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    • 33. 发明授权
    • Plasma process device
    • 等离子体处理装置
    • US6014943A
    • 2000-01-18
    • US928026
    • 1997-09-11
    • Junichi AramiHiroo OnoTomomi KondoKoji Miyata
    • Junichi AramiHiroo OnoTomomi KondoKoji Miyata
    • H01J37/32C23C16/00
    • H01J37/32082H01J37/32623H01J37/3266
    • A plasma process device includes a process vessel having a plasma generating area therein, a susceptor provided in the process vessel for supporting a substrate having a process surface, and a gas inlet means for introducing a process gas into the plasma generating area. A dipole ring magnet is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction.
    • 等离子体处理装置包括其中具有等离子体产生区域的处理容器,设置在处理容器中的基座,用于支撑具有工艺表面的衬底,以及用于将工艺气体引入等离子体产生区域的气体入口装置。 偶极环磁体布置在处理容器的外周周围,用于在等离子体产生区域中产生具有磁力线的磁场,从而在等离子体产生区域中产生处理气体的等离子体。 偶极环磁体具有设置在椭圆形轨道上的多个各向异性分段磁体,它们是具有相同形状和尺寸的圆柱形永磁体,并且在直径方向上被磁化。
    • 35. 发明授权
    • Magnetic field generator for magnetron plasma
    • 磁控管等离子体磁场发生器
    • US5659276A
    • 1997-08-19
    • US670096
    • 1996-06-25
    • Koji Miyata
    • Koji Miyata
    • C23C14/35H01J37/32H01J37/34C23C14/00
    • H01J37/32623H01J37/3266H01J37/3408
    • The improvement proposed relates to the dipole ring magnet in a magnetic field generator for magnetron plasma in an apparatus for plasma sputtering or plasma etching. Different from the conventional dipole ring magnet, which is an assembly of anisotropic columnar segment magnets in a circular arrangement each in an integral columnar form, each of the segment magnets according to the first aspect of the invention is divided into upper and lower halves and the gap space held between the upper and lower halves is varied from position to position so that the uniformity of the magnetic field formed inside of the dipole ring magnet is increased in the horizontal direction with consequently increased uniformity of the plasma density generated thereby. Instead of dividing each of the segment magnets into the upper and lower halves, according to the second aspect of the invention, the circular arrangement of the segment magnets is not regular and symmetrical but assymmetrical relative to the direction of the magnetic field so that similar improvements to those in the first aspect of the invention can be accomplished in the uniformity of the magnetic field and in the density of the plasma.
    • 提出的改进涉及用于等离子体溅射或等离子体蚀刻的装置中用于磁控管等离子体的磁场发生器中的偶极环磁体。 与传统的偶极环磁体不同,传统的偶极环磁体是圆柱形排列的各向异性圆柱形磁体的组件,每一个都是一体的柱形,根据本发明第一方面的每个分段磁体分为上半部分和下半部分, 保持在上半部和下半部之间的间隙空间在位置之间变化,使得在偶极环磁体内形成的磁场的均匀性在水平方向上增加,从而增加了由此产生的等离子体密度的均匀性。 根据本发明的第二方面,代替将每个分段磁体分成上半部分和下半部分,分段磁体的圆形布置不是相对于磁场方向的规则和对称但不对称的,因此类似的改进 可以在磁场的均匀性和等离子体的密度中实现本发明的第一方面。
    • 37. 发明授权
    • Magnet apparatus suitable for magnetic resonance imaging
    • 适用于磁共振成像的磁铁设备
    • US5291171A
    • 1994-03-01
    • US991225
    • 1992-12-16
    • Nobutaka KobayashiKen OhashiKoji Miyata
    • Nobutaka KobayashiKen OhashiKoji Miyata
    • A61B5/055G01R33/20G01R33/383H01F5/00H01F7/02H01F3/00
    • H01F7/0278G01R33/383
    • The invention relates to an apparatus for producing a magnetic field in a space between two oppositely arranged permanent magnet discs, which is suitable for use in magnetic resonance imaging (MRI). An object of the invention is to reduce the size and weight of the yoke connecting the two permanent magnet discs without causing magnetic saturation of the yoke in view of the fact that magnetic saturation of the yoke leads to the appearance of leakage flux and consequential lowering of the uniformity of the magnetic field. The object is accomplished by regulating the cross-sectional area of the whole magnetic path in the yoke, A.sub.y, such that the following equation holds: A.sub.y =1/a.times.A.sub.m B.sub.m /B.sub.ys, where A.sub.m is the cross-sectional area of magnetic path in each permanent magnet disc, B.sub.m is the magnetic flux density in each permanent magnet disc at normal temperature, B.sub.ys is the saturation magnetic flux density of the yoke at normal temperature, and a is a coefficient the value of which is not larger than 1 and not smaller than 0.6.
    • 本发明涉及一种用于在两个相对布置的永磁体盘之间的空间中产生磁场的装置,其适用于磁共振成像(MRI)。 发明内容本发明的目的是为了减小连接两个永久磁铁盘片的磁轭的尺寸和重量,而不会引起磁轭的磁饱和,因为磁轭的磁饱和导致漏磁通的出现,并导致降低 磁场的均匀性。 该目的是通过调节磁轭Ay中的整个磁路的横截面积来实现的,使得以下等式成立:Ay = 1 / a * AmBm / Bys,其中Am是磁路的横截面积 在每个永久磁铁盘中,Bm是常温下每个永久磁铁盘中的磁通密度,Bys是磁轭在常温下的饱和磁通密度,a是其值不大于1的系数, 不小于0.6。
    • 40. 发明授权
    • Memory device
    • 内存设备
    • US08559210B2
    • 2013-10-15
    • US13288998
    • 2011-11-04
    • Koji MiyataWataru Otsuka
    • Koji MiyataWataru Otsuka
    • G11C11/00
    • G11C7/18G11C5/063G11C13/0004G11C13/0007G11C13/0026H01L27/0207H01L27/2436H01L27/2463H01L45/085H01L45/1233H01L45/1266H01L45/146
    • A memory device includes: a transistor array having transistors; and memory elements provided, one for each of the transistors. The transistor array includes a substrate having diffusion layers on a surface thereof, parallel word lines on the substrate, parallel first bit lines provided in a direction perpendicular to the word lines, bit contact electrodes between the adjacent two word lines and connecting the first bit lines and the diffusion layers, and node contact electrodes at an opposite side to the bit contact electrodes with the two word lines in between and connected to the diffusion layers. The memory elements have lower electrodes connected to the node contact electrodes, memory layers on the lower electrodes and having resistance values reversibly changing by voltage application, and parallel second bit lines extending in the same direction as that of the first bit lines on the memory layers.
    • 存储器件包括:具有晶体管的晶体管阵列; 并提供存储元件,每个晶体管一个。 晶体管阵列包括在其表面上具有扩散层的衬底,衬底上的平行字线,在垂直于字线的方向上提供的平行的第一位线,相邻两个字线之间的位接触电极,并将第一位线 扩散层和与位接触电极相反侧的节点接触电极与两个字线之间并且连接到扩散层。 存储器元件具有连接到节点接触电极的下电极,下电极上的存储层,并且具有通过施加电压可逆地改变的电阻值,以及在与存储层上的第一位线的方向相同的方向上延伸的并行的第二位线 。