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    • 31. 发明授权
    • Electro-optical device and method of manufacturing the same
    • 电光装置及其制造方法
    • US07327428B2
    • 2008-02-05
    • US10928447
    • 2004-08-30
    • Katsunori YamazakiEiji OkamotoTsuyoshi MaedaKimitaka KamijoDaisuke NaganoTakumi SekiAkira Inoue
    • Katsunori YamazakiEiji OkamotoTsuyoshi MaedaKimitaka KamijoDaisuke NaganoTakumi SekiAkira Inoue
    • G02F1/1343
    • G02F1/134363G02F1/1365
    • To simplify a manufacturing process of a transverse electric field mode liquid crystal display device by using a non-linear resistance element such as a TFD (Thin Film Diode) as a switching element. In a liquid crystal display device having a pair of substrates with liquid crystal interposed therebetween, one of the substrates consists of an electrode substrate. On the electrode substrate, there are provided a first group of electrodes, a second group of electrodes crossing the first group of electrodes with an insulating layer interposed therebetween, non-linear resistance elements, one end of each of the non-linear resistance elements being connected to the respective one of the second group of electrodes, and pixel electrodes opposing the first group of electrodes, each pixel electrode being connected to the other end of each of the non-linear resistance elements. Since the non-linear resistance elements have a so-called TFD (MIM) structure made of metal-insulating layer-metal, the manufacturing process is simple. Therefore, it is possible to manufacture the transverse electric field mode display device at low cost.
    • 为了简化通过使用诸如TFD(薄膜二极管)之类的非线性电阻元件作为开关元件的横向电场模式液晶显示装置的制造过程。 在具有插入液晶的一对基板的液晶显示装置中,一个基板由电极基板构成。 在电极基板上设置有第一组电极,与第一组电极交叉的第二组电极,绝缘层插入其间,非线性电阻元件,每个非线性电阻元件的一端为 连接到第二组电极中的相应一个,以及与第一组电极相对的像素电极,每个像素电极连接到每个非线性电阻元件的另一端。 由于非线性电阻元件具有由金属绝缘层金属制成的所谓的TFD(MIM)结构,所以制造工艺简单。 因此,可以以低成本制造横电场模式显示装置。
    • 34. 发明申请
    • Liquid cell
    • 液体电池
    • US20070145290A1
    • 2007-06-28
    • US11586401
    • 2006-10-25
    • Masatsugu ShigenoAkira Inoue
    • Masatsugu ShigenoAkira Inoue
    • G21K5/10
    • G01Q30/14
    • A liquid cell 1 for fixing a sample S in a condition in which the sample S is dipped in a solution W, including a lower mount 2 including a bottom plate 10 having a mounting surface 10a on which the sample is mounted, and a wall section 11 disposed on the bottom plate so as to surround the periphery of the mounted sample and capable of trapping the solution inside the surrounded area, an upper mount 3 including an upper plate 20 abutting on an upper surface of the wall section, and a flange section 21 formed so as to be bent from an outer edge of the upper plate at an angle of substantially 90 degrees, and abutting on an outer peripheral surface of the wall section, the upper mount being capable of fitting to the lower mount from above, and a holding member 4 that abuts on an outer edge of the sample to press the sample against the mounting surface from above when the upper mount fits, wherein, an outer peripheral surface of the wall section and an inner circumferential surface of the flange section are provided with fitting means 5 that fits the upper mount to the lower mount while screwing the upper mount, is provided.
    • 在将样品S浸渍在溶液W中的条件下固定样品S的液晶盒1,包括具有安装表面10a的底板10的下部安装件2和安装有样品的壁 第一部分11设置在底板上以围绕安装的样品的周边并且能够将溶液捕获在包围的区域内;上部支架3,其包括邻接在壁部的上表面上的上板20;以及凸缘 形成为以大致90度的角度从上板的外缘弯曲并且与壁部的外周面抵接的上部安装件能够从上方嵌入下部安装部的部分21, 以及保持构件4,该保持构件4抵接在样品的外边缘上,当上部安装件配合时将样品从上方按压在安装面上,其中,壁部的外周面和 凸缘部分设置有装配装置5,其在拧上上部支架的同时将上部支架安装到下部支架上。
    • 35. 发明授权
    • Semiconductor device having SiGe channel region
    • 具有SiGe沟道区的半导体器件
    • US07205586B2
    • 2007-04-17
    • US10851073
    • 2004-05-24
    • Takeshi TakagiAkira Inoue
    • Takeshi TakagiAkira Inoue
    • H01L31/072
    • H01L29/1054H01L21/84H01L27/1203H01L29/161H01L29/165H01L29/7782H01L29/783H01L29/78615H01L29/78648H01L29/78687
    • A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.
