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31. 发明申请

US20050212079A1 Nanowire varactor diode and methods of making same 有权
标题翻译：纳米线变容二极管及其制作方法
公开(公告)号：US20050212079A1
公开(公告)日：2005-09-29
申请号：US10806361
申请日：2004-03-23
申请人： David Stumbo , Jian Chen , David Heald , Yaoling Pan
发明人： David Stumbo , Jian Chen , David Heald , Yaoling Pan
IPC分类号： H01L29/06 , H01L29/93
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/93 , Y10S977/762
摘要： A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
摘要翻译：公开了一种纳米线变容二极管及其制造方法。该结构包括运行半导体纳米线长度的同轴电容器。在一个实施例中，第一导电类型的半导体纳米线沉积在衬底上。在纳米线表面的至少一部分上形成绝缘体。纳米线的区域掺杂有第二导电类型的材料。在绝缘体和掺杂区域的至少一部分上形成第一电接触。在纳米线的非掺杂药液上形成第二电接触。在操作期间，纳米线表面的导电类型反转，并且在向第一和第二电触点施加电压时形成耗尽区。因此，变容二极管作为施加电压的函数呈现可变电容。

32. 发明授权

US08435838B2 Optimization of desiccant usage in a MEMS package 失效
标题翻译： MEMS封装中干燥剂使用的优化
公开(公告)号：US08435838B2
公开(公告)日：2013-05-07
申请号：US12680503
申请日：2007-09-28
申请人： Yen Hua Lin , Rihui He , Lingling Wu , Lauren Palmateer , David Heald
发明人： Yen Hua Lin , Rihui He , Lingling Wu , Lauren Palmateer , David Heald
IPC分类号： H01L21/00
CPC分类号： B81C1/00285 , B81C1/00674
摘要： A MEMS device may be package with a desiccant to provide a moisture-free environment. In order to avoid undesirable effects on the MEMS device, the desiccant may be selected or treated so as to be compatible with a particular MEMS device. This treatment may include baking of the desiccant to as to cause outgassing of moisture or other undesirable material. The structure of the MEMS device may also be altered to improve compatibility with particular desiccants.
摘要翻译： MEMS器件可以用干燥剂包装以提供无湿度的环境。为了避免对MEMS器件的不期望的影响，可以选择或处理干燥剂以便与特定的MEMS器件兼容。这种处理可以包括烘烤干燥剂，以引起除湿或其它不期望的物质。还可以改变MEMS器件的结构，以改善与特定干燥剂的相容性。

33. 发明申请

US20120194496A1 APPARATUS AND METHOD FOR SUPPORTING A MECHANICAL LAYER 审中-公开
标题翻译：用于支持机械层的装置和方法
公开(公告)号：US20120194496A1
公开(公告)日：2012-08-02
申请号：US13019159
申请日：2011-02-01
申请人： Fan Zhong , David Heald , Wenyu Sun , Chuan Pu , Chandra Tupelly
发明人： Fan Zhong , David Heald , Wenyu Sun , Chuan Pu , Chandra Tupelly
IPC分类号： G06F3/038 , G02B26/00 , H02N11/00 , B05D5/12 , C03C15/00
CPC分类号： G02B26/001
摘要： This disclosure provides systems, methods and apparatuses for supporting a mechanical layer. In one aspect, an electromechanical systems device includes a substrate, a mechanical layer, and a post positioned on the substrate for supporting the mechanical layer. The mechanical layer is spaced from the substrate and defines one side of a gap between the mechanical layer and the substrate, and the mechanical layer is movable in the gap between an actuated position and a relaxed position. The post includes a wing portion in contact with a portion of the mechanical layer, the wing portion positioned between the gap and the mechanical layer. The wing portion can include a plurality of layers configured to control the curvature of the mechanical layer.
摘要翻译：本公开提供了用于支撑机械层的系统，方法和装置。在一个方面，机电系统装置包括基板，机械层和位于基板上用于支撑机械层的柱。机械层与衬底间隔开并且限定机械层和衬底之间的间隙的一侧，并且机械层可以在致动位置和松弛位置之间的间隙中移动。该柱包括与机械层的一部分接触的翼部，翼部位于间隙和机械层之间。机翼部分可以包括被配置为控制机械层的曲率的多个层。

34. 发明授权

US07321457B2 Process and structure for fabrication of MEMS device having isolated edge posts 失效
标题翻译：具有隔离边缘柱的MEMS器件的制造工艺和结构
公开(公告)号：US07321457B2
公开(公告)日：2008-01-22
申请号：US11445607
申请日：2006-06-01
申请人： David Heald
发明人： David Heald
IPC分类号： G02B26/00 , G02B26/08
CPC分类号： G02B26/001
摘要： A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves may be used as a hard mask during the etching of these support structures. A resultant array of MEMS devices includes support structures having a face located at the edge of an overlying electrode and coincident with the edge of the overlying electrode.
摘要翻译：制造MEMS器件阵列的方法包括形成位于上条带电极边缘处的支撑结构。蚀刻支撑结构以形成位于一对相邻电极的边缘处的一对单独的支撑结构。在蚀刻这些支撑结构期间，电极本身可用作硬掩模。所得到的MEMS器件阵列包括支撑结构，其具有位于上覆电极的边缘处并与上覆电极的边缘重合的面。

35. 发明申请

US20060040103A1 Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same 有权
公开(公告)号：US20060040103A1
公开(公告)日：2006-02-23
申请号：US11147670
申请日：2005-06-07
申请人： Jeffery Whiteford , Rhett Brewer , Mihai Buretea , Jian Chen , Karen Cruden , Xiangfeng Duan , William Freeman , David Heald , Francisco Leon , Chao Liu , Andreas Meisel , Kyu Min , J. Parce , Erik Scher
发明人： Jeffery Whiteford , Rhett Brewer , Mihai Buretea , Jian Chen , Karen Cruden , Xiangfeng Duan , William Freeman , David Heald , Francisco Leon , Chao Liu , Andreas Meisel , Kyu Min , J. Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： C09C1/3081 , B82Y30/00 , C01P2004/16 , C01P2004/45 , C01P2004/54 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C01P2006/60 , C09C3/006 , C09C3/063 , C09C3/12 , H01G4/14 , Y10S977/773 , Y10T428/2982 , Y10T428/2989 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.

36. 发明申请

US20050287717A1 Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权
标题翻译：用于形成纳米结构单层的方法和装置以及包括这种单层的装置
公开(公告)号：US20050287717A1
公开(公告)日：2005-12-29
申请号：US11148001
申请日：2005-06-07
申请人： David Heald , Karen Cruden , Xiangfeng Duan , Chao Liu , J. Parce
发明人： David Heald , Karen Cruden , Xiangfeng Duan , Chao Liu , J. Parce
IPC分类号： G03F7/075 , G11C13/00 , H01L21/28 , H01L21/312 , H01L21/469 , H01L21/82 , H01L27/10 , H01L29/739
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译：提供了形成或构图纳米结构阵列的方法。所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

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