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    • 31. 发明申请
    • HARD DISK DRIVE APPARATUS WITH THERMALLY ASSISTED HEAD
    • 硬盘驱动装置与热辅助头
    • US20120134246A1
    • 2012-05-31
    • US12955012
    • 2010-11-29
    • Koji SHIMAZAWA
    • Koji SHIMAZAWA
    • G11B13/04
    • G11B5/02G11B5/40G11B5/455G11B5/4866G11B2005/001G11B2005/0021
    • A hard disk drive includes a recording medium and a thermally assisted type magnetic head. The controller determines one output current of a photodiode as a first saturated output current, the one output current being defined where temperature measured by a temperature sensor is a first temperature and where signal-to-noise-ratio (SNR) of the reproducing signal current of the reproducing element is saturated with respect to an increase in output current of the photodiode, and another output current of the photodiode as a second saturated output current, the another output current being defined where temperature measured by the temperature sensor is a second temperature, which is different from the first temperature, and where SNR of the reproducing signal current of the reproducing element is saturated with respect to an increase in the output current of the photodiode. A target saturated output current at operation temperature is estimated from operation temperature measured by the temperature sensor during the hard disk device operation, the first and second temperatures, and the first and second saturated output currents; and the driving current of the laser diode is controlled in order to obtain the estimated target saturated output current.
    • 硬盘驱动器包括记录介质和热辅助型磁头。 控制器将一个光电二极管的一个输出电流确定为第一个饱和输出电流,一个输出电流被定义为温度传感器测量的温度是第一个温度,而再生信号电流的信噪比(SNR) 相对于光电二极管的输出电流的增加和作为第二饱和输出电流的光电二极管的另一输出电流而饱和再生元件,另一输出电流被定义为由温度传感器测量的温度是第二温度, 其与第一温度不同,并且相对于光电二极管的输出电流的增加,再现元件的再现信号电流的SNR饱和。 在硬盘装置运行期间,第一和第二温度以及第一和第二饱和输出电流中,由温度传感器测量的运行温度估算运行温度下的目标饱和输出电流; 并且控制激光二极管的驱动电流以获得估计的目标饱和输出电流。
    • 32. 发明申请
    • THERMALLY ASSISTED HEAD HAVING REFLECTION MIRROR FOR PROPAGATING LIGHT
    • 具有反射镜的热辅助头用于传播光
    • US20110310713A1
    • 2011-12-22
    • US12820290
    • 2010-06-22
    • Eiji KOMURATsutomu CHOUKoji SHIMAZAWA
    • Eiji KOMURATsutomu CHOUKoji SHIMAZAWA
    • G11B11/00G11B5/48
    • G11B5/314G11B5/6088G11B2005/001G11B2005/0021
    • A magnetic head includes a magnetic head slider; and a laser diode that is positioned on a surface of a side opposite to a substrate of the magnetic head slider and that generates laser light; the magnetic head slider including: a core through which the laser light emitted from the laser diode propagates as propagating light; a cladding that covers the core and that has a refractive index that is smaller than that of the core; a near field light generating means that generates near field light from the propagating light on an air bearing surface; and a main pole for recording that is disposed adjacent to the near field light generating means and of which an edge part is positioned on the air bearing surface. The core includes a reflection layer and a seed layer, the reflection layer has a refractive index smaller than that of the core, and has a reflection surface on which laser light emitted from the laser diode reflects so as to enter the core as the propagating light, and the seed layer is positioned on a back surface of the reflection surface of the reflection layer and suppresses plasmon generation on the reflection surface.
