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31. 发明申请

US20050179342A1 Piezoelectric actuator and liquid jet head 有权
标题翻译：压电致动器和液体喷头
公开(公告)号：US20050179342A1
公开(公告)日：2005-08-18
申请号：US10492355
申请日：2003-05-15
申请人： Takamitsu Higuchi , Setsuya Iwashita
发明人： Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： B41J2/14 , H01L41/047 , H01L41/22 , H01L41/319 , H01L41/18
CPC分类号： H01L41/0973 , B41J2/14233 , B41J2202/03 , H01L41/047 , H01L41/0478 , H01L41/0815 , H01L41/319
摘要： A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.
摘要翻译：提供了当使用（100）取向的钌酸锶作为底部电极时具有最佳层结构的压电致动器。该压电致动器包括由（100）取向氧化钇稳定的氧化锆，CeO 2 2或ZrO 2 2构成的隔膜30，其在（100）上外延生长，取向Si衬底20，形成在隔膜上并由（001）取向REBa 2 Cu 3 O x x构成的缓冲层41，底部形成在缓冲层上并由（100）取向钌酸锶构成的电极42，形成在底部电极上并由（100）取向PZT构成的压电层43和形成在压电层上的顶部电极44。

32. 发明申请

US20050128681A1 Capacitor and its manufacturing method, and semiconductor device 失效
标题翻译：电容器及其制造方法以及半导体器件
公开(公告)号：US20050128681A1
公开(公告)日：2005-06-16
申请号：US11004591
申请日：2004-12-03
申请人： Setsuya Iwashita , Motohisa Noguchi , Hiromu Miyazawa , Takamitsu Higuchi
发明人： Setsuya Iwashita , Motohisa Noguchi , Hiromu Miyazawa , Takamitsu Higuchi
IPC分类号： H01L27/04 , H01G4/06 , H01L21/02 , H01L21/822
CPC分类号： H01L28/55
摘要： A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto.
摘要翻译：提供一种电容器，其具有绝缘膜插入在第一电极和第二电极之间的结构。绝缘膜包括SrTiO 3 3主要成分，并添加至少一种Si和Ge。

33. 发明申请

US20050096230A1 Electronic device and electronic apparatus 审中-公开
标题翻译：电子设备和电子设备
公开(公告)号：US20050096230A1
公开(公告)日：2005-05-05
申请号：US11008761
申请日：2004-12-08
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01G2/00
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.
摘要翻译：通过在无机非晶层或有机固体层上沿期望的方向外延生长钙钛矿型氧化物薄膜，高度改善电子器件的性能; 此外，通过将电子器件结合到集成电路中提供高性能电子器件，其中在无机非晶层或有机固体层上形成氧化物薄层，并且钙钛矿型氧化物薄膜外延生长在氧化物薄层可以是氧化锶，氧化镁，氧化铈，氧化锆，钇稳定的氧化锆和钛酸锶中的至少一种; 作为钙钛矿型氧化物薄膜，例如使用作为压电体或铁电体材料的钙钛矿型氧化物薄膜。

34. 发明授权

US06849861B2 Electronic device and electronic apparatus 失效
公开(公告)号：US06849861B2
公开(公告)日：2005-02-01
申请号：US10108180
申请日：2002-03-27
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01L29/06
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