    • HDTMOS包括Si衬底,掩埋氧化物膜和半导体层。 半导体层包括上硅膜,外延生长的Si缓冲层,外延生长的SiGe膜和外延生长的Si膜。 此外,HDTMOS包括n型高浓度Si体区域,n + Si区域,含有n型低浓度杂质的SiGe沟道区域,n型低浓度Si覆盖层, 以及作为用于电连接栅电极和Si体区的导体构件的接触。 本发明通过在沟道层使用载流子行进的带边缘处的电位较小的材料,而不是构成体区的材料的情况下,使阈值电压保持较小。
    • 37. 发明申请
    • Semiconductor material having bipolar transistor structure and semiconductor device using same
    • 具有双极晶体管结构的半导体材料和使用其的半导体器件
    • US20060180833A1
    • 2006-08-17
    • US10539006
    • 2003-12-16
    • Akira InoueMasahiko HataYasuyuki Kurita
    • Akira InoueMasahiko HataYasuyuki Kurita
    • H01L31/109
    • H01L29/7371H01L29/0821
    • In an epitaxial substrate (20) comprising a collector layer (22), a base layer (23) and an emitter layer (24) formed on a semi-insulating GaAs substrate (21), a hole barrier layer (22C) is provided in the collector layer (22) to prevent influx of holes from the base layer (23), whereby the flow of collector current is suppressed when the collector current density rises and electron velocity is saturated, suppressing thermal runaway of the collector current without a ballast resistance or the like. Also, thermal runaway of the collector current is suppressed by providing an additional layer (2C) for generating, in the conduction band, an electron barrier by means of electrons accumulated in the collector layer (2) when the collector current density rises.
    • 在包括集电极层(22),形成在半绝缘GaAs衬底(21)上的基极层(23)和发射极层(24))的外延衬底(20)中,提供了空穴阻挡层(22C) 在集电体层(22)中,为了防止从基底层(23)流入空穴,由此当集电极电流密度上升,电子速度饱和时,集电极电流的流动受到抑制,抑制了没有镇流器的集电极电流的热失控 电阻等。 此外,通过设置用于在集电极电流密度上升时通过积聚在集电极层(2)中的电子在导带中产生电子势垒的附加层(2C)来抑制集电极电流的热失控。
    • 40. 发明授权
    • Method for driving electrooptical device, driving circuit, and electrooptical device, and electronic apparatus
    • 驱动电光装置,驱动电路,电光装置及电子装置的方法
    • US06873319B2
    • 2005-03-29
    • US09937966
    • 2001-01-26
    • Akira InoueAkihiko ItoRyo IshiiSuguru Yamazaki
    • Akira InoueAkihiko ItoRyo IshiiSuguru Yamazaki
    • G09G3/20G09G3/36G09G5/00
    • G09G3/3648G09G3/2025G09G3/3696G09G2300/0814G09G2300/0823
    • The invention provides an electro-optical device capable of a high-quality and high-definition tone display, a driving method thereof, a driving circuit thereof, and electronic equipment using the same. With the invention, one field is divided into a plurality of sub-fields, such that each pixel is turned on or off in each of the sub-fields so that the proportion of the period during which each pixel is turned on to the period during which the associated pixel is turned off within the one field corresponds to the proportion according to the tone data. Further, when each pixel is turned on, either a first voltage which is higher than a constant reference voltage applied to a counter electrode or a second voltage which is lower than the reference voltage is applied to a pixel electrode of the associated pixel, and when the pixel is turned off, a voltage equal to the reference voltage is applied to the pixel electrode of the pixel.
    • 本发明提供一种能够进行高品质和高清晰度色调显示的电光装置,其驱动方法,驱动电路和使用该电光装置的电子设备。 利用本发明,一个场被分成多个子场,使得每个子场中的每个像素被打开或关闭,使得每个像素被打开的周期的比例到 关联像素在一个场内关闭的对应于根据色调数据的比例。 此外,当每个像素导通时,高于施加到对电极的恒定参考电压的第一电压或低于参考电压的第二电压被施加到相关像素的像素电极,并且当 关闭像素,将等于参考电压的电压施加到像素的像素电极。