S Motor vehicular citizens' band transceiver 失效
公开(公告)号：USD254303S
公开(公告)日：1980-02-26
申请号：US817294
申请日：1977-07-20
申请人： Toshio Igo , Kikuo Ohta , Tsutomu Murakami , Shuhei Taguchi
设计人： Toshio Igo , Kikuo Ohta , Tsutomu Murakami , Shuhei Taguchi

38. 外观设计

USD247669S Combined transceiver remote-control microphone 失效
公开(公告)号：USD247669S
公开(公告)日：1978-04-04
申请号：US780179
申请日：1977-03-22
申请人： Tsutomu Murakami , Benito Mishiro
设计人： Tsutomu Murakami , Benito Mishiro

39. 发明申请

US20120219408A1 CYLINDRICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：圆柱结构及其制造方法
公开(公告)号：US20120219408A1
公开(公告)日：2012-08-30
申请号：US13505658
申请日：2010-11-05
申请人： Takashi Harada , Yu Shigenari , Masayori Miyashita , Tsutomu Murakami
发明人： Takashi Harada , Yu Shigenari , Masayori Miyashita , Tsutomu Murakami
IPC分类号： B32B37/12 , F04D23/00
CPC分类号： F04D29/522 , B29C53/562 , B29C53/58 , B29C70/32 , F02K9/00
摘要： A method for manufacturing a cylindrical structure having an axial direction includes: winding a fabric around a mandrel in a circumferential direction that is perpendicular to the axial direction, the fabric containing first fibers oriented in a first direction intersecting the circumferential direction; winding a roving into a helical shape around the mandrel, the roving containing second fibers oriented in a longitudinal direction of the roving; and joining the fabric and the roving together by using a resin.
摘要翻译：一种制造具有轴向的圆柱形结构的方法包括：沿与轴向垂直的圆周方向围绕心轴缠绕织物，所述织物包含沿与圆周方向交叉的第一方向取向的第一纤维; 将纱线卷绕在心轴周围的螺旋形状中，粗纱包含沿着粗纱的纵向取向的第二纤维; 并通过使用树脂将织物和粗纱接合在一起。

40. 发明申请

US20110020130A1 GAS TURBINE ENGINE BLADE FOR AIRCRAFT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：用于飞机的燃气涡轮发动机叶片及其制造方法
公开(公告)号：US20110020130A1
公开(公告)日：2011-01-27
申请号：US12934339
申请日：2009-03-27
申请人： Tsutomu Murakami , Hideo Morita , Takahiro Ogi , Ikuo Okumura , Katsuyoshi Moriya
发明人： Tsutomu Murakami , Hideo Morita , Takahiro Ogi , Ikuo Okumura , Katsuyoshi Moriya
IPC分类号： F04D29/38 , B23P15/02
CPC分类号： F01D5/282 , B29C70/30 , B29C70/46 , B29D99/0025 , B29K2105/0872 , B29L2031/082 , B29L2031/087 , F01D5/141 , F04D29/023 , F04D29/324 , F04D29/388 , F05D2230/26 , F05D2300/43 , F05D2300/603 , Y02T50/672 , Y02T50/673 , Y10T29/49336
摘要： A gas turbine engine blade for aircraft which has a 3-dimensional blade surface shape twisted around a center line at an angle of 45 degrees or more and 70 degrees or less, wherein the aforementioned blade is provided with multiple composite material prepregs which contain reinforced fiber and which are integrally molded after being laminated in the thickness direction, and the aforementioned reinforced fiber runs continuously without interruption within each layer of the aforementioned composite material prepregs.
摘要翻译：一种用于飞行器的燃气涡轮发动机叶片，其具有以45度以上且70度以下的角度绕中心线扭转的3维叶片表面形状，其中，所述刀片设置有多个复合材料预浸料，其包含增强纤维并且在厚度方向层叠后一体成型，上述复合材料预浸料的各层内的上述增强纤维连续地不间断地延伸。

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