35. 发明授权

US06779878B2 Piezoelectronic actuator and liquid jetting head 失效
标题翻译：压电电子执行器和液体喷头
公开(公告)号：US06779878B2
公开(公告)日：2004-08-24
申请号：US10314418
申请日：2002-12-09
申请人： Takamitsu Higuchi , Setsuya Iwashita , Koji Sumi , Masami Murai
发明人： Takamitsu Higuchi , Setsuya Iwashita , Koji Sumi , Masami Murai
IPC分类号： B41J2045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1628 , B41J2/1634 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2202/03 , H01L41/0477 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/318
摘要： The present invention provides an optimum layer structure for a piezoelectric actuator in which (100) orientation strontium ruthenate is used as a bottom electrode. The piezoelectric actuator comprises a Si substrate 20, a diaphragm 30 comprising (110) or (100) orientation strontium oxide which is formed thereon by way of epitaxial growth, a bottom electrode 42 comprising (100) orientation strontium ruthenate having a perovskite structure, a piezoelectric layer 43 comprising (100) orientation PZT, and a top electrode 44.
摘要翻译：本发明提供一种用于压电致动器的最佳层结构，其中（100）取向的钌酸锶用作底部电极。压电致动器包括Si衬底20，包括通过外延生长在其上形成的（110）或（100）取向氧化锶的隔膜30，包括具有钙钛矿结构的（100）取向钌酸锶的底部电极42，包括（100）取向PZT的压电层43和顶部电极44。

36. 发明授权

US06737690B2 Ferroelectronic memory and electronic apparatus 失效
标题翻译：铁电记忆体和电子仪器
公开(公告)号：US06737690B2
公开(公告)日：2004-05-18
申请号：US10105042
申请日：2002-03-22
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
IPC分类号： H01C31119
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/31604 , H01L27/105 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/60 , Y10S257/906
摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.
摘要翻译：本发明涉及具有优异的集成度的矩阵型存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度。如下实现具有集成和存储特性的强电介质存储器，其中铁电层的磁滞曲线的角度得到改善。也就是说，采用其中存储单元阵列和外围电路处于彼此分离的平面中的结构，并且使铁电层经由缓冲器和第一信号电极经历外延生长到Si单晶。

37. 发明授权

US06720846B2 Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
标题翻译：具有KNb03压电薄膜，频率滤波器，振荡器，电子电路和电子设备的表面声波器件
公开(公告)号：US06720846B2
公开(公告)日：2004-04-13
申请号：US10102181
申请日：2002-03-20
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H03H964
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/0542
摘要： Surface acoustic wave device having a high k2, and a frequency filter, oscillator, electronic circuit and electronic device employing this surface acoustic wave device is provided, wherein a first oxide thin film layer comprising SrO or MgO and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (110) Si substrate, or a first oxide thin film layer comprising CeO2, ZrO2 or yttrium-stabilized zirconia and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (100) Si substrate, a KNbO3 piezoelectric thin film being then formed on top of either of these second oxide thin film layers, and then, a protective film comprising oxide or nitride is formed on top of the KNbO3 piezoelectric thin film, finally, at least one electrode is formed on top of this protective film, to form a surface acoustic wave device, which surface acoustic wave device is employed to form a frequency filter, oscillator, electronic circuit, or electronic device.
摘要翻译：提供具有高k <2的表面声波器件，以及使用该声表面波器件的频率滤波器，振荡器，电子电路和电子器件，其中包括SrO或MgO的第一氧化物薄膜层和第二氧化物薄膜在（110）Si衬底的顶部依次形成包含SrTiO 3的层，或者包括CeO 2，ZrO 2或钇稳定的氧化锆的第一氧化物薄膜层和包含SrTiO 3的第二氧化物薄膜层依次形成在（100））Si衬底，然后在这些第二氧化物薄膜层之一上形成KNbO3压电薄膜，然后在KNbO3压电薄膜的顶部形成包含氧化物或氮化物的保护膜，最后至少一个电极形成在该保护膜的顶部上，形成表面声波装置，该声表面波装置用于形成频率滤波器，振荡器，电子电路或电子设备。