    • 磁头包括磁头滑块; 以及激光二极管,其位于与磁头滑块的基板相反的一侧的表面上,并产生激光; 磁头滑块包括:从激光二极管发射的激光通过其传播的传播光; 覆盖芯并且折射率小于芯的折射率的包层; 近场光产生装置,其从空气轴承表面上的传播光产生近场光; 以及与近场光产生装置相邻设置并且边缘部分位于空气支承表面上的用于记录的主极。 芯包括反射层和种子层,反射层的折射率小于芯的折射率,并且具有反射表面,激光二极管发射的激光以其反射的方式进入芯,作为传播光 并且种子层位于反射层的反射面的背面,并抑制反射面上的等离子体发生。
    • 35. 发明申请
    • METHOD FOR INSPECTING MAGNETIC CHARACTERISTICS OF A PLURALITY OF THIN MAGNETIC HEADS BY MEANS OF LOCAL APPLICATION OF MAGNETIC FIELD
    • 通过磁场局部应用检测薄磁头多重磁性特征的方法
    • US20090219018A1
    • 2009-09-03
    • US12041532
    • 2008-03-03
    • Koji SHIMAZAWA
    • Koji SHIMAZAWA
    • G01R33/12
    • G01R33/1207
    • A method for inspecting magnetic characteristics of a thin film magnetic head that is arranged in a row bar includes: a step of preparing a row bar having sliders including a thin film magnetic head formed therein and lapping guides having magnetoresistance effect; a step of preparing a magnetic field applying row bar having first and second magnetic field applying elements; a first positioning step in which said magnetic field applying row bar is arranged opposite to said row bar; a second positioning step in which a relative movement between said magnetic field applying row bar and said row bar is made so that at least one of said lapping guides exhibits a largest output voltage; and a measurement step in which a relationship between the intensity of the magnetic field and an output voltage of a magnetic field sensor is obtained.
    • 用于检查排列在行杆中的薄膜磁头的磁特性的方法包括:制备具有形成在其中的薄膜磁头和具有磁阻效应的研磨导轨的滑块的行杆的步骤; 制备具有第一和第二磁场施加元件的磁场施加行棒的步骤; 第一定位步骤,其中所述磁场施加行条与所述行条相对布置; 第二定位步骤,其中制成所述磁场施加行条和所述行条之间的相对运动,使得至少一个所述研磨导轨具有最大的输出电压; 以及测量步骤,其中获得磁场强度与磁场传感器的输出电压之间的关系。
    • 36. 发明申请
    • MAGNETO-RESISTANCE EFFECT ELEMENT HAVING STACK WITH DUAL FREE LAYER AND A PLURALITY OF BIAS MAGNETIC LAYERS
    • 具有双层自由层和多重偏磁层的磁阻效应元件
    • US20090213502A1
    • 2009-08-27
    • US12036530
    • 2008-02-25
    • Daisuke MIYAUCHIKoji SHIMAZAWATsutomu CHOUTakahiko MACHITA, I
    • Daisuke MIYAUCHIKoji SHIMAZAWATsutomu CHOUTakahiko MACHITA, I
    • G11B5/33G11B5/84
    • G11B5/398B82Y25/00G01R33/093G11B5/3932H01L43/08H01L43/12
    • A magneto-resistance effect element comprises: a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer whose magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein the upper shield electrode layer and the lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield the magneto-resistance effect stack; a first bias magnetic layer which is provided on a surface of the magneto-resistance effect stack opposite to an air bearing surface, and wherein the first bias magnetic layer is magnetized in a direction perpendicular to said air bearing surface; and a pair of second bias magnetic layers provided on respective both sides of said magneto-resistance effect stack in a track width direction, and wherein the second bias magnetic layers are magnetized in a direction substantially parallel to said track width direction; wherein the magnetic pole on a surface of one of said second bias magnetic layers which faces said magneto-resistance effect stack has the same polarity as the magnetic pole on a surface of the other of said second bias magnetic layers which faces said magneto-resistance effect stack, and has a polarity different from the polarity of the magnetic pole on a surface of said first bias magnetic layer which faces said magneto-resistance effect stack.
    • 磁阻效应元件包括:磁阻效应堆,其包括磁化方向根据外部磁场而变化的上磁性层和下磁性层,夹在上磁层和下磁层之间的非磁性中间层 ; 上屏蔽电极层和下屏蔽电极层,其被设置成在堆叠磁阻效应堆叠的方向上夹着磁阻效应堆叠,其中上屏蔽电极层和下屏蔽电极层提供感测电流 在层叠方向上磁屏蔽磁阻效应堆; 第一偏磁层,其设置在与空气轴承表面相对的磁阻效应堆的表面上,并且其中所述第一偏磁层在垂直于所述空气轴承表面的方向上被磁化; 以及一对第二偏置磁性层,其设置在所述磁阻效应叠层的磁道宽度方向的两侧,并且其中所述第二偏置磁性层沿与所述磁道宽度方向大致平行的方向被磁化; 其特征在于,面对所述磁阻效应叠层的所述第二偏置磁性层之一的表面上的磁极具有与所述第二偏置磁性层另一个面对所述磁阻效应的表面上的磁极相同的极性 并且具有与面对所述磁阻效应堆叠的所述第一偏磁层的表面上的磁极的极性不同的极性。
    • 38. 发明申请
    • TACTILE SENSOR UTILIZING MICROCOILS WITH SPIRAL SHAPE
    • 触觉传感器利用螺旋形状的微型计算机
    • US20090045820A1
    • 2009-02-19
    • US11839840
    • 2007-08-16
    • Koji SHIMAZAWA
    • Koji SHIMAZAWA
    • G01L1/14H01F41/04
    • H01F17/0006H01F7/0294H01F21/04H01F21/08H01F41/0266H01F41/0273H01F41/046Y10T29/49002Y10T29/4902
    • Provided is a material for tactile sensor, which is easy to be formed, and in which the shape, size and orientation of coils dispersed in the medium are sufficiently controlled. The tactile-sensitive material comprises a medium and a plurality of micro coils dispersed in the medium and constituting a LCR resonance circuit, and wherein each of the plurality of micro coils comprises at least one spiral coil portion, and coil axes of the plurality of micro coils are aligned along at least one direction and/or directed in at least one plane. When a tactile stress is applied to the tactile-sensitive material, the C component is varied significantly, which contributes to the improvement in sensitivity of the tactile sensor. Further, by providing a core at the coil center, the sensitivity is more improved.
    • 提供易于形成的用于触觉传感器的材料,其中分散在介质中的线圈的形状,尺寸和取向被充分地控制。 触敏材料包括分散在介质中并构成LCR谐振电路的介质和多个微线圈,并且其中多个微型线圈中的每一个包括至少一个螺旋线圈部分和多个微型线圈的线圈轴 线圈沿着至少一个方向对准和/或定向在至少一个平面中。 当对触感敏感材料施加触觉应力时,C分量显着变化,这有助于提高触觉传感器的灵敏度。 此外,通过在线圈中心设置芯,灵敏度进一步提高。
    • 39. 发明申请
    • MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD
    • 磁阻效应元件和薄膜磁头
    • US20080218907A1
    • 2008-09-11
    • US11682421
    • 2007-03-06
    • Tomohito MIZUNOKei HIRATAYoshihiro TSUCHIYAKoji SHIMAZAWA
    • Tomohito MIZUNOKei HIRATAYoshihiro TSUCHIYAKoji SHIMAZAWA
    • G11B5/39
    • G11B5/59683
    • A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm.
    • 用于薄膜磁头的磁阻效应元件(MR元件)由层叠的缓冲层,反铁磁层,钉扎层,间隔层,自由层和覆盖层构成 并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。 被钉扎层包括其中磁化方向固定的外层,非磁性中间层和作为铁磁层的内层。 间隔层包括第一非磁性金属层,半导体层和第二非磁性金属层。 第一非磁性金属层和第二非磁性金属层包括厚度范围最小为0.2nm至最大2.0nm的CuPt膜,并且Pt含量范围为最小值5at%至最大值 为25原子%。 半导体层包括厚度范围为1.0nm至最大2.5nm的ZnO膜,ZnS膜或GaN膜。