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31. 发明授权

US4639886A Arithmetic system having pipeline structure arithmetic means 失效
标题翻译：具有流水线结构算术的算术系统
公开(公告)号：US4639886A
公开(公告)日：1987-01-27
申请号：US509047
申请日：1983-06-29
申请人： Masahiro Hashimoto , Tsuyoshi Watanabe , Kenichi Wada
发明人： Masahiro Hashimoto , Tsuyoshi Watanabe , Kenichi Wada
IPC分类号： G06F7/00 , G06F7/48 , G06F7/57 , G06F9/305 , G06F9/38 , G06F7/38
CPC分类号： G06F7/48 , G06F7/483 , G06F9/3001 , G06F9/3873 , G06F2207/3884
摘要： An arithmetic system includes an arithmetic unit of a pipeline structure for executing arithmetic operations for instructions which require different arithmetic cycles. The arithmetic unit executes N arithmetics in pipeline for N instruction at maximum. Initiation of arithmetic operation for a new instruction in the arithmetic unit is indicated by an indicator which detects that each of the instruction executed in the arithmetic is N cycles before completion of the execution and allows arithmetic operation for the new instruction to be initiated in the succeeding cycle.
摘要翻译：算术系统包括用于执行需要不同算术周期的指令的算术运算的流水线结构的算术单元。运算单元最多执行N条指令的N运算符。运算单元中的新指令的算术运算的发生由检测运算结束执行的指令中的每一个都是N个周期的指示符表示，并允许在下一个操作中启动新指令的算术运算周期。

32. 发明授权

US09104112B2 Mask blank, method of manufacturing the same, and transfer mask 有权
标题翻译：掩模毛坯，其制造方法和转印掩模
公开(公告)号：US09104112B2
公开(公告)日：2015-08-11
申请号：US13823206
申请日：2011-09-29
申请人： Kazuya Sakai , Masahiro Hashimoto , Takeyuki Yamada
发明人： Kazuya Sakai , Masahiro Hashimoto , Takeyuki Yamada
IPC分类号： G03F1/50 , G03F1/38
CPC分类号： G03F1/50 , G03F1/38
摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
摘要翻译：提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。薄膜2具有含有烃的氧化膜形式的表面改性层。薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。

33. 发明授权

US09017902B2 Mask blank, transfer mask, and method of manufacturing a transfer mask 有权
标题翻译：掩模空白，转印掩模和制造转印掩模的方法
公开(公告)号：US09017902B2
公开(公告)日：2015-04-28
申请号：US13378739
申请日：2010-06-17
申请人： Osamu Nozawa , Hiroyuki Iwashita , Masahiro Hashimoto , Atsushi Kominato
发明人： Osamu Nozawa , Hiroyuki Iwashita , Masahiro Hashimoto , Atsushi Kominato
IPC分类号： G03F1/50 , G03F1/58 , G03F1/80
CPC分类号： G03F1/50 , G03F1/58 , G03F1/80
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译：提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层氧气和氮气。在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。

34. 发明授权

US08822103B2 Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权
标题翻译：掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法
公开(公告)号：US08822103B2
公开(公告)日：2014-09-02
申请号：US13288365
申请日：2011-11-03
申请人： Atsushi Kominato , Osamu Nozawa , Hiroyuki Iwashita , Masahiro Hashimoto
发明人： Atsushi Kominato , Osamu Nozawa , Hiroyuki Iwashita , Masahiro Hashimoto
IPC分类号： G03F1/50 , G03F1/58 , G03F1/74 , G03F7/20
CPC分类号： G03F1/50 , G03F1/58
摘要： A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo=26.624.
摘要翻译：用于制造适于施加有形成为转印图案的透明基板和遮光膜的ArF准分子激光曝光光的转印掩模的掩模坯料。遮光膜具有至少两层，一层主要由含有过渡金属，硅和氮的第一材料构成的下层，另一层是主要由含有过渡金属的第二材料构成的上层，硅，和氮气。在通过向目标部分供给含氟物质并将带电粒子照射到目标物上的蚀刻中，下层的第一蚀刻速率与上层的第二蚀刻速率的比率为1.0以上且5.0以下一部分。另一比例满足下列公式CN≧-0.00526CMo2-0.640CMo = 26.624。

35. 发明授权

US08697315B2 Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权
标题翻译：光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US08697315B2
公开(公告)日：2014-04-15
申请号：US13347425
申请日：2012-01-10
申请人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
发明人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/50 , G03F1/54 , G03F1/80
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译：一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。

36. 发明授权

US08658334B2 Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权
标题翻译：转印掩模，制造转印掩模的方法以及制造半导体器件的方法
公开(公告)号：US08658334B2
公开(公告)日：2014-02-25
申请号：US13501348
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/50 , B08B3/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译：提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

37. 发明授权

US08614035B2 Phase shift mask blank, phase shift mask, and method for manufacturing phase shift mask blank 有权
标题翻译：相移掩模空白，相移掩模和用于制造相移掩模空白的方法
公开(公告)号：US08614035B2
公开(公告)日：2013-12-24
申请号：US13491957
申请日：2012-06-08
申请人： Osamu Nozawa , Masahiro Hashimoto
发明人： Osamu Nozawa , Masahiro Hashimoto
IPC分类号： G03F1/32
CPC分类号： G03F1/32 , G03F1/54
摘要： A phase shift mask blank having, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nrn, a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28.
摘要翻译：一种相移掩模坯料，其在透明基板上具有包括具有等于或大于9％的透光率的光学特性的金属，硅（Si）和氮（N）作为主要成分的相移膜，以及相对于ArF准分子激光束的波长和相位差等于或大于150度且小于180度的等于或小于30％，以及形成在相移膜上的遮光膜。相移膜的厚度等于或小于80nrn，相对于ArF准分子激光束的波长的折射率（n）等于或大于2.3，消光系数（k）相等大于或等于0.28。

38. 发明授权

US08535855B2 Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask 有权
标题翻译：掩模毛坯制造方法，转印掩模制造方法，掩模毛坯和转印掩模
公开(公告)号：US08535855B2
公开(公告)日：2013-09-17
申请号：US13109132
申请日：2011-05-17
申请人： Kazuya Sakai , Masahiro Hashimoto
发明人： Kazuya Sakai , Masahiro Hashimoto
IPC分类号： G03F1/68 , B08B7/02
CPC分类号： G03F1/54 , C03C17/225 , C03C17/23 , C03C23/007 , C03C2217/281 , C03C2217/29 , G03F1/50 , G03F1/68
摘要： Provided is a method of manufacturing a mask blank having a thin film on a transparent substrate. The method includes forming the thin film made of a material containing a transition metal on the transparent substrate and applying a superheated steam treatment to the thin film.
摘要翻译：提供了在透明基板上制造具有薄膜的掩模坯料的方法。该方法包括在透明基板上形成由含有过渡金属的材料制成的薄膜，并对薄膜进行过热蒸汽处理。

39. 发明申请

US20130122407A1 REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND REFLECTIVE MASK 有权
标题翻译：反光罩，其制造方法和反光掩模
公开(公告)号：US20130122407A1
公开(公告)日：2013-05-16
申请号：US13812627
申请日：2011-07-29
申请人： Masahiro Hashimoto , Kazunori Ono , Kenta Tsukagoshi , Tooru Fukui
发明人： Masahiro Hashimoto , Kazunori Ono , Kenta Tsukagoshi , Tooru Fukui
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/78 , Y10S430/143
摘要： To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.
摘要翻译：为了解决由于反向散射引起的累积能量的降低的问题，导致当在通常使用的高对比度抗蚀剂用于制造反射掩模时引起的CD线性的降低。用于制造反射掩模的反射掩模坯料包括基板，形成在基板上并适于反射曝光光的多层反射膜，以及形成在多层反射膜上并适于吸收曝光光的吸收膜。在吸收膜上形成用于电子束写入的抗蚀剂膜，并且用于电子束写入的抗蚀剂膜的对比度值γ为30以下。

40. 发明申请

US20130105441A1 MASK BLANK AND METHOD OF MANUFACTURING AN IMPRINTING MOLD 有权
标题翻译：掩模层和制造压模的方法
公开(公告)号：US20130105441A1
公开(公告)日：2013-05-02
申请号：US13641220
申请日：2011-04-04
申请人： Osamu Nozawa , Masahiro Hashimoto
发明人： Osamu Nozawa , Masahiro Hashimoto
IPC分类号： B44C1/22
CPC分类号： G11B5/855 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0015
摘要： Provided is a mask blank which is used for manufacturing an imprinting mold and which may form a fine mold pattern with high pattern accuracy. A mask blank (10) includes a transparent substrate (1) and a thin film (2) contacted with a surface of the substrate. The thin film (2) includes a laminated film including an upper layer (4) which is composed of a material containing silicon (Si) or a material containing tantalum (Ta), and a lower layer (3) which is composed of a material containing at least one of hafnium (Hf) and zirconium (Zr) and containing substantially no oxygen.
摘要翻译：提供了用于制造压印模具的掩模坯料，并且可以形成具有高图案精度的精细模具图案。掩模坯料（10）包括透明基板（1）和与基板表面接触的薄膜（2）。薄膜（2）包括层叠膜，该层叠膜包括由含有硅（Si）的材料或含有钽（Ta）的材料构成的上层（4）和由材料构成的下层（3）含有铪（Hf）和锆（Zr）中的至少一种并且基本上不含氧。

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