38. 发明授权

US06510074B2 Ferroelectric memory having a BaTiO3 recording layer oriented in a <111> direction 有权
标题翻译：具有沿<111>方向取向的BaTiO 3记录层的铁电存储器
公开(公告)号：US06510074B2
公开(公告)日：2003-01-21
申请号：US10103681
申请日：2002-03-21
申请人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
发明人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： G11C1122
CPC分类号： H01L27/105 , H01L27/11502
摘要： A ferroelectric memory element and an electronic apparatus provided with this ferroelectric memory element are provided with a thin film recording layer of less than 50 nm film thickness having a high polarization moment and a high Curie temperature, wherein a recording layer of BaTiO3 is fabricated so as to be oriented in a pseudo-cubic system direction in a trigonal crystal structure, and in order to increase the polarization moment and Curie temperature, the unit cell in BaTiO3 film is elongated more than 2% in the pseudo-cubic system direction compared with the unit cell in a bulk material of BaTiO3, wherein in order to produce lattice strain in the crystal structure of the recording layer, the recording layer is grown epitaxially on the electrode layer that serves as the base layer, the ferroelectric memory element being provided with the recording layer, and the electronic apparatus being provided with the ferroelectric memory element.
摘要翻译：具有这种铁电存储元件的铁电存储元件和电子设备设置有具有高极化矩和高居里温度的小于50nm薄膜厚度的薄膜记录层，其中制造BaTiO 3的记录层，以便为了在三角晶体结构中以拟立方体方向<111>方向取向，为了增加极化力矩和居里温度，BaTiO 3膜中的晶胞在假立方体系中延伸超过2％ 111>方向与BaTiO 3的块状材料中的单元电池相比，其中为了在记录层的晶体结构中产生晶格应变，在作为基极层的电极层上外延生长记录层，铁电体存储元件设置有记录层，并且电子设备设置有铁电存储元件。

39. 发明授权

US5804835A Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions 失效
标题翻译：操作包括超导源极，漏极和沟道区的高温超导器件的方法
公开(公告)号：US5804835A
公开(公告)日：1998-09-08
申请号：US463322
申请日：1995-06-05
申请人： Taketomi Kamikawa , Eiji Natori , Setsuya Iwashita , Tatsuya Shimoda
发明人： Taketomi Kamikawa , Eiji Natori , Setsuya Iwashita , Tatsuya Shimoda
IPC分类号： H01L39/14 , H01L39/16 , H01L39/22 , H01L29/12
CPC分类号： H01L39/146 , H01L39/16
摘要： This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered. And in the case of the 3-terminal superconductive device, the switching characteristics can be improved.
摘要翻译：这是一种超导装置的发明，该超导装置配备有第一超导电极，第二超导电极和由连接这些超导电极的超导材料制成的结，其中存在2端或3端超导装置，其中使用处于比第一和第二超导电极弱的超导状态的接合处或接近超导状态的正常导电状态。使用第一和第二超导电极和结的临界电流，临界温度，对电势和载流子密度之间的差异作为将结点置于上述状态的手段。基于上述方法，可以提供具有很少图案规则限制并且易于制造的超导装置。并且在3端子超导装置的情况下，可以提高开关特性。

40. 发明授权

US07522388B2 Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane 有权
标题翻译：磁阻效应元件具有通过具有预定取向平面的过渡金属氧化物层形成在基底衬底上的较低磁性层
公开(公告)号：US07522388B2
公开(公告)日：2009-04-21
申请号：US11034273
申请日：2005-01-12
申请人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
发明人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F1/401 , H01F10/1933 , H01F10/3254 , H01F41/302 , H01L27/228 , H01L43/12
摘要： A magnetoresistance effect element is provided and includes a memory layer, an insulating layer and a fixed magnetic layer successively stacked on a substrate. The memory layer is formed on the substrate through a transition metal oxide layer having a predetermined orientation plane. A buffer layer is preferably provided on a lower layer side of the transition metal oxide layer.
摘要翻译：提供了磁阻效应元件，并且包括依次层叠在基板上的存储层，绝缘层和固定磁性层。存储层通过具有预定取向平面的过渡金属氧化物层形成在衬底上。缓冲层优选设置在过渡金属氧化物层的下层侧。